AM29SL400CB-120WBC_技术文档

ADVANCE INFORMATION

Am29SL400C

4 Megabit (512 K x 8-Bit/256 K x 16-Bit)CMOS 1.8 Volt-only

Super Low Voltage Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Embedded Algorithms

— 1.65 to 2.2 V for read, program, and erase

operations

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Ideal for battery-powered applications

■ Manufactured on 0.32 µm process technology

■ High performance

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Minimum 1,000,000 erase cycle guarantee per

— Access times as fast as 100 ns

sector

■ Ultra low power consumption (typical values at

■ 20-year data retention at 125°C

■ Package option

5 MHz)

— 1 µA Automatic Sleep Mode current

— 1 µA standby mode current

— 5 mA read current

— 48-ball FBGA

— 48-pin TSOP

— 20 mA program/erase current

■ Compatibility with JEDEC standards

■ Flexible sector architecture

— Pinout and software compatible with

single-power supply Flash

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

seven 64 Kbyte sectors (byte mode)

— Superior inadvertent write protection

— One 8 Kword, two 4 Kword, one 16 Kword, and

seven 32 Kword sectors (word mode)

■ Data# Polling and toggle bits

— Provides a software method of detecting

program or erase operation completion

— Supports full chip erase

— Sector Protection features:

■ Ready/Busy# pin (RY/BY#)

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

— Provides a hardware method of detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

Sectors can be locked in-system or via

programming equipment

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Hardware reset pin (RESET#)

■ Unlock Bypass Program Command

— Hardware method to reset the device to reading

array data

— Reduces overall programming time when

issuing multiple program command sequences

■ Top or bottom boot block configurations

available

Publication# 26722 Rev: A Amendment+2

Issue Date: February 5, 2003

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Refer to AMD’s Website (www.amd.com) for the latest information.

A D V A N C E I N F O R M A T I O N

GENERAL DESCRIPTION

The Am29SL400C is an 4Mbit, 1.8 V volt-only Flash

memory organized as 524,288 bytes or 262,144 words.

The device is offered in 48-pin TSOP and 48-ball

FBGA packages. The word-wide data (x16) appears on

DQ15–DQ0; the byte-wide (x8) data appears on

DQ7–DQ0. This device is designed to be programmed

and erased in-system with a single 1.8 volt V_CCsupply.

No V_PPis for write or erase operations. The device can

also be programmed in standard EPROM program-

mers.

During erase, the device automatically times the erase

pulse widths and verifies proper cell margin.

The host system can detect whether a program or

erase operation is complete by observing the RY/BY#

pin, or by reading the DQ7 (Data# Polling) and DQ6

(toggle) status bits. After a program or erase cycle

has been completed, the device is ready to read array

data or accept another command.

The sector erase architecture allows memory sectors

to be erased and reprogrammed without affecting the

data contents of other sectors. The device is fully

erased when shipped from the factory.

The standard device offers access times of 100, 120,

and 150 ns, allowing high speed microprocessors to

operate without wait states. To eliminate bus conten-

tion the device has separate chip enable (CE#), write

enable (WE#) and output enable (OE#) controls.

Hardware data protection measures include a low

V_CCdetector that automatically inhibits write opera-

tions during power transitions. The hardware sector

protection feature disables both program and erase

operations in any combination of the sectors of

memory. This can be achieved in-system or via pro-

gramming equipment.

The device requires only a single 1.8 volt power

supply for both read and write functions. Internally

generated and regulated voltages are provided for the

program and erase operations.

The device is entirely command set compatible with the

JEDEC single-power-supply Flash standard. Com-

mands are written to the command register using stan-

dard microprocessor write timings. Register contents

serve as input to an internal state-machine that con-

trols the erase and programming circuitry. Write cycles

also internally latch addresses and data needed for the

programming and erase operations. Reading data out

of the device is similar to reading from other Flash or

EPROM devices.

The Erase Suspend feature enables the user to put

erase on hold for any period of time to read data from,

or program data to, any sector that is not selected for

erasure. True background erase can thus be achieved.

The hardware RESET# pin terminates any operation

in progress and resets the internal state machine to

reading array data. The RESET# pin may be tied to the

system reset circuitry. A system reset would thus also

reset the device, enabling the system microprocessor

to read the boot-up firmware from the Flash memory.

Device programming occurs by executing the program

command sequence. This initiates the Embedded

Program algorithm—an internal algorithm that auto-

matically times the program pulse widths and verifies

proper cell margin. The Unlock Bypass mode facili-

tates faster programming times by requiring only two

write cycles to program data instead of four.

The device offers two power-saving features. When

addresses have been stable for a specified amount of

time, the device enters the automatic sleep mode.

The system can also place the device into the standby

mode. Power consumption is greatly reduced in both

these modes.

Device erasure occurs by executing the erase

command sequence. This initiates the Embedded

Erase algorithm—an internal algorithm that automati-

cally preprograms the array (if it is not already pro-

grammed) before executing the erase operation.

AMD’s Flash technology combines years of Flash

memory manufacturing experience to produce the

highest levels of quality, reliability and cost effective-

ness. The device electrically erases all bits within a

sector simultaneously via Fowler-Nordheim tunneling.

The data is programmed using hot electron injection.

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Am29SL400C

February 5, 2003

A D V A N C E I N F O R M A T I O N

TABLE OF CONTENTS

Figure 5. Toggle Bit Algorithm........................................................ 22

DQ5: Exceeded Timing Limits ................................................22

DQ3: Sector Erase Timer .......................................................22

Table 6. Write Operation Status ..................................................... 23

Absolute Maximum Ratings . . . . . . . . . . . . . . . . 24

Figure 6. Maximum Negative Overshoot Waveform ...................... 24

Figure 7. Maximum Positive Overshoot Waveform........................ 24

Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 24

DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 25

Figure 8. I_CC1Current vs. Time (Showing Active and Automatic

Product Selector Guide . . . . . . . . . . . . . . . . . . . . .4

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Special Handling Instructions for FBGA Packages ..................6

Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . .7

Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Ordering Information . . . . . . . . . . . . . . . . . . . . . . .8

Device Bus Operations . . . . . . . . . . . . . . . . . . . . . .9

Table 1. Am29SL400C Device Bus Operations ................................9

Word/Byte Configuration ..........................................................9

Requirements for Reading Array Data .....................................9

Writing Commands/Command Sequences ............................10

Program and Erase Operation Status ....................................10

Standby Mode ........................................................................10

Automatic Sleep Mode ...........................................................10

RESET#: Hardware Reset Pin ...............................................10

Output Disable Mode ..............................................................11

Table 2. Am29SL400CT Top Boot Block Sector Address Table .....11

Table 3. Am29SL400CB Bottom Boot Block Sector Address Table 12

Autoselect Mode .....................................................................12

Table 4. Am29SL400C Autoselect Codes (High Voltage Method) ..13

Sector Protection/Unprotection ...............................................13

Temporary Sector Unprotect ..................................................13

Figure 1. In-System Sector Protect/Unprotect Algorithms .............. 14

Figure 1. Temporary Sector Unprotect Operation........................... 15

Hardware Data Protection ......................................................15

Low V_CCWrite Inhibit ..............................................................15

Write Pulse “Glitch” Protection ...............................................15

Logical Inhibit ..........................................................................15

Power-Up Write Inhibit ............................................................15

Command Definitions . . . . . . . . . . . . . . . . . . . . . 15

Reading Array Data ................................................................15

Reset Command .....................................................................15

Autoselect Command Sequence ............................................16

Word/Byte Program Command Sequence .............................16

Unlock Bypass Command Sequence .....................................16

Figure 2. Program Operation .......................................................... 17

Chip Erase Command Sequence ...........................................17

Sector Erase Command Sequence ........................................17

Figure 3. Erase Operation............................................................... 18

Table 5. Am29SL400C Command Definitions ................................19

Write Operation Status ...........................................................20

DQ7: Data# Polling .................................................................20

Figure 4. Data# Polling Algorithm ................................................... 20

RY/BY#: Ready/Busy# ...........................................................20

DQ6: Toggle Bit I ....................................................................21

DQ2: Toggle Bit II ...................................................................21

Reading Toggle Bits DQ6/DQ2 ..............................................21

Sleep Currents).............................................................................. 26

Figure 9. Typical I_CC1vs. Frequency ............................................. 26

Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Figure 10. Test Setup..................................................................... 27

Table 7. Test Specifications ........................................................... 27

Key to Switching Waveforms ..................................................27

Figure 11. Input Waveforms and Measurement Levels ................. 27

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 28

Read Operations ....................................................................28

Figure 12. Read Operations Timings ............................................. 28

Figure 13. RESET# Timings .......................................................... 29

Word/Byte Configuration (BYTE#) ........................................30

Figure 14. BYTE# Timings for Read Operations............................ 30

Figure 15. BYTE# Timings for Write Operations............................ 30

Erase/Program Operations .....................................................31

Figure 16. Program Operation Timings.......................................... 32

Figure 17. Chip/Sector Erase Operation Timings .......................... 33

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . 34

Figure 18. Data# Polling Timings (During Embedded Algorithms). 34

Figure 19. Toggle Bit Timings (During Embedded Algorithms)...... 34

Figure 20. DQ2 vs. DQ6................................................................. 35

Temporary Sector Unprotect ..................................................35

Figure 21. Temporary Sector Unprotect Timing Diagram.............. 35

Figure 22. Sector Protect/Unprotect Timing Diagram .................... 36

Alternate CE# Controlled Erase/Program Operations ............37

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 38

Figure 23. Alternate CE# Controlled Write Operation Timings ...... 38

Erase and Programming Performance . . . . . . . 39

Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 39

TSOP Pin and BGA Package Capacitance . . . . . 39

Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 40

TSR048—48-Pin Reverse TSOP ...........................................40

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 41

FBA048—48-Ball Fine-Pitch Ball Grid Array (FBGA) 6 x 8 mm

Package ..................................................................................41

Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 42

February 5, 2003

Am29SL400C

3

A D V A N C E I N F O R M A T I O N

PRODUCT SELECTOR GUIDE

Family Part Number

Am29SL400C

Regulated Voltage Range V_CC= 1.7–2.2 V

Standard Voltage Range V_CC= 1.65–2.2 V

-100R

Speed Options

-110

-120

120

50

-150

150

65

Max access time, ns (t_ACC

Max CE# access time, ns (t_CE

Max OE# access time, ns (t_OE

)

100

35

110

45

)

Note: See “AC Characteristics” for full specifications.

BLOCK DIAGRAM

DQ0–DQ15 (A-1)

RY/BY#

V_CC

Sector Switches

V_SS

Erase Voltage

Generator

Input/Output

Buffers

RESET#

State

Control

WE#

BYTE#

Command

Register

PGM Voltage

Generator

Data

Latch

Chip Enable

Output Enable

Logic

STB

CE#

OE#

Y-Decoder

Y-Gating

STB

V_CCDetector

Timer

Cell Matrix

X-Decoder

A0–A17

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Am29SL400C

February 5, 2003

A D V A N C E I N F O R M A T I O N

CONNECTION DIAGRAMS

A15

A14

A13

A12

A11

A10

A9

A8

NC

1

2

3

4

5

6

7

8

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

A16

BYTE#

V_SS

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

DQ12

DQ4

V_CC

WE#

RESET#

NC

RY/BY#

NC

Standard TSOP

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

V_SS

CE#

A0

A17

A7

A6

A5

A4

A3

A2

A1

February 5, 2003

Am29SL400C

5

A D V A N C E I N F O R M A T I O N

CONNECTION DIAGRAM

48-Ball FBGA

(Top View, Balls Facing Down)

A6

B6

C6

D6

E6

F6

G6

H6

A13

A12

A14

A15

A16

BYTE# DQ15/A-1 V_SS

A5

A9

B5

A8

C5

D5

E5

F5

G5

H5

A10

A11

DQ7

DQ14

DQ13

DQ6

A4

B4

C4

D4

E4

F4

G4

H4

WE# RESET#

NC

DQ5

DQ12

V_CC

DQ4

A3

B3

C3

D3

E3

F3

G3

H3

RY/BY#

NC

DQ2

DQ10

DQ11

DQ3

A2

A7

B2

C2

A6

D2

A5

E2

F2

G2

H2

A17

DQ0

DQ8

DQ9

DQ1

A1

A3

B1

A4

C1

A2

D1

A1

E1

A0

F1

G1

H1

CE#

OE#

V_SS

SSOP). The package and/or data integrity may be

compromised if the package body is exposed to tem-

peratures about 150°C for prolonged perionds of time.

Special Handling Instructions for FBGA

Packages

Special handling is required for Flash Memory products

in molded packages (TSOP, BGA, PLCC, PDIP,

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Am29SL400C

February 5, 2003

A D V A N C E I N F O R M A T I O N

PIN CONFIGURATION

LOGIC SYMBOL

A0–A17

=

18 addresses

18

DQ0–DQ14 = 15 data inputs/outputs

A0–A17

16 or 8

DQ15/A-1

=

DQ15 (data input/output, word mode),

A-1 (LSB address input, byte mode)

DQ0–DQ15

(A-1)

BYTE#

CE#

=

Selects 8-bit or 16-bit mode

Chip enable

CE#

OE#

Output enable

WE#

Write enable

RESET#

BYTE#

RESET#

RY/BY#

V_CC

Hardware reset pin, active low

Ready/Busy# output

1.75–2.2 V single power supply

Device ground

RY/BY#

V_SS

NC

Pin not connected internally

February 5, 2003

Am29SL400C

7

A D V A N C E I N F O R M A T I O N

ORDERING INFORMATION

Standard Products

AMD standard products are available in several packages and operating ranges. The order number (Valid Combi-

nation) is formed by a combination of the elements below.

Am29SL400C

T

-100

E

C

TEMPERATURE RANGE

C

I

=

Commercial (0°C to +70°C)

Industrial (–40°C to +85°C)

PACKAGE TYPE

WB = 48-Ball Fine-Pitch Ball Grid Array (FBGA)

0.80 mm pitch, 6 x 8 mm package (FBA048)

E

=

48-Pin Thin Small Outline Package (TSOP)

Standard Pinout (TS048)

SPEED OPTION

See Product Selector Guide and Valid Combinations

BOOT CODE SECTOR ARCHITECTURE

T

B

=

Top Sector

Bottom Sector

DEVICE NUMBER/DESCRIPTION

Am29SL400C

4Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS Flash Memory

1.8 Volt-only Read, Program, and Erase

Valid Combinations for TSOP Packages

Order Number

Valid Combinations for FBGA Packages

Order Number

Package Marking

AM29SL400CT-100R,

AM29SL400CB-100R

AM29SL400CT-100R,

AM29SL400CB-100R

A400CT10R,

A400CB10R

AM29SL400CT-110,

AM29SL400CB-110

AM29SL400CT-110,

AM29SL400CB-110

A400CT11V,

A400CB11V

EI, EC

WBC,

WBI

C, I

AM29SL400CT-120,

AM29SL400CB-120

AM29SL400CT-120,

AM29SL400CB-120

A400CT12V,

A400CB12V

AM29SL400CT-150,

AM29SL400CB-150

AM29SL400CT-150,

AM29SL400CB-150

A400CT15V,

A400CB15V

Valid Combinations

Valid Combinations list configurations planned to be

supported in volume for this device. Consult the local

AMD sales office to confirm availability of specific valid

combinations and to check on newly released combi-

nations.

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Am29SL400C

February 5, 2003

A D V A N C E I N F O R M A T I O N

DEVICE BUS OPERATIONS

This section describes the requirements and use of the

device bus operations, which are initiated through the

internal command register. The command register itself

does not occupy any addressable memory location.

The register is composed of latches that store the com-

mands, along with the address and data information

needed to execute the command. The contents of the

register serve as inputs to the internal state machine.

The state machine outputs dictate the function of the

device. Table 1 lists the device bus operations, the

inputs and control levels they require, and the resulting

output. The following subsections describe each of

these operations in further detail.

Table 1. Am29SL400C Device Bus Operations

DQ8–DQ15

BYTE#

Addresses

(Note 1)

DQ0– BYTE#

Operation

CE# OE# WE# RESET#

DQ7

D_OUT

D_IN

= V_IH

D_OUT

D_IN

= V_IL

Read

Write

L

H

L

H

A_IN

DQ8–DQ14 = High-Z,

DQ15 = A-1

H

V_CC

0.2 V

±

V_CC±

0.2 V

Standby

X

High-Z High-Z

High-Z

Output Disable

Reset

L

H

X

H

X

H

L

X

High-Z High-Z

High-Z

X

Sector Address,

A6 = L, A1 = H,

A0 = L

Sector Protect (Note 2)

L

H

L

V_ID

D_IN

X

Sector Address,

A6 = H, A1 = H,

A0 = L

Sector Unprotect (Note 2)

L

H

X

L

V_ID

D_IN

X

Temporary Sector Unprotect

X

A_IN

D_IN

High-Z

Legend:

L = Logic Low = V_IL, H = Logic High = V_IH, V_ID= 10 ± 1.0 V, X = Don’t Care, A_IN= Address In, D_IN= Data In, D_OUT= Data Out

Notes:

1. Addresses are A17:A0 in word mode (BYTE# = V_IH), A17:A-1 in byte mode (BYTE# = V_IL).

2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector

Protection/Unprotection” section.

Word/Byte Configuration

Requirements for Reading Array Data

The BYTE# pin controls whether the device data I/O

pins DQ15–DQ0 operate in the byte or word configura-

tion. If the BYTE# pin is set at logic ‘1’, the device is in

word configuration, DQ15–DQ0 are active and con-

trolled by CE# and OE#.

To read array data from the outputs, the system must

drive the CE# and OE# pins to V_IL. CE# is the power

control and selects the device. OE# is the output

control and gates array data to the output pins. WE#

should remain at V_IH. The BYTE# pin determines

whether the device outputs array data in words or

bytes.

If the BYTE# pin is set at logic ‘0’, the device is in byte

configuration, and only data I/O pins DQ0–DQ7 are

active and controlled by CE# and OE#. The data I/O

pins DQ8–DQ14 are tri-stated, and the DQ15 pin is

used as an input for the LSB (A-1) address function.

The internal state machine is set for reading array data

upon device power-up, or after a hardware reset. This

ensures that no spurious alteration of the memory

content occurs during the power transition. No

command is necessary in this mode to obtain array

February 5, 2003

Am29SL400C

9

A D V A N C E I N F O R M A T I O N

data. Standard microprocessor read cycles that assert Status” for more information, and to “AC Characteris-

valid addresses on the device address inputs produce

valid data on the device data outputs. The device

remains enabled for read access until the command

register contents are altered.

tics” for timing diagrams.

Standby Mode

When the system is not reading or writing to the device,

it can place the device in the standby mode. In this

mode, current consumption is greatly reduced, and the

outputs are placed in the high impedance state, inde-

pendent of the OE# input.

See “Reading Array Data” for more information. Refer

to the AC Read Operations table for timing specifica-

tions and to Figure 13 for the timing diagram. I_CC1in

the DC Characteristics table represents the active

current specification for reading array data.

The device enters the CMOS standby mode when the

CE# and RESET# pins are both held at V_CC± 0.2 V.

(Note that this is a more restricted voltage range than

V_IH.) If CE# and RESET# are held at V_IH, but not within

Writing Commands/Command Sequences

To write a command or command sequence (which

includes programming data to the device and erasing

sectors of memory), the system must drive WE# and

CE# to V_IL, and OE# to V_IH.

V

_CC± 0.2 V, the device will be in the standby mode, but

the standby current will be greater. The device requires

standard access time (t_CE) for read access when the

device is in either of these standby modes, before it is

ready to read data.

For program operations, the BYTE# pin determines

whether the device accepts program data in bytes or

words. Refer to “Word/Byte Configuration” for more

information.

The device also enters the standby mode when the

RESET# pin is driven low. Refer to the next section,

RESET#: Hardware Reset Pin.

The device features an Unlock Bypass mode to facil-

itate faster programming. Once the device enters the

Unlock Bypass mode, only two write cycles are

required to program a word or byte, instead of four. The

“Word/Byte Program Command Sequence” section

has details on programming data to the device using

both standard and Unlock Bypass command

sequences.

If the device is deselected during erasure or program-

ming, the device draws active current until the

operation is completed.

I_CC3in the DC Characteristics table represents the

standby current specification.

Automatic Sleep Mode

An erase operation can erase one sector, multiple sec-

tors, or the entire device. Tables 2 and 3 indicate the

address space that each sector occupies. A “sector

address” consists of the address bits required to

uniquely select a sector. The “Command Definitions”

section has details on erasing a sector or the entire

chip, or suspending/resuming the erase operation.

The automatic sleep mode minimizes Flash device

energy consumption. The device automatically

enables this mode when addresses remain stable for

t_ACC+ 50 ns. The automatic sleep mode is indepen-

dent of the CE#, WE#, and OE# control signals. Stan-

dard address access timings provide new data when

addresses are changed. While in sleep mode, output

data is latched and always available to the system. I_CC4

in the DC Characteristics table represents the auto-

matic sleep mode current specification.

After the system writes the autoselect command

sequence, the device enters the autoselect mode. The

system can then read autoselect codes from the

internal register (which is separate from the memory

array) on DQ7–DQ0. Standard read cycle timings

apply in this mode. Refer to the Autoselect Mode and

Autoselect Command Sequence sections for more

information.

RESET#: Hardware Reset Pin

The RESET# pin provides a hardware method of reset-

ting the device to reading array data. When the

RESET# pin is driven low for at least a period of t_RP, the

device immediately terminates any operation in

progress, tristates all output pins, and ignores all

read/write commands for the duration of the RESET#

pulse. The device also resets the internal state

machine to reading array data. The operation that was

interrupted should be reinitiated once the device is

ready to accept another command sequence, to

ensure data integrity.

I_CC2in the DC Characteristics table represents the

active current specification for the write mode. The “AC

Characteristics” section contains timing specification

tables and timing diagrams for write operations.

Program and Erase Operation Status

During an erase or program operation, the system may

check the status of the operation by reading the status

bits on DQ7–DQ0. Standard read cycle timings and I_CC

read specifications apply. Refer to “Write Operation

Current is reduced for the duration of the RESET#

pulse. When RESET# is held at V_SS±0.2 V, the device

draws CMOS standby current (I_CC4). If RESET# is held

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Am29SL400C

February 5, 2003

A D V A N C E I N F O R M A T I O N

at V_ILbut not within V_SS±0.2 V, the standby current will

be greater.

when a program or erase operation is not executing

(RY/BY# pin is “1”), the reset operation is completed

within a time of t_READY(not during Embedded Algo-

rithms). The system can read data t_RHafter the

RESET# pin returns to V_IH.

The RESET# pin may be tied to the system reset cir-

cuitry. A system reset would thus also reset the Flash

memory, enabling the system to read the boot-up firm-

ware from the Flash memory.

Refer to the AC Characteristics tables for RESET#

parameters and to Figure 14 for the timing diagram.

If RESET# is asserted during a program or erase oper-

ation, the RY/BY# pin remains a “0” (busy) until the

internal reset operation is complete, which requires a

time of t_READY(during Embedded Algorithms). The

system can thus monitor RY/BY# to determine whether

the reset operation is complete. If RESET# is asserted

Output Disable Mode

When the OE# input is at V_IH, output from the device is

disabled. The output pins are placed in the high imped-

ance state.

Table 2. Am29SL400CT Top Boot Block Sector Address Table

Address Range (in hexadecimal)

Sector Size

(Kbytes/

(x8)

(x16)

Sector

SA0

SA1

SA2

SA3

SA4

SA5

SA6

SA7

SA8

SA9

SA10

A17

0

A16

0

A15

0

A14

X

0

A13

X

A12

X

Kwords)

Address Range

64/32

32/16

8/4

00000h–0FFFFh

10000h–1FFFFh

20000h–2FFFFh

30000h–3FFFFh

40000h–4FFFFh

50000h–5FFFFh

60000h–6FFFFh

70000h–77FFFh

78000h–79FFFh

7A000h–7BFFFh

7C000h–7FFFFh

00000h–07FFFh

08000h–0FFFFh

10000h–17FFFh

18000h–1FFFFh

20000h–27FFFh

28000h–2FFFFh

30000h–37FFFh

38000h–3BFFFh

3C000h–3CFFFh

3D000h–3DFFFh

3E000h–3FFFFh

0

1

X

0

1

0

X

0

1

X

1

0

X

1

0

1

X

1

0

X

1

X

1

0

1

0

1

8/4

1

X

16/8

February 5, 2003

Am29SL400C

11

A D V A N C E I N F O R M A T I O N

Table 3. Am29SL400CB Bottom Boot Block Sector Address Table

Address Range (in hexadecimal)

Sector Size

(Kbytes/

(x8)

(x16)

Sector

SA0

SA1

SA2

SA3

SA4

SA5

SA6

SA7

SA8

SA9

SA10

A17

0

A16

0

A15

0

A14

0

A13

0

A12

X

Kwords)

Address Range

16/8

8/4

00000h–03FFFh

04000h–05FFFh

06000h–07FFFh

08000h–0FFFFh

10000h–1FFFFh

20000h–2FFFFh

30000h–3FFFFh

40000h–4FFFFh

50000h–5FFFFh

60000h–6FFFFh

70000h–7FFFFh

00000h–01FFFh

02000h–02FFFh

03000h–03FFFh

04000h–07FFFh

08000h–0FFFFh

10000h–17FFFh

18000h–1FFFFh

20000h–27FFFh

28000h–2FFFFh

30000h–37FFFh

38000h–3FFFFh

0

1

0

1

8/4

0

1

X

32/16

64/32

0

1

X

0

1

0

X

0

1

X

1

0

X

1

0

1

X

1

0

X

1

X

Note for Tables 2 and 3: Address range is A17:A-1 in byte mode and A17:A0 in word mode. See “Word/Byte Configuration”

section for more information.

address must appear on the appropriate highest order

Autoselect Mode

address bits (see Tables 2 and 3). Table 4 shows the

The autoselect mode provides manufacturer and

remaining address bits that are don’t care. When all

device identification, and sector protection verification,

necessary bits have been set as required, the program-

through identifier codes output on DQ7–DQ0. This

ming equipment may then read the corresponding

mode is primarily intended for programming equipment

identifier code on DQ7–DQ0.

to automatically match a device to be programmed with

its corresponding programming algorithm. However,

the autoselect codes can also be accessed in-system

through the command register.

To access the autoselect codes in-system, the host

system can issue the autoselect command via the

command register, as shown in Table 5. This method

does not require VID. See “Command Definitions” for

details on using the autoselect mode.

When using programming equipment, the autoselect

mode requires VID on address pin A9. Address pins

A6, A1, and A0 must be as shown in Table 4. In addi-

tion, when verifying sector protection, the sector

12

Am29SL400C

February 5, 2003

A D V A N C E I N F O R M A T I O N

Table 4. Am29SL400C Autoselect Codes (High Voltage Method)

A17 A11

to to

Mode CE# OE# WE# A12 A10 A9

A8

to

A7

A5

to

A2

DQ8

to

A0 DQ15

DQ7

to

DQ0

Description

A6

A1

Manufacturer ID: AMD

L

H

X

V_ID

X

L

X

L

X

01h

70h

Device ID:

Word

22h

Am29SL400C

(Top Boot Block)

X

V_ID

X

L

X

L

H

Byte

L

H

X

70h

Flh

Device ID:

Am29SL400C

(Bottom Boot

Block)

Word

22h

X

V_ID

X

H

L

Byte

L

H

X

FIh

01h

(protected)

X

Sector Protection Verification

L

H

SA

V_ID

L

H

00h

(unprotected)

L = Logic Low = V_IL, H = Logic High = V_IH, SA = Sector Address, X = Don’t care.

sectors at its factory prior to shipping the device

through AMD’s ExpressFlash™ Service. Contact an

AMD representative for details.

Sector Protection/Unprotection

The hardware sector protection feature disables both

program and erase operations in any sector. The hard-

ware sector unprotection feature re-enables both

program and erase operations in previously protected

sectors. Sector protection/unprotection can be imple-

mented via two methods.

It is possible to determine whether a sector is protected

or unprotected. See “Autoselect Mode” for details.

Temporary Sector Unprotect

This feature allows temporary unprotection of previ-

ously protected sectors to change data in-system. The

Sector Unprotect mode is activated by setting the

RESET# pin to V_ID. During this mode, formerly pro-

tected sectors can be programmed or erased by

selecting the sector addresses. Once V_IDis removed

from the RESET# pin, all the previously protected

sectors are protected again. Figure 2 shows the algo-

rithm, and Figure 22 shows the timing diagrams, for

this feature.

Sector protection/unprotection requires V_IDon the

RESET# pin only, and can be implemented either

in-system or via programming equipment. Figure 1

shows the algorithms and Figure 23 shows the timing

diagram. This method uses standard microprocessor

bus cycle timing. For sector unprotect, all unprotected

sectors must first be protected prior to the first sector

unprotect write cycle.

The device is shipped with all sectors unprotected.

AMD offers the option of programming and protecting

February 5, 2003

Am29SL400C

13

A D V A N C E I N F O R M A T I O N

START

Protect all sectors:

PLSCNT = 1

The indicated portion

of the sector protect

algorithm must be

performed for all

unprotected sectors

prior to issuing the

first sector

RESET# = V_ID

Wait 1 µs

unprotect address

No

First Write

No

First Write

Cycle = 60h?

Temporary Sector

Unprotect Mode

Temporary Sector

Unprotect Mode

Cycle = 60h?

Yes

Set up sector

address

No

All sectors

protected?

Sector Protect:

Write 60h to sector

address with

A6 = 0, A1 = 1,

A0 = 0

Yes

Set up first sector

address

Sector Unprotect:

Wait 150 µs

Write 60h to sector

address with

A6 = 1, A1 = 1,

A0 = 0

Verify Sector

Protect: Write 40h

to sector address

with A6 = 0,

Reset

PLSCNT = 1

Increment

PLSCNT

Wait 15 ms

A1 = 1, A0 = 0

Verify Sector

Unprotect: Write

40h to sector

address with

A6 = 1, A1 = 1,

A0 = 0

Read from

sector address

with A6 = 0,

A1 = 1, A0 = 0

Increment

PLSCNT

No

PLSCNT

= 25?

Read from

sector address

with A6 = 1,

Data = 01h?

Yes

A1 = 1, A0 = 0

No

Yes

Set up

next sector

address

Yes

No

PLSCNT

= 1000?

Protect another

sector?

Data = 00h?

Yes

Device failed

No

Yes

Remove V_ID

from RESET#

No

Last sector

verified?

Device failed

Write reset

command

Yes

Remove V_ID

Sector Unprotect

Algorithm

from RESET#

Sector Protect

Algorithm

Sector Protect

complete

Write reset

command

Sector Unprotect

complete

Figure 1. In-System Sector Protect/Unprotect Algorithms

Am29SL400C

14

February 5, 2003

A D V A N C E I N F O R M A T I O N

command definitions). In addition, the following hard-

ware data protection measures prevent accidental

erasure or programming, which might otherwise be

caused by spurious system level signals during V_CC

power-up and power-down transitions, or from system

noise.

START

RESET# = V_ID

Low V

Write Inhibit

CC

When V_CCis less than V_LKO, the device does not

accept any write cycles. This protects data during V_CC

power-up and power-down. The command register and

all internal program/erase circuits are disabled, and the

device resets. Subsequent writes are ignored until V_CC

is greater than V_LKO. The system must provide the

proper signals to the control pins to prevent uninten-

Perform Erase or

Program Operations

RESET# = V_IH

tional writes when V_CCis greater than V_LKO

.

Temporary Sector

Unprotect Completed

(Note 2)

Write Pulse “Glitch” Protection

Noise pulses of less than 5 ns (typical) on OE#, CE# or

WE# do not initiate a write cycle.

Logical Inhibit

Notes:

Write cycles are inhibited by holding any one of OE# =

V_IL, CE# = V_IHor WE# = V_IH. To initiate a write cycle,

CE# and WE# must be a logical zero while OE# is a

logical one.

1. All protected sectors unprotected.

2. All previously protected sectors are protected once

again.

Power-Up Write Inhibit

Figure 1. Temporary Sector Unprotect Operation

If WE# = CE# = V_ILand OE# = V_IHduring power up, the

device does not accept commands on the rising edge

of WE#. The internal state machine is automatically

reset to reading array data on power-up.

Hardware Data Protection

The command sequence requirement of unlock cycles

for programming or erasing provides data protection

against inadvertent writes (refer to Table 5 for

COMMAND DEFINITIONS

Writing specific address and data commands or

sequences into the command register initiates device

operations. Table 5 defines the valid register command

sequences. Writing incorrect address and data

values or writing them in the improper sequence

resets the device to reading array data.

timings, except that if it reads at an address within

erase-suspended sectors, the device outputs status

data. After completing a programming operation in the

Erase Suspend mode, the system may once again

read array data with the same exception. See “Erase

Suspend/Erase Resume Commands” for more infor-

mation on this mode.

All addresses are latched on the falling edge of WE# or

CE#, whichever happens later. All data is latched on

the rising edge of WE# or CE#, whichever happens

first. Refer to the appropriate timing diagrams in the

“AC Characteristics” section.

The system must issue the reset command to

re-enable the device for reading array data if DQ5 goes

high, or while in the autoselect mode. See the “Reset

Command” section, next.

See also “Requirements for Reading Array Data” in the

“Device Bus Operations” section for more information.

The Read Operations table provides the read parame-

ters, and Figure 13 shows the timing diagram.

Reading Array Data

The device is automatically set to reading array data

after device power-up. No commands are required to

retrieve data. The device is also ready to read array

data after completing an Embedded Program or

Embedded Erase algorithm.

Reset Command

Writing the reset command to the device resets the

device to reading array data. Address bits are don’t

care for this command.

After the device accepts an Erase Suspend command,

the device enters the Erase Suspend mode. The

system can read array data using the standard read

February 5, 2003

Am29SL400C

15

A D V A N C E I N F O R M A T I O N

The reset command may be written between the

in turn initiate the Embedded Program algorithm. The

system is not required to provide further controls or tim-

ings. The device automatically generates the program

pulses and verifies the programmed cell margin. Table

5 shows the address and data requirements for the

byte program command sequence.

sequence cycles in an erase command sequence

before erasing begins. This resets the device to

reading array data. Once erasure begins, however, the

device ignores reset commands until the operation is

complete.

The reset command may be written between the

sequence cycles in a program command sequence

before programming begins. This resets the device to

reading array data (also applies to programming in

Erase Suspend mode). Once programming begins,

however, the device ignores reset commands until the

operation is complete.

When the Embedded Program algorithm is complete,

the device then returns to reading array data and

addresses are no longer latched. The system can

determine the status of the program operation by using

DQ7, DQ6, or RY/BY#. See “Write Operation Status”

for information on these status bits.

Any commands written to the device during the

Embedded Program Algorithm are ignored. Note that a

hardware reset immediately terminates the program-

ming operation. The Byte Program command

sequence should be reinitiated once the device has

reset to reading array data, to ensure data integrity.

The reset command may be written between the

sequence cycles in an autoselect command sequence.

Once in the autoselect mode, the reset command must

be written to return to reading array data (also applies

to autoselect during Erase Suspend).

If DQ5 goes high during a program or erase operation,

writing the reset command returns the device to

reading array data (also applies during Erase Sus-

pend).

Programming is allowed in any sequence and across

sector boundaries. A bit cannot be programmed

from a “0” back to a “1”. Attempting to do so may halt

the operation and set DQ5 to “1”, or cause the Data#

Polling algorithm to indicate the operation was suc-

cessful. However, a succeeding read will show that the

data is still “0”. Only erase operations can convert a “0”

to a “1”.

Autoselect Command Sequence

The autoselect command sequence allows the host

system to access the manufacturer and devices codes,

and determine whether or not a sector is protected.

Table 5 shows the address and data requirements.

This method is an alternative to that shown in Table 4,

which is intended for PROM programmers and requires

V_IDon address bit A9.

Unlock Bypass Command Sequence

The unlock bypass feature allows the system to

program bytes or words to the device faster than using

the standard program command sequence. The unlock

bypass command sequence is initiated by first writing

two unlock cycles. This is followed by a third write cycle

containing the unlock bypass command, 20h. The

device then enters the unlock bypass mode. A

two-cycle unlock bypass program command sequence

is all that is required to program in this mode. The first

cycle in this sequence contains the unlock bypass

program command, A0h; the second cycle contains the

program address and data. Additional data is pro-

grammed in the same manner. This mode dispenses

with the initial two unlock cycles required in the stan-

dard program command sequence, resulting in faster

total programming time. Table 5 shows the require-

ments for the command sequence.

The autoselect command sequence is initiated by

writing two unlock cycles, followed by the autoselect

command. The device then enters the autoselect

mode, and the system may read at any address any

number of times, without initiating another command

sequence. A read cycle at address XX00h retrieves the

manufacturer code. A read cycle at address 01h in

word mode (or 02h in byte mode) returns the device

code. A read cycle containing a sector address (SA)

and the address 02h in word mode (or 04h in byte

mode) returns 01h if that sector is protected, or 00h if it

is unprotected. Refer to Tables 2 and 3 for valid sector

addresses.

The system must write the reset command to exit the

autoselect mode and return to reading array data.

During the unlock bypass mode, only the Unlock

Bypass Program and Unlock Bypass Reset commands

are valid. To exit the unlock bypass mode, the system

must issue the two-cycle unlock bypass reset

command sequence. The first cycle must contain the

data 90h; the second cycle the data 00h. Addresses

are don’t cares. The device then returns to reading

array data.

Word/Byte Program Command Sequence

The system may program the device by word or byte,

depending on the state of the BYTE# pin. Program-

ming is a four-bus-cycle operation. The program

command sequence is initiated by writing two unlock

write cycles, followed by the program set-up command.

The program address and data are written next, which

Figure 3 illustrates the algorithm for the program oper-

ation. See the Erase/Program Operations table in “AC

16

Am29SL400C

February 5, 2003

A D V A N C E I N F O R M A T I O N

Characteristics” for parameters, and to Figure 17 for

timing diagrams.

diately terminates the operation. The Chip Erase

command sequence should be reinitiated once the

device has returned to reading array data, to ensure

data integrity.

The system can determine the status of the erase oper-

ation by using DQ7, DQ6, DQ2, or RY/BY#. See “Write

Operation Status” for information on these status bits.

When the Embedded Erase algorithm is complete, the

device returns to reading array data and addresses are

no longer latched.

START

Write Program

Command Sequence

Figure 4 illustrates the algorithm for the erase opera-

tion. See the Erase/Program Operations tables in “AC

Characteristics” for parameters, and to Figure 18 for

timing diagrams.

Data Poll

from System

Embedded

Program

algorithm

in progress

Sector Erase Command Sequence

Sector erase is a six bus cycle operation. The sector

erase command sequence is initiated by writing two

unlock cycles, followed by a set-up command. Two

additional unlock write cycles are then followed by the

address of the sector to be erased, and the sector

erase command. Table 5 shows the address and data

requirements for the sector erase command sequence.

Verify Data?

Yes

No

Increment Address

Last Address?

Yes

The device does not require the system to preprogram

the memory prior to erase. The Embedded Erase algo-

rithm automatically programs and verifies the sector for

an all zero data pattern prior to electrical erase. The

system is not required to provide any controls or

timings during these operations.

Programming

Completed

After the command sequence is written, a sector erase

time-out of 50 µs begins. During the time-out period,

additional sector addresses and sector erase com-

mands may be written. Loading the sector erase buffer

may be done in any sequence, and the number of

sectors may be from one sector to all sectors. The time

between these additional cycles must be less than 50

µs, otherwise the last address and command might not

be accepted, and erasure may begin. It is recom-

mended that processor interrupts be disabled during

this time to ensure all commands are accepted. The

interrupts can be re-enabled after the last Sector Erase

command is written. If the time between additional

sector erase commands can be assumed to be less

than 50 µs, the system need not monitor DQ3. Any

command other than Sector Erase or Erase

Suspend during the time-out period resets the

device to reading array data. The system must

rewrite the command sequence and any additional

sector addresses and commands.

Note: See Table 5 for program command sequence.

Figure 2. Program Operation

Chip Erase Command Sequence

Chip erase is a six bus cycle operation. The chip erase

command sequence is initiated by writing two unlock

cycles, followed by a set-up command. Two additional

unlock write cycles are then followed by the chip erase

command, which in turn invokes the Embedded Erase

algorithm. The device does not require the system to

preprogram prior to erase. The Embedded Erase algo-

rithm automatically preprograms and verifies the entire

memory for an all zero data pattern prior to electrical

erase. The system is not required to provide any con-

trols or timings during these operations. Table 5 shows

the address and data requirements for the chip erase

command sequence.

The system can monitor DQ3 to determine if the sector

erase timer has timed out. (See the “DQ3: Sector

Erase Timer” section.) The time-out begins from the

rising edge of the final WE# pulse in the command

sequence.

Any commands written to the chip during the

Embedded Erase algorithm are ignored. Note that a

hardware reset during the chip erase operation imme-

February 5, 2003

Am29SL400C

17

A D V A N C E I N F O R M A T I O N

Once the sector erase operation has begun, only the

After an erase-suspended program operation is com-

plete, the system can once again read array data within

non-suspended sectors. The system can determine the

status of the program operation using the DQ7 or DQ6

status bits, just as in the standard program operation.

See “Write Operation Status” for more information.

Erase Suspend command is valid. All other commands

are ignored. Note that a hardware reset during the

sector erase operation immediately terminates the

operation. The Sector Erase command sequence

should be reinitiated once the device has returned to

reading array data, to ensure data integrity.

The system may also write the autoselect command

sequence when the device is in the Erase Suspend

mode. The device allows reading autoselect codes

even at addresses within erasing sectors, since the

codes are not stored in the memory array. When the

device exits the autoselect mode, the device reverts to

the Erase Suspend mode, and is ready for another valid

operation. See “Autoselect Command Sequence” for

more information.

When the Embedded Erase algorithm is complete, the

device returns to reading array data and addresses are

no longer latched. The system can determine the status

of the erase operation by using DQ7, DQ6, DQ2, or

RY/BY#. (Refer to “Write Operation Status” for informa-

tion on these status bits.)

Figure 4 illustrates the algorithm for the erase operation.

Refer to the Erase/Program Operations tables in the

“AC Characteristics” section for parameters, and to

Figure 18 for timing diagrams.

The system must write the Erase Resume command

(address bits are “don’t care”) to exit the erase suspend

mode and continue the sector erase operation. Further

writes of the Resume command are ignored. Another

Erase Suspend command can be written after the

device has resumed erasing.

Erase Suspend/Erase Resume Commands

The Erase Suspend command allows the system to

interrupt a sector erase operation and then read data

from, or program data to, any sector not selected for

erasure. This command is valid only during the sector

erase operation, including the 50 µs time-out period

during the sector erase command sequence. The Erase

Suspend command is ignored if written during the chip

erase operation or Embedded Program algorithm.

Writing the Erase Suspend command during the Sector

Erase time-out immediately terminates the time-out

period and suspends the erase operation. Addresses

are “don’t-cares” when writing the Erase Suspend com-

mand.

START

Write Erase

Command Sequence

Data Poll

When the Erase Suspend command is written during a

sector erase operation, the device requires a maximum

of 20 µs to suspend the erase operation. However,

when the Erase Suspend command is written during the

sector erase time-out, the device immediately termi-

nates the time-out period and suspends the erase oper-

ation.

from System

Embedded

Erase

algorithm

in progress

No

Data = FFh?

After the erase operation has been suspended, the

system can read array data from or program data to any

sector not selected for erasure. (The device “erase sus-

pends” all sectors selected for erasure.) Normal read

and write timings and command definitions apply.

Reading at any address within erase-suspended

sectors produces status data on DQ7–DQ0. The

system can use DQ7, or DQ6 and DQ2 together, to

determine if a sector is actively erasing or is erase-sus-

pended. See “Write Operation Status” for information on

these status bits.

Yes

Erasure Completed

Notes:

1. See Table 5 for erase command sequence.

2. See “DQ3: Sector Erase Timer” for more information.

Figure 3. Erase Operation

18

Am29SL400C

February 5, 2003

A D V A N C E I N F O R M A T I O N

Command Definitions

Table 5. Am29SL400C Command Definitions

Bus Cycles (Notes 2-5)

Command

Sequence

(Note 1)

First

Second

Third

Addr

Fourth

Fifth

Sixth

Addr Data Addr Data

Data Addr Data Addr Data Addr Data

Read (Note 6)

Reset (Note 7)

1

RA

XXX

555

RD

F0

Word

2AA

555

2AA

555

2AA

555

AAA

555

Manufacturer ID

4

AA

55

90

X00

01

Byte

Word

Byte

Word

Byte

AAA

555

X01

X02

X01

X02

70h

FIh

Device ID,

Top Boot Block

AAA

555

AAA

555

Device ID,

Bottom Boot Block

AAA

FIh

XX00

XX01

00

(SA)

X02

Word

Byte

555

2AA

555

Sector Protect Verify

(Note 9)

4

AA

55

90

(SA)

X04

AAA

01

Word

Byte

Word

Byte

555

AAA

555

2AA

555

2AA

555

PA

555

AAA

555

Program

Unlock Bypass

4

3

AA

55

A0

20

PA

PD

AAA

XXX

555

AAA

Unlock Bypass Program (Note 10)

Unlock Bypass Reset (Note 11)

2

A0

90

PD

00

XXX

2AA

555

2AA

555

Word

555

AAA

555

AAA

555

2AA

555

2AA

555

Chip Erase

Byte

6

AA

55

80

AA

55

10

30

AAA

555

AAA

Word

Sector Erase

Byte

SA

AAA

XXX

AAA

Erase Suspend (Note 12)

Erase Resume (Note 13)

1

B0

30

Legend:

X = Don’t care

PD = Data to be programmed at location PA. Data latches on the

rising edge of WE# or CE# pulse, whichever happens first.

RA = Address of the memory location to be read.

SA = Address of the sector to be verified (in autoselect mode) or

erased. Address bits A17–A12 uniquely select any sector.

RD = Data read from location RA during read operation.

PA = Address of the memory location to be programmed.

Addresses latch on the falling edge of the WE# or CE# pulse,

whichever happens later.

Notes:

1. See Table 1 for description of bus operations.

9. The data is 00h for an unprotected sector and 01h for a

protected sector. See “Autoselect Command Sequence” for

more information.

2. All values are in hexadecimal.

3. Except when reading array or autoselect data, all bus

cycles are write operations.

10. The Unlock Bypass command is required prior to the

Unlock Bypass Program command.

4. Data bits DQ15–DQ8 are don’t cares for unlock and

command cycles.

11. The Unlock Bypass Reset command is required to return

to reading array data when the device is in the unlock

bypass mode.

5. Address bits A17–A11 are don’t cares for unlock and

command cycles, unless SA or PA required.

12. The system may read and program in non-erasing

sectors, or enter the autoselect mode, when in the Erase

Suspend mode. The Erase Suspend command is valid

only during a sector erase operation.

6. No unlock or command cycles required when reading

array data, unless SA or PA required.

7. The Reset command is required to return to reading array

data when device is in the autoselect mode, or if DQ5

goes high (while the device is providing status data).

13. The Erase Resume command is valid only during the Erase

Suspend mode.

8. The fourth cycle of the autoselect command sequence is

a read cycle.

February 5, 2003

Am29SL400C

19

A D V A N C E I N F O R M A T I O N

Table 6 shows the outputs for Data# Polling on DQ7.

Figure 5 shows the Data# Polling algorithm.

Write Operation Status

The device provides several bits to determine the

status of a write operation: DQ2, DQ3, DQ5, DQ6,

DQ7, and RY/BY#. Table 6 and the following subsec-

tions describe the functions of these bits. DQ7,

RY/BY#, and DQ6 each offer a method for determining

whether a program or erase operation is complete or in

progress. These three bits are discussed first.

START

Read DQ7–DQ0

Addr = VA

DQ7: Data# Polling

The Data# Polling bit, DQ7, indicates to the host

system whether an Embedded Algorithm is in progress

or completed, or whether the device is in Erase Sus-

pend. Data# Polling is valid after the rising edge of the

final WE# pulse in the program or erase command

sequence.

Yes

DQ7 = Data?

During the Embedded Program algorithm, the device

outputs on DQ7 the complement of the datum pro-

grammed to DQ7. This DQ7 status also applies to pro-

gramming during Erase Suspend. When the

Embedded Program algorithm is complete, the device

outputs the datum programmed to DQ7. The system

must provide the program address to read valid status

information on DQ7. If a program address falls within a

protected sector, Data# Polling on DQ7 is active for

approximately 1 µs, then the device returns to reading

array data.

No

DQ5 = 1?

Yes

Read DQ7–DQ0

Addr = VA

During the Embedded Erase algorithm, Data# Polling

produces a “0” on DQ7. When the Embedded Erase

algorithm is complete, or if the device enters the Erase

Suspend mode, Data# Polling produces a “1” on DQ7.

This is analogous to the complement/true datum output

described for the Embedded Program algorithm: the

erase function changes all the bits in a sector to “1”;

prior to this, the device outputs the “complement,” or

“0.” The system must provide an address within any of

the sectors selected for erasure to read valid status

information on DQ7.

Yes

DQ7 = Data?

No

PASS

FAIL

Notes:

After an erase command sequence is written, if all

sectors selected for erasing are protected, Data#

Polling on DQ7 is active for approximately 100 µs, then

the device returns to reading array data. If not all

selected sectors are protected, the Embedded Erase

algorithm erases the unprotected sectors, and ignores

the selected sectors that are protected.

1. VA = Valid address for programming. During a sector

erase operation, a valid address is an address within any

sector selected for erasure. During chip erase, a valid

address is any non-protected sector address.

2. DQ7 should be rechecked even if DQ5 = “1” because

DQ7 may change simultaneously with DQ5.

When the system detects DQ7 has changed from the

complement to true data, it can read valid data at

DQ7–DQ0 on the following read cycles. This is

because DQ7 may change asynchronously with

DQ0–DQ6 while Output Enable (OE#) is asserted low.

Figure 19, Data# Polling Timings (During Embedded

Algorithms), in the “AC Characteristics” section illus-

trates this.

Figure 4. Data# Polling Algorithm

RY/BY#: Ready/Busy#

The RY/BY# is a dedicated, open-drain output pin that

indicates whether an Embedded Algorithm is in

progress or complete. The RY/BY# status is valid after

the rising edge of the final WE# pulse in the command

sequence. Since RY/BY# is an open-drain output,

20

Am29SL400C

February 5, 2003

A D V A N C E I N F O R M A T I O N

several RY/BY# pins can be tied together in parallel

with a pull-up resistor to V_CC

DQ2 and DQ6 in graphical form. See also the subsec-

tion on DQ2: Toggle Bit II.

.

If the output is low (Busy), the device is actively erasing

or programming. (This includes programming in the

Erase Suspend mode.) If the output is high (Ready),

the device is ready to read array data (including during

the Erase Suspend mode), or is in the standby mode.

DQ2: Toggle Bit II

The “Toggle Bit II” on DQ2, when used with DQ6, indi-

cates whether a particular sector is actively erasing

(that is, the Embedded Erase algorithm is in progress),

or whether that sector is erase-suspended. Toggle Bit

II is valid after the rising edge of the final WE# pulse in

the command sequence. The device toggles DQ2 with

each OE# or CE# read cycle.

Table 6 shows the outputs for RY/BY#. Figures 14, 17

and 18 shows RY/BY# for reset, program, and erase

operations, respectively.

DQ2 toggles when the system reads at addresses

within those sectors that have been selected for era-

sure. But DQ2 cannot distinguish whether the sector is

actively erasing or is erase-suspended. DQ6, by com-

parison, indicates whether the device is actively

erasing, or is in Erase Suspend, but cannot distinguish

which sectors are selected for erasure. Thus, both

status bits are required for sector and mode informa-

tion. Refer to Table 6 to compare outputs for DQ2 and

DQ6.

DQ6: Toggle Bit I

Toggle Bit I on DQ6 indicates whether an Embedded

Program or Erase algorithm is in progress or complete,

or whether the device has entered the Erase Suspend

mode. Toggle Bit I may be read at any address, and is

valid after the rising edge of the final WE# pulse in the

command sequence (prior to the program or erase

operation), and during the sector erase time-out.

During an Embedded Program or Erase algorithm

operation, successive read cycles to any address

cause DQ6 to toggle (The system may use either OE#

or CE# to control the read cycles). When the operation

is complete, DQ6 stops toggling.

Figure 6 shows the toggle bit algorithm in flowchart

form, and the section “DQ2: Toggle Bit II” explains the

algorithm. See also the DQ6: Toggle Bit I subsection.

Figure 20 shows the toggle bit timing diagram. Figure

21 shows the differences between DQ2 and DQ6 in

graphical form.

After an erase command sequence is written, if all

sectors selected for erasing are protected, DQ6

toggles for approximately 100 µs, then returns to

reading array data. If not all selected sectors are pro-

tected, the Embedded Erase algorithm erases the

unprotected sectors, and ignores the selected sectors

that are protected.

Reading Toggle Bits DQ6/DQ2

Refer to Figure 6 for the following discussion. When-

ever the system initially begins reading toggle bit

status, it must read DQ7–DQ0 at least twice in a row to

determine whether a toggle bit is toggling. Typically, the

system would note and store the value of the toggle bit

after the first read. After the second read, the system

would compare the new value of the toggle bit with the

first. If the toggle bit is not toggling, the device has com-

pleted the program or erase operation. The system can

read array data on DQ7–DQ0 on the following read

cycle.

The system can use DQ6 and DQ2 together to deter-

mine whether a sector is actively erasing or is

erase-suspended. When the device is actively erasing

(that is, the Embedded Erase algorithm is in progress),

DQ6 toggles. When the device enters the Erase

Suspend mode, DQ6 stops toggling. However, the

system must also use DQ2 to determine which sectors

are erasing or erase-suspended. Alternatively, the

system can use DQ7 (see the subsection on DQ7:

Data# Polling).

However, if after the initial two read cycles, the system

determines that the toggle bit is still toggling, the

system also should note whether the value of DQ5 is

high (see the section on DQ5). If it is, the system

should then determine again whether the toggle bit is

toggling, since the toggle bit may have stopped tog-

gling just as DQ5 went high. If the toggle bit is no longer

toggling, the device has successfully completed the

program or erase operation. If it is still toggling, the

device did not completed the operation successfully,

and the system must write the reset command to return

to reading array data.

If a program address falls within a protected sector,

DQ6 toggles for approximately 1 µs after the program

command sequence is written, then returns to reading

array data.

DQ6 also toggles during the erase-suspend-program

mode, and stops toggling once the Embedded

Program algorithm is complete.

Table 6 shows the outputs for Toggle Bit I on DQ6.

Figure 6 shows the toggle bit algorithm. Figure 20 in the

“AC Characteristics” section shows the toggle bit timing

diagrams. Figure 21 shows the differences between

The remaining scenario is that the system initially

determines that the toggle bit is toggling and DQ5 has

not gone high. The system may continue to monitor the

February 5, 2003

Am29SL400C

21

A D V A N C E I N F O R M A T I O N

toggle bit and DQ5 through successive read cycles,

DQ5: Exceeded Timing Limits

determining the status as described in the previous

paragraph. Alternatively, it may choose to perform

other system tasks. In this case, the system must start

at the beginning of the algorithm when it returns to

determine the status of the operation (top of Figure 6).

DQ5 indicates whether the program or erase time has

exceeded a specified internal pulse count limit. Under

these conditions DQ5 produces a “1.” This is a failure

condition that indicates the program or erase cycle was

not successfully completed.

The DQ5 failure condition may appear if the system

tries to program a “1” to a location that is previously

programmed to “0.” Only an erase operation can

change a “0” back to a “1.” Under this condition, the

device halts the operation, and when the operation has

exceeded the timing limits, DQ5 produces a “1.”

START

Read DQ7–DQ0

(Note 1)

Under both these conditions, the system must issue

the reset command to return the device to reading

array data.

Read DQ7–DQ0

DQ3: Sector Erase Timer

After writing a sector erase command sequence, the

system may read DQ3 to determine whether or not an

erase operation has begun. (The sector erase timer

does not apply to the chip erase command.) If addi-

tional sectors are selected for erasure, the entire

time-out also applies after each additional sector erase

command. When the time-out is complete, DQ3

switches from “0” to “1.” If the time between additional

sector erase commands from the system can be

assumed to be less than 50 µs, the system need not

monitor DQ3. See also the “Sector Erase Command

Sequence” section.

No

Toggle Bit

= Toggle?

Yes

No

DQ5 = 1?

Yes

After the sector erase command sequence is written,

the system should read the status on DQ7 (Data#

Polling) or DQ6 (Toggle Bit I) to ensure the device has

accepted the command sequence, and then read DQ3.

If DQ3 is “1”, the internally controlled erase cycle has

begun; all further commands (other than Erase Sus-

pend) are ignored until the erase operation is complete.

If DQ3 is “0”, the device will accept additional sector

erase commands. To ensure the command has been

accepted, the system software should check the status

of DQ3 prior to and following each subsequent sector

erase command. If DQ3 is high on the second status

check, the last command might not have been

accepted. Table 6 shows the outputs for DQ3.

(Notes

1, 2)

Read DQ7–DQ0

Twice

Toggle Bit

= Toggle?

No

Yes

Program/Erase

Operation Not

Complete, Write

Reset Command

Program/Erase

Operation Complete

Notes:

1. Read toggle bit twice to determine whether or not it is

toggling. See text.

2. Recheck toggle bit because it may stop toggling as DQ5

changes to “1” . See text.

Figure 5. Toggle Bit Algorithm

22

Am29SL400C

February 5, 2003

A D V A N C E I N F O R M A T I O N

Table 6. Write Operation Status

DQ7

DQ5

DQ2

Operation

(Note 2)

DQ6

(Note 1)

DQ3

N/A

1

(Note 2)

RY/BY#

Embedded Program Algorithm

Embedded Erase Algorithm

DQ7#

0

Toggle

0

No toggle

Toggle

0

Standard

Mode

Reading within Erase

Suspended Sector

1

No toggle

0

N/A

Toggle

1

Erase

Suspend

Mode

Reading within Non-Erase

Suspended Sector

Data

0

Data

N/A

Data

N/A

1

0

Erase-Suspend-Program

DQ7#

Toggle

Notes:

1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum iming limits.

See “DQ5: Exceeded Timing Limits”for more information.

2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.

February 5, 2003

Am29SL400C

23

A D V A N C E I N F O R M A T I O N

ABSOLUTE MAXIMUM RATINGS

Storage Temperature

Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C

20 ns

Ambient Temperature

with Power Applied . . . . . . . . . . . . . –65°C to +125°C

0.0 V

Voltage with Respect to Ground

–0.5 V

–2.0 V

. . . . . . . . . . . . . . . . . . . V_CC(Note 1)–0.5 V to +2.5 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A9,OE#,

and RESET# (Note 2) . . . . . . . . . . . –0.5 V to +11.0 V

20 ns

. . . . . . . . . All other pins (Note 1)–0.5 V to V_CC+0.5 V

Output Short Circuit Current (Note 3) . . . . . . 100 mA

Figure 6. Maximum Negative

Overshoot Waveform

Notes:

1. Minimum DC voltage on input or I/O pins is –0.5 V. During

voltage transitions, input or I/O pins may overshoot V_SS

to –2.0 V for periods of up to 20 ns. See Figure 7.

Maximum DC voltage on input or I/O pins is V_CC+0.5 V.

During voltage transitions, input or I/O pins may

overshoot to V_CC+2.0 V for periods up to 20 ns. See

Figure 8.

20 ns

V_CC

+2.0 V

V_CC

+0.5 V

2. Minimum DC input voltage on pins A9, OE#, and RESET#

is –0.5 V. During voltage transitions, A9, OE#, and

RESET# may overshoot V_SSto –2.0 V for periods of up

to 20 ns. See . Maximum DC input voltage on pin A9 is

+11.0 V which may overshoot to 12.5 V for periods up to

20 ns.

2.0 V

20 ns

3. No more than one output may be shorted to ground at a

time. Duration of the short circuit should not be greater

than one second.

Figure 7. Maximum Positive

Overshoot Waveform

Stresses above those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device. This

is a stress rating only; functional operation of the device at

these or any other conditions above those indicated in the

operational sections of this data sheet is not implied.

Exposure of the device to absolute maximum rating

conditions for extended periods may affect device reliability.

OPERATING RANGES

Commercial (C) Devices

Ambient Temperature (T_A) . . . . . . . . . . . 0°C to +70°C

Industrial (I) Devices

Ambient Temperature (T_A) . . . . . . . . . –40°C to +85°C

V_CCSupply Voltages

V_CCfor full voltage range. . . . . . . . .+1.65 V to +2.2 V

V_CCfor regulated voltage range. . . .+1.70 V to +2.2 V

Operating ranges define those limits between which

the functionality of the device is guaranteed.

24

Am29SL400C

February 5, 2003

A D V A N C E I N F O R M A T I O N

DC CHARACTERISTICS

CMOS Compatible

Parameter

Description

Test Conditions

V_IN= V_SSto V_CC

Min

Typ

Max

±1.0

35

Unit

µA

,

I_LI

Input Load Current

V_CC= V_{CC max}

V_CC= V_{CC max}; A9 = 11.0 V

V_OUT= V_SSto V_CC

I_LIT

I_LO

A9 Input Load Current

Output Leakage Current

µA

,

±1.0

µA

V_CC= V_{CC max}

5 MHz

1 MHz

5 MHz

1 MHz

5

1

5

1

10

3

CE# = V_IL,OE# ₌V_IH,

Byte Mode

V_CCActive Read Current

(Notes 1, 2)

I_CC1

mA

10

3

CE# = V_IL,OE# ₌V_IH,

Word Mode

V_CCActive Write Current

(Notes 2, 3, 5)

I_CC2

CE# = V_IL,OE# ₌V_IH

20

25

I_CC3

I_CC4

V_CCStandby Current (Note 2)

V_CCReset Current (Note 2)

CE#, RESET# = V_CC± 0.2 V

RESET# = V_SS± 0.2 V

1

5

µA

Automatic Sleep Mode

(Notes 2, 3)

V_IH= V_CC± 0.2 V;

V_IL= V_SS± 0.2 V

I_CC5

1

5

µA

V_IL

V_IH

Input Low Voltage

Input High Voltage

–0.5

0.2 x V_CC

V_CC+ 0.3

V

0.8 x V_CC

Voltage for Autoselect and

Temporary Sector Unprotect

V_ID

V_CC= 2.0 V

9.0

11.0

V

V_OL1

V_OL2

V_OH1

V_OH2

I_OL= 2.0 mA, V_CC= V_{CC min}

I_OL= 100 µA, V_CC= V_{CC min}

I_OH= –2.0 mA, V_CC= V_{CC min}

I_OH= –100 µA, V_CC= V_{CC min}

0.25

0.1

V

Output Low Voltage

Output High Voltage

0.7 x V_CC

V_CC–0.1

Low V_CCLock-Out Voltage

(Note 4)

V_LKO

1.2

1.5

V

Notes:

1. The I_CCcurrent listed is typically less than 1 mA/MHz, with OE# at V_IH. Typical V_CCis 2.0 V.

2. The maximum I_CCspecifications are tested with V_CC= V_CCmax.

3. I_CCactive while Embedded Erase or Embedded Program is in progress.

4. Automatic sleep mode enables the low power mode when addresses remain stable for t_ACC+ 50 ns.

5. Not 100% tested.

February 5, 2003

Am29SL400C

25

A D V A N C E I N F O R M A T I O N

DC CHARACTERISTICS (Continued)

Zero Power Flash

20

15

10

5

0

500

1000

1500

2000

2500

3000

3500

4000

Time in ns

Note: Addresses are switching at 1 MHz

Figure 8. I_CC1Current vs. Time (Showing Active and Automatic Sleep Currents)

10

8

6

2.2 V

4

1.8 V

2

0

1

2

3

4

5

Frequency in MHz

Note: T = 25 °C

Figure 9. Typical I_CC1vs. Frequency

26

Am29SL400C

February 5, 2003

A D V A N C E I N F O R M A T I O N

TEST CONDITIONS

Table 7. Test Specifications

Test Condition

All Speed Options Unit

Output Load Capacitance, C_L

(including jig capacitance)

30

pF

Device

Under

Test

Input Rise and Fall Times

Input Pulse Levels

5

ns

V

0.0–2.0

C

L

Input timing measurement

reference levels

1.0

V

Output timing measurement

reference levels

Figure 10. Test Setup

Key to Switching Waveforms

WAVEFORM

INPUTS

OUTPUTS

Steady

Changing from H to L

Changing from L to H

Don’t Care, Any Change Permitted

Does Not Apply

Changing, State Unknown

Center Line is High Impedance State (High Z)

2.0 V

0.0 V

1.0 V

Input

Measurement Level

Output

Figure 11. Input Waveforms and Measurement Levels

February 5, 2003

Am29SL400C

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A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

Read Operations

Parameter

Speed Options

JEDEC

Std

Description

Test Setup

Min

-100R

-110

-120

-150 Unit

t_AVAV

t_RC

Read Cycle Time (Note 1)

100

110

120

150

ns

CE# = V_IL

OE# = V_IL

t_AVQV

t_ACCAddress to Output Delay

Max

100

110

120

t_ELQV

t_GLQV

t_EHQZ

t_GHQZ

t_CE

t_OE

t_DF

Chip Enable to Output Delay

OE# = V_ILMax

100

35

110

45

120

50

150

65

ns

Output Enable to Output Delay

Max

Min

Chip Enable to Output High Z (Note 1)

Output Enable to Output High Z (Note 1)

16

0

Read

Output Enable

Hold Time (Note 1)

t_OEH

Toggle and

Data# Polling

Min

30

0

ns

Output Hold Time From Addresses, CE# or

OE#, Whichever Occurs First (Note 1)

t_AXQX

t_OH

Notes:

1. Not 100% tested.

2. See Figure 11 and Table 7 for test specifications.

t_RC

Addresses Stable

Addresses

CE#

t_ACC

t_DF

t_OE

OE#

t_OEH

WE#

t_CE

t_OH

HIGH Z

Output Valid

Outputs

RESET#

RY/BY#

0 V

Figure 12. Read Operations Timings

28

Am29SL400C

February 5, 2003

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

Hardware Reset (RESET#)

Parameter

JEDEC

Std

Description

Test Setup

Max

All Speed Options

Unit

RESET# Pin Low (During Embedded

Algorithms) to Read or Write (See Note)

t_READY

20

µs

RESET# Pin Low (NOT During Embedded

Algorithms) to Read or Write (See Note)

t_READY

Max

500

ns

t_RP

t_RH

RESET# Pulse Width

Min

500

200

20

ns

µs

ns

RESET# High Time Before Read (See Note)

t_RPDRESET# Low to Standby Mode

t_RBRY/BY# Recovery Time

0

Note: Not 100% tested.

RY/BY#

CE#, OE#

RESET#

t_RH

t_RP

t_Ready

Reset Timings NOT during Embedded Algorithms

Reset Timings during Embedded Algorithms

t_Ready

RY/BY#

t_RB

CE#, OE#

RESET#

t_RP

Figure 13. RESET# Timings

February 5, 2003

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A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

Word/Byte Configuration (BYTE#)

Parameter

Speed Options

JEDEC

Std

t_{ELFL/ ELFH}

t_FLQZ

t_FHQV

Description

-100

-120

10

-150

Unit

ns

t

CE# to BYTE# Switching Low or High

BYTE# Switching Low to Output HIGH Z

BYTE# Switching High to Output Active

Max

Min

50

60

ns

100

120

150

ns

CE#

OE#

BYTE#

t_ELFL

Data Output

(DQ0–DQ14)

Data Output

(DQ0–DQ7)

BYTE#

Switching

from word

to byte

DQ0–DQ14

Address

Input

DQ15

Output

mode

DQ15/A-1

BYTE#

t_FLQZ

t_ELFH

BYTE#

Switching

from byte

to word

Data Output

(DQ0–DQ7)

Data Output

(DQ0–DQ14)

DQ0–DQ14

DQ15/A-1

mode

Address

Input

DQ15

Output

t_FHQV

Figure 14. BYTE# Timings for Read Operations

CE#

The falling edge of the last WE# signal

WE#

BYTE#

t_SET

(t_AS

)

t_HOLD(t_AH

)

Note: Refer to the Erase/Program Operations table for t_ASand t_AHspecifications.

Figure 15. BYTE# Timings for Write Operations

Am29SL400C

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February 5, 2003

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

Erase/Program Operations

Parameter

Speed Options

JEDEC

t_AVAV

Std

t_WC

t_AS

Description

Write Cycle Time (Note 1)

-100R

-110

-120

-150

Unit

ns

Min

100

110

120

150

t_AVWL

t_WLAX

t_DVWH

t_WHDX

Address Setup Time

Address Hold Time

Data Setup Time

0

ns

t_AH

50

55

60

70

ns

t_DS

ns

t_DH

t_OES

Data Hold Time

0

ns

Output Enable Setup Time

ns

Read Recovery Time Before Write

(OE# High to WE# Low)

t_GHWL

Min

0

ns

t_ELWL

t_WHEH

t_WLWH

t_WHWL

t_CS

t_CH

t_WP

CE# Setup Time

CE# Hold Time

Write Pulse Width

Min

Typ

Min

0

ns

50

55

60

70

t_WPHWrite Pulse Width High

30

10

12

2

Byte

t_WHWH1

t_WHWH2

t_WHWH1Programming Operation (Notes 1, 2)

µs

Word

t_WHWH2Sector Erase Operation (Notes 1, 2)

sec

µs

t_VCS

t_RB

V_CCSetup Time

50

0

Recovery Time from RY/BY#

ns

t_BUSYProgram/Erase Valid to RY/BY# Delay

200

ns

Notes:

1. Not 100% tested.

2. See the “Erase and Programming Performance” section for more information.

February 5, 2003

Am29SL400C

31

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

Program Command Sequence (last two cycles)

Read Status Data (last two cycles)

t_AS

PA

t_WC

Addresses

555h

PA

t_AH

CE#

OE#

t_CH

t_WHWH1

t_WP

WE#

Data

t_WPH

t_CS

t_DS

t_DH

PD

D_OUT

A0h

Status

t_BUSY

t_RB

RY/BY#

V_CC

t_VCS

Notes:

1. PA = program address, PD = program data, D_OUTis the true data at the program address.

2. Illustration shows device in word mode.

Figure 16. Program Operation Timings

32

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February 5, 2003

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

Erase Command Sequence (last two cycles)

Read Status Data

VA

t_AS

SA

t_WC

VA

Addresses

CE#

2AAh

555h for chip erase

t_AH

t_CH

OE#

t_WP

WE#

t_WPH

t_WHWH2

t_CS

t_DS

t_DH

In

Data

Complete

55h

30h

Progress

10 for Chip Erase

t_BUSY

t_RB

RY/BY#

V_CC

t_VCS

Notes:

1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).

2. Illustration shows device in word mode.

Figure 17. Chip/Sector Erase Operation Timings

February 5, 2003

Am29SL400C

33

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

t_RC

VA

t_ACC

t_CE

Addresses

VA

CE#

t_CH

t_OE

OE#

WE#

t_OEH

t_DF

t_OH

High Z

DQ7

Valid Data

Complement

True

DQ0–DQ6

Valid Data

Status Data

True

Status Data

t_BUSY

RY/BY#

Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.

Figure 18. Data# Polling Timings (During Embedded Algorithms)

t_RC

Addresses

CE#

VA

t_ACC

t_CE

VA

t_CH

t_OE

OE#

WE#

t_OEH

t_DF

t_OH

High Z

DQ6/DQ2

RY/BY#

Valid Status

(first read)

Valid Status

Valid Data

(second read)

(stops toggling)

t_BUSY

Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status

read cycle, and array data read cycle.

Figure 19. Toggle Bit Timings (During Embedded Algorithms)

34

Am29SL400C

February 5, 2003

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

Enter

Erase

Suspend

Enter Erase

Suspend Program

Embedded

Erase

Resume

Erasing

Erase

Erase Suspend

Read

Erase

Suspend

Program

Erase

Complete

WE#

Erase

Erase Suspend

Read

DQ6

DQ2

Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an

erase-suspended sector.

Figure 20. DQ2 vs. DQ6

Temporary Sector Unprotect

Parameter

JEDEC

Std

Description

V_IDRise and Fall Time

All Speed Options

Unit

t_VIDR

Min

500

ns

RESET# Setup Time for Temporary Sector

Unprotect

t_RSP

4

µs

10 V

RESET#

0 or 1.8 V

t_VIDR

Program or Erase Command Sequence

CE#

WE#

t_RSP

RY/BY#

Figure 21. Temporary Sector Unprotect Timing Diagram

February 5, 2003

Am29SL400C

35

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

V_ID

V_IH

RESET#

SA, A6,

A1, A0

Valid*

Sector Protect/Unprotect

60h 60h

Valid*

Status

Verify

40h

Data

Sector Protect: 150 µs

Sector Unprotect: 15 ms

1 µs

CE#

WE#

OE#

* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.

Figure 22. Sector Protect/Unprotect Timing Diagram

36

Am29SL400C

February 5, 2003

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

Alternate CE# Controlled Erase/Program Operations

Parameter

Speed Options

JEDEC

t_AVAV

Std

t_WC

t_AS

Description

-100R

-110

-120

-150

Unit

ns

Write Cycle Time (Note 1)

Address Setup Time

Address Hold Time

Data Setup Time

Min

100

110

120

150

t_AVEL

0

ns

t_ELAX

t_DVEH

t_EHDX

t_AH

50

55

60

70

ns

t_DS

ns

t_DH

t_OES

Data Hold Time

0

ns

Output Enable Setup Time

ns

Read Recovery Time Before Write

(OE# High to WE# Low)

t_GHEL

Min

0

ns

t_WLEL

t_EHWH

t_ELEH

t_EHEL

t_WS

t_WH

t_CP

WE# Setup Time

WE# Hold Time

Min

Typ

0

ns

CE# Pulse Width

CE# Pulse Width High

50

55

60

70

t_CPH

30

10

12

2

Byte

Programming Operation

(Notes 1, 2)

t_WHWH1t_WHWH1

µs

Word

t_WHWH2t_WHWH2Sector Erase Operation (Notes 1, 2)

sec

Notes:

1. Not 100% tested.

2. See the “Erase and Programming Performance” section

for more information.

February 5, 2003

Am29SL400C

37

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

555 for program

2AA for erase

PA for program

SA for sector erase

555 for chip erase

Data# Polling

Addresses

PA

t_WC

t_WH

t_AS

t_AH

WE#

OE#

t_GHEL

t_{WHWH1 or 2}

t_CP

CE#

Data

t_WS

t_CPH

t_DS

t_BUSY

t_DH

DQ7#

D_OUT

t_RH

A0 for program

55 for erase

PD for program

30 for sector erase

10 for chip erase

RESET#

RY/BY#

Notes:

1. PA = program address, PD = program data, DQ7# =

complement of the data written, D_OUT= data written

2. Figure indicates the last two bus cycles of command

sequence.

3. Word mode address used as an example.

Figure 23. Alternate CE# Controlled Write Operation Timings

38

Am29SL400C

February 5, 2003

A D V A N C E I N F O R M A T I O N

ERASE AND PROGRAMMING PERFORMANCE

Parameter

Typ (Note 1)

Max (Note 2)

Unit

s

Comments

Sector Erase Time

Chip Erase Time

2

38

10

12

5

15

Excludes 00h programming

prior to erasure (Note 4)

s

Byte Programming Time

Word Programming Time

300

360

40

µs

s

Excludes system level

overhead (Note 5)

Byte Mode

Word Mode

Chip Programming Time

(Note 3)

3.5

30

s

4. In the pre-programming step of the Embedded Erase algorithm,

all bytes are programmed to 00h before erasure.

Notes:

1. Typical program and erase times assume the following conditions:

25°C, 2.0 V V , 1,000,000 cycles. Additionally, programming

CC

5. System-level overhead is the time required to execute the two- or

four-bus-cycle sequence for the program command. See Table 5

for further information on command definitions.

typicals assume checkerboard pattern.

2. Under worst case conditions of 90°C, V = 1.8 V, 1,000,000

CC

cycles.

6. The device has a minimum guaranteed erase and program cycle

endurance of 1,000,000 cycles.

3. The typical chip programming time is considerably less than the

maximum chip programming time listed, since most bytes

program faster than the maximum program times listed.

LATCHUP CHARACTERISTICS

Description

Min

Max

Input voltage with respect to V_SSon all pins except I/O pins

(including A9, OE#, and RESET#)

–1.0 V

11.0 V

Input voltage with respect to V_SSon all I/O pins

V_CCCurrent

–0.5 V

V_CC+ 0.5 V

+100 mA

–100 mA

Includes all pins except V_CC. Test conditions: V_CC= 1.8 V, one pin at a time.

TSOP PIN AND BGA PACKAGE CAPACITANCE

Parameter Symbol

Parameter Description

Test Setup

Typ

6

Max

7.5

5.0

12

Unit

pF

TSOP

C_IN

Input Capacitance

V_IN= 0

V_OUT= 0

V_IN= 0

Fine-pitch BGA

TSOP

4.2

8.5

5.4

7.5

3.9

C_OUT

Output Capacitance

Fine-pitch BGA

TSOP

6.5

9

C_IN2

Control Pin Capacitance

Fine-pitch BGA

4.7

Notes:

1. Sampled, not 100% tested.

2. Test conditions T_A= 25°C, f = 1.0 MHz.

DATA RETENTION

Parameter

Test Conditions

150°C

Min

10

Unit

Years

Minimum Pattern Data Retention Time

125°C

20

February 5, 2003

Am29SL400C

39

A D V A N C E I N F O R M A T I O N

PHYSICAL DIMENSIONS

TS048—48-Pin Standard TSOP

Dwg rev AA; 10/99

40

Am29SL400C

February 5, 2003

A D V A N C E I N F O R M A T I O N

PHYSICAL DIMENSIONS

FBA048—48-Ball Fine-Pitch Ball Grid Array (FBGA) 6 x 8 mm Package

Dwg rev AF; 10/99

February 5, 2003

Am29SL400C

41

A D V A N C E I N F O R M A T I O N

REVISION SUMMARY

Revision A (August 14, 2002)

Revision A + 2 (February 5, 2003)

Initial Release.

Global

Changed fastest speed option from 103 ns to 100 ns,

regulated voltage, added 110 ns speed option standard

voltage.

Revision A+1 (August 28, 2002)

Sector Protection/Unprotection

Changed beginning of second paragraph from, “The

primary method....” to read, “Sector protection/unpro-

tection.”

General Description

Changed first sentenced to indicate 48-pin TSOP

package option.

Deleted third paragraph.

Command Definitions, Table 5

FBB048—48-Ball Fine-Pitch Ball Grid Array (FBGA)

6 x 8 mm package

Removed TBD markers from device ID, Top Boot Block

to 70h.

Changed number in row D in table from 9.00 mm to 8.0

mm.

Removed TBD markers from device ID, Bottom Boot

Block to FIh.

Changed address bits A18–A11 to A17–A11.

Physical Dimensions, 48-pin TSOP

Changed from Reverse to Standard TSOP package.

Trademarks

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

ExpressFlash is a trademark of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies

42

Am29SL400C

February 5, 2003

Representatives in U.S. and Canada

Sales Offices and Representatives

ARIZONA,

North America

Tempe - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(480)839-2320

CALIFORNIA,

ALABAMA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(256)830-9192

ARIZONA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(602)242-4400

CALIFORNIA,

Calabasas - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(818)878-5800

Irvine - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (949)261-2123

San Diego - Centaur. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(858)278-4950

Santa Clara - Fourfront. . . . . . . . . . . . . . . . . . . . . . . . . . . .(408)350-4800

CANADA,

Burnaby, B.C. - Davetek Marketing. . . . . . . . . . . . . . . . . . . .(604)430-3680

Calgary,Alberta - Davetek Marketing. . . . . . . . . . . . . . . . .(403)283-3577

Kanata, Ontario - J-Squared Tech. . . . . . . . . . . . . . . . . . . .(613)592-9540

Mississauga, Ontario - J-Squared Tech. . . . . . . . . . . . . . . . . .(905)672-2030

St Laurent, Quebec - J-Squared Tech. . . . . . . . . . . . . . . . ( 5 1 4 ) 74 7 - 1 2 1 1

COLORADO,

Irvine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(949)450-7500

Sunnyvale . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(408)732-2400

COLORADO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(303)741-2900

CONNECTICUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(203)264-7800

FLORIDA,

Clearwater . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(727)793-0055

Miami (Lakes) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 0 5 ) 8 2 0 - 1 1 1 3

GEORGIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(770)814-0224

ILLINOIS,

Chicago . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(630)773-4422

MASSACHUSETTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (781)213-6400

MICHIGAN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(248)471-6294

MINNESOTA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(612)745-0005

NEW JERSEY,

Chatham . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 97 3 ) 7 0 1 - 1 7 7 7

NEWYORK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(716)425-8050

NORTH CAROLINA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(919)840-8080

OREGON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(503)245-0080

PENNSYLVANIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 1 5 ) 3 4 0 - 1 1 8 7

SOUTH DAKOTA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(605)692-5777

TEXAS,

Golden - Compass Marketing . . . . . . . . . . . . . . . . . . . . . .(303)277-0456

FLORIDA,

Melbourne - Marathon Technical Sales . . . . . . . . . . . . . . . .(321)728-7706

Ft. Lauderdale - Marathon Technical Sales . . . . . . . . . . . . . .(954)527-4949

Orlando - Marathon Technical Sales . . . . . . . . . . . . . . . . . .(407)872-5775

St. Petersburg - Marathon Technical Sales . . . . . . . . . . . . . .(727)894-3603

GEORGIA,

Duluth - Quantum Marketing . . . . . . . . . . . . . . . . . . . . . (678)584-1128

ILLINOIS,

Skokie - Industrial Reps, Inc. . . . . . . . . . . . . . . . . . . . . . . . .(847)967-8430

INDIANA,

Kokomo - SAI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (765)457-7241

IOWA,

Cedar Rapids - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . (319)294-1000

KANSAS,

Lenexa - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 1 3 ) 4 69 - 1 3 1 2

MASSACHUSETTS,

Austin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(512)346-7830

Dallas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(972)985-1344

Houston . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(281)376-8084

VIRGINIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(703)736-9568

Burlington - Synergy Associates . . . . . . . . . . . . . . . . . . . . .(781)238-0870

MICHIGAN,

Brighton - SAI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(810)227-0007

MINNESOTA,

St. Paul - Cahill, Schmitz & Cahill, Inc. . . . . . . . . . . . . . . . . .(651)699-0200

MISSOURI,

St. Louis - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . . . . . (314)997-4558

NEW JERSEY,

International

AUSTRALIA, North Ryde . . . . . . . . . . . . . . . . . . . . . . .TEL(61)2-88-777-222

BELGIUM,Antwerpen . . . . . . . . . . . . . . . . . . . . . . . .TEL(32)3-248-43-00

BRAZIL, San Paulo . . . . . . . . . . . . . . . . . . . . . . . . . . TEL(55)11-5501-2105

CHINA,

Beijing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(86)10-6510-2188

Shanghai . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(86)21-635-00838

Shenzhen . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(86)755-246-1550

FINLAND, Helsinki . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 5 8 ) 8 8 1 - 3 1 1 7

FRANCE, Paris . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 3 ) - 1 - 4 975 1 0 1 0

GERMANY,

Bad Homburg . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(49)-6172-92670

Munich . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 9 ) - 8 9 - 4 5 0 5 3 0

HONG KONG, Causeway Bay . . . . . . . . . . . . . . . . . . .TEL(85)2-2956-0388

ITALY, Milan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 9 ) - 0 2 - 3 8 1 9 6 1

INDIA, New Delhi . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 9 1 ) 1 1 - 62 3 - 8 62 0

JAPAN,

es

Mt. Laurel - SJ Associates . . . . . . . . . . . . . . . . . . . . . . . . .(856)866-1234

NEWYORK,

Buffalo - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 74 1 - 7 1 1 6

East Syracuse - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . (315) 437-8343

Pittsford - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . .(716)586-3660

Rockville Centre - SJ Associates . . . . . . . . . . . . . . . . . . . . (516)536-4242

NORTH CAROLINA,

Raleigh - Quantum Marketing . . . . . . . . . . . . . . . . . . . . . .(919)846-5728

OHIO,

Middleburg Hts - Dolfuss Root & Co. . . . . . . . . . . . . . . . .(440)816-1660

Powell - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . . . . . (614)781-0725

Vandalia - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . . . .(937)898-9610

Westerville - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . (614)523 -1990

OREGON,

Lake Oswego - I Squared, Inc. . . . . . . . . . . . . . . . . . . . . . .(503)670-0557

UTAH,

Murray - Front Range Marketing . . . . . . . . . . . . . . . . . . . .(801)288-2500

VIRGINIA,

Osaka . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(81)6-6243-3250

Tokyo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(81)3-3346-7600

KOREA, Seoul . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(82)2-3468-2600

RUSSIA, Moscow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(7)-095-795-06-22

SWEDEN, Stockholm . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(46)8-562-540-00

TAIWAN,Taipei . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(886)2-8773-1555

UNITED KINGDOM,

Frimley . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(44)1276-803100

Haydcock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(44)1942-272888

Glen Burnie - Coherent Solution, Inc. . . . . . . . . . . . . . . . . ( 4 1 0 ) 76 1 - 2 2 5 5

WASHINGTON,

Kirkland - I Squared, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . .(425)822-9220

WISCONSIN,

Pewaukee - Industrial Representatives . . . . . . . . . . . . . . . .(262)574-9393

Advanced Micro Devices reserves the right to make changes in its product without notice

in order to improve design or performance characteristics.The performance

characteristics listed in this document are guaranteed by specific tests, guard banding,

design and other practices common to the industry. For specific testing details, contact

your local AMD sales representative.The company assumes no responsibility for the use of

any circuits described herein.

Representatives in Latin America

ARGENTINA,

Capital Federal Argentina/WW Rep. . . . . . . . . . . . . . . . . . . .54-11)4373-0655

CHILE,

Santiago - LatinRep/WWRep. . . . . . . . . . . . . . . . . . . . . . . . . .(+562)264-0993

COLUMBIA,

Bogota - Dimser. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 7 1 ) 4 1 0 - 4 1 8 2

MEXICO,

Guadalajara - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . .(523)817-3900

Mexico City - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . .(525)752-2727

Monterrey - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . .(528)369-6828

PUERTO RICO,

AMD, the AMD Arrow logo and combination thereof, are trademarks of

Advanced Micro Devices, Inc. Other product names are for informational purposes only

and may be trademarks of their respective companies.

Boqueron - Infitronics. . . . . . . . . . . . . . . . . . . . . . . . . . . .(787)851-6000

One AMD Place, P.O. Box 3453, Sunnyvale, CA 94088-3453 408-732-2400

TWX 910-339-9280 TELEX 34-6306 800-538-8450 http://www.amd.com

01/03

Printed in USA


型号：	AM29SL400CB-120WBC
厂家：	SPANSION
描述：	Flash, 256KX16, 120ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, FBGA-48
文件：	总43页 (文件大小：853K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AM29SL400CB-120WBC [SPANSION]

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