S29AL032D70TAE002 [SPANSION]
32 Megabit CMOS 3.0 Volt-only Flash Memory; 32兆位CMOS 3.0伏只快闪记忆体型号: | S29AL032D70TAE002 |
厂家: | SPANSION |
描述: | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
文件: | 总69页 (文件大小:1731K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
S29AL032D
32 Megabit CMOS 3.0 Volt-only Flash Memory
4 M x 8-Bit Uniform Sector
4 M x 8-Bit/2 M x 16-Bit Boot Sector
ADVANCE
INFORMATION
Data Sheet
Notice to Readers: The Advance Information status indicates that this
document contains information on one or more products under development
at Spansion LLC. The information is intended to help you evaluate this product.
Do not design in this product without contacting the factory. Spansion LLC
reserves the right to change or discontinue work on this proposed product
without notice.
Publication Number S29AL032D_00 Revision A Amendment 3 Issue Date June 13, 2005
A d v a n c e I n f o r m a t i o n
Notice On Data Sheet Designations
Spansion LLC issues data sheets with Advance Information or Preliminary designations to advise
readers of product information or intended specifications throughout the product life cycle, in-
cluding development, qualification, initial production, and full production. In all cases, however,
readers are encouraged to verify that they have the latest information before finalizing their de-
sign. The following descriptions of Spansion data sheet designations are presented here to high-
light their presence and definitions.
Advance Information
The Advance Information designation indicates that Spansion LLC is developing one or more spe-
cific products, but has not committed any design to production. Information presented in a doc-
ument with this designation is likely to change, and in some cases, development on the product
may discontinue. Spansion LLC therefore places the following conditions upon Advance Informa-
tion content:
“This document contains information on one or more products under development at Spansion LLC. The
information is intended to help you evaluate this product. Do not design in this product without con-
tacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed
product without notice.”
Preliminary
The Preliminary designation indicates that the product development has progressed such that a
commitment to production has taken place. This designation covers several aspects of the prod-
uct life cycle, including product qualification, initial production, and the subsequent phases in the
manufacturing process that occur before full production is achieved. Changes to the technical
specifications presented in a Preliminary document should be expected while keeping these as-
pects of production under consideration. Spansion places the following conditions upon Prelimi-
nary content:
“This document states the current technical specifications regarding the Spansion product(s) described
herein. The Preliminary status of this document indicates that product qualification has been completed,
and that initial production has begun. Due to the phases of the manufacturing process that require
maintaining efficiency and quality, this document may be revised by subsequent versions or modifica-
tions due to changes in technical specifications.”
Combination
Some data sheets will contain a combination of products with different designations (Advance In-
formation, Preliminary, or Full Production). This type of document will distinguish these products
and their designations wherever necessary, typically on the first page, the ordering information
page, and pages with DC Characteristics table and AC Erase and Program table (in the table
notes). The disclaimer on the first page refers the reader to the notice on this page.
Full Production (No Designation on Document)
When a product has been in production for a period of time such that no changes or only nominal
changes are expected, the Preliminary designation is removed from the data sheet. Nominal
changes may include those affecting the number of ordering part numbers available, such as the
addition or deletion of a speed option, temperature range, package type, or VIO range. Changes
may also include those needed to clarify a description or to correct a typographical error or incor-
rect specification. Spansion LLC applies the following conditions to documents in this category:
“This document states the current technical specifications regarding the Spansion product(s) described
herein. Spansion LLC deems the products to have been in sufficient production volume such that sub-
sequent versions of this document are not expected to change. However, typographical or specification
corrections, or modifications to the valid combinations offered may occur.”
Questions regarding these document designations may be directed to your local AMD or Fujitsu
sales office.
ii
S29AL032D
S29AL032D_00_A3 June 13, 2005
S29AL032D
32 Megabit CMOS 3.0 Volt-only Flash Memory
4 M x 8-Bit Uniform Sector
4 M x 8-Bit/2 M x 16-Bit Boot Sector
ADVANCE
INFORMATION
Data Sheet
Distinctive Characteristics
Ultra low power consumption (typical values
at 5 MHz)
Architectural Advantages
Single power supply operation
—
—
—
—
200 nA Automatic Sleep mode current
200 nA standby mode current
9 mA read current
—
Full voltage range: 2.7 to 3.6 volt read and write op-
erations for battery-powered applications
Manufactured on 200 nm process technology
20 mA program/erase current
—
Fully compatible with 0.23 µm Am29LV320D, 0.32 µm
Am29LV033C, and 0.33 µm MBM29LV320E devices
Cycling endurance: 1,000,000 cycles per
sector typical
Data retention: 20 years typical
Flexible sector architecture
—
Boot sector models: Eight 8-Kbyte sectors; sixty-
three 64-Kbyte sectors; top or bottom boot block
configurations available
Software Features
CFI (Common Flash Interface) compliant
—
Uniform sector models: Sixty-four 64-Kbyte sectors
—
Provides device-specific information to the system,
allowing host software to easily reconfigure for
different Flash devices
Sector Protection features
—
—
—
A hardware method of locking a sector to prevent any
program or erase operations within that sector
Sectors can be locked in-system or via programming
equipment
Erase Suspend/Erase Resume
—
Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Data# Polling and toggle bits
Unlock Bypass Program Command
—
—
Provides a software method of detecting program or
erase operation completion
Reduces overall programming time when issuing
multiple program command sequences
—
Unlock Bypass Program Command
Secured Silicon Sector
Reduces overall programming time when issuing
multiple program command sequences
—
—
—
128-word sector for permanent, secure identification
through an 8-word random Electronic Serial Number
May be programmed and locked at the factory or by
the customer
Hardware Features
Ready/Busy# pin (RY/BY#)
Accessible through a command sequence
—
Provides a hardware method of detecting program or
erase cycle completion
Compatibility with JEDEC standards
—
Hardware reset pin (RESET#)
Pinout and software compatible with single-power
supply Flash
—
Hardware method to reset the device to reading array
data
—
Superior inadvertent write protection
WP#/ACC input pin
Package Options
—
Write protect (WP#) function allows protection of two
outermost boot sectors (boot sector models only),
regardless of sector protect status
48-ball FBGA
48-pin TSOP
40-pin TSOP
—
Acceleration (ACC) function provides accelerated
program times
Performance Characteristics
High performance
Access times as fast as 70 ns
—
Publication Number S29AL032D_00 Revision A Amendment 3 Issue Date June 13, 2005
This document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not
design in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice.
A d v a n c e I n f o r m a t i o n
General Description
The S29AL032D is a 32 megabit, 3.0 volt-only flash memory device, organized as 2,097,152
words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on DQ0-DQ15;
byte mode data appears on DQ0-DQ7. The device is designed to be programmed in-system with
the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers.
The device is available with access times as fast as 70 ns. The devices are offered in 40-pin TSOP,
48-pin TSOP and 48-ball FBGA packages. Standard control pins- chip enable (CE#), write enable
(WE#), and output enable (OE#)-control normal read and write operations, and avoid bus con-
tention issues.
The device requires only a single 3.0 volt power supply for both read and write functions. In-
ternally generated and regulated voltages are provided for the pro-gram and erase operations.
S29AL032D Features
The Secured Silicon Sector is an extra sector capable of being permanently locked by Spansion
or customers. The Secured Silicon Indicator Bit (DQ7) is permanently set to a 1 if the part is
factory locked, and set to a 0 if customer lockable. This way, customer lockable parts can never
be used to replace a factory locked part. Note that the S29AL032D has a Secured Silicon
Sector size of 128 words (256 bytes).
Factory locked parts provide several options. The Secured Silicon Sector may store a secure, ran-
dom 16 byte ESN (Electronic Serial Number), customer code (programmed through the Spansion
programming service), or both.
The S29AL032D is entirely command set compatible with the JEDEC single-power-supply
Flash standard. Commands are written to the command register using standard microprocessor
write timings. Register contents serve as input to an internal state-machine that controls the
erase and programming circuitry. Write cycles also internally latch addresses and data needed for
the programming and erase operations. Reading data out of the device is similar to reading from
other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. This initiates the Em-
bedded Program algorithm—an internal algorithm that automatically times the program pulse
widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming
times by requiring only two write cycles to program data instead of four.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded
Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not al-
ready programmed) before executing the erase operation. During erase, the device automatically
times the erase pulse widths and verifies proper cell margin.
The host system can detect whether a program or erase operation is complete by observing the
RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a pro-
gram or erase cycle has been completed, the device is ready to read array data or accept another
command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without
affecting the data contents of other sectors. The device is fully erased when shipped from the
factory.
Hardware data protection measures include a low V detector that automatically inhibits write
CC
operations during power transitions. The hardware sector protection feature disables both
program and erase operations in any combination of the sectors of memory. This can be achieved
in-system or via programming equipment.
2
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period
of time to read data from, or program data to, any sector that is not selected for erasure. True
background erase can thus be achieved.
The hardware RESET# pin terminates any operation in progress and resets the internal state
machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A sys-
tem reset would thus also reset the device, enabling the system microprocessor to read the
boot-up firmware from the Flash memory.
The device offers two power-saving features. When addresses have been stable for a specified
amount of time, the device enters the automatic sleep mode. The system can also place the
device into the standby mode. Power consumption is greatly reduced in both these modes.
The Spansion Flash technology combines years of Flash memory manufacturing experience to
produce the highest levels of quality, reliability and cost effectiveness. The device electrically
erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is
programmed using hot electron injection.
June 13, 2005 S29AL032D_00_A3
S29AL032D
3
A d v a n c e I n f o r m a t i o n
Table of Contents
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 6
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Ordering Information . . . . . . . . . . . . . . . . . . . . . . .10
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 11
Table 1. S29AL032D Device Bus Operations . . . . . . . . . . . . . . . . . . . . . .11
Word/Byte Configuration (Models 03, 04 Only) . . . . . . . . . . .11
Requirements for Reading Array Data . . . . . . . . . . . . . . . . . . .11
Writing Commands/Command Sequences . . . . . . . . . . . . . . . 12
Program and Erase Operation Status . . . . . . . . . . . . . . . . . . . 12
Accelerated Program Operation . . . . . . . . . . . . . . . . . . . . . . . 12
Standby Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Automatic Sleep Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
RESET#: Hardware Reset Pin . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Output Disable Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 2. Model 00 Sector Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 3. Model 00 Secured Silicon Sector Addresses . . . . . . . . . . . . . . 15
Table 4. Model 03 Sector Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 5. Model 03 Secured Silicon Sector Addresses . . . . . . . . . . . . . . 17
Table 6. Model 04 Sector Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 7. Model 04 Secured Silicon Sector Addresses . . . . . . . . . . . . . . 19
Autoselect Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Table 8. S29AL032D Autoselect Codes (High Voltage Method) . . . . .20
Sector Protection/Unprotection . . . . . . . . . . . . . . . . . . . . . . . 20
Table 9. Sector Block Addresses for Protection/Unprotection
Erase Suspend/Erase Resume Commands . . . . . . . . . . . . . . . .35
Figure 5. Erase Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Command Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37
Table 16. S29AL032D Command Definitions — Model 00 . . . . . . . . . . 37
Table 17. S29AL032D Command Definitions — Models 03, 04 . . . . . . 38
Write Operation Status. . . . . . . . . . . . . . . . . . . . . 39
DQ7: Data# Polling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39
Figure 6. Data# Polling Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
RY/BY#: Ready/Busy# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
DQ6: Toggle Bit I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
DQ2: Toggle Bit II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Reading Toggle Bits DQ6/DQ2 . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 7. Toggle Bit Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
DQ5: Exceeded Timing Limits . . . . . . . . . . . . . . . . . . . . . . . . . .43
DQ3: Sector Erase Timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 18. Write Operation Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . 45
Figure 8. Maximum Negative Overshoot Waveform . . . . . . . . . . . . . . 45
Figure 9. Maximum Positive Overshoot Waveform . . . . . . . . . . . . . . . 45
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . . 45
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 10. I
Current vs. Time (Showing Active and
CC1
Automatic Sleep Currents). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Figure 11. Typical I vs. Frequency. . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
CC1
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 12. Test Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Table 19. Test Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 13. Input Waveforms and Measurement Levels . . . . . . . . . . . . . 49
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 50
Read Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Figure 14. Read Operations Timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Hardware Reset (RESET#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 15. RESET# Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 16. BYTE# Timings for Read Operations . . . . . . . . . . . . . . . . . . 52
Figure 17. BYTE# Timings for Write Operations . . . . . . . . . . . . . . . . . . 53
Erase/Program Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 18. Program Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . 55
Figure 19. Chip/Sector Erase Operation Timings. . . . . . . . . . . . . . . . . . 56
Figure 20. Back to Back Read/Write Cycle Timing. . . . . . . . . . . . . . . . 56
Figure 21. Data# Polling Timings (During Embedded Algorithms) . . . . 57
Figure 22. Toggle Bit Timings (During Embedded Algorithms) . . . . . . 57
Figure 23. DQ2 vs. DQ6 for Erase and Erase Suspend Operations. . . 58
Figure 24. Temporary Sector Unprotect/Timing Diagram . . . . . . . . . . 58
Figure 25. Accelerated Program Timing Diagram . . . . . . . . . . . . . . . . . 59
Figure 26. Sector Protect/Unprotect Timing Diagram . . . . . . . . . . . . . 59
Figure 27. Alternate CE# Controlled Write Operation Timings. . . . . . 61
Erase and Programming Performance . . . . . . . . 62
TSOP and BGA Pin Capacitance . . . . . . . . . . . . . 62
Physical Dimensions. . . . . . . . . . . . . . . . . . . . . . . . 63
TS040—40-Pin Standard TSOP . . . . . . . . . . . . . . . . . . . . . . . .63
TS 048—48-Pin Standard TSOP . . . . . . . . . . . . . . . . . . . . . . . 64
VBN048—48-Ball Fine-Pitch Ball Grid Array (FBGA)
— Model 00 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 10. Sector Block Addresses for Protection/Unprotection
— Model 03 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 11. Sector Block Addresses for Protection/Unprotection
— Model 04 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Write Protect (WP#) — Models 03, 04 Only . . . . . . . . . . . . 23
Temporary Sector Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 1. Temporary Sector Unprotect Operation . . . . . . . . . . . . . . . . 24
Figure 2. In-System Sector Protect/Unprotect Algorithms. . . . . . . . . . 25
Secured Silicon Sector Flash Memory Region . . . . . . . . . . . . . 26
Figure 3. Secured Silicon Sector Protect Verify. . . . . . . . . . . . . . . . . . . 27
Hardware Data Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Common Flash Memory Interface (CFI). . . . . . . 28
Table 12. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . .28
Table 13. System Interface String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
Table 14. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 15. Primary Vendor-Specific Extended Query . . . . . . . . . . . . . . . 30
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 31
Reading Array Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Reset Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Autoselect Command Sequence . . . . . . . . . . . . . . . . . . . . . . . 32
Enter Secured SiliconSector/Exit Secured Silicon Sector
Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Word/Byte Program Command Sequence . . . . . . . . . . . . . . . 32
Figure 4. Program Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Chip Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . . 34
Sector Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . 35
10.0 x 6.0 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . . 66
4
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
Product Selector Guide
Family Part Number
S29AL032D
Speed Option
Voltage Range: VCC = 2.7–3.6 V
70
70
70
30
90
90
90
35
Max access time, ns (tACC
)
Max CE# access time, ns (tCE
)
Max OE# access time, ns (tOE
)
Note: See AC Characteristics on page 50 for full specifications.
Block Diagram
DQ0–DQ15 (A-1), (DQ0-DQ7 Model 00)
RY/BY#
VCC
Sector Switches
VSS
Erase Voltage
Generator
Input/Output
Buffers
RESET#
State
Control
WE#
BYTE#
Command
Register
PGM Voltage
Generator
Data
Latch
Chip Enable
Output Enable
Logic
STB
CE#
OE#
Y-Decoder
X-Decoder
Y-Gating
STB
VCC Detector
Timer
Cell Matrix
A0–A20 (A0-A21 Model 00)
June 13, 2005 S29AL032D_00_A3
S29AL032D
5
A d v a n c e I n f o r m a t i o n
Connection Diagrams
A17
VSS
A16
A15
A14
A13
A12
A11
A9
1
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
2
3
A20
A19
A10
DQ7
DQ6
DQ5
DQ4
VCC
4
5
6
7
A8
8
WE#
RESET#
ACC
RY/BY#
A18
A7
9
10
11
12
13
14
15
16
17
18
19
20
40-pin Standard TSOP
VCC
A21
DQ3
DQ2
DQ1
DQ0
A6
A5
A4
OE#
VSS
A3
A2
CE#
A0
A1
A15
1
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
2
BYTE#
A14
A13
A12
A11
A10
A9
VSS
DQ15/A-1
DQ7
3
4
5
6
DQ14
DQ6
7
A8
8
DQ13
DQ5
A19
A20
WE#
RESET#
NC
9
48-pin Standard TSOP
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
OE#
VSS
A3
A2
CE#
A0
A1
6
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
Connection Diagrams
For Model 00 Only
48-ball FBGA Top view balls facing down
A6
B6
C6
D6
E6
F6
G6
H6
VSS
A14
A13
A15
A16
A17
NC
A20
A5
A9
B5
A8
C5
D5
E5
F5
G5
H5
A11
A12
A19
A10
DQ6
DQ7
A4
B4
C4
D4
E4
F4
G4
H4
VCC
WE# RESET#
NC
NC
DQ5
NC
DQ4
A3
B3
C3
D3
E3
F3
G3
H3
RY/BY#
ACC
NC
NC
DQ2
DQ3
VCC
A21
A2
A7
B2
C2
A6
D2
A5
E2
F2
G2
NC
H2
A18
DQ0
NC
DQ1
A1
A3
B1
A4
C1
A2
D1
A1
E1
A0
F1
G1
H1
VSS
CE#
OE#
June 13, 2005 S29AL032D_00_A3
S29AL032D
7
A d v a n c e I n f o r m a t i o n
For Models 03, 04 Only
48-ball FBGA Top view balls facing down
A6
B6
C6
D6
E6
F6
G6
H6
VSS
A13
A12
A14
A15
A16
BYTE# DQ15/A-1
A5
A9
B5
A8
C5
D5
E5
F5
G5
H5
A10
A11
DQ7
DQ14
DQ13
DQ6
A4
B4
C4
D4
E4
F4
G4
H4
VCC
WE# RESET#
NC
A19
DQ5
DQ12
DQ4
A3 B3
C3
D3
E3
F3
G3
H3
RY/BY# WP#/ACC A18
A20
DQ2
DQ10
DQ11
DQ3
A2
A7
B2
C2
A6
D2
A5
E2
F2
G2
H2
A17
DQ0
DQ8
DQ9
DQ1
A1
A3
B1
A4
C1
A2
D1
A1
E1
A0
F1
G1
H1
VSS
CE#
OE#
Special Handling Instructions
Special handling is required for Flash Memory products in FBGA packages.
Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning meth-
ods. The package and/or data integrity may be compromised if the package body is exposed to
temperatures above 150°C for prolonged periods of time.
8
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
Pin Configuration
A0–A21
=
=
=
=
=
22 address inputs
A0-A20
21 address inputs
DQ0–DQ7
DQ0-DQ14
DQ15/A-1
8 data inputs/outputs
15 data inputs/outputs
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
BYTE#
CE#
=
=
=
=
=
=
Selects 8-bit or 16-bit mode
Chip enable
OE#
Output enable
WE#
Write enable
RESET#
WP#/ACC
Hardware reset pin
Hardware Write Protect input/Programming
Acceleration input.
ACC
=
=
=
Hardware Write Protect input
Ready/Busy output
RY/BY#
V
3.0 volt-only single power supply
CC
see Product Selector Guide on page 5 for speed
options and voltage supply tolerances)
V
=
=
Device ground
SS
NC
Pin not connected internally
Logic Symbol
Model 00
Models 03, 04
21
22
A0–A20
8
A0–A21
16 or 8
DQ0–DQ15
(A-1)
DQ0–DQ7
CE#
OE#
CE#
OE#
WE#
WE#
RESET#
RESET#
ACC
WP#/ACC
BYTE#
RY/BY#
RY/BY#
June 13, 2005 S29AL032D_00_A3
S29AL032D
9
A d v a n c e I n f o r m a t i o n
Ordering Information
S29AL032D Standard Products
Spansion standard products are available in several packages and operating
ranges. The order number (Valid Combination) is formed by a combination of the
elements below.
S29AL032D
70
T
A
I
00
0
PACKING TYPE
0
2
3
=
=
=
Tray
7” Tape and Reel
13” Tape and Reel
MODEL NUMBER
00
03
=
=
x8, VCC = 2.7 V to 3.6 V, Uniform sector device
x8/x16, VCC = 2.7 V to 3.6 V, Top boot sector device, top two address
sectors protected when WP#/ACC = VIL
04
=
x8/x16, VCC = 2.7 V to 3.6 V, Bottom boot sector device, bottom two
address sectors protected when WP#/ACC = VIL
TEMPERATURE RANGE
I
E
=
=
Industrial (–40
°
C to +85
°
C)
Engineering Samples (available prior to Production Release only)
PACKAGE MATERIAL SET
A
F
=
=
Standard
Pb-Free
PACKAGE TYPE
T
B
=
=
Thin Small Outline Package (TSOP) Standard Pinout
Fine-pitch Ball-Grid Array Package
SPEED OPTION
See “Product Selector Guide” and Valid Combinations
DEVICE NUMBER/DESCRIPTION
S29AL032D
3.0 Volt-only, 32 Megabit Standard Flash Memory
manufactured using 200 nm process technology
S29AL032D Valid Combinations
Package Type,
Package Description
Speed
Option
Model
Number
Device Number
Material, and
Temperature Range
Packing Type
00
TS040 (Note 2)
TSOP
TSOP
TAI, TFI
BAI, BFI
0, 3 (Note 1)
S29AL032D
70, 90
03, 04
TS048 (Note 2)
00, 03, 04
0, 2, 3 (Note 1)
VBN048 (Note 3)
Fine-Pitch BGA
Notes:
1. Type 0 is standard. Specify other options as required.
2. TSOP package marking omits packing type designator from ordering part number.
3. BGA package marking omits leading S29 and packing type designator from ordering part number.
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult your
local sales office to confirm availability of specific valid combinations and to check on newly released
combinations.
10
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated
through the internal command register. The command register itself does not occupy any addres-
sable memory location. The register is composed of latches that store the commands, along with
the address and data information needed to execute the command. The contents of the register
serve as inputs to the internal state machine. The state machine outputs dictate the function of
the device. Table 1 lists the device bus operations, the inputs and control levels they require, and
the resulting output. The following subsections describe each of these operations in further detail.
Table 1. S29AL032D Device Bus Operations
DQ8–DQ15 (Note 6)
WP#(Note 6)/
ACC
Addresses
(Note 3)
DQ0–
DQ7
Operation
CE#
OE# WE# RESET#
BYTE#
= V
BYTE# = V
IL
IH
OUT
Read
L
L
L
H
L
H
H
L/H
A
A
D
D
IN
OUT
DQ8–DQ14 =
High-Z, DQ15 =
A-1
Write (Note 1)
H
(Note 4)
(Note 5) (Note 5)
IN
Accelerated Program
(Note 6)
L
H
X
L
H
V
A
(Note 5) (Note 5)
HH
IN
V
V
CC
0.3 V
CC
0.3 V
Standby
X
H
X
High-Z
High-Z
High-Z
Output Disable
Reset
L
H
X
H
X
H
L
L/H
L/H
X
X
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
X
SA, A6 = L,
A1 = H, A0 = L
Sector Protect (Note 3)
L
L
H
H
X
L
L
V
V
V
L/H
(Note 5)
(Note 5)
X
X
X
X
ID
ID
ID
Sector Unprotect
(Note 3)
SA, A6 = H,
A1 = H, A0 = L
(Note 4)
(Note 4)
Temporary Sector
Unprotect
X
X
A
(Note 5) (Note 5)
High-Z
IN
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT
= Data Out
Notes:
1. When the ACC pin is at VHH, the device enters the accelerated program mode. See
2. Addresses are A20:A0 in word mode (BYTE# = VIH), A20:A-1 in byte mode (BYTE# = VIL).
3. The sector protect and sector unprotect functions may also be implemented via programming equipment.
4. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, the two outermost boot sector
protection depends on whether they were last protected or unprotected. If WP#/ACC = VHH, all sectors are unprotected.
5. DIN or DOUT as required by command sequence, data polling, or sector protection algorithm.
6. Models 03, 04 only
Word/Byte Configuration (Models 03, 04 Only)
The BYTE# pin controls whether the device data I/O pins DQ15–DQ0 operate in the byte or word
configuration. If the BYTE# pin is set at logic 1, the device is in word configuration, DQ15–DQ0
are active and controlled by CE# and OE#.
If the BYTE# pin is set at logic 0, the device is in byte configuration, and only data I/O pins DQ0–
DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8–DQ14 are tri-stated, and
the DQ15 pin is used as an input for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must drive the CE# and OE# pins to V . CE# is
IL
the power control and selects the device. OE# is the output control and gates array data to the
output pins. WE# should remain at V . The BYTE# pin determines whether the device outputs
IH
array data in words or bytes.
June 13, 2005 S29AL032D_00_A3
S29AL032D
11
A d v a n c e I n f o r m a t i o n
The internal state machine is set for reading array data upon device power-up, or after a hardware
reset. This ensures that no spurious alteration of the memory content occurs during the power
transition. No command is necessary in this mode to obtain array data. Standard microprocessor
read cycles that assert valid addresses on the device address inputs produce valid data on the
device data outputs. The device remains enabled for read access until the command register con-
tents are altered.
See Reading Array Data on page 31 for more information. Refer to the AC Read Operations on
page 50 table for timing specifications and to Figure 14, on page 50 for the timing diagram. I
CC1
in the DC Characteristics table represents the active current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and
erasing sectors of memory), the system must drive WE# and CE# to V , and OE# to V
.
IH
IL
For program operations, the BYTE# pin determines whether the device accepts program data in
bytes or words. Refer to Word/Byte Configuration (Models 03, 04 Only) on page 11 for more
information.
The device features an Unlock Bypass mode to facilitate faster programming. Once the device
enters the Unlock Bypass mode, only two write cycles are required to program a word or byte,
instead of four. The Word/Byte Program Command Sequence on page 32 section has details on
programming data to the device using both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 2 on page 14
and Table 4 on page 16 indicate the address space that each sector occupies. A sector address
consists of the address bits required to uniquely select a sector. The Command Definitions on
page 31 contains details on erasing a sector or the entire chip, or suspending/resuming the erase
operation.
After the system writes the autoselect command sequence, the device enters the autoselect
mode. The system can then read autoselect codes from the internal register (which is separate
from the memory array) on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to
Autoselect Mode on page 20 and Autoselect Command Sequence on page 32 for more
information.
I
in the DC Characteristics table represents the active current specification for the write mode.
CC2
AC Characteristics on page 50 contains timing specification tables and timing diagrams for write
operations.
Program and Erase Operation Status
During an erase or program operation, the system may check the status of the operation by read-
ing the status bits on DQ7–DQ0. Standard read cycle timings and I read specifications apply.
CC
Refer to Write Operation Status on page 39 for more information, and to AC Characteristics on
page 50 for timing diagrams.
Accelerated Program Operation
The device offers accelerated program operations through the ACC function. This is one of two
functions provided by the WP#/ACC (ACC on Model 00) pin. This function is primarily intended to
allow faster manufacturing throughput at the factory.
If the system asserts V
on this pin, the device automatically enters the aforementioned Unlock
HH
Bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the
pin to reduce the time required for program operations. The system would use a two-cycle pro-
gram command sequence as required by the Unlock Bypass mode. Removing V from the WP#/
HH
ACC pin returns the device to normal operation. Note that the WP#/ACC pin must not be at V
HH
for operations other than accelerated programming, or device damage may result. In addition,
12
S29AL032D S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device
may result.
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby
mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the
high impedance state, independent of the OE# input.
The device enters the CMOS standby mode when the CE# and RESET# pins are both held at V
CC
0.3 V. (Note that this is a more restricted voltage range than V .) If CE# and RESET# are held
IH
at V , but not within V
0.3 V, the device will be in the standby mode, but the standby current
IH
CC
will be greater. The device requires standard access time (t ) for read access when the device is
CE
in either of these standby modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until
the operation is completed.
In the DC Characteristics table, I
and I
represents the standby current specification.
CC4
CC3
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically
enables this mode when addresses remain stable for t + 30 ns. The automatic sleep mode is
ACC
independent of the CE#, WE#, and OE# control signals. Standard address access timings provide
new data when addresses are changed. While in sleep mode, output data is latched and always
available to the system. I
in DC Characteristics on page 46 represents the automatic sleep
CC4
mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When
the system drives the RESET# pin to V for at least a period of t , the device immediately ter-
IL
RP
minates any operation in progress, tristates all data output pins, and ignores all read/write
attempts for the duration of the RESET# pulse. The device also resets the internal state machine
to reading array data. The operation that was interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held at V ±0.3 V, the
SS
device draws CMOS standby current (I
standby current will be greater.
). If RESET# is held at V but not within V ±0.3 V, the
IL SS
CC4
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset
the Flash memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a 0 (busy)
until the internal reset operation is complete, which requires a time of t
(during Embedded
READY
Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is
complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin
is 1), the reset operation is completed within a time of t
(not during Embedded Algorithms).
READY
The system can read data t
after the RESET# pin returns to V .
IH
RH
Refer to AC Characteristics on page 50 for RESET# parameters and to Figure 15, on page 51 for
the timing diagram.
Output Disable Mode
When the OE# input is at V , output from the device is disabled. The output pins are placed in
IH
the high impedance state.
June 13, 2005 S29AL032D_00_A3
S29AL032D
13
A d v a n c e I n f o r m a t i o n
Table 2. Model 00 Sector Addresses (Sheet 1 of 2)
Address Range
(in hexadecimal)
Sector
A21
A20
A19
A18
A17
A16
SA0
SA1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
000000–00FFFF
010000–01FFFF
020000–02FFFF
030000–03FFFF
040000–04FFFF
050000–05FFFF
060000–06FFFF
070000–07FFFF
080000–08FFFF
090000–09FFFF
0A0000–0AFFFF
0B0000–0BFFFF
0C0000–0CFFFF
0D0000–0DFFFF
0E0000–0EFFFF
0F0000–0FFFFF
100000–10FFFF
110000–11FFFF
120000–12FFFF
130000–13FFFF
140000–14FFFF
150000–15FFFF
160000–16FFFF
170000–17FFFF
180000–18FFFF
190000–19FFFF
1A0000–1AFFFF
1B0000–1BFFFF
1C0000–1CFFFF
1D0000–1DFFFF
1E0000–1EFFFF
1F0000–1FFFFF
200000–20FFFF
210000–21FFFF
220000–22FFFF
230000–23FFFF
240000–24FFFF
250000–25FFFF
260000–26FFFF
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
14
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
Table 2. Model 00 Sector Addresses (Sheet 2 of 2)
Address Range
(in hexadecimal)
Sector
A21
A20
A19
A18
A17
A16
SA39
SA40
SA41
SA42
SA43
SA44
SA45
SA46
SA47
SA48
SA49
SA50
SA51
SA52
SA53
SA54
SA55
SA56
SA57
SA58
SA59
SA60
SA61
SA62
SA63
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
270000–27FFFF
280000–28FFFF
290000–29FFFF
2A0000–2AFFFF
2B0000–2BFFFF
2C0000–2CFFFF
2D0000–2DFFFF
2E0000–2EFFFF
2F0000–2FFFFF
300000–30FFFF
310000–31FFFF
320000–32FFFF
330000–33FFFF
340000–34FFFF
350000–35FFFF
360000–36FFFF
370000–37FFFF
380000–38FFFF
390000–39FFFF
3A0000–3AFFFF
3B0000–3BFFFF
3C0000–3CFFFF
3D0000–3DFFFF
3E0000–3EFFFF
3F0000–3FFFFF
Notes:
1. All sectors are 64 Kbytes in size.
Table 3. Model 00 Secured Silicon Sector Addresses
Sector Address
A20–A12
Sector Size
(bytes/words)
(x8)
(x16)
Address Range
Address Range
111111111
256/128
3FFF00h–3FFFFFh
1FFF80h–1FFFFFh
June 13, 2005 S29AL032D_00_A3
S29AL032D
15
A d v a n c e I n f o r m a t i o n
Table 4. Model 03 Sector Addresses (Sheet 1 of 2)
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
(x16)
Address Range
Sector
SA0
Address Range
000000xxx
000001xxx
000010xxx
000011xxx
000100xxx
000101xxx
000110xxx
000111xxx
001000xxx
001001xxx
001010xxx
001011xxx
001100xxx
001101xxx
001110xxx
001111xxx
010000xxx
010001xxx
010010xxx
010011xxx
010100xxx
010101xxx
010110xxx
010111xxx
011000xxx
011001xxx
011010xxx
011011xxx
011100xxx
011101xxx
011110xxx
011111xxx
100000xxx
100001xxx
100010xxx
100011xxx
100100xxx
100101xxx
100110xxx
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
000000h–00FFFFh
010000h–01FFFFh
020000h–02FFFFh
030000h–03FFFFh
040000h–04FFFFh
050000h–05FFFFh
060000h–06FFFFh
070000h–07FFFFh
080000h–08FFFFh
090000h–09FFFFh
0A0000h–0AFFFFh
0B0000h–0BFFFFh
0C0000h–0CFFFFh
0D0000h–0DFFFFh
0E0000h–0EFFFFh
0F0000h–0FFFFFh
100000h–10FFFFh
110000h–11FFFFh
120000h–12FFFFh
130000h–13FFFFh
140000h–14FFFFh
150000h–15FFFFh
160000h–16FFFFh
170000h–17FFFFh
180000h–18FFFFh
190000h–19FFFFh
1A0000h–1AFFFFh
1B0000h–1BFFFFh
1C0000h–1CFFFFh
1D0000h–1DFFFFh
1E0000h–1EFFFFh
1F0000h–1FFFFFh
200000h–20FFFFh
210000h–21FFFFh
220000h–22FFFFh
230000h–23FFFFh
240000h–24FFFFh
250000h–25FFFFh
260000h–26FFFFh
000000h–07FFFh
008000h–0FFFFh
010000h–17FFFh
018000h–01FFFFh
020000h–027FFFh
028000h–02FFFFh
030000h–037FFFh
038000h–03FFFFh
040000h–047FFFh
048000h–04FFFFh
050000h–057FFFh
058000h–05FFFFh
060000h–067FFFh
068000h–06FFFFh
070000h–077FFFh
078000h–07FFFFh
080000h–087FFFh
088000h–08FFFFh
090000h–097FFFh
098000h–09FFFFh
0A0000h–0A7FFFh
0A8000h–0AFFFFh
0B0000h–0B7FFFh
0B8000h–0BFFFFh
0C0000h–0C7FFFh
0C8000h–0CFFFFh
0D0000h–0D7FFFh
0D8000h–0DFFFFh
0E0000h–0E7FFFh
0E8000h–0EFFFFh
0F0000h–0F7FFFh
0F8000h–0FFFFFh
100000h–107FFFh
108000h–10FFFFh
110000h–117FFFh
118000h–11FFFFh
120000h–127FFFh
128000h–12FFFFh
130000h–137FFFh
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
16
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
Table 4. Model 03 Sector Addresses (Sheet 2 of 2)
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
(x16)
Address Range
Sector
SA39
SA40
SA41
SA42
SA43
SA44
SA45
SA46
SA47
SA48
SA49
SA50
SA51
SA52
SA53
SA54
SA55
SA56
SA57
SA58
SA59
SA60
SA61
SA62
SA63
SA64
SA65
SA66
SA67
SA68
SA69
SA70
Address Range
100111xxx
101000xxx
101001xxx
101010xxx
101011xxx
101100xxx
101101xxx
101110xxx
101111xxx
110000xxx
110001xxx
110010xxx
110011xxx
110100xxx
110101xxx
110110xxx
110111xxx
111000xxx
111001xxx
111010xxx
111011xxx
111100xxx
111101xxx
111110xxx
111111000
111111001
111111010
111111011
111111100
111111101
111111110
111111111
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
8/4
270000h–27FFFFh
280000h–28FFFFh
290000h–29FFFFh
2A0000h–2AFFFFh
2B0000h–2BFFFFh
2C0000h–2CFFFFh
2D0000h–2DFFFFh
2E0000h–2EFFFFh
2F0000h–2FFFFFh
300000h–30FFFFh
310000h–31FFFFh
320000h–32FFFFh
330000h–33FFFFh
340000h–34FFFFh
350000h–35FFFFh
360000h–36FFFFh
370000h–37FFFFh
380000h–38FFFFh
390000h–39FFFFh
3A0000h–3AFFFFh
3B0000h–3BFFFFh
3C0000h–3CFFFFh
3D0000h–3DFFFFh
3E0000h–3EFFFFh
3F0000h–3F1FFFh
3F2000h–3F3FFFh
3F4000h–3F5FFFh
3F6000h–3F7FFFh
3F8000h–3F9FFFh
3FA000h–3FBFFFh
3FC000h–3FDFFFh
3FE000h–3FFFFFh
138000h–13FFFFh
140000h–147FFFh
148000h–14FFFFh
150000h–157FFFh
158000h–15FFFFh
160000h–167FFFh
168000h–16FFFFh
170000h–177FFFh
178000h–17FFFFh
180000h–187FFFh
188000h–18FFFFh
190000h–197FFFh
198000h–19FFFFh
1A0000h–1A7FFFh
1A8000h–1AFFFFh
1B0000h–1B7FFFh
1B8000h–1BFFFFh
1C0000h–1C7FFFh
1C8000h–1CFFFFh
1D0000h–1D7FFFh
1D8000h–1DFFFFh
1E0000h–1E7FFFh
1E8000h–1EFFFFh
1F0000h–1F7FFFh
1F8000h–1F8FFFh
1F9000h–1F9FFFh
1FA000h–1FAFFFh
1FB000h–1FBFFFh
1FC000h–1FCFFFh
1FD000h–1FDFFFh
1FE000h–1FEFFFh
1FF000h–1FFFFFh
8/4
8/4
8/4
8/4
8/4
8/4
8/4
Note: The address range is A20:A-1 in byte mode (BYTE#=VIL) or A20:A0 in word mode (BYTE#=VIH).
Table 5. Model 03 Secured Silicon Sector Addresses
Sector Address
A20–A12
Sector Size
(bytes/words)
(x8)
(x16)
Address Range
Address Range
111111111
256/128
3FFF00h–3FFFFFh
1FFF80h–1FFFFFh
June 13, 2005 S29AL032D_00_A3
S29AL032D
17
A d v a n c e I n f o r m a t i o n
Table 6. Model 04 Sector Addresses (Sheet 1 of 2)
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
Sector
SA0
SA1
000000000
000000001
000000010
000000011
000000100
000000101
000000110
000000111
000001xxx
000010xxx
000011xxx
000100xxx
000101xxx
000110xxx
000111xxx
001000xxx
001001xxx
001010xxx
001011xxx
001100xxx
001101xxx
001110xxx
001111xxx
010000xxx
010001xxx
010010xxx
010011xxx
010100xxx
010101xxx
010110xxx
010111xxx
011000xxx
011001xxx
011010xxx
011011xxx
011100xxx
011101xxx
011110xxx
011111xxx
8/4
000000h-001FFFh
002000h-003FFFh
004000h-005FFFh
006000h-007FFFh
008000h-009FFFh
00A000h-00BFFFh
00C000h-00DFFFh
00E000h-00FFFFh
010000h-01FFFFh
020000h-02FFFFh
030000h-03FFFFh
040000h-04FFFFh
050000h-05FFFFh
060000h-06FFFFh
070000h-07FFFFh
080000h-08FFFFh
090000h-09FFFFh
0A0000h-0AFFFFh
0B0000h-0BFFFFh
0C0000h-0CFFFFh
0D0000h-0DFFFFh
0E0000h-0EFFFFh
0F0000h-0FFFFFh
100000h-10FFFFh
110000h-11FFFFh
120000h-12FFFFh
130000h-13FFFFh
140000h-14FFFFh
150000h-15FFFFh
160000h-16FFFFh
170000h-17FFFFh
180000h-18FFFFh
190000h-19FFFFh
1A0000h-1AFFFFh
1B0000h-1BFFFFh
1C0000h-1CFFFFh
1D0000h-1DFFFFh
1E0000h-1EFFFFh
1F0000h-1FFFFFh
000000h–000FFFh
001000h–001FFFh
002000h–002FFFh
003000h–003FFFh
004000h–004FFFh
005000h–005FFFh
006000h–006FFFh
007000h–007FFFh
008000h–00FFFFh
010000h–017FFFh
018000h–01FFFFh
020000h–027FFFh
028000h–02FFFFh
030000h–037FFFh
038000h–03FFFFh
040000h–047FFFh
048000h–04FFFFh
050000h–057FFFh
058000h–05FFFFh
060000h–067FFFh
068000h–06FFFFh
070000h–077FFFh
078000h–07FFFFh
080000h–087FFFh
088000h–08FFFFh
090000h–097FFFh
098000h–09FFFFh
0A0000h–0A7FFFh
0A8000h–0AFFFFh
0B0000h–0B7FFFh
0B8000h–0BFFFFh
0C0000h–0C7FFFh
0C8000h–0CFFFFh
0D0000h–0D7FFFh
0D8000h–0DFFFFh
0E0000h–0E7FFFh
0E8000h–0EFFFFh
0F0000h–0F7FFFh
0F8000h–0FFFFFh
8/4
SA2
8/4
SA3
8/4
SA4
8/4
SA5
8/4
SA6
8/4
SA7
8/4
SA8
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
18
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
Table 6. Model 04 Sector Addresses (Sheet 2 of 2)
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
Sector
SA39
SA40
SA41
SA42
SA43
SA44
SA45
SA46
SA47
SA48
SA49
SA50
SA51
SA52
SA53
SA54
SA55
SA56
SA57
SA58
SA59
SA60
SA61
SA62
SA63
SA64
SA65
SA66
SA67
SA68
SA69
SA70
100000xxx
100001xxx
100010xxx
100011xxx
100100xxx
100101xxx
100110xxx
100111xxx
101000xxx
101001xxx
101010xxx
101011xxx
101100xxx
101101xxx
101110xxx
101111xxx
111000xxx
110001xxx
110010xxx
110011xxx
110100xxx
110101xxx
110110xxx
110111xxx
111000xxx
111001xxx
111010xxx
111011xxx
111100xxx
111101xxx
111110xxx
111111xxx
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
200000h-20FFFFh
210000h-21FFFFh
220000h-22FFFFh
230000h-23FFFFh
240000h-24FFFFh
250000h-25FFFFh
260000h-26FFFFh
270000h-27FFFFh
280000h-28FFFFh
290000h-29FFFFh
2A0000h-2AFFFFh
2B0000h-2BFFFFh
2C0000h-2CFFFFh
2D0000h-2DFFFFh
2E0000h-2EFFFFh
2F0000h-2FFFFFh
300000h-30FFFFh
310000h-31FFFFh
320000h-32FFFFh
330000h-33FFFFh
340000h-34FFFFh
350000h-35FFFFh
360000h-36FFFFh
370000h-37FFFFh
380000h-38FFFFh
390000h-39FFFFh
3A0000h-3AFFFFh
3B0000h-3BFFFFh
3C0000h-3CFFFFh
3D0000h-3DFFFFh
3E0000h-3EFFFFh
3F0000h-3FFFFFh
100000h–107FFFh
108000h–10FFFFh
110000h–117FFFh
118000h–11FFFFh
120000h–127FFFh
128000h–12FFFFh
130000h–137FFFh
138000h–13FFFFh
140000h–147FFFh
148000h–14FFFFh
150000h–157FFFh
158000h–15FFFFh
160000h–167FFFh
168000h–16FFFFh
170000h–177FFFh
178000h–17FFFFh
180000h–187FFFh
188000h–18FFFFh
190000h–197FFFh
198000h–19FFFFh
1A0000h–1A7FFFh
1A8000h–1AFFFFh
1B0000h–1B7FFFh
1B8000h–1BFFFFh
1C0000h–1C7FFFh
1C8000h–1CFFFFh
1D0000h–1D7FFFh
1D8000h–1DFFFFh
1E0000h–1E7FFFh
1E8000h–1EFFFFh
1F0000h–1F7FFFh
1F8000h–1FFFFFh
Note: The address range is A20:A-1 in byte mode (BYTE#=VIL) or A20:A0 in word mode (BYTE#=VIH).
Table 7. Model 04 Secured Silicon Sector Addresses
Sector Address
A20–A12
Sector Size
(bytes/words)
(x8)
(x16)
Address Range
Address Range
000000000
256/128
000000h-0000FFh
00000h-0007Fh
June 13, 2005 S29AL032D_00_A3
S29AL032D
19
A d v a n c e I n f o r m a t i o n
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection ver-
ification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for
programming equipment to automatically match a device to be programmed with its correspond-
ing programming algorithm. However, the autoselect codes can also be accessed in-system
through the command register.
When using programming equipment, the autoselect mode requires V (11.5 V to 12.5 V) on
ID
address pin A9. Address pins A6, A1, and A0 must be as shown in Table 8. In addition, when ver-
ifying sector protection, the sector address must appear on the appropriate highest order address
bits (see Table 2 on page 14 and Table 4 on page 16). Table 8 shows the remaining address bits
that are don’t care. When all necessary bits have been set as required, the programming equip-
ment may then read the corresponding identifier code on DQ7-DQ0.
To access the autoselect codes in-system, the host system can issue the autoselect command via
the command register, as shown in Table 17 on page 38. This method does not require V . See
ID
“Command Definitions” for details on using the autoselect mode.
Table 8. S29AL032D Autoselect Codes (High Voltage Method)
A19 A11
to to
A12 A10
A8
to
A7
A5
to
A4
A3
to
A2
DQ8
to
DQ15
DQ7
to
DQ0
Description
Mode
CE#
OE#
WE#
A9
A6
L
A1
L
A0
L
Manufacturer ID: Spansion
L
L
L
L
H
H
X
X
V
V
X
X
L
X
01h
ID
ID
Device ID:
S29AL032D
(Model 00)
Byte
X
X
X
L
X
L
L
H
N/A
A3h
Device ID:
S29AL032D
(Model 03)
Word
Byte
Word
Byte
L
L
L
L
L
L
L
L
H
H
H
H
22h
X
F6h
X
X
X
X
V
V
X
X
L
L
X
X
L
L
L
L
H
H
ID
ID
F6h
F9h
Device ID:
S29AL032D
(Model 04)
22h
X
F9h
X
01h (protected)
Sector Protection
Verification
L
L
L
L
H
H
SA
X
X
X
V
V
X
X
L
L
X
X
L
L
H
H
L
ID
ID
00h
(unprotected)
X
X
X
X
X
X
X
85 (factory
locked)
Secured Silicon Sector
Indicator Bit (DQ7)
(Model 00)
H
05 (not factory
locked)
8D (factory
locked)
Secured Silicon Sector
Indicator Bit (DQ7)
(Model 03)
L
L
L
L
H
H
X
X
X
X
V
V
X
X
L
L
X
X
L
L
H
H
H
H
ID
ID
0D (not factory
locked)
9D (factory
locked)
Secured Silicon Sector
Indicator Bit (DQ7)
(Model 04)
1D (not factory
locked)
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Note: The autoselect codes may also be accessed in-system via command sequences. See Table 17 on page 38.
Sector Protection/Unprotection
The hardware sector protection feature disables both program and erase operations in any sector.
The hardware sector unprotection feature re-enables both program and erase operations in pre-
viously protected sectors.
20
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
The device is shipped with all sectors unprotected. Spansion offers the option of programming
and protecting sectors at its factory prior to shipping the device through the Spansion Express-
Flash™ Service. Contact a Spansion representative for further details.
It is possible to determine whether a sector is protected or unprotected. See “Autoselect Mode”
for details.
Sector protection/unprotection can be implemented via two methods.
The primary method requires V on the RESET# pin only, and can be implemented either in-sys-
ID
tem or via programming equipment. Figure 2, on page 25 shows the algorithms and Figure 26,
on page 59 shows the timing diagram. This method uses standard microprocessor bus cycle tim-
ing. For sector unprotect, all unprotected sectors must first be protected prior to the first sector
unprotect write cycle.
The alternate method intended only for programming equipment requires V on address pin A9
ID
and OE#. This method is compatible with programmer routines written for earlier 3.0 volt-only
Spansion flash devices. Details on this method are provided in a supplement, publication number
21468. Contact a Spansion representative to request a copy.
Table 9. Sector Block Addresses for Protection/Unprotection — Model 00
Sector/Sector Block
A21–A16
Sector/Sector Block Size
SA0
000000
64 Kbytes
000001,000010,
000011
SA1-SA3
SA4-SA7
192 (3x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
000100, 000101,
000110, 000111
001000, 001001,
001010, 001011
SA8-SA11
SA12-SA15
SA16-SA19
SA20-SA23
SA24-SA27
SA28-SA31
SA32-SA35
SA36-SA39
SA40-SA43
SA44-SA47
SA48-SA51
SA52-SA55
SA56-SA59
001100, 001101,
001110, 001111
010000, 010001,
010010, 010011
010100, 010101,
010110, 010111
011000, 011001,
011010, 011011
011100, 011101,
011110, 011111
100000, 100001,
100010, 100011
100100, 100101,
100110, 100111
101000, 101001,
101010, 101011
101100, 101101,
101110, 101111
110000, 110001,
110010, 110011
110100, 110101,
110110, 110111
111000, 111001,
111010, 111011
111100, 111101,
111110
SA60-SA62
SA63
192 (4x64) Kbytes
64 Kbytes
111111
June 13, 2005 S29AL032D_00_A3
S29AL032D
21
A d v a n c e I n f o r m a t i o n
Table 10. Sector Block Addresses for Protection/Unprotection — Model 03
Sector / Sector Block
A20–A12
Sector/Sector Block Size
000000XXX,
000001XXX,
000010XXX
000011XXX
SA0-SA3
256 (4x64) Kbytes
SA4-SA7
0001XXXXX
0010XXXXX
0011XXXXX
0100XXXXX
0101XXXXX
0110XXXXX
0111XXXXX
1000XXXXX
1001XXXXX
1010XXXXX
1011XXXXX
1100XXXXX
1101XXXXX
1110XXXXX
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
SA8-SA11
SA12-SA15
SA16-SA19
SA20-SA23
SA24-SA27
SA28-SA31
SA32-SA35
SA36-SA39
SA40-SA43
SA44-SA47
SA48-SA51
SA52-SA55
SA56-SA59
111100XXX,
111101XXX,
111110XXX
SA60-SA62
192 (3x64) Kbytes
SA63
SA64
SA65
SA66
SA67
SA68
SA69
SA70
111111000
111111001
111111010
111111011
111111100
111111101
111111110
111111111
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
22
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
Table 11. Sector Block Addresses for Protection/Unprotection — Model 04
Sector / Sector Block
A20–A12
Sector/Sector Block Size
111111XXX,
111110XXX,
111101XXX,
111100XXX
SA70-SA67
256 (4x64) Kbytes
SA66-SA63
SA62-SA59
SA58-SA55
SA54-SA51
SA50-SA47
SA46-SA43
SA42-SA39
SA38-SA35
SA34-SA31
SA30-SA27
SA26-SA23
SA22–SA19
SA18-SA15
SA14-SA11
1110XXXXX
1101XXXXX
1100XXXXX
1011XXXXX
1010XXXXX
1001XXXXX
1000XXXXX
0111XXXXX
0110XXXXX
0101XXXXX
0100XXXXX
0011XXXXX
0010XXXXX
0001XXXXX
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
000011XXX,
000010XXX,
000001XXX
SA10-SA8
192 (3x64) Kbytes
SA7
SA6
SA5
SA4
SA3
SA2
SA1
SA0
000000111
000000110
000000101
000000100
000000011
000000010
000000001
000000000
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
Write Protect (WP#) — Models 03, 04 Only
The Write Protect function provides a hardware method of protecting certain boot sectors without
using V . This function is one of two provided by the WP#/ACC pin.
ID
If the system asserts V on the WP#/ACC pin, the device disables program and erase functions
IL
in the two outermost 8 Kbyte boot sectors independently of whether those sectors were protected
or unprotected using the method described in Sector Protection/Unprotection on page 20. The
two outermost 8 Kbyte boot sectors are the two sectors containing the lowest addresses in a bot-
tom-boot-configured device, or the two sectors containing the highest addresses in a top-boot-
configured device.
If the system asserts V on the WP#/ACC pin, the device reverts to whether the two outermost
IH
8K Byte boot sectors were last set to be protected or unprotected. That is, sector protection or
unprotection for these two sectors depends on whether they were last protected or unprotected
using the method described in Sector Protection/Unprotection on page 20.
Note that the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the
device may result.
June 13, 2005 S29AL032D_00_A3
S29AL032D
23
A d v a n c e I n f o r m a t i o n
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected sectors to change data in-sys-
tem. The Sector Unprotect mode is activated by setting the RESET# pin to V . During this mode,
ID
formerly protected sectors can be programmed or erased by selecting the sector addresses. Once
V
is removed from the RESET# pin, all the previously protected sectors are protected again.
ID
shows the algorithm, and Figure 24, on page 58 shows the timing diagrams, for this feature.
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once
again.
Figure 1. Temporary Sector Unprotect Operation
24
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A d v a n c e I n f o r m a t i o n
START
START
Protect all sectors:
PLSCNT = 1
PLSCNT = 1
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
RESET# = VID
RESET# = VID
Wait 1 μs
Wait 1 μs
unprotect address
No
First Write
Cycle = 60h?
No
First Write
Cycle = 60h?
Temporary Sector
Unprotect Mode
Temporary Sector
Unprotect Mode
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Wait 150 µs
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
Reset
PLSCNT = 1
Increment
PLSCNT
Wait 15 ms
A1 = 1, A0 = 0
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Read from
sector address
with A6 = 1,
Data = 01h?
Yes
A1 = 1, A0 = 0
No
Yes
Set up
next sector
address
Yes
No
PLSCNT
= 1000?
Protect another
sector?
Data = 00h?
Yes
Device failed
No
Yes
Remove VID
from RESET#
No
Last sector
verified?
Device failed
Write reset
command
Yes
Remove VID
Sector Unprotect
Algorithm
from RESET#
Sector Protect
Algorithm
Sector Protect
complete
Write reset
command
Sector Unprotect
complete
Figure 2. In-System Sector Protect/Unprotect Algorithms
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A d v a n c e I n f o r m a t i o n
Secured Silicon Sector Flash Memory Region
The Secured Silicon Sector feature provides a 256 byte Flash memory region that enables per-
manent part identification through an Electronic Serial Number (ESN). The Secured Silicon Sector
uses a Secured Silicon Sector Indicator Bit (DQ7) to indicate whether or not the Secured Silicon
Sector is locked when shipped from the factory. This bit is permanently set at the factory and can-
not be changed, which prevents cloning of a factory locked part. This ensures the security of the
ESN once the product is shipped to the field.
Spansion offers the device with the Secured Silicon Sector either factory locked or customer lock-
able. The factory-locked version is always protected when shipped from the factory, and has the
Secured Silicon Sector Indicator Bit permanently set to a 1. The customer-lockable version is
shipped with the Secured Silicon Sector unprotected, allowing customers to utilize the that sector
in any manner they choose. The customer-lockable version has the Secured Silicon Sector Indi-
cator Bit permanently set to a 0. Thus, the Secured Silicon Sector Indicator Bit prevents
customer-lockable devices from being used to replace devices that are factory locked.
The system accesses the Secured Silicon Sector through a command sequence (see Enter Se-
cured Silicon Sector/Exit Secured Silicon Sector Command Sequence on page 32). After the
system writes the Enter Secured Silicon Sector command sequence, it may read the Secured Sil-
icon Sector by using the addresses normally occupied by the boot sectors. This mode of operation
continues until the system issues the Exit Secured Silicon Sector command sequence, or until
power is removed from the device. On power-up, or following a hardware reset, the device reverts
to sending commands to the boot sectors.
Factory Locked: Secured Silicon Sector Programmed
and Protected at the Factory
In a factory locked device, the Secured Silicon Sector is protected when the device is shipped from
the factory. The Secured Silicon Sector cannot be modified in any way. The device is available pre-
programmed with one of the following:
A random, secure ESN only
Customer code through the ExpressFlash service
Both a random, secure ESN and customer code through the ExpressFlash service.
In devices that have an ESN, a Bottom Boot device has the 16-byte (8-word) ESN in sector 0 at
addresses 00000h–0000Fh in byte mode (or 00000h–00007h in word mode). In the Top Boot de-
vice the ESN is in sector 70 at addresses 3FFF00h–3FFF0Fh in byte mode (or 1FFF80h–1FFF87h
in word mode). In the Uniform device the ESN is in sector 63 at addresses 3FFF00h-3FFF0Fh in
byte mode (or 1FFF80h-1FFF87h in word mode).
Customers may opt to have their code programmed by Spansion through the Spansion Express-
Flash service. Spansion programs the customer’s code, with or without the random ESN. The
devices are then shipped from the Spansion factory with the Secured Silicon Sector permanently
locked. Contact a Spansion representative for details on using the Spansion ExpressFlash service.
Customer Lockable: Secured Silicon Sector NOT Programmed
or Protected at the Factory
The customer lockable version allows the Secured Silicon Sector to be programmed once and then
permanently locked after it ships from Spansion. Note that the accelerated programming (ACC)
and unlock bypass functions are not available when programming the Secured Silicon Sector.
The Secured Silicon Sector area can be protected using the following procedures:
Write the three-cycle Enter Secured Silicon Region command sequence, and then follow the
in-system sector protect algorithm as shown in Figure 2, on page 25, except that RESET#
may be at either V or V . This allows in-system protection of the Secured Silicon Sector
IH
ID
26
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A d v a n c e I n f o r m a t i o n
without raising any device pin to a high voltage. Note that this method is only applicable to
the Secured Silicon Sector.
To verify the protect/unprotect status of the Secured Silicon Sector, follow the algorithm
shown in Figure 3, on page 27.
Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured
Silicon Sector Region command sequence to return to reading and writing the remainder of the
array.
The Secured Silicon Sector protection must be used with caution since, once protected, there is
no procedure available for unprotecting the Secured Silicon Sector area and none of the bits in
the Secured Silicon Sector memory space can be modified in any way.
START
If data = 00h,
RESET# =
SecSi Sector is
VIH or VID
unprotected.
If data = 01h,
SecSi Sector is
protected.
Wait 1 μs
Write 60h to
any address
Remove VIH or VID
from RESET#
Write 40h to SecSi
Sector address
Write reset
with A6 = 0,
command
A1 = 1, A0 = 0
SecSi Sector
Read from SecSi
Protect Verify
Sector address
complete
with A6 = 0,
A1 = 1, A0 = 0
Figure 3. Secured Silicon Sector Protect Verify
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data
protection against inadvertent writes (refer to Table 17 on page 38 for command definitions). In
addition, the following hardware data protection measures prevent accidental erasure or pro-
gramming, which might otherwise be caused by spurious system level signals during V
power-up and power-down transitions, or from system noise.
CC
Low V
Write Inhibit
CC
When V is less than V
, the device does not accept any write cycles. This protects data during
LKO
CC
V
power-up and power-down. The command register and all internal program/erase circuits are
CC
disabled, and the device resets. Subsequent writes are ignored until V is greater than V
. The
CC
LKO
system must provide the proper signals to the control pins to prevent unintentional writes when
is greater than V
V
.
LKO
CC
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = V , CE# = V or WE# = V . To initiate
IL
IH
IH
a write cycle, CE# and WE# must be a logical zero while OE# is a logical one.
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A d v a n c e I n f o r m a t i o n
Power-Up Write Inhibit
If WE# = CE# = V and OE# = V during power up, the device does not accept commands on
IL
IH
the rising edge of WE#. The internal state machine is automatically reset to reading array data
on power-up.
Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software inter-
rogation handshake, which allows specific vendor-specified software algorithms to be used for
entire families of devices. Software support can then be device-independent, JEDEC ID-indepen-
dent, and forward- and backward-compatible for the specified flash device families. Flash vendors
can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to
address 55h in word mode (or address AAh in byte mode), any time the device is ready to read
array data. The system can read CFI information at the addresses given in Tables 12–15. In word
mode, the upper address bits (A7–MSB) must be all zeros. To terminate reading CFI data, the
system must write the reset command.
The system can also write the CFI query command when the device is in the autoselect mode.
The device enters the CFI query mode, and the system can read CFI data at the addresses given
in Tables 12–15. The system must write the reset command to return the device to the autoselect
mode.
For further information, please contact a Spansion representative for a copy of this document.
Table 12. CFI Query Identification String
Addresses
(Models03,04
Byte Mode
Addresses
Only)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string QRY
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
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Table 13. System Interface String
Addresses
(Models03,04
Byte Mode
Only)
Addresses
Data
Description
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Bh
36h
38h
0027h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0036h
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
0000h
0000h
0004h
0000h
000Ah
0000h
0005h
0000h
0004h
0000h
VPP Min. voltage (00h = no VPP pin present)
VPP Max. voltage (00h = no VPP pin present)
Typical timeout per single byte/word write 2N µs
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
Typical timeout per individual block erase 2N ms
Typical timeout for full chip erase 2N ms (00h = not supported)
Max. timeout for byte/word write 2N times typical
Max. timeout for buffer write 2N times typical
Max. timeout per individual block erase 2N times typical
Max. timeout for full chip erase 2N times typical (00h = not supported)
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A d v a n c e I n f o r m a t i o n
Table 14. Device Geometry Definition
Addresses
(Models03,04
Byte Mode
Only)
Addresses
Data
Description
27h
4Eh
0016h
Device Size = 2N byte
28h
29h
50h
52h
000xh
0000h
Flash Device Interface description (refer to CFI publication 100)
(0 = Model 00, 2 = Models 03, 04)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
Number of Erase Block Regions within device
(1 = Model 00, 2 = Models 03, 04)
2Ch
58h
000xh
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
(003F, 0000, 0000, 0001) = Model 00
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
00xxh
0000h
00x0h
000xh
(0007, 0000, 0020, 0000) = Models 03, 04
31h
32h
33h
34h
62h
64h
66h
68h
00xxh
0000h
0020h
000xh
Erase Block Region 2 Information
(0000, 0000, 0000, 0000) = Model 00
(003E, 0000, 0000, 0001) = Models 03, 04
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
Table 15. Primary Vendor-Specific Extended Query (Sheet 1 of 2)
Addresses
(Models03,04
Byte Mode
Only)
Addresses
Data
Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
44h
86h
88h
0031h
0031h
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock
0 = Required (Models 03, 04), 1 = Not Required (Model 00)
45h
46h
47h
8Ah
8Ch
8Eh
000xh
0002h
0001h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
Sector Protect
0 = Not Supported, X = Number of sectors in per group
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Table 15. Primary Vendor-Specific Extended Query (Sheet 2 of 2)
Addresses
(Models03,04
Byte Mode
Only)
Addresses
Data
Description
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
48h
90h
92h
0001h
Sector Protect/Unprotect scheme
01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
49h
0004h
Simultaneous Operation
00 = Not Supported, 01 = Supported
4Ah
4Bh
4Ch
94h
96h
98h
0000h
0000h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
ACC (Acceleration) Supply Minimum
4Dh
4Eh
4Fh
9Ah
9Ch
9Eh
00B5h
00C5h
000xh
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
(0 = Model 00, 2 = Model 03, 3 = Model 04)
Command Definitions
Writing specific address and data commands or sequences into the command register initiates
device operations. Table 17 on page 38 defines the valid register command sequences. Writing
incorrect address and data values or writing them in the improper sequence resets the de-
vice to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is
latched on the rising edge of WE# or CE#, whichever happens first. Refer to the appropriate tim-
ing diagrams in the “AC Characteristics” section.
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are
required to retrieve data. The device is also ready to read array data after completing an Embed-
ded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode.
The system can read array data using the standard read timings, except that if it reads at an ad-
dress within erase-suspended sectors, the device outputs status data. After completing a
programming operation in the Erase Suspend mode, the system may once again read array data
with the same exception. See Erase Suspend/Erase Resume Commands on page 35 for more in-
formation on this mode.
The system must issue the reset command to re-enable the device for reading array data if DQ5
goes high, or while in the autoselect mode. See the Reset Command on page 32 section, next.
See also Requirements for Reading Array Data on page 11 for more information. The Read
Operations on page 50 provides the read parameters, and Figure 14, on page 50 shows the timing
diagram.
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A d v a n c e I n f o r m a t i o n
Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are
don’t care for this command.
The reset command may be written between the sequence cycles in an erase command sequence
before erasing begins. This resets the device to reading array data. Once erasure begins, however,
the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command se-
quence before programming begins. This resets the device to reading array data (also applies to
programming in Erase Suspend mode). Once programming begins, however, the device ignores
reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command se-
quence. Once in the autoselect mode, the reset command must be written to return to reading
array data (also applies to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation, writing the reset command returns the
device to reading array data (also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and de-
vices codes, and determine whether a sector is protected. Table 17 on page 38 shows the address
and data requirements. This method is an alternative to that shown in Table 8 on page 20, which
is intended for PROM programmers and requires V on address bit A9.
ID
The autoselect command sequence is initiated by writing two unlock cycles, followed by the au-
toselect command. The device then enters the autoselect mode, and the system may read at any
address any number of times, without initiating another command sequence.
A read cycle at address 0XXX00h retrieves the manufacturer code. A read cycle at address
0XXX01h returns the device code. A read cycle containing a sector address (SA) and the address
02h in word mode (or 04h in byte mode) returns 01h if that sector is protected, or 00h if it is
unprotected. Refer to Table 2 on page 14 and Table 4 on page 16 for valid sector addresses.
The system must write the reset command to exit the autoselect mode and return to reading
array data.
Enter Secured SiliconSector/Exit Secured Silicon Sector
Command Sequence
The Secured Silicon Sector region provides a secured data area containing a random, sixteen-
byte electronic serial number (ESN). The system can access the Secured Silicon Sector region by
issuing the three-cycle Enter Secured Silicon Sector command sequence. The device continues to
access the Secured Silicon Sector region until the system issues the four-cycle Exit Secured Sili-
con Sector command sequence. The Exit Secured Silicon Sector command sequence returns the
device to normal operation. Table 16. S29AL032D Command Definitions — Model 00 on page 37
and Table 17. S29AL032D Command Definitions — Models 03, 04 on page 38 show the ad-
dresses and data requirements for both command sequences. Note that the ACC function and
unlock bypass modes are not available when the device enters the Secured Silicon Sector. See
also Secured Silicon Sector Flash Memory Region on page 26 for further information.
Word/Byte Program Command Sequence
Models 03, 04 may program the device by word or byte, depending on the state of the BYTE#
pin. Model 00 may program the device by byte only. Programming is a four-bus-cycle operation.
The program command sequence is initiated by writing two unlock write cycles, followed by the
program set-up command. The program address and data are written next, which in turn initiate
32
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the Embedded Program algorithm. The system is not required to provide further controls or tim-
ings. The device automatically generates the program pulses and verifies the programmed cell
margin. Table 17 on page 38 shows the address and data requirements for the byte program
command sequence.
When the Embedded Program algorithm is complete, the device then returns to reading array
data and addresses are no longer latched. The system can determine the status of the program
operation by using DQ7, DQ6, or RY/BY#. See Write Operation Status on page 39 for information
on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note
that a hardware reset immediately terminates the programming operation. The Byte Program
command sequence should be reinitiated once the device has reset to reading array data, to en-
sure data integrity.
Programming is allowed in any sequence and across sector boundaries. A bit cannot be pro-
grammed from a 0 back to a 1. Attempting to do so may halt the operation and set DQ5 to 1,
or cause the Data# Polling algorithm to indicate the operation was successful. However, a suc-
ceeding read will show that the data is still 0. Only erase operations can convert a 0 to a 1.
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to the device faster than
using the standard program command sequence. The unlock bypass command sequence is initi-
ated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock
bypass command, 20h. The device then enters the unlock bypass mode. A two-cycle unlock by-
pass program command sequence is all that is required to program in this mode. The first cycle
in this sequence contains the unlock bypass program command, A0h; the second cycle contains
the program address and data. Additional data is programmed in the same manner. This mode
dispenses with the initial two unlock cycles required in the standard program command sequence,
resulting in faster total programming time. Table 17 on page 38 shows the requirements for the
command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset com-
mands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock
bypass reset command sequence. The first cycle must contain the data 90h; the second cycle the
data 00h. Addresses are don’t care for both cycles. The device then returns to reading array data.
Figure 4, on page 34 illustrates the algorithm for the program operation. See the Erase/Program
Operations on page 54 for parameters, and to Figure 18, on page 55 for timing diagrams.
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A d v a n c e I n f o r m a t i o n
START
Write Program
Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
Yes
No
Increment Address
Last Address?
Yes
Programming
Completed
NOTE: See Table 17 for program command sequence.
Figure 4. Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing
two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then
followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The
device does not require the system to preprogram prior to erase. The Embedded Erase algorithm
automatically preprograms and verifies the entire memory for an all zero data pattern prior to
electrical erase. The system is not required to provide any controls or timings during these oper-
ations. Table 17 on page 38 shows the address and data requirements for the chip erase
command sequence.
Any commands written to the chip during the Embedded Erase algorithm are ignored. Note that
a hardware reset during the chip erase operation immediately terminates the operation. The
Chip Erase command sequence should be reinitiated once the device has returned to reading
array data, to ensure data integrity.
The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#.
See Write Operation Status on page 39 for information on these status bits. When the Embedded
Erase algorithm is complete, the device returns to reading array data and addresses are no longer
latched.
Figure 5, on page 36 illustrates the algorithm for the erase operation. See Erase/Program
Operations on page 54 for parameters, and to Figure 19, on page 56 for timing diagrams.
34
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A d v a n c e I n f o r m a t i o n
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writ-
ing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then
followed by the address of the sector to be erased, and the sector erase command. Table 17 on
page 38 shows the address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram the memory prior to erase. The Embedded
Erase algorithm automatically programs and verifies the sector for an all zero data pattern prior
to electrical erase. The system is not required to provide any controls or timings during these
operations.
After the command sequence is written, a sector erase time-out of 50 µs begins. During the time-
out period, additional sector addresses and sector erase commands may be written. Loading the
sector erase buffer may be done in any sequence, and the number of sectors may be from one
sector to all sectors. The time between these additional cycles must be less than 50 µs, otherwise
the last address and command might not be accepted, and erasure may begin. It is recommended
that processor interrupts be disabled during this time to ensure all commands are accepted. The
interrupts can be re-enabled after the last Sector Erase command is written. If the time between
additional sector erase commands can be assumed to be less than 50 µs, the system need not
monitor DQ3. Any command other than Sector Erase or Erase Suspend during the time-
out period resets the device to reading array data. The system must rewrite the command
sequence and any additional sector addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out. (See the “DQ3:
Sector Erase Timer” section.) The time-out begins from the rising edge of the final WE# pulse in
the command sequence.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other
commands are ignored. Note that a hardware reset during the sector erase operation immedi-
ately terminates the operation. The Sector Erase command sequence should be reinitiated once
the device has returned to reading array data, to ensure data integrity.
When the Embedded Erase algorithm is complete, the device returns to reading array data and
addresses are no longer latched. The system can determine the status of the erase operation by
using DQ7, DQ6, DQ2, or RY/BY#. (Refer to “Write Operation Status” for information on these
status bits.)
Figure 5, on page 36 illustrates the algorithm for the erase operation. Refer to Erase/Program
Operations on page 54 for parameters, and to Figure 19, on page 56 for timing diagrams.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt a sector erase operation and then
read data from, or program data to, any sector not selected for erasure. This command is valid
only during the sector erase operation, including the 50 µs time-out period during the sector erase
command sequence. The Erase Suspend command is ignored if written during the chip erase op-
eration or Embedded Program algorithm. Writing the Erase Suspend command during the Sector
Erase time-out immediately terminates the time-out period and suspends the erase operation.
Addresses are don’t-cares when writing the Erase Suspend command.
When the Erase Suspend command is written during a sector erase operation, the device requires
a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command
is written during the sector erase time-out, the device immediately terminates the time-out pe-
riod and suspends the erase operation.
After the erase operation has been suspended, the system can read array data from or program
data to any sector not selected for erasure. (The device erase suspends all sectors selected for
erasure.) Normal read and write timings and command definitions apply. Reading at any address
June 13, 2005 S29AL032D_00_A3
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35
A d v a n c e I n f o r m a t i o n
within erase-suspended sectors produces status data on DQ7–DQ0. The system can use DQ7, or
DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. See
Write Operation Status on page 39 for information on these status bits.
After an erase-suspended program operation is complete, the system can once again read array
data within non-suspended sectors. The system can determine the status of the program opera-
tion using the DQ7 or DQ6 status bits, just as in the standard program operation. See Write
Operation Status on page 39 for more information.
The system may also write the autoselect command sequence when the device is in the Erase
Suspend mode. The device allows reading autoselect codes even at addresses within erasing sec-
tors, since the codes are not stored in the memory array. When the device exits the autoselect
mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation.
See Autoselect Command Sequence on page 32 for more information.
The system must write the Erase Resume command (address bits are don’t care) to exit the erase
suspend mode and continue the sector erase operation. Further writes of the Resume command
are ignored. Another Erase Suspend command can be written after the device has resumed
erasing.
START
Write Erase
Command Sequence
Data Poll
from System
Embedded
Erase
algorithm
in progress
No
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 17 for erase command sequence.
2. See DQ3: Sector Erase Timer on page 44 for more information.
Figure 5. Erase Operation
36
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
Command Definitions
Table 16. S29AL032D Command Definitions — Model 00
Bus Cycles (Notes 2–4)
Command Sequence
(Note 1)
First
Second
Third
Addr
Fourth
Fifth
Sixth
Addr Data Addr Data
Data
Addr
Data Addr Data Addr Data
Read (Note 5)
1
1
4
4
RA
RD
F0
Reset (Note 7)
XXX
XXX
XXX
Manufacturer ID (Note 8)
Device ID (Note 8)
AA
AA
XXX
XXX
55
55
0XXXXX
0XXXXX
90
90
0XXX00
0XXX01
01
A3
Secured Silicon Sector Factory
Protect (Note 15)
4
4
AAA
AA
AA
555
55
55
AAA
90
90
X06
85/05
XXX
XXX
XXX
XXX
0XXXXX
or
2XXXXX
00
01
Sector Protect Verify
(Note 9)
SA
X02
Enter Secured Silicon Sector Region
Exit Secured Silicon Sector Region
Byte Program
3
4
4
3
XXX
XXX
XXX
XXX
AA
AA
AA
AA
XXX
XXX
XXX
XXX
55
55
55
55
XXX
XXX
XXX
XXX
88
90
A0
20
XXX
XXX
PA
00
PD
Unlock Bypass
Unlock Bypass Program
(Note 10)
2
2
XXX
XXX
A0
90
PA
PD
00
Unlock Bypass Reset
(Note 11)
XXX
Chip Erase
6
6
1
1
1
XXX
XXX
XXX
XXX
XXX
AA
AA
B0
30
98
XXX
XXX
55
55
XXX
XXX
80
80
XXX
XXX
AA
AA
XXX
XXX
55
55
XXX
SA
10
30
Sector Erase
Erase Suspend (Note 12)
Erase Resume (Note 13)
CFI Query (Note 14)
Legend:
X = Don’t care, RA = Address of the memory location to be read, RD = Data read from location RA during read operation,
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE# or CE#
pulse. PD = Data to be programmed at location PA. Data is latched on the rising edge of WE# or CE# pulse. SA = Address
of the sector to be erased or verified. Address bits A21–A16 uniquely select any sector.
Notes:
1. See Table 1 on page 11 for descriptions of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles are write operations.
4. Address bits are don’t care for unlock and command cycles, except when PA or SA is required.
5. No unlock or command cycles required when device is in read mode.
6. The Reset command is required to return to the read mode when the device is in the autoselect mode or if DQ5 goes high.
7. The fourth cycle of the autoselect command sequence is a read cycle.
8. In the third and fourth cycles of the command sequence, set A21 to 0.
9. In the third cycle of the command sequence, address bit A21 must be set to 0 if verifying sectors 0–31, or to 1 if verifying
sectors 32–64. The data in the fourth cycle is 00h for an unprotected sector/sector block and 01h for a protected sector/
sector block.
10. The Unlock Bypass command is required prior to the Unlock Bypass Program command.
11. The Unlock Bypass Reset command is required to return to reading array data when the device is in the Unlock Bypass mode.
12. The system may read and program functions in non-erasing sectors, or enter the autoselect mode, when in the Erase
Suspend mode. The Erase Suspend command is valid only during a sector erase operation.
13. The Erase Resume command is valid only during the Erase Suspend mode.
14. Command is valid when device is ready to read array data or when device is in autoselect mode.
15. The data is 85h for factory locked and 05h for not factory locked.
June 13, 2005 S29AL032D_00_A3
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A d v a n c e I n f o r m a t i o n
Table 17. S29AL032D Command Definitions — Models 03, 04
Bus Cycles (Notes 2–5)
Command
Sequence
(Note 1)
First
Second
Third
Addr
Fourth
Data Addr Data
Fifth
Sixth
Addr Data Addr Data
Addr Data Addr Data
Read (Note 6)
Reset (Note 7)
1
1
RA
RD
F0
XXX
555
AAA
555
AAA
555
AAA
555
Word
Byte
Word
Byte
Word
Byte
Word
2AA
555
2AA
555
2AA
555
2AA
555
AAA
555
AAA
555
AAA
555
Manufacturer ID
4
4
4
AA
AA
AA
55
55
55
90
90
90
X00
01
X01
X02
X01
X02
X03
22F6
F6
Device ID,
Model 03
22F9
F9
Device ID,
Model 04
Secured Silicon Sector
Factory Protect
Model 03, (Note 9)
4
AA
55
90
8D/0D
9D/1D
Byte
Word
Byte
AAA
555
AAA
555
2AA
555
AAA
555
AAA
X06
X03
X06
Secured Silicon Sector
Factory Protect
Model 04, (Note 9)
4
AA
55
90
XX00
XX01
00
(SA)
X02
Word
Byte
555
AAA
2AA
555
555
AAA
Sector Protect Verify
(Note 10)
4
AA
55
90
(SA)
X04
01
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
555
AAA
555
AAA
55
2AA
555
2AA
555
555
AAA
555
AAA
Enter Secured Silicon Sector
Region
3
4
1
4
3
AA
AA
98
AA
AA
55
55
88
90
Exit Secured Silicon Sector
Region
XXX
PA
00
PD
CFI Query (Note 11)
Program
AA
555
AAA
555
AAA
XXX
XXX
555
AAA
555
AAA
XXX
XXX
2AA
555
2AA
555
PA
555
AAA
555
AAA
55
55
A0
20
Unlock Bypass
Unlock Bypass Program (Note 12)
Unlock Bypass Reset (Note 13)
2
2
A0
90
PD
00
XXX
2AA
555
2AA
555
Word
555
AAA
555
AAA
555
AAA
555
AAA
2AA
555
2AA
555
555
AAA
Chip Erase
6
6
AA
AA
55
55
80
80
AA
AA
55
55
10
30
Byte
Word
Byte
Sector Erase
SA
Erase Suspend (Note 14)
Erase Resume (Note 15)
1
1
B0
30
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever
happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A19–A12 uniquely select any sector.
38
S29AL032D
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A d v a n c e I n f o r m a t i o n
Notes:
1. See Table 1 on page 11 for description of bus operations.
2. All values are in hexadecimal.
3. Except for the read cycle and the fourth cycle of the autoselect command sequence, all bus cycles are write cycles.
4. Data bits DQ15–DQ8 are don’t cares for unlock and command cycles.
5. Address bits A19–A11 are don’t cares for unlock and command cycles, unless SA or PA required.
6. No unlock or command cycles required when reading array data.
7. The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5 goes high (while the device
is providing status data).
8. The fourth cycle of the autoselect command sequence is a read cycle.
9. For Model 03, the data is 8Dh for factory locked and 0Dh for not factory locked. For Model 04, the data is 9Dh for factory locked and 1Dh
for not factory locked.
10. The data is 00h for an unprotected sector and 01h for a protected sector. See “Autoselect Command Sequence” for more information.
11. Command is valid when device is ready to read array data or when device is in autoselect mode.
12. The Unlock Bypass command is required prior to the Unlock Bypass Program command.
13. The Unlock Bypass Reset command is required to return to reading array data when the device is in the unlock bypass mode. F0 is also
acceptable.
14. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase
Suspend command is valid only during a sector erase operation.
15. The Erase Resume command is valid only during the Erase Suspend mode.
Write Operation Status
The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5,
DQ6, DQ7, and RY/BY#. Table 18 on page 44 and the following subsections describe the functions
of these bits. DQ7, RY/BY#, and DQ6 each offer a method for determining whether a program or
erase operation is complete or in progress. These three bits are discussed first.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Algorithm is in
progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the
rising edge of the final WE# pulse in the program or erase command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the
datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend.
When the Embedded Program algorithm is complete, the device outputs the datum programmed
to DQ7. The system must provide the program address to read valid status information on DQ7.
If a program address falls within a protected sector, Data# Polling on DQ7 is active for approxi-
mately 1 µs, then the device returns to reading array data.
During the Embedded Erase algorithm, Data# Polling produces a 0 on DQ7. When the Embedded
Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling pro-
duces a 1 on DQ7. This is analogous to the complement/true datum output described for the
Embedded Program algorithm: the erase function changes all the bits in a sector to 1; prior to
this, the device outputs the complement, or 0. The system must provide an address within any
of the sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected,
Data# Polling on DQ7 is active for approximately 100 µs, then the device returns to reading array
data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unpro-
tected sectors, and ignores the selected sectors that are protected.
When the system detects DQ7 has changed from the complement to true data, it can read valid
data at DQ7–DQ0 on the following read cycles. This is because DQ7 may change asynchronously
with DQ0–DQ6 while Output Enable (OE#) is asserted low. Figure 21, on page 57, Data# Polling
Timings (During Embedded Algorithms), in the AC Characteristics on page 50 section illustrates
this.
June 13, 2005 S29AL032D_00_A3
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A d v a n c e I n f o r m a t i o n
Figure 18, on page 44 shows the outputs for Data# Polling on DQ7. Figure 7, on page 43 shows
the Data# Polling algorithm.
START
Read DQ7–DQ0
Addr = VA
Yes
DQ7 = Data?
No
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
Yes
DQ7 = Data?
No
PASS
FAIL
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within
any sector selected for erasure. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = 1 because
DQ7 may change simultaneously with DQ5.
Figure 6. Data# Polling Algorithm
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm
is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse
in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be
tied together in parallel with a pull-up resistor to V
.
CC
40
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A d v a n c e I n f o r m a t i o n
If the output is low (Busy), the device is actively erasing or programming. (This includes program-
ming in the Erase Suspend mode.) If the output is high (Ready), the device is ready to read array
data (including during the Erase Suspend mode), or is in the standby mode.
Table 18 on page 44 shows the outputs for RY/BY#. Figures Figure 14, on page 50, Figure 15, on
page 51, Figure 18, on page 55 and Figure 19, on page 56 shows RY/BY# for read, reset, pro-
gram, and erase operations, respectively.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or
complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read
at any address, and is valid after the rising edge of the final WE# pulse in the command sequence
(prior to the program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any ad-
dress cause DQ6 to toggle. (The system may use either OE# or CE# to control the read cycles.)
When the operation is complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6
toggles for approximately 100 µs, then returns to reading array data. If not all selected sectors
are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or
is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm
is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops tog-
gling. However, the system must also use DQ2 to determine which sectors are erasing or erase-
suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7: Data# Polling on
page 39).
If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the
program command sequence is written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embed-
ded Program algorithm is complete.
Table 18 on page 44 shows the outputs for Toggle Bit I on DQ6. Figure 7, on page 43 shows the
toggle bit algorithm in flowchart form, and the section Reading Toggle Bits DQ6/DQ2 on page 42
explains the algorithm. Figure 22, on page 57 shows the toggle bit timing diagrams. Figure 23,
on page 58 shows the differences between DQ2 and DQ6 in graphical form. See also the subsec-
tion on DQ2: Toggle Bit II.
DQ2: Toggle Bit II
The Toggle Bit II on DQ2, when used with DQ6, indicates whether a particular sector is actively
erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-
suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command
sequence.
DQ2 toggles when the system reads at addresses within those sectors that have been selected
for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot
distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, in-
dicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish
which sectors are selected for erasure. Thus, both status bits are required for sector and mode
information. Refer to Table 18 on page 44 to compare outputs for DQ2 and DQ6.
Figure 7, on page 43 shows the toggle bit algorithm in flowchart form, and the section Reading
Toggle Bits DQ6/DQ2 on page 42 explains the algorithm. See also the DQ6: Toggle Bit I subsec-
June 13, 2005 S29AL032D_00_A3
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41
A d v a n c e I n f o r m a t i o n
tion. Figure 22, on page 57 shows the toggle bit timing diagram. Figure 23, on page 58 shows
the differences between DQ2 and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 7, on page 43 for the following discussion. Whenever the system initially begins
reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a
toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after
the first read. After the second read, the system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device has completed the program or erase
operation. The system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still tog-
gling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If
it is, the system should then determine again whether the toggle bit is toggling, since the toggle
bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the
device has successfully completed the program or erase operation. If it is still toggling, the device
did not complete the operation successfully, and the system must write the reset command to
return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and
DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through suc-
cessive read cycles, determining the status as described in the previous paragraph. Alternatively,
it may choose to perform other system tasks. In this case, the system must start at the beginning
of the algorithm when it returns to determine the status of the operation (top of Figure 7, on page
43).
42
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
START
Read DQ7–DQ0
(Note 1)
Read DQ7–DQ0
No
Toggle Bit
= Toggle?
Yes
No
DQ5 = 1?
Yes
(Notes
1,2)
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Notes:
1. Read toggle bit twice to determine whether or not it
is toggling. See text.
2. Recheck toggle bit because it may stop toggling as
DQ5 changes to 1. See text.
Figure 7. Toggle Bit Algorithm
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count
limit. Under these conditions DQ5 produces a 1. This is a failure condition that indicates the pro-
gram or erase cycle was not successfully completed.
The DQ5 failure condition may appear if the system tries to program a 1 to a location that is pre-
viously programmed to 0. Only an erase operation can change a 0 back to a 1. Under this
June 13, 2005 S29AL032D_00_A3
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43
A d v a n c e I n f o r m a t i o n
condition, the device halts the operation, and when the operation has exceeded the timing limits,
DQ5 produces a 1.
Under both these conditions, the system must issue the reset command to return the device to
reading array data.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine whether
or not an erase operation has begun. (The sector erase timer does not apply to the chip erase
command.) If additional sectors are selected for erasure, the entire time-out also applies after
each additional sector erase command. When the time-out is complete, DQ3 switches from 0 to
1. The system may ignore DQ3 if the system can guarantee that the time between additional
sector erase commands will always be less than 50 μs. See also the Sector Erase Command
Sequence on page 35 section.
After the sector erase command sequence is written, the system should read the status on DQ7
(Data# Polling) or DQ6 (Toggle Bit I) to ensure the device has accepted the command sequence,
and then read DQ3. If DQ3 is 1, the internally controlled erase cycle has begun; all further com-
mands (other than Erase Suspend) are ignored until the erase operation is complete. If DQ3 is 0,
the device will accept additional sector erase commands. To ensure the command has been ac-
cepted, the system software should check the status of DQ3 prior to and following each
subsequent sector erase command. If DQ3 is high on the second status check, the last command
might not have been accepted. Table 18 shows the outputs for DQ3.
Table 18. Write Operation Status
DQ7
DQ5
DQ2
Operation
(Note 2)
DQ6
(Note 1)
DQ3
N/A
1
(Note 2)
RY/BY#
Embedded Program Algorithm
Embedded Erase Algorithm
DQ7#
0
Toggle
Toggle
0
0
No toggle
Toggle
0
0
Standard
Mode
Reading within Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Erase
Suspend Reading within Non-Erase
Data
Data
Data
0
Data
N/A
Data
N/A
1
0
Mode
Suspended Sector
Erase-Suspend-Program
DQ7#
Toggle
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing
limits. See DQ5: Exceeded Timing Limits on page 43 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
44
S29AL032D
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A d v a n c e I n f o r m a t i o n
Absolute Maximum Ratings
Storage Temperature
Plastic Packages. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +150°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +125°C
Voltage with Respect to Ground
V
(Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
CC
A9, OE#, and RESET# (Note 2) . . . . . . . . . . . . . . . .–0.5 V to +12.5 V
All other pins (Note 1). . . . . . . . . . . . . . . . . . . . . –0.5 V to V +0.5 V
CC
Output Short Circuit Current (Note 3). . . . . . . . . . . . . . . . . . . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may overshoot VSS
to –2.0 V for periods of up to 20 ns. See Figure 8, on page 45. Maximum DC voltage on input or I/O pins is VCC +0.5
V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 9,
on page 45.
2. Minimum DC input voltage on pins A9, OE#, and RESET# is -0.5 V. During voltage transitions, A9, OE#, and
RESET# may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 8, on page 45. Maximum DC input
voltage on pin A9 is +12.5 V which may overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these or any other conditions above those indicated in the op-
erational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for
extended periods may affect device reliability.
20 ns
20 ns
20 ns
VCC
+2.0 V
+0.8 V
VCC
–0.5 V
–2.0 V
+0.5 V
2.0 V
20 ns
20 ns
Figure 8. Maximum Negative
Overshoot Waveform
Figure 9. Maximum Positive Overshoot Waveform
Operating Ranges
Industrial (I) Devices
Ambient Temperature (T ) . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
A
VCC Supply Voltages
V
for standard voltage range . . . . . . . . . . . . . . . . . . . . . . . .2.7 V to 3.6 V
CC
Operating ranges define those limits between which the functionality of the device is
guaranteed.
June 13, 2005 S29AL032D_00_A3
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45
A d v a n c e I n f o r m a t i o n
DC Characteristics
CMOS Compatible
Parameter
Description
Input Load Current (Note 7)
A9 Input Load Current
Test Conditions
= V to V
Min
Typ
Max
1.0
35
Unit
µA
V
V
,
CC
IN
CC
SS
I
I
I
LI
= V
CC max
V
= V
; A9 = 12.5 V
µA
LIT
LO
CC
CC max
V
V
= V to V
SS
CC max
,
CC
OUT
Output Leakage Current
1.0
µA
= V
CC
10 MHz
5 MHz
1 MHz
10 MHz
5 MHz
1 MHz
15
9
30
16
4
CE# = V OE#
IL,
V
V
=
=
IH,
IH,
Byte Mode
2
V
Active Read Current
CC
I
mA
CC1
(Notes 1, 2)
18
9
35
16
4
CE# = V OE#
IL,
Word Mode
2
V
Active Write Current
CC
I
I
I
CE# = V OE# = V
IH
15
0.2
0.2
35
5
mA
µA
µA
CC2
CC3
CC4
IL,
(Notes 2, 3, 5)
V
Standby Current (Notes 2, 4)
Standby Current During Reset
CE#, RESET# = V
0.3 V
CC
CC
V
CC
RESET# = V
0.3 V
5
SS
(Notes 2, 4)
Automatic Sleep Mode
(Notes 2, 4, 6)
V
V
= V
0.3 V;
0.3 V
IH
IL
CC
SS
I
I
0.2
5
µA
CC5
ACC
= V
ACC pin
5
10
30
mA
mA
V
ACC Accelerated Program Current,
Word or Byte
CE# = V , OE# = V
IL
IH
V
pin
15
CC
V
V
Input Low Voltage
Input High Voltage
–0.5
0.8
IL
0.7 x V
V + 0.3
CC
V
IH
CC
Voltage for WP#/ACC Sector Protect/
Unprotect and Program Acceleration
V
V
V
V
= 3.0 V 10%
= 3.3 V
11.5
11.5
12.5
V
V
HH
ID
CC
Voltage for Autoselect and Temporary
Sector Unprotect
12.5
0.45
CC
V
V
V
V
Output Low Voltage
I
I
I
= 4.0 mA, V = V
CC min
V
V
V
V
OL
OL
OH
OH
CC
= -2.0 mA, V = V
2.4
OH1
OH2
LKO
CC
CC min
CC min
Output High Voltage
= -100 µA, V = V
V
–0.4
CC
CC
Low V Lock-Out Voltage (Note 4)
2.3
2.5
CC
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. At extended temperature range (>+85°C), typical current is 5 µA and maximum current is 10 µA.
5. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep
mode current is 200 nA.
6. Not 100% tested.
7. On the ACC pin only, the maximum input load current when ACC = VIL is ±5.0 µA.
46
S29AL032D
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A d v a n c e I n f o r m a t i o n
DC Characteristics
Zero Power Flash
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 10. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
10
8
3.6 V
2.7 V
6
4
2
0
1
2
3
4
5
Frequency in MHz
Note: T = 25 °C
Figure 11. Typical ICC1 vs. Frequency
June 13, 2005 S29AL032D_00_A3
S29AL032D
47
A d v a n c e I n f o r m a t i o n
Test Conditions
3.3 V
2.7 kΩ
Device
Under
Test
C
6.2 kΩ
L
Note: Diodes are IN3064 or equivalent
Figure 12. Tes t Se tup
Table 19. Test Specifications
Speed Option
Output Load
70
90
Unit
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
30
100
5
pF
Input Rise and Fall Times
Input Pulse Levels
ns
V
0.0 or VCC
Input timing measurement
reference levels
0.5 VCC
0.5 VCC
V
V
Output timing measurement
reference levels
48
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
Key to Switching Waveforms
Waveform
Inputs
Outputs
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Does Not Apply
Changing, State Unknown
Center Line is High Impedance State (High Z)
VCC
0.0 V
0.5 VCC
0.5 VCC
Input
Measurement Level
Output
Figure 13. Input Waveforms and Measurement Levels
June 13, 2005 S29AL032D_00_A3
S29AL032D
49
A d v a n c e I n f o r m a t i o n
AC Characteristics
Read Operations
Parameter
Speed Options
JEDEC
Std
Description
Test Setup
70
90
Unit
tAVAV
tRC
Read Cycle Time (Note 1)
Min
70
90
ns
CE# = VIL
OE# = VIL
tAVQV
tACC
Address to Output Delay
Max
70
90
ns
tELQV
tGLQV
tEHQZ
tGHQZ
tCE
tOE
tDF
tDF
Chip Enable to Output Delay
OE# = VIL
Max
Max
Max
Max
Min
70
30
25
25
90
35
30
30
ns
ns
ns
ns
ns
ns
Output Enable to Output Delay
Chip Enable to Output High Z (Note 1)
Output Enable to Output High Z (Note 1)
Read
0
Output Enable
tOEH
Hold Time (Note 1)
Toggle and Data# Polling
Min
10
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First (Note 1)
tAXQX
tOH
Min
0
ns
Notes:
1. Not 100% tested.
2. See Figure 12, on page 48 and Table 19 on page 48 for test specifications.
tRC
Addresses Stable
tACC
Addresses
CE#
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0 V
Figure 14. Read Operations Timings
50
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
AC Characteristics
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
Test Setup
Max
All Speed Options
Unit
RESET#Pin Low (During Embedded Algorithms)
to Read or Write (See Note)
tREADY
20
µs
RESET# Pin Low (NOT During Embedded
Algorithms) to Read or Write (See Note)
tREADY
Max
500
ns
tRP
tRH
tRPD
tRB
RESET# Pulse Width
Min
Min
Min
Min
500
50
20
0
ns
ns
µs
ns
RESET# High Time Before Read (See Note)
RESET# Low to Standby Mode
RY/BY# Recovery Time
Note: Not 100% tested.
RY/BY#
CE#, OE#
RESET#
tRH
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRH
tRP
Figure 15. RESET# Timings
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51
A d v a n c e I n f o r m a t i o n
AC Characteristics
Word/Byte Configuration (BYTE#) (Models 03, 04 Only)
Parameter
JEDEC Std
tELFL/ ELFH
tFLQZ
tFHQV
Speed Options
Description
70
90
Unit
ns
t
CE# to BYTE# Switching Low or High
BYTE# Switching Low to Output HIGH Z
BYTE# Switching High to Output Active
Max
Max
Min
5
25
70
30
90
ns
ns
CE#
OE#
BYTE#
tELFL
Data Output
(DQ0–DQ14)
Data Output
(DQ0–DQ7)
BYTE#
DQ0–DQ14
Switching
from word
to byte
Address
Input
DQ15
Output
mode
DQ15/A-1
BYTE#
tFLQZ
tELFH
BYTE#
Switching
from byte
to word
Data Output
(DQ0–DQ7)
Data Output
DQ0–DQ14
DQ15/A-1
(DQ0–DQ14)
mode
Address
Input
DQ15
Output
tFHQV
Figure 16. BYTE# Timings for Read Operations
52
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
AC Characteristics
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tSET
(tAS
)
tHOLD (tAH
)
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 17. BYTE# Timings for Write Operations
June 13, 2005 S29AL032D_00_A3
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53
A d v a n c e I n f o r m a t i o n
Erase/Program Operations
Parameter
Speed Options
JEDEC
tAVAV
Std
tWC
tAS
Description
70
90
Unit
ns
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Min
Min
Min
Min
Min
Min
70
90
tAVWL
tWLAX
tDVWH
tWHDX
0
ns
tAH
45
35
45
45
ns
tDS
tDH
tOES
ns
Data Hold Time
0
0
ns
Output Enable Setup Time
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHWL
tGHWL
Min
0
ns
tELWL
tWHEH
tWLWH
tWHWL
tCS
tCH
CE# Setup Time
Min
Min
Min
Min
Min
Typ
Typ
0
0
ns
ns
ns
ns
ns
CE# Hold Time
tWP
Write Pulse Width
35
35
tWPH
tSR/W
Write Pulse Width High
Latency Between Read and Write Operations
30
20
9
Byte
tWHWH1
tWHWH1 Programming Operation (Note 2)
µs
µs
Word
11
Accelerated Programming Operation, Word or Byte (Note
2)
tWHWH1
tWHWH2
tWHWH1
Typ
7
tWHWH2 Sector Erase Operation (Note 2)
Typ
Min
Min
Max
0.7
50
0
sec
µs
ns
tVCS
tRB
VCC Setup Time (Note 1)
Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
tBUSY
90
ns
Notes:
1. Not 100% tested.
2. See Erase and Programming Performance on page 62 for more information.
54
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
AC Characteristics
Program Command Sequence (last two cycles)
Read Status Data (last two cycles)
tAS
tWC
Addresses
555h
PA
PA
PA
tAH
CE#
OE#
tCH
tWHWH1
tWP
WE#
Data
tWPH
tCS
tDS
tDH
PD
DOUT
A0h
Status
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 18. Program Operation Timings
June 13, 2005 S29AL032D_00_A3
S29AL032D
55
A d v a n c e I n f o r m a t i o n
AC Characteristics
Erase Command Sequence (last two cycles)
Read Status Data
tAS
SA
tWC
VA
VA
Addresses
CE#
2AAh
555h for chip erase
tAH
tCH
OE#
tWP
WE#
tWPH
tWHWH2
tCS
tDS
tDH
In
Data
Complete
55h
30h
Progress
10 for Chip Erase
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status on
page 39).
2. Illustration shows device in word mode.
Figure 19. Chip/Sector Erase Operation Timings
t
t
WC
RC
Addresses
PA
PA
PA
PA
t
t
ACC
t
AH
CPH
t
CE
CE#
OE#
t
CP
t
OE
t
GHWL
t
SR/W
t
WP
t
t
WE#
Data
DF
t
WDH
DS
t
OH
t
DH
Valid
In
Valid
Out
Valid In
Valid Out
Figure 20. Back to Back Read/Write Cycle Timing
56
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
AC Characteristics
tRC
VA
Addresses
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
WE#
tOEH
tDF
tOH
High Z
High Z
DQ7
Valid Data
Complement
Complement
True
DQ0–DQ6
Status Data
True
Valid Data
Status Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and
array data read cycle.
Figure 21. Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
CE#
VA
tACC
tCE
VA
VA
VA
tCH
tOE
OE#
WE#
tOEH
tDF
tOH
High Z
DQ6/DQ2
RY/BY#
Valid Status
(first read)
Valid Status
Valid Status
Valid Data
(second read)
(stops toggling)
tBUSY
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last
status read cycle, and array data read cycle.
Figure 22. Toggle Bit Timings (During Embedded Algorithms)
June 13, 2005 S29AL032D_00_A3
S29AL032D
57
A d v a n c e I n f o r m a t i o n
AC Characteristics
Enter
Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
Resume
Erase Erase Suspend
Erase
Suspend
Program
Erase
Complete
WE#
Erase
Erase Suspend
Read
Read
DQ6
DQ2
Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 23. DQ2 vs. DQ6 for Erase and Erase Suspend Operations
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
Min
500
ns
RESET# Setup Time for Temporary Sector
Unprotect
tRSP
4
µs
Note: Not 100% tested.
12 V
RESET#
0 or 3 V
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
RY/BY#
Figure 24. Temporary Sector Unprotect/Timing Diagram
58
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
AC Characteristics
VHH
VIL or VIH
VIL or VIH
WP#/ACC
tVHH
Figure 25. Accelerated Program Timing Diagram
tVHH
V
V
ID
IH
RESET#
SA, A6,
A1, A0
Valid*
Sector Protect/Unprotect
60h 60h
Valid*
Valid*
Status
Verify
40h
Data
Sector Protect: 150 µs
Sector Unprotect: 15 ms
1 µs
CE#
WE#
OE#
Note: For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 26. Sector Protect/Unprotect Timing Diagram
June 13, 2005 S29AL032D_00_A3
S29AL032D
59
A d v a n c e I n f o r m a t i o n
AC Characteristics
Alternate CE# Controlled Erase/Program Operations
Parameter
JEDEC
Speed Options
Std
tWC
tAS
Description
70
90
Unit
ns
tAVAV
tAVEL
tELAX
tDVEH
tEHDX
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Min
Min
Min
Min
Min
Min
70
90
0
ns
tAH
45
35
45
45
ns
tDS
tDH
tOES
ns
Data Hold Time
0
0
ns
Output Enable Setup Time
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHEL
tGHEL
Min
0
ns
tWLEL
tEHWH
tELEH
tEHEL
tWS
tWH
WE# Setup Time
Min
Min
Min
Min
Min
Typ
Typ
0
0
ns
ns
ns
ns
ns
WE# Hold Time
tCP
CE# Pulse Width
35
35
tCPH
tSR/W
CE# Pulse Width High
Latency Between Read and Write Operations
30
20
9
Byte
Programming Operation (Note 2)
Word
tWHWH1
tWHWH1
µs
11
Accelerated Programming Operation,
Word or Byte (Note 2)
tWHWH1
tWHWH2
tWHWH1
tWHWH2
Typ
Typ
7
µs
Sector Erase Operation (Note 2)
0.7
sec
Notes:
1. Not 100% tested.
2. See the Erase and Programming Performance on page 62 section for more information.
60
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
AC Characteristics
555 for program
PA for program
2AA for erase
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tWH
tAS
tAH
WE#
OE#
tGHEL
tWHWH1 or 2
tCP
CE#
Data
tWS
tCPH
tDS
tBUSY
tDH
DQ7#
DOUT
tRH
A0 for program
55 for erase
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data
written to the device.
2. Figure indicates the last two bus cycles of the command sequence.
3. Word mode address used as an example.
Figure 27. Alternate CE# Controlled Write Operation Timings
June 13, 2005 S29AL032D_00_A3
S29AL032D
61
A d v a n c e I n f o r m a t i o n
Erase and Programming Performance
Parameter
Typ (Note 1)
Max (Note 2)
Unit
s
Comments
Sector Erase Time
Chip Erase Time
0.7
45
9
10
Excludes 00h programming
prior to erasure (Note 4)
s
Byte Programming Time
Word Programming Time
300
360
µs
µs
11
Accelerated Byte/Word Programming
Time
Excludes system level
overhead (Note 5)
7
210
µs
Byte Mode
Word Mode
36
24
108
72
s
s
Chip Programming Time
(Note 3)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, VCC = 3.0 V, 100,000 cycles, checkerboard
data pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
bytes program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See Table 17 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.
TSOP and BGA Pin Capacitance
Parameter
Symbol
Parameter Description
Test Setup
Package
TSOP
BGA
Typ
6
Max
7.5
5.0
12
Unit
pF
CIN
Input Capacitance
VIN = 0
4.2
8.5
5.4
7.5
3.9
pF
TSOP
BGA
pF
COUT
Output Capacitance
VOUT = 0
VIN = 0
6.5
9
pF
TSOP
BGA
pF
CIN2
Control Pin Capacitance
4.7
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
62
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
Physical Dimensions
TS040—40-Pin Standard TSOP
Dwg rev AA; 10/99
June 13, 2005 S29AL032D_00_A3
S29AL032D
63
A d v a n c e I n f o r m a t i o n
Physical Dimensions
TS 048—48-Pin Standard TSOP
2X
0.10
STANDARD PIN OUT (TOP VIEW)
2X (N/2 TIPS)
0.10
2X
2
0.10
5
A2
1
N
REVERSE PIN OUT (TOP VIEW)
3
SEE DETAIL B
A
B
1
N
E
N
2
N
2
+1
e
9
5
D1
A1
N
+1
N
2
4
2
D
0.25
B
C
2X (N/2 TIPS)
SEATING
PLANE
A
B
SEE DETAIL A
0.08MM (0.0031")
M
C
A - B S
b
6
7
WITH PLATING
c1
(c)
7
b1
BASE METAL
SECTION B-B
R
(c)
e/2
GAUGE PLANE
0.25MM (0.0098") BSC
θ°
PARALLEL TO
SEATING PLANE
X
C
L
X = A OR B
DETAIL A
DETAIL B
NOTES:
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
(DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982)
MO-142 (D) DD
Jedec
1
2
3
4
MIN
NOM MAX
1.20
Symbol
PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE UP).
A
A1
A2
b1
b
c1
c
D
PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN), INK OR LASER MARK.
0.15
0.05
0.95
0.17
0.17
0.10
0.10
1.00
0.20
1.05
0.23
0.27
0.16
0.21
TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS DEFINED AS THE PLANE OF
CONTACT THAT IS MADE WHEN THE PACKAGE LEADS ARE ALLOWED TO REST FREELY ON A FLAT
HORIZONTAL SURFACE.
0.22
5
6
DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD PROTUSION IS
0.15mm (.0059") PER SIDE.
19.80 20.00 20.20
18.30 18.40 18.50
11.90 12.00 12.10
DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR PROTUSION SHALL BE
0.08 (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX. MATERIAL CONDITION. MINIMUM SPACE
BETWEEN PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 (0.0028").
D1
E
e
7
THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10MM (.0039") AND
0.25MM (0.0098") FROM THE LEAD TIP.
0.50 BASIC
L
0
R
N
0.50
0˚
0.60
0.70
8˚
8
9
LEAD COPLANARITY SHALL BE WITHIN 0.10mm (0.004") AS MEASURED FROM THE SEATING PLANE.
DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
0.08
0.20
48
* For reference only. BSC is an ANSI standard for Basic Space Centering.
64
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
Physical Dimensions
VBN048—48-Ball Fine-Pitch Ball Grid Array (FBGA)
10.0 x 6.0 mm
D1
A
D
e
6
5
4
3
2
1
e
7
SE
E1
E
Ø0.50
H
G
F
E
D
C
B
A
B
A1 CORNER
+0.20
-0.50
7
6
SD
1.00
A1 ID.
Øb
Ø0.08
Ø0.15
M
C
M
C A B
0.10
0.08
C
A2
A
SEATING PLANE
C
C
A1
NOTES:
PACKAGE
JEDEC
VBN 048
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
N/A
10.00 mm x 6.00 mm NOM
PACKAGE
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
SYMBOL
MIN
---
NOM
MAX
1.00
---
NOTE
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
A
A1
A2
D
---
---
OVERALL THICKNESS
BALL HEIGHT
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
0.17
0.62
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
---
0.73
BODY THICKNESS
BODY SIZE
10.00 BSC.
6.00 BSC.
5.60 BSC.
4.00 BSC.
8
N IS THE TOTAL NUMBER OF SOLDER BALLS.
E
BODY SIZE
6
7
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
D1
E1
MD
ME
N
BALL FOOTPRINT
BALL FOOTPRINT
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
ROW MATRIX SIZE D DIRECTION
ROW MATRIX SIZE E DIRECTION
TOTAL BALL COUNT
6
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
48
φb
0.35
---
0.45
BALL DIAMETER
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
e
0.80 BSC.
0.40 BSC.
NONE
BALL PITCH
SD / SE
SOLDER BALL PLACEMENT
DEPOPULATED SOLDER BALLS
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
3425\ 16-038.25
June 13, 2005 S29AL032D_00_A3
S29AL032D
65
A d v a n c e I n f o r m a t i o n
Revision Summary
Revision A (January 31, 2005)
Initial Release.
Revision A1 (March 16, 2005)
Distinctive Characteristics
Revised Secured Silicon Sector with 128-word information
Common Flash Memory Interface — (CFI)
Modified Primary Vendor-Specific Extended Query table information for 45h address
Revision A2 (April 19, 2005)
Valid Combinations Table
Clarified available packing types for TSOP and FBGA packages
Modified note 1
Device Bus Operations
Added Secured Silicon Sector Addresses—Model 00 table
Modified Top Boot Secured Silicon Sector Addresses—Model 03 and Bottom Boot Secured Silicon
Sector Addresses—Model 04 tables
S29AL032D Command Definitions Model 00 — table
Added Secured Silicon Sector Factory Protect information
Accelerated Program Operation
Added section
Write Protect (WP#) — Models 03, 04 Only
Added section
Secured Silicon Sector
Added section
AC Characteristics
Added ACC programming timing diagram
Revision A3 (June 13, 2005)
Autoselect Mode
Updated Table 8 to include models 00, 03, and 04.
Common Flash Memory Interface
Updated table headings in table 12, 13, 14, and 15.
Absolute Maximum Rating
Updated figure 8.
DC Characteristics
Updated CMOS Compatible table.
AC Characteristics
Updated Erase/Program Operations table.
Added new figure: Back-to-Back Read/Write Cycle Timing.
Updated Alternate CE# Controlled Erase/Program Operations table.
66
S29AL032D
S29AL032D_00_A3 June 13, 2005
A d v a n c e I n f o r m a t i o n
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary
industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that
includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal
injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control,
medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and
artificial satellite). Please note that Spansion LLC will not be liable to you and/or any third party for any claims or damages arising in connection with above-
mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such
failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels
and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on ex-
port under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the
prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a Spansion LLC product under development
by Spansion LLC. Spansion LLC reserves the right to change or discontinue work on any product without notice. The information in this document is provided
as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement
of third-party rights, or any other warranty, express, implied, or statutory. Spansion LLC assumes no liability for any damages of any kind arising out of the
use of the information in this document.
Copyright ©2004-2005 Spansion LLC. All rights reserved. Spansion, the Spansion logo, and MirrorBit are trademarks of Spansion LLC. Other company and
product names used in this publication are for identification purposes only and may be trademarks of their respective companies
June 13, 2005 S29AL032D_00_A3
S29AL032D
67
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