S71PL127JB0BFW9Z_技术文档

S71PL254/127/064/032J based

MCPs

Stacked Multi-Chip Product (MCP) Flash Memory and

RAM

128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only

Simultaneous Operation Page Mode Flash Memory and

64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static

RAM/Pseudo Static RAM

ADVANCE

Distinctive Characteristics

Packages

— 7 x 9 x 1.2 mm 56 ball FBGA

MCP Features

Power supply voltage of 2.7 to 3.1 volt

— 8 x 11.6 x 1.2 mm 64 ball FBGA

— 8 x 11.6 x 1.4 mm 84 ball FBGA

Operating Temperature

— –25°C to +85°C

High performance

— 55 ns

— 65 ns (65 ns Flash, 70ns pSRAM)

— –40°C to +85°C

General Description

The S71PL series is a product line of stacked Multi-Chip Product (MCP) packages

and consists of:

One or more S29PL (Simultaneous Read/Write) Flash memory die

pSRAM or SRAM

The 256Mb Flash memory consists of two S29PL127J devices. In this case, CE#f2

is used to access the second Flash and no extra address lines are required.

The products covered by this document are listed in the table below:

Flash Memory Density

32Mb

64Mb

128Mb

256Mb

4Mb

8Mb

S71PL032J40

S71PL032J80

S71PL032JA0

S71PL064J80

S71PL064JA0

S71PL064JB0

pSRAM

Density

16Mb

32Mb

64Mb

S71PL127JA0

S71PL127JB0

S71PL127JC0

S71PL254JB0

S71PL254JC0

Flash Memory Density

32Mb

64Mb

4Mb

8Mb

S71PL032J04

S71PL032J08

SRAM Density (Note)

S71PL064J08

Note: Not recommended for new designs; use pSRAM based MCPs instead.

Publication Number S71PL254/127/064/032J_00 Revision A Amendment 3 Issue Date June 16, 2004

P r e l i m i n a r y

Product Selector Guide

32 Mb Flash Memory

Device-Model#

S71PL032J04-0B

S71PL032J04-0F

S71PL032J08-07

S71PL032J40-07

S71PL032J80-05

S71PL032J80-07

S71PL032JA0

Flash Access time (ns) (p)SRAM density (p)SRAM Access time (ns) pSRAM type Package

65

55

65

4 M SRAM

70

55

70

SRAM2

SRAM3

TLC056

8 M SRAM

SRAM1

4 M pSRAM

8 M pSRAM

16Mb pSRAM

pSRAM1

64 Mb Flash Memory

Device-Model#

S71PL064J08-0K

S71PL064J08-0P

S71PL064J80-05

S71PL064J80-07

S71PL064JA0-05

S71PL064JA0-07

S71PL064JA0-0Z

S71PL064JB0-0U

Flash Access time (ns) (p)SRAM density (p)SRAM Access time (ns)

(p)SRAM type

SRAM1

Package

TLC056

65

55

65

55

65

8 M SRAM

70

55

70

55

70

SRAM2

8 M pSRAM

16 M pSRAM

32 M pSRAM

pSRAM1

pSRAM7

pSRAM6

128 Mb Flash Memory

Device-Model#

S71PL127JA0-9P

S71PL127JB0-9P

S71PL127JB0-9U

S71PL127JC0-9P

S71PL127JC0-9U

Flash Access time (ns)

pSRAM density

16 M pSRAM

32 M pSRAM

64 M pSRAM

pSRAM Access time (ns) pSRAM type Package

65

70

pSRAM7

pSRAM6

pSRAM7

pSRAM6

TLA064

256 Mb Flash Memory (2xS29PL127J)

Device-Model#

S71PL254JB0-T7

S71PL254JB0-TU

S71PL254JC0-TU

S71PL254JC0-TZ

Flash Access time (ns)

pSRAM density

32 M pSRAM

64 M pSRAM

pSRAM Access time (ns) pSRAM type Package

65

70

pSRAM1

pSRAM6

pSRAM7

FTA084

2

S71PL254/127/064/032J based MCPs

S71PL254/127/064/032J_00A3 June 16, 2004

A d v a n c e I n f o r m a t i o n

Protection/Unprotection ...................................................... 47

Table 11. PL032J Boot Sector/Sector Block Addresses for

S71PL254/127/064/032J based MCPs

Distinctive Characteristics . . . . . . . . . . . . . . . . . . . 1

MCP Features ........................................................................................................ 1

General Description . . . . . . . . . . . . . . . . . . . . . . . . 1

Product Selector Guide . . . . . . . . . . . . . . . . . . . . . .2

32 Mb Flash Memory ............................................................................................2

64 Mb Flash Memory ............................................................................................2

128 Mb Flash Memory ..........................................................................................2

256 Mb Flash Memory (2xS29PL127J) ..............................................................2

Connection Diagram (S71PL032J) . . . . . . . . . . . . . .8

Connection Diagram (S71PL064J) . . . . . . . . . . . . . .9

Connection Diagram (S71PL127J) . . . . . . . . . . . . . 10

Connection Diagram (S71PL254J) . . . . . . . . . . . . . 11

Special Handling Instructions For FBGA Package .................................. 11

Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 13

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . 18

TLC056—56-ball Fine-Pitch Ball Grid Array (FBGA)

9 x 7 mm Package ............................................................................................... 18

TLA064—64-ball Fine-Pitch Ball Grid Array (FBGA)

Protection/Unprotection ...................................................... 48

Selecting a Sector Protection Mode .............................................................48

Table 12. Sector Protection Schemes ................................... 49

Persistent Sector Protection . . . . . . . . . . . . . . . . 49

Persistent Protection Bit (PPB) ......................................................................49

Persistent Protection Bit Lock (PPB Lock) .................................................50

Persistent Sector Protection Mode Locking Bit ........................................51

Password Protection Mode . . . . . . . . . . . . . . . . . . 51

Password and Password Mode Locking Bit ................................................52

64-bit Password ..................................................................................................52

Write Protect (WP#) ....................................................................................... 53

Persistent Protection Bit Lock ................................................................... 53

High Voltage Sector Protection ..................................................................... 53

Figure 1. In-System Sector Protection/Sector Unprotection

Algorithms........................................................................ 54

Temporary Sector Unprotect ........................................................................ 55

Figure 2. Temporary Sector Unprotect Operation ................... 55

SecSi™ (Secured Silicon) Sector Flash Memory Region .......................... 55

Factory-Locked Area (64 words) .............................................................. 55

Customer-Lockable Area (64 words) ......................................................56

SecSi Sector Protection Bits .......................................................................56

Figure 3. SecSi Sector Protect Verify.................................... 57

Hardware Data Protection ............................................................................. 57

Low VCC Write Inhibit ................................................................................ 57

Write Pulse “Glitch” Protection ............................................................... 57

Logical Inhibit ................................................................................................... 57

Power-Up Write Inhibit ............................................................................... 57

8 x 11.6 mm Package ........................................................................................... 19

FTA084—84-ball Fine-Pitch Ball Grid Array (FBGA)

8 x 11.6 mm ........................................................................................................... 20

S29PL127J/S29PL064J/S29PL032J for MCP

General Description . . . . . . . . . . . . . . . . . . . . . . . 23

Simultaneous Read/Write Operation with Zero Latency ......................23

Page Mode Features ...........................................................................................23

Standard Flash Memory Features ...................................................................23

Product Selector Guide . . . . . . . . . . . . . . . . . . . . .25

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Simultaneous Read/Write Block Diagram . . . . . 27

Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . .28

Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Device Bus Operations . . . . . . . . . . . . . . . . . . . . . .29

Table 1. PL127J Device Bus Operations ................................ 29

Requirements for Reading Array Data ........................................................ 29

Random Read (Non-Page Read) ............................................................... 29

Page Mode Read ............................................................................................. 30

Table 2. Page Select .......................................................... 30

Simultaneous Read/Write Operation .......................................................... 30

Table 3. Bank Select .......................................................... 30

Writing Commands/Command Sequences ..................................................31

Accelerated Program Operation ................................................................31

Autoselect Functions ......................................................................................31

Automatic Sleep Mode ......................................................................................32

RESET#: Hardware Reset Pin .........................................................................32

Output Disable Mode ........................................................................................32

Table 4. PL127J Sector Architecture ..................................... 33

Table 5. PL064J Sector Architecture ..................................... 40

Table 6. PL032J Sector Architecture ..................................... 43

Table 7. SecSiTM Sector Addresses ...................................... 44

Autoselect Mode .................................................................................................45

Table 8. Autoselect Codes (High Voltage Method) .................. 45

Table 9. PL127J Boot Sector/Sector Block Addresses for Protection/

Unprotection ..................................................................... 46

Table 10. PL064J Boot Sector/Sector Block Addresses for

Common Flash Memory Interface (CFI) . . . . . . 58

Table 13. CFI Query Identification String .............................. 58

Table 14. System Interface String ........................................ 59

Table 15. Device Geometry Definition ................................... 59

Table 16. Primary Vendor-Specific Extended Query ................ 60

Command Definitions . . . . . . . . . . . . . . . . . . . . . . 62

Reading Array Data ...........................................................................................62

Reset Command .................................................................................................62

Autoselect Command Sequence ....................................................................63

Enter SecSi™ Sector/Exit SecSi Sector Command Sequence ................ 63

Word Program Command Sequence ...........................................................63

Unlock Bypass Command Sequence ........................................................64

Figure 4. Program Operation............................................... 65

Chip Erase Command Sequence ...................................................................65

Sector Erase Command Sequence ................................................................66

Figure 5. Erase Operation................................................... 67

Erase Suspend/Erase Resume Commands ..................................................67

Password Program Command .......................................................................68

Password Verify Command .............................................................................68

Password Protection Mode Locking Bit Program Command ..............68

Persistent Sector Protection Mode Locking Bit Program Command 69

SecSi Sector Protection Bit Program Command ......................................69

PPB Lock Bit Set Command ............................................................................69

DYB Write Command ......................................................................................69

Password Unlock Command ..........................................................................69

PPB Program Command ..................................................................................70

All PPB Erase Command ..................................................................................70

DYB Write Command ......................................................................................70

PPB Lock Bit Set Command ............................................................................70

Command ..............................................................................................................71

Command Definitions Tables ..........................................................................71

Table 17. Memory Array Command Definitions ...................... 71

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A d v a n c e I n f o r m a t i o n

Table 18. Sector Protection Command Definitions .................. 72

DC Characteristics (4Mb pSRAM Asynchronous) . .

Write Operation Status . . . . . . . . . . . . . . . . . . . . 73

DQ7: Data# Polling ............................................................................................73

Figure 6. Data# Polling Algorithm......................................... 74

DQ6: Toggle Bit I ................................................................................................75

Figure 7. Toggle Bit Algorithm.............................................. 76

DQ2: Toggle Bit II ...............................................................................................76

Reading Toggle Bits DQ6/DQ2 ......................................................................76

DQ5: Exceeded Timing Limits ........................................................................77

DQ3: Sector Erase Timer .................................................................................77

Table 19. Write Operation Status ......................................... 78

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . .79

Figure 8. Maximum Overshoot Waveforms............................. 79

Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . .80

Industrial (I) Devices .........................................................................................80

Extended (E) Devices ........................................................................................80

Supply Voltages ...................................................................................................80

97

DC Characteristics (8Mb pSRAM Asynchronous) . .

98

DC Characteristics (16Mb pSRAM Asynchronous) .

99

DC Characteristics (16Mb pSRAM Page Mode) . 100

DC Characteristics (32Mb pSRAM Page Mode) 101

DC Characteristics (64Mb pSRAM Page Mode) 102

Timing Test Conditions . . . . . . . . . . . . . . . . . . . . 102

Output Load Circuit .........................................................................................103

Figure 23. Output Load Circuit........................................... 103

Power Up Sequence . . . . . . . . . . . . . . . . . . . . . . . 103

AC Characteristics (4Mb pSRAM Page Mode) . 104

AC Characteristics (8Mb pSRAM Asynchronous) . .

106

AC Characteristics (16Mb pSRAM Asynchronous) .

108

AC Characteristics (16Mb pSRAM Page Mode) . 110

AC Characteristics (32Mb pSRAM Page Mode) .112

AC Characteristics (64Mb pSRAM Page Mode) 114

Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . 115

Read Cycle ............................................................................................................115

Figure 24. Timing of Read Cycle (CE# = OE# = V_IL, WE# = ZZ# =

DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 81

Table 20. CMOS Compatible ................................................ 81

AC Characteristic . . . . . . . . . . . . . . . . . . . . . . . . . .82

Test Conditions .................................................................................................. 82

Figure 9. Test Setups......................................................... 82

Table 21. Test Specifications ............................................... 82

SWITCHING WAVEFORMS ..........................................................................83

Table 22. KEY TO SWITCHING WAVEFORMS ......................... 83

Figure 10. Input Waveforms and Measurement Levels............. 83

VCC RampRate ...................................................................................................83

Read Operations ................................................................................................ 84

Table 23. Read-Only Operations .......................................... 84

Figure 11. Read Operation Timings....................................... 84

Figure 12. Page Read Operation Timings ............................... 85

Reset ...................................................................................................................... 85

Table 24. Hardware Reset (RESET#) .................................... 85

Figure 13. Reset Timings..................................................... 86

Erase/Program Operations ............................................................................. 87

Table 25. Erase and Program Operations .............................. 87

Timing Diagrams .................................................................................................88

Figure 14. Program Operation Timings.................................. 88

Figure 15. Accelerated Program Timing Diagram .................... 88

Figure 16. Chip/Sector Erase Operation Timings..................... 89

Figure 17. Back-to-back Read/Write Cycle Timings ................. 89

Figure 18. Data# Polling Timings (During Embedded Algorithms) .

90

V

_IH)............................................................................... 115

Figure 25. Timing Waveform of Read Cycle (WE# = ZZ# = V_IH)...

116

Figure 26. Timing Waveform of Page Mode Read Cycle (WE# = ZZ#

= V_IH)............................................................................ 117

Write Cycle ..........................................................................................................118

Figure 27. Timing Waveform of Write Cycle (WE# Control, ZZ# =

V_IH)............................................................................... 118

Figure 28. Timing Waveform of Write Cycle (CE# Control, ZZ# =

V_IH)............................................................................... 118

Figure 29. Timing Waveform of Page Mode Write Cycle (ZZ# = V_IH

)

119

Power Savings Modes (For 16M Page Mode, 32M and

64M Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119

Partial Array Self Refresh (PAR) ....................................................................119

Temperature Compensated Refresh (for 64Mb) ....................................120

Deep Sleep Mode ..............................................................................................120

Reduced Memory Size (for 32M and 16M) .................................................120

Other Mode Register Settings (for 64M) ...................................................120

Figure 30. Mode Register.................................................. 121

Figure 31. Mode Register UpdateTimings (UB#, LB#, OE# are Don’t

Care)............................................................................. 121

Figure 32. Deep Sleep Mode - Entry/Exit Timings................. 122

Figure 19. Toggle Bit Timings (During Embedded Algorithms) .. 90

Figure 20. DQ2 vs. DQ6...................................................... 91

Protect/Unprotect . . . . . . . . . . . . . . . . . . . . . . . . 91

Table 26. Temporary Sector Unprotect ................................. 91

Figure 21. Temporary Sector Unprotect Timing Diagram.......... 91

Figure 22. Sector/Sector Block Protect and Unprotect Timing

Diagram............................................................................ 92

Controlled Erase Operations ..........................................................................93

Table 27. Alternate CE# Controlled Erase and Program Operations

93

Mode Register Update and Deep Sleep Timings . . .

123

Address Patterns for PASR (A4=1) (64M) . . . . . 123

Deep ICC Characteristics (for 64Mb) . . . . . . . . . 124

Address Patterns for PAR (A3= 0, A4=1) (32M) . 124

Address Patterns for RMS (A3 = 1, A4 = 1) (32M) . . .

124

Table 28. Alternate CE# Controlled Write (Erase/Program)

Operation Timings ............................................................. 94

Table 29. Erase And Programming Performance .................... 95

BGA Pin Capacitance . . . . . . . . . . . . . . . . . . . . . . 95

Low Power ICC Characteristics (32M) . . . . . . . . 125

Address Patterns for PAR (A3= 0, A4=1) (16M) . 125

Address Patterns for RMS (A3 = 1, A4 = 1) (16M) 125

Low Power ICC Characteristics (16M) . . . . . . . . 125

pSRAM Type 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96

Functional Description . . . . . . . . . . . . . . . . . . . . . 96

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . 96

4

S71PL254/127/064/032J_00A3 June 16, 2004

A d v a n c e I n f o r m a t i o n

Figure 48. Power-on Timing .............................................. 143

Type 2 pSRAM

Provisions of Address Skew ...........................................................................144

Read ...................................................................................................................144

Figure 49. Read............................................................... 144

Write .................................................................................................................144

Figure 50. Write .............................................................. 144

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126

Product Information . . . . . . . . . . . . . . . . . . . . . . . 126

Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . 126

Power Up Sequence . . . . . . . . . . . . . . . . . . . . . . . 127

Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . 128

Power Up ............................................................................................................128

Figure 33. Power Up 1 (CS1# Controlled)............................ 128

Figure 34. Power Up 2 (CS2 Controlled) .............................. 128

Functional Description . . . . . . . . . . . . . . . . . . . . 128

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . 129

DC Recommended Operating Conditions . . . . . 129

Capacitance (Ta = 25°C, f = 1 MHz) . . . . . . . . . . 129

DC and Operating Characteristics . . . . . . . . . . . 129

Common ..............................................................................................................129

16M pSRAM .........................................................................................................130

32M pSRAM ........................................................................................................130

64M pSRAM ......................................................................................................... 131

pSRAM Type 7

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146

Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . 146

Functional Description . . . . . . . . . . . . . . . . . . . . . 147

Power Down (for 32M, 64M Only) . . . . . . . . . . . . 147

Power Down .......................................................................................................147

Power Down Program Sequence ................................................................148

Address Key ........................................................................................................148

Absolute Maximum Ratings . . . . . . . . . . . . . . . . 149

Recommended Operating Conditions (See

Warning Below) . . . . . . . . . . . . . . . . . . . . . . . . . . 149

Package Capacitance . . . . . . . . . . . . . . . . . . . . . . 149

DC Characteristics (Under Recommended Condi-

tions Unless Otherwise Noted) . . . . . . . . . . . . . . 150

AC Characteristics (Under Recommended Operat-

ing Conditions Unless Otherwise Noted) . . . . . . .151

Read Operation ..................................................................................................151

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 153

Write Operation ...............................................................................................153

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 154

Power Down Parameters ...............................................................................154

Other Timing Parameters ...............................................................................154

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 155

AC Test Conditions .........................................................................................155

AC Measurement Output Load Circuit .....................................................155

Figure 51. AC Output Load Circuit...................................... 155

Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . 156

AC Operating Conditions . . . . . . . . . . . . . . . . . . 131

Test Conditions (Test Load and Test Input/Output Reference) ........ 131

Figure 35. Output Load ..................................................... 131

ACC Characteristics (Ta = -40°C to 85°C, V = 2.7 to 3.1 V) ........ 132

CC

Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . 133

Read Timings .......................................................................................................133

Figure 36. Timing Waveform of Read Cycle(1)...................... 133

Figure 37. Timing Waveform of Read Cycle(2)...................... 133

Figure 38. Timing Waveform of Read Cycle(2)...................... 133

Write Timings .................................................................................................... 134

Figure 39. Write Cycle #1 (WE# Controlled) ........................ 134

Figure 40. Write Cycle #2 (CS1# Controlled)....................... 134

Figure 41. Timing Waveform of Write Cycle(3) (CS2 Controlled)...

135

Figure 42. Timing Waveform of Write Cycle(4) (UB#, LB#

Controlled)...................................................................... 135

Read Timings .......................................................................................................156

Figure 52. Read Timing #1 (Baisc Timing) .......................... 156

Figure 53. Read Timing #2 (OE# Address Access................. 156

Figure 54. Read Timing #3 (LB#/UB# Byte Access) ............. 157

Figure 55. Read Timing #4 (Page Address Access after CE1#

Control Access for 32M and 64M Only) ............................... 157

Figure 56. Read Timing #5 (Random and Page Address Access for

32M and 64M Only) ......................................................... 158

Write Timings .....................................................................................................158

Figure 57. Write Timing #1 (Basic Timing).......................... 158

Figure 58. Write Timing #2 (WE# Control).......................... 159

Figure 59. Write Timing #3-1 (WE#/LB#/UB# Byte Write Control)

159

Figure 60. Write Timing #3-2 (WE#/LB#/UB# Byte Write Control)

160

Figure 61. Write Timing #3-3 (WE#/LB#/UB# Byte Write Control)

160

Figure 62. Write Timing #3-4 (WE#/LB#/UB# Byte Write Control)

161

Read/Write Timings ...........................................................................................161

Figure 63. Read/Write Timing #1-1 (CE1# Control) ............. 161

Figure 64. Read / Write Timing #1-2 (CE1#/WE#/OE# Control)...

162

pSRAM Type 6

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136

Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . 136

Functional Description . . . . . . . . . . . . . . . . . . . . . 137

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . 137

DC Recommended Operating Conditions (Ta = -

40°C to 85°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137

DC Characteristics (Ta = -40°C to 85°C, VDD = 2.6

to 3.3 V) (See Note 3 to 4) . . . . . . . . . . . . . . . . . . 137

Capacitance (Ta = 25°C, f = 1 MHz) . . . . . . . . . . 138

AC Characteristics and Operating Conditions . 138

(Ta = -40°C to 85°C, VDD = 2.6 to 3.3 V) (See Note 5 to 11) ........... 138

AC Test Conditions . . . . . . . . . . . . . . . . . . . . . . . 139

Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . 140

Read Timings ......................................................................................................140

Figure 43. Read Cycle....................................................... 140

Figure 44. Page Read Cycle (8 Words Access)...................... 141

Write Timings ....................................................................................................142

Figure 45. Write Cycle #1 (WE# Controlled) (See Note 8) ..... 142

Figure 46. Write Cycle #2 (CE# Controlled) (See Note 8) ...... 143

Deep Power-down Timing ............................................................................. 143

Figure 47. Deep Power Down Timing................................... 143

Power-on Timing ............................................................................................... 143

Figure 65. Read / Write Timing #2 (OE#, WE# Control) ....... 162

Figure 66. Read / Write Timing #3 (OE#, WE#, LB#, UB# Control)

163

Figure 67. Power-up Timing #1......................................... 163

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Figure 68. Power-up Timing #2.......................................... 164

4M Version G ..................................................................................................171

DC Operating Characteristics ......................................................................172

8M Version C .................................................................................................172

DC Operating Characteristics ......................................................................172

8M Version D .................................................................................................172

AC Operating Conditions . . . . . . . . . . . . . . . . . . 173

Test Conditions .................................................................................................173

Figure 72. AC Output Load................................................ 173

Figure 69. Power Down Entry and Exit Timing...................... 164

Figure 70. Standby Entry Timing after Read or Write............. 164

Figure 71. Power Down Program Timing (for 32M/64M Only) . 165

SRAM

Common Features . . . . . . . . . . . . . . . . . . . . . . . . 167

Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . 167

Functional Description . . . . . . . . . . . . . . . . . . . . 168

4M Version F, 4M version G, 8M version C .........................................168

Byte Mode ...........................................................................................................168

Functional Description . . . . . . . . . . . . . . . . . . . . 169

8M Version D .................................................................................................169

X means don’t care (must be low or high state). . .

169

Absolute Maximum Ratings (4M Version F) . . 169

Absolute Maximum Ratings (4M Version G, 8M

Version C, 8M Version D) . . . . . . . . . . . . . . . . . 169

DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . 170

Recommended DC Operating Conditions (Note 1) ..............................170

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 173

Read/Write Characteristics (V =2.7-3.3V) .............................................173

CC

Data Retention Characteristics (4M Version F) ......................................174

Data Retention Characteristics (4M Version G) .....................................175

Data Retention Characteristics (8M Version C) .....................................175

Data Retention Characteristics (8M Version D) .....................................175

Timing Diagrams ................................................................................................175

Figure 73. Timing Waveform of Read Cycle(1) (Address Controlled,

CS#1=OE#=V_IL, CS2=WE#=V_IH, UB# and/or LB#=V_IL) ...... 175

Figure 74. Timing Waveform of Read Cycle(2) (WE#=V_IH, if BYTE#

is Low, Ignore UB#/LB# Timing) ....................................... 176

Figure 75. Timing Waveform of Write Cycle(1) (WE# controlled, if

BYTE# is Low, Ignore UB#/LB# Timing)............................. 176

Figure 76. Timing Waveform of Write Cycle(2) (CS# controlled, if

BYTE# is Low, Ignore UB#/LB# Timing)............................. 177

Figure 77. Timing Waveform of Write Cycle(3) (UB#, LB#

Capacitance (f=1MHz, T =25°C) ..................................................................170

A

DC Operating Characteristics ......................................................................170

Common ..........................................................................................................170

DC Operating Characteristics ....................................................................... 171

4M Version F ................................................................................................... 171

DC Operating Characteristics ....................................................................... 171

controlled)...................................................................... 177

Figure 78. Data Retention Waveform.................................. 178

Revision Summary

6

S71PL254/127/064/032J_00A3 June 16, 2004

P r e l i m i n a r y

MCP Block Diagram

V_CC

f

V_CC

CE#f1

WP#/ACC

RESET#

Flash-only Address

Flash 1

Shared Address

OE#

WE#

V_SS

RY/BY#

Flash 2

(Note 2)

CE#f2

(Note 1)

DQ₁₅to DQ₀

V_CCS

V_CC

pSRAM/SRAM

IO₁₅-IO₀

CE#s

UB#s

CE#

UB#

LB#

LB#s

CE2

Notes:

1. For 1 Flash + pSRAM, CE#f1=CE#. For 2 Flash + pSRAM, CE#=CE#f1 and CE#f2 is the chip-enable for the second

Flash.

2. For 256 Mb only, Flash 1 = Flash 2 = S29PL127J.

June 16, 2004 S71PL254/127/064/032J_00A3

7

P r e l i m i n a r y

Connection Diagram (S71PL032J)

56-ball Fine-Pitch Ball Grid Array

(Top View, Balls Facing Down)

Legend

A2

A7

A3

LB#

B3

A4

WP/ACC

B4

A5

WE#

B5

A6

A8

A7

A11

B7

B1

A3

B2

B6

B8

A15

C8

Shared

(Note 1)

A6

UB#

C3

RST#f

C4

CE2s

C5

A19

C6

A12

C7

C1

C2

A2

A5

A18

D3

RY/BY#

A20

A9

A13

D7

RFU

D8

Flash only

RAM only

D1

D2

D6

A1

A4

A17

E3

A10

E6

A14

E7

RFU

E8

E1

E2

A0

VSS

F2

DQ1

F3

DQ6

F6

RFU

F7

A16

F8

F1

F4

DQ3

G4

F5

DQ4

G5

Reserved for

Future Use

CE1#f

G1

OE#

G2

DQ0

H2

DQ9

G3

DQ13

G6

DQ15

G7

RFU

G8

CE1#s

DQ10

H3

VCCf

H4

VCCs

H5

DQ12

H6

DQ7

H7

VSS

DQ8

DQ2

DQ11

RFU

DQ5

DQ14

Notes:

1. May be shared depending on density.

—

A19 is shared for the 16M pSRAM configuration.

A18 is shared for the 8M (p)SRAM and above configurations.

MCP

S71PL032JA0

Flash-only Addresses

A20

Shared Addresses

A19-A0

A18-A0

A17-A0

S71PL032J80

S71PL032J08

S71PL032J40

S71PL032J04

A20-A19

A20-A18

8

S71PL254/127/064/032J_00A3 June 16, 2004

P r e l i m i n a r y

Connection Diagram (S71PL064J)

56-ball Fine-Pitch Ball Grid Array

(Top View, Balls Facing Down)

Legend

A2

A7

A3

LB#

B3

A4

WP/ACC

B4

A5

WE#

B5

A6

A8

A7

A11

B7

B1

A3

B2

B6

B8

A15

C8

Shared

(Note 1)

A6

UB#

C3

RST#f

C4

CE2s

C5

A19

C6

A12

C7

C1

C2

A2

A5

A18

D3

RY/BY#

A20

A9

A13

D7

A21

D8

Flash only

RAM only

D1

D2

D6

A1

A4

A17

E3

A10

E6

A14

E7

RFU

E8

E1

E2

A0

VSS

F2

DQ1

F3

DQ6

F6

RFU

F7

A16

F8

F1

F4

DQ3

G4

F5

DQ4

G5

Reserved for

Future Use

CE1#f

G1

OE#

G2

DQ0

H2

DQ9

G3

DQ13

G6

DQ15

G7

RFU

G8

CE1#s

DQ10

H3

VCCf

H4

VCCs

H5

DQ12

H6

DQ7

H7

VSS

DQ8

DQ2

DQ11

RFU

DQ5

DQ14

Notes:

1. May be shared depending on density.

—

A20 is shared for the 32M pSRAM configuration.

A19 is shared for the 16M pSRAM and above configurations.

A18 is shared for the 8M (p)SRAM and above configurations.

MCP

S71PL064JB0

Flash-only Addresses

A21

Shared Addresses

A20-A0

S71PL064JA0

S71PL064J80

S71PL064J08

A21-A20

A19-A0

A21-A19

A18-A0

A21-A19

A18-A0

June 16, 2004 S71PL254/127/064/032J_00A3

9

A d v a n c e I n f o r m a t i o n

Connection Diagram (S71PL127J)

64-ball Fine-Pitch Ball Grid Array

A1

A10

NC

B5

RFU

B6

RFU

C6

Legend

C3

A7

C4

LB#

D4

C5

C7

A8

C8

A11

D9

WP/ACC

D5

WE#

D6

D2

A3

D10

A15

E9

D3

D7

Shared

(Note 1)

A6

UB#

E4

RST#f

E5

CE2s

E6

A19

E7

A12

E8

E2

A2

E3

A5

A18

F4

RY/BY#

A20

A9

A13

F8

A21

F9

Flash only

RAM only

F2

F3

F7

A1

A4

A17

G4

A10

G7

A14

G8

A22

G9

G2

G3

VSS

H3

A0

DQ1

H4

DQ6

H7

RFU

H8

A16

H9

H2

H5

DQ3

J5

H6

DQ4

J6

Reserved for

Future Use

CE#f

J2

OE#

J3

DQ9

J4

DQ13

J7

DQ15

J8

RFU

J9

CE1#s

DQ0

K3

DQ10

K4

VCCf

K5

VCCs

K6

DQ12

K7

DQ7

K8

VSS

DQ8

DQ2

DQ11

RFU

DQ5

DQ14

L5

L6

VCCf

RFU

M1

NC

M10

NC

Notes:

1. May be shared depending on density.

—

A21 is shared for the 64M pSRAM configuration.

A20 is shared for the 32M pSRAM and above configurations.

A19 is shared for the 16M pSRAM and above configurations.

MCP

S71PL127JC0

Flash-only Addresses

Shared Addresses

A21-A0

A22

S71PL127JB0

S71PL127JA0

A22-A21

A22-A20

A20-A0

A19-A0

10

S71PL254/127/064/032J_00A3 June 16, 2004

A d v a n c e I n f o r m a t i o n

Connection Diagram (S71PL254J)

84-ball Fine-Pitch Ball Grid Array

A1

A10

NC

B2

B3

B4

B5

B6

B7

B8

B9

RFU

CE#F2

RFU

Legend

C2

RFU

D2

C3

A7

C4

LB#

D4

C5

WP/ACC

D5

C6

WE#

D6

C7

A8

C8

A11

D9

C9

RFU

D10

A15

E9

D3

D7

Shared

(Note 1)

A3

A6

UB#

E4

RST#f

E5

CE2s

E6

A19

E7

A12

E8

E2

A2

E3

A5

A18

F4

RY/BY#

H5

A20

H6

A9

A13

F8

A21

F9

Flash only

RAM only

F2

F3

F7

RFU

A1

A4

A17

G4

A10

G7

A14

G8

A22

G9

G2

G3

VSS

H3

H5

RFU

H5

H6

RFU

H6

A0

DQ1

H4

DQ6

H7

RFU

H8

A16

H9

H2

Reserved for

Future Use

CE#f1

J2

OE#

J3

DQ9

J4

DQ3

J5

DQ4

J6

DQ13

J7

DQ15

J8

RFU

J9

CE1#s

K2

DQ0

K3

DQ10

K4

VCCf

K5

VCCs

K6

DQ12

K7

DQ7

K8

VSS

K9

2nd Flash Only

RFU

DQ8

DQ2

DQ11

RFU

DQ5

DQ14

RFU

L2

L3

L4

L5

L6

L7

L8

L9

RFU

VCCf

RFU

M1

NC

M10

NC

Notes:

1. May be shared depending on density.

—

A21 is shared for the 64M pSRAM configuration.

A20 is shared for the 32M pSRAM configuration.

MCP

S71PL254JC0

S71PL254JB0

Flash-only Addresses

Shared Addresses

A21-A0

A22

A22-A21

A20-A0

Special Handling Instructions For FBGA Package

Special handling is required for Flash Memory products in FBGA packages.

Flash memory devices in FBGA packages may be damaged if exposed to ultra-

sonic cleaning methods. The package and/or data integrity may be compromised

if the package body is exposed to temperatures above 150°C for prolonged peri-

ods of time.

June 16, 2004 S71PL254/127/064/032J_00A3

11

P r e l i m i n a r y

Pin Description

A21–A0

DQ15–DQ0

=

22 Address Inputs (Common)

16 Data Inputs/Outputs (Common)

Chip Enable 1 (Flash)

Chip Enable 2 (Flash)

Chip Enable 1 (pSRAM)

Chip Enable 2 (pSRAM)

Output Enable (Common)

Write Enable (Common)

CE1#f

CE#f2

CE1#ps

CE2ps

OE#

WE#

RY/BY#

UB#

LB#

RESET#

WP#/ACC

Ready/Busy Output (Flash 1)

Upper Byte Control (pSRAM)

Lower Byte Control (pSRAM)

Hardware Reset Pin, Active Low (Flash 1)

Hardware Write Protect/Acceleration Pin (Flash)

Flash 3.0 volt-only single power supply (see Product

Selector Guide for speed options and voltage supply

tolerances)

V_CC

f

V_CCps

V_SS

NC

=

pSRAM Power Supply

Device Ground (Common)

Pin Not Connected Internally

Logic Symbol

22

A21–A0

16

CE1f#

DQ15–DQ0

R Y/BY#

CE2f#

CE1#ps

CE2ps

OE#

WE#

WP#/ACC

RESET#

UB#

LB#

12

S71PL254/127/064/032J_00A3 June 16, 2004

P r e l i m i n a r y

Ordering Information

The order number is formed by a valid combinations of the following:

S71PL

127

J

B0 BA

W

9

Z

0

PACKING TYPE

0

2

3

4

=

Tray

7” Tape and Reel

13” Tape and Reel

10” Tape and Reel

MODEL NUMBER

See the Valid Combinations table.

PACKAGE MODIFIER

0

9

T

=

7 x 9 mm, 1.2 mm height, 56 balls (TLC056)

8 x 11.6 mm, 1.2 mm height, 64 balls (TLA056)

8 x 11.6 mm, 1.4 mm height, 84 balls (FTA084)

TEMPERATURE RANGE

W

I

=

Wireless (-25

Industrial (-40

°

C to +85

°

C)

°C to +85

°

PACKAGE TYPE

BA

BF

=

Fine-pitch BGA Lead (Pb)-free compliant package

Fine-pitch BGA Lead (Pb)-free package

pSRAM DENSITY

C0

B0

A0

80

40

08

04

=

64 Mb pSRAM

32 Mb pSRAM

16 Mb pSRAM

8 Mb pSRAM

4 Mb pSRAM

8 Mb SRAM

4 Mb SRAM

PROCESS TECHNOLOGY

110 nm, Floating Gate Technology

J

=

FLASH DENSITY

254

127

064

032

=

256Mb

128Mb

64Mb

32Mb

PRODUCT FAMILY

S71PL Multi-chip Product (MCP)

3.0-volt Simultaneous Read/Write, Page Mode Flash Memory and RAM

June 16, 2004 S71PL254/127/064/032J_00A3

13

P r e l i m i n a r y

S71PL032J Valid Combinations

(p)SRAM

Type/Access

Time (ns)

Base Ordering

Part Number

Package &

Package Modifier/

Model Number

Speed Options

Package

Marking

Temperature

Packing Type

(ns)

S71PL032J04

S71PL032J08

S71PL032J40

S71PL032J80

S71PL032J04

S71PL032J08

S71PL032J40

S71PL032J80

S71PL032J04

S71PL032J08

S71PL032J40

S71PL032J80

S71PL032J04

S71PL032J08

S71PL032J40

S71PL032J80

0B

SRAM2 / 70

SRAM3 / 70

SRAM1 / 70

pSRAM1 / 70

pSRAM1 / 55

SRAM2 / 70

SRAM3 / 70

SRAM1 / 70

pSRAM1 / 70

pSRAM1 / 55

SRAM2 / 70

SRAM3 / 70

SRAM1 / 70

pSRAM1 / 70

pSRAM1 / 55

SRAM2 / 70

SRAM3 / 70

SRAM1 / 70

pSRAM1 / 70

pSRAM1 / 55

0F

0B

65

BAW

BFW

BAI

0, 2, 3, 4 (Note 1)

07

05 (Note 3)

55

0B

0F

0B

65

0, 2, 3, 4 (Note 1)

07

05 (Note 3)

55

(Note 2)

0B

0F

0B

65

07

05 (Note 3)

55

0B

0F

0B

07

65

BFI

07

05 (Note 3)

55

65

BAW, BFW ,

BAI, BFI

S71PL032JA0

07

0F

0, 2, 3, 4 (Note 1)

pSRAM1 / 70

SRAM3 / 70

BAW, BFW ,

BAI, BFI

65

Notes:

Valid Combinations

1. Type 0 is standard. Specify other options as required.

2. BGA package marking omits leading “S” and packing type

designator from ordering part number.

Valid Combinations list configurations planned to be supported in vol-

ume for this device. Consult your local sales office to confirm avail-

ability of specific valid combinations and to check on newly released

combinations.

3. Contact factory for availability.

14

S71PL254/127/064/032J_00A3 June 16, 2004

P r e l i m i n a r y

S71PL064J Valid Combinations

(p)SRAM

Type/Access

Time (ns)

Base Ordering

Part Number

Package &

Package Modifier/

Model Number

Speed Options

(ns)

Package

Marking

Temperature

Packing Type

S71PL064J08

S71PL064J80

S71PL064JA0

S71PL064JB0

S71PL064J80

S71PL064JA0

S71PL064J08

S71PL064J80

S71PL064JA0

S71PL064JB0

S71PL064J80

S71PL064JA0

S71PL064J08

S71PL064J80

S71PL064JA0

S71PL064JB0

S71PL064J80

S71PL064JA0

S71PL064J08

S71PL064J80

S71PL064JA0

S71PL064JB0

S71PL064J80

S71PL064JA0

0B

SRAM1 / 70

SRAM3 / 70

stet

0U

0K

65

55

65

55

65

55

65

55

stet

pSRAM1 / 70

pSRAM7 / 70

pSRAM6 / 70

pSRAM1 / 55

SRAM1 / 70

SRAM3 / 70

stet

BAW

BFW

BAI

0, 2, 3, 4 (Note 1)

0P

0U

05 (Note 3)

0B

0U

0K

stet

pSRAM1 / 70

pSRAM7 / 70

pSRAM6 / 70

pSRAM1 / 55

SRAM1 / 70

SRAM3 / 70

stet

0, 2, 3, 4 (Note 1)

0P

0U

05 (Note 3)

(Note 2)

0B

0U

0K

pSRAM1 / 70

pSRAM7 / 70

pSRAM6 / 70

pSRAM1 / 55

SRAM1 / 70

SRAM3 / 70

stet

0P

0U

05 (Note 3)

0B

0U

0K

pSRAM1 / 70

pSRAM7 / 70

pSRAM6 / 70

pSRAM1 / 55

BFI

0P

0U

05 (Note 3)

Notes:

Valid Combinations

1. Type 0 is standard. Specify other options as required.

2. BGA package marking omits leading “S” and packing type

designator from ordering part number.

Valid Combinations list configurations planned to be supported in vol-

ume for this device. Consult your local sales office to confirm avail-

ability of specific valid combinations and to check on newly released

combinations.

3. Contact factory for availability.

June 16, 2004 S71PL254/127/064/032J_00A3

15

P r e l i m i n a r y

S71PL127J Valid Combinations

(p)SRAM

Type/Access

Time (ns)

Base Ordering

Part Number

Package &

Speed Options

Package

Marking

Package Modifier/Model Number

Temperature

(ns)

S71PL127JA0

S71PL127JB0

S71PL127JC0

S71PL127JA0

S71PL127JB0

S71PL127JC0

S71PL127JA0

S71PL127JB0

S71PL127JC0

S71PL127JA0

S71PL127JB0

S71PL127JC0

9Z

97

9Z

9U

9Z

9U

9Z

97

9Z

9U

9Z

9U

9Z

97

9Z

9U

9Z

9U

9Z

97

9Z

9U

9Z

9U

pSRAM7 / 70

pSRAM1 / 70

pSRAM7 / 70

pSRAM6 /70

pSRAM7 / 70

pSRAM6 / 70

pSRAM7 / 70

pSRAM1 / 70

pSRAM7 / 70

pSRAM6 / 70

pSRAM7 / 70

pSRAM6 / 70

pSRAM7 / 70

pSRAM1 / 70

pSRAM7 / 70

pSRAM6 / 70

pSRAM7 / 70

pSRAM6 / 70

pSRAM7 / 70

pSRAM1 / 70

pSRAM7 / 70

pSRAM6 / 70

pSRAM7 / 70

pSRAM6 / 70

BAW

BFW

BAI

65

(Note 2)

BFI

Notes:

1. Type 0 is standard. Specify other options as required.

2. BGA package marking omits leading “S” and packing type

designator from ordering part number.

Valid Combinations

Valid Combinations list configurations planned to be supported in vol-

ume for this device. Consult your local sales office to confirm avail-

ability of specific valid combinations and to check on newly released

combinations.

16

S71PL254/127/064/032J_00A3 June 16, 2004

P r e l i m i n a r y

S71PL254J Valid Combinations

(p)SRAM

Type/Access

Time (ns)

Base Ordering

Part Number

Package &

Speed Options

(ns)

Package

Marking

Model Number

Temperature

Packing Type

S71PL254JB0

S71PL254JC0

S71PL254JB0

S71PL254JC0

S71PL254JB0

S71PL254JC0

S71PL254JB0

S71PL254JC0

T7

TU

TZ

T7

TU

TZ

T7

TU

TZ

T7

TU

TZ

pSRAM1 / 70

pSRAM6 / 70

pSRAM6 /70

pSRAM7 / 70

pSRAM1 / 70

pSRAM6 / 70

pSRAM7 / 70

pSRAM1 / 70

pSRAM6 / 70

pSRAM7 / 70

pSRAM1 / 70

pSRAM6 / 70

pSRAM7 / 70

BAW

BFW

BAI

0, 2, 3, 4 (Note 1)

65

(Note 2)

BFI

Notes:

Valid Combinations

1. Type 0 is standard. Specify other options as required.

2. BGA package marking omits leading “S” and packing type

designator from ordering part number.

Valid Combinations list configurations planned to be supported in vol-

ume for this device. Consult your local sales office to confirm avail-

ability of specific valid combinations and to check on newly released

combinations.

June 16, 2004 S71PL254/127/064/032J_00A3

17

P r e l i m i n a r y

Physical Dimensions

TLC056—56-ball Fine-Pitch Ball Grid Array (FBGA)

9 x 7 mm Package

A

D1

D

eD

0.15

(2X)

C

8

7

6

5

4

3

2

1

SE

7

E

B

E1

eE

H

G

F

E

D

C

B

A

INDEX MARK

10

PIN A1

CORNER

PIN A1

CORNER

7

SD

0.15

(2X)

C

TOP VIEW

BOTTOM VIEW

0.20

0.08

C

A2

A

C

A1

SIDE VIEW

6

56X

b

0.15

M

C

A

B

0.08

M

NOTES:

PACKAGE

JEDEC

TLC 056

N/A

1. DIMENSIONING AND TOLERANCING METHODS PER

ASME Y14.5M-1994.

2. ALL DIMENSIONS ARE IN MILLIMETERS.

D x E

9.00 mm x 7.00 mm

PACKAGE

3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.

SYMBOL

MIN

---

NOM

---

MAX

NOTE

4.

e REPRESENTS THE SOLDER BALL GRID PITCH.

A

A1

1.20

---

PROFILE

5. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D"

DIRECTION.

0.20

0.81

---

BALL HEIGHT

SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE

"E" DIRECTION.

A2

---

0.97

BODY THICKNESS

BODY SIZE

D

9.00 BSC.

7.00 BSC.

5.60 BSC.

8

n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS

FOR MATRIX SIZE MD X ME.

E

BODY SIZE

D1

E1

MATRIX FOOTPRINT

6

7

DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL

DIAMETER IN A PLANE PARALLEL TO DATUM C.

SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A

AND B AND DEFINE THE POSITION OF THE CENTER SOLDER

BALL IN THE OUTER ROW.

MD

ME

n

MATRIX SIZE D DIRECTION

MATRIX SIZE E DIRECTION

BALL COUNT

8

56

WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE

OUTER ROW SD OR SE = 0.000.

φb

0.35

0.40

0.45

BALL DIAMETER

WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE

OUTER ROW, SD OR SE = e/2

eE

0.80 BSC.

0.80 BSC

0.40 BSC.

BALL PITCH

eD

SD / SE

BALL PITCH

8. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED

BALLS.

SOLDER BALL PLACEMENT

A1,A8,D4,D5,E4,E5,H1,H8

DEPOPULATED SOLDER BALLS

9. N/A

10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK

MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.

3348 \ 16-038.22a

18

S71PL254/127/064/032J_00A3 June 16, 2004

P r e l i m i n a r y

TLA064—64-ball Fine-Pitch Ball Grid Array (FBGA)

8 x 11.6 mm Package

A

D1

D

eD

0.15

(2X)

C

10

9

8

7

6

5

4

3

2

1

SE

7

E

B

E1

eE

L

J

H

G

F

E

D

C

B

A

M

K

INDEX MARK

10

PIN A1

CORNER

PIN A1

CORNER

7

SD

0.15

(2X)

C

TOP VIEW

SIDE VIEW

BOTTOM VIEW

0.20

0.08

C

A2

A

C

A1

6

64X

b

0.15

0.08

M

C

A B

M

NOTES:

PACKAGE

JEDEC

TLA 064

N/A

1. DIMENSIONING AND TOLERANCING METHODS PER

ASME Y14.5M-1994.

2. ALL DIMENSIONS ARE IN MILLIMETERS.

D x E

11.60 mm x 8.00 mm

PACKAGE

3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.

SYMBOL

MIN

---

NOM

---

MAX

1.20

NOTE

4.

e REPRESENTS THE SOLDER BALL GRID PITCH.

A

A1

PROFILE

5. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D"

DIRECTION.

0.17

0.81

---

BALL HEIGHT

SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE

"E" DIRECTION.

A2

---

0.97

BODY THICKNESS

BODY SIZE

D

11.60 BSC.

8.00 BSC.

8.80 BSC.

7.20 BSC.

12

n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS

FOR MATRIX SIZE MD X ME.

E

BODY SIZE

D1

E1

MATRIX FOOTPRINT

6

7

DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL

DIAMETER IN A PLANE PARALLEL TO DATUM C.

SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A

AND B AND DEFINE THE POSITION OF THE CENTER SOLDER

BALL IN THE OUTER ROW.

MD

ME

n

MATRIX SIZE D DIRECTION

MATRIX SIZE E DIRECTION

BALL COUNT

10

64

WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE

OUTER ROW SD OR SE = 0.000.

φb

0.35

0.40

0.45

BALL DIAMETER

WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE

OUTER ROW, SD OR SE = e/2

eE

0.80 BSC.

0.80 BSC

0.40 BSC.

BALL PITCH

eD

SD / SE

BALL PITCH

8. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED

BALLS.

SOLDER BALL PLACEMENT

DEPOPULATED SOLDER BALLS

A2,A3,A4,A5,A6,A7,A8,A9

B1,B2,B3,B4,B7,B8,B9,B10

C1,C2,C9,C10,D1,D10,E1,E10,

F1,F5,F6,F10,G1,G5,G6,G10

H1,H10,J1,J10,K1,K2,K9,K10

L1,L2,L3,L4,L7,L8,L9,L10

9. N/A

10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK

MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.

M2,M3,M4,M5,M6,M7,M8,M9

3352 \ 16-038.22a

June 16, 2004 S71PL254/127/064/032J_00A3

19

P r e l i m i n a r y

FTA084—84-ball Fine-Pitch Ball Grid Array (FBGA)

8 x 11.6 mm

A

D1

D

eD

0.15

(2X)

C

10

9

8

SE

7

6

E

B

E1

5

4

3

2

1

eE

J

H

G

F

E

D

C

B

A

M

L K

INDEX MARK

10

PIN A1

CORNER

PIN A1

CORNER

7

SD

0.15

(2X)

C

TOP VIEW

BOTTOM VIEW

0.20

0.08

C

A2

A

C

A1

SIDE VIEW

6

84X

b

0.15

M

C

A

B

0.08

M

NOTES:

PACKAGE

JEDEC

FTA 084

N/A

1. DIMENSIONING AND TOLERANCING METHODS PER

ASME Y14.5M-1994.

2. ALL DIMENSIONS ARE IN MILLIMETERS.

D x E

11.60 mm x 8.00 mm

PACKAGE

NOTE

3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.

SYMBOL

MIN

---

NOM

---

MAX

4.

e REPRESENTS THE SOLDER BALL GRID PITCH.

A

A1

1.40

---

PROFILE

5. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D"

DIRECTION.

0.17

1.02

---

BALL HEIGHT

SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE

"E" DIRECTION.

A2

---

1.17

BODY THICKNESS

BODY SIZE

D

11.60 BSC.

8.00 BSC.

8.80 BSC.

7.20 BSC.

12

n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS

FOR MATRIX SIZE MD X ME.

E

BODY SIZE

D1

E1

MATRIX FOOTPRINT

6

7

DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL

DIAMETER IN A PLANE PARALLEL TO DATUM C.

SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A

AND B AND DEFINE THE POSITION OF THE CENTER SOLDER

BALL IN THE OUTER ROW.

MD

ME

n

MATRIX SIZE D DIRECTION

MATRIX SIZE E DIRECTION

BALL COUNT

10

84

WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE

OUTER ROW SD OR SE = 0.000.

φb

0.35

0.40

0.45

BALL DIAMETER

WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE

OUTER ROW, SD OR SE = e/2

eE

0.80 BSC.

0.80 BSC

0.40 BSC.

BALL PITCH

eD

SD / SE

BALL PITCH

8. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED

BALLS.

SOLDER BALL PLACEMENT

A2,A3,A4,A5,A6,A7,A8,A9

B1,B10,C1,C10,D1,D10,E1,E10

F1,F10,G1,G10,H1,H10

DEPOPULATED SOLDER BALLS

9. N/A

10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK

MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.

J1,J10,K1,K10,L1,L10

M2,M3,M4,M5,M6,M7,M8,M9

3388 \ 16-038.21a

20

S71PL254/127/064/032J_00A3 June 16, 2004

S29PL127J/S29PL064J/S29PL032J for MCP

128/128/64/32 Megabit (8/4/2 M x 16-Bit)

CMOS 3.0 Volt-only, Simultaneous Read/Write

Flash Memory with Enhanced VersatileIO^TMControl

PRELIMINARY

Distinctive Characteristics

SecSi^TM(Secured Silicon) Sector region

— Up to 128 words accessible through a command

sequence

ARCHITECTURAL ADVANTAGES

128/64/32 Mbit Page Mode devices

— Page size of 8 words: Fast page read access from

random locations within the page

— Up to 64 factory-locked words

— Up to 64 customer-lockable words

Single power supply operation

— Full Voltage range: 2.7 to 3.6 volt read, erase, and

program operations for battery-powered applications

Both top and bottom boot blocks in one device

Manufactured on 110 nm process technology

Data Retention: 20 years typical

Simultaneous Read/Write Operation

— Data can be continuously read from one bank while

executing erase/program functions in another bank

— Zero latency switching from write to read operations

Cycling Endurance: 1 million cycles per sector

typical

FlexBank Architecture (PL127J/PL064J/PL032J)

— 4 separate banks, with up to two simultaneous

operations per device

PERFORMANCE CHARACTERISTICS

High Performance

— Page access times as fast as 20 ns

— Random access times as fast as 55 ns

— Bank A:

PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31)

PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15)

PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7)

Power consumption (typical values at 10 MHz)

— 45 mA active read current

— Bank B:

— 17 mA program/erase current

PL127J - 48 Mbit (32 Kw x 96)

PL064J - 24 Mbit (32 Kw x 48)

PL032J - 12 Mbit (32 Kw x 24)

— 0.2 µA typical standby mode current

SOFTWARE FEATURES

— Bank C:

Software command-set compatible with JEDEC

42.4 standard

— Backward compatible with Am29F, Am29LV,

Am29DL, and AM29PDL families and MBM29QM/RM,

MBM29LV, MBM29DL, MBM29PDL families

PL127J - 48 Mbit (32 Kw x 96)

PL064J - 24 Mbit (32 Kw x 48)

PL032J - 12 Mbit (32 Kw x 24)

— Bank D:

PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31)

PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15)

PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7)

CFI (Common Flash Interface) compliant

— Provides device-specific information to the system,

allowing host software to easily reconfigure for

different Flash devices

Enhanced VersatileI/O^TM(V_IO) Control

— Output voltage generated and input voltages

tolerated on all control inputs and I/Os is determined

by the voltage on the V_IOpin

Erase Suspend / Erase Resume

— Suspends an erase operation to allow read or

program operations in other sectors of same bank

— V_IOoptions at 1.8 V and 3 V I/O for PL127J devices

— 3V V_IOfor PL064J and PL032J devices

Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

Publication Number S29PL127_064_032J_00_ Revision A Amendment 1 Issue Date May 21, 2004

P r e l i m i n a r y

HARDWARE FEATURES

Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting program or erase cycle completion

Hardware reset pin (RESET#)

— Hardware method to reset the device to reading array data

WP#/ ACC (Write Protect/Acceleration) input

— At V_IL, hardware level protection for the first and last two 4K word sectors.

— At V_IH, allows removal of sector protection

— At V_HH, provides accelerated programming in a factory setting

Persistent Sector Protection

— A command sector protection method to lock combinations of individual sectors and sector groups to prevent program

or erase operations within that sector

— Sectors can be locked and unlocked in-system at V_CClevel

Password Sector Protection

— A sophisticated sector protection method to lock combinations of individual sectors and sector groups to prevent

program or erase operations within that sector using a user-defined 64-bit password

22

S29PL127J/S29PL064J/S29PL032J for MCP

S29PL127_064_032J_00_A1 May 21, 2004

P r e l i m i n a r y

General Description

The PL127J/PL064J/PL032J is a 128/128/64/32 Mbit, 3.0 volt-only Page Mode

and Simultaneous Read/Write Flash memory device organized as 8/8/4/2

Mwords.

The word-wide data (x16) appears on DQ15-DQ0. This device can be pro-

grammed in-system or in standard EPROM programmers. A 12.0 V V_PPis not

required for write or erase operations.

The device offers fast page access times of 20 to 30 ns, with corresponding ran-

dom access times of 55 to 70 ns, respectively, allowing high speed

microprocessors to operate without wait states. To eliminate bus contention the

device has separate chip enable (CE#), write enable (WE#) and output enable

(OE#) controls.

Simultaneous Read/Write Operation with Zero Latency

The Simultaneous Read/Write architecture provides simultaneous operation

by dividing the memory space into 4 banks, which can be considered to be four

separate memory arrays as far as certain operations are concerned. The device

can improve overall system performance by allowing a host system to program

or erase in one bank, then immediately and simultaneously read from another

bank with zero latency (with two simultaneous operations operating at any one

time). This releases the system from waiting for the completion of a program or

erase operation, greatly improving system performance.

The device can be organized in both top and bottom sector configurations. The

banks are organized as follows:

Bank

A

PL127J Sectors

PL064J Sectors

PL032J Sectors

16 Mbit (4 Kw x 8 and 32 Kw x 31)

48 Mbit (32 Kw x 96)

8 Mbit (4 Kw x 8 and 32 Kw x 15)

24 Mbit (32 Kw x 48)

4 Mbit (4 Kw x 8 and 32 Kw x 7)

12 Mbit (32 Kw x 24)

B

C

48 Mbit (32 Kw x 96)

24 Mbit (32 Kw x 48)

12 Mbit (32 Kw x 24)

D

16 Mbit (4 Kw x 8 and 32 Kw x 31)

8 Mbit (4 Kw x 8 and 32 Kw x 15)

4 Mbit (4 Kw x 8 and 32 Kw x 7)

Page Mode Features

The page size is 8 words. After initial page access is accomplished, the page mode

operation provides fast read access speed of random locations within that page.

Standard Flash Memory Features

The device requires a single 3.0 volt power supply (2.7 V to 3.6 V) for both

read and write functions. Internally generated and regulated voltages are pro-

vided for the program and erase operations.

The device is entirely command set compatible with the JEDEC 42.4 single-

power-supply Flash standard. Commands are written to the command regis-

ter using standard microprocessor write timing. Register contents serve as inputs

to an internal state-machine that controls the erase and programming circuitry.

Write cycles also internally latch addresses and data needed for the programming

and erase operations. Reading data out of the device is similar to reading from

other Flash or EPROM devices.

May 21, 2004 S29PL127_064_032J_00_A1

S29PL127J/S29PL064J/S29PL032J for MCP

23

P r e l i m i n a r y

Device programming occurs by executing the program command sequence. The

Unlock Bypass mode facilitates faster programming times by requiring only two

write cycles to program data instead of four. Device erasure occurs by executing

the erase command sequence.

The host system can detect whether a program or erase operation is complete by

reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program

or erase cycle has been completed, the device is ready to read array data or ac-

cept another command.

The sector erase architecture allows memory sectors to be erased and repro-

grammed without affecting the data contents of other sectors. The device is fully

erased when shipped from the factory.

Hardware data protection measures include a low V_CCdetector that automat-

ically inhibits write operations during power transitions. The hardware sector

protection feature disables both program and erase operations in any combina-

tion of sectors of memory. This can be achieved in-system or via programming

equipment.

The Erase Suspend/Erase Resume feature enables the user to put erase on

hold for any period of time to read data from, or program data to, any sector that

is not selected for erasure. True background erase can thus be achieved. If a read

is needed from the SecSi Sector area (One Time Program area) after an erase

suspend, then the user must use the proper command sequence to enter and exit

this region.

The device offers two power-saving features. When addresses have been stable

for a specified amount of time, the device enters the automatic sleep mode.

The system can also place the device into the standby mode. Power consumption

is greatly reduced in both these modes.

The device electrically erases all bits within a sector simultaneously via Fowler-

Nordheim tunneling. The data is programmed using hot electron injection.

24

S29PL127J/S29PL064J/S29PL032J for MCP

S29PL127_064_032J_00_A1 May 21, 2004

P r e l i m i n a r y

Product Selector Guide

Part Number

S29PL032J/S29PL064J/S29PL127J/064J/032J

V

,V = 2.7–3.6 V

CC IO

55 (Note)

60

65

70

Speed Option

V

= 2.7–3.6 V,

= 1.65–1.95 V (PL127J only)

CC

IO

65

70

Max Access Time, ns (t_ACC

Max CE# Access, ns (t_CE

Max Page Access, ns (t_PACC

Max OE# Access, ns (t_OE

)

55 (Note)

20 (Note)

60

25

65

25

70

30

)

30

)

Note: Contact factory for availability

May 21, 2004 S29PL127_064_032J_00_A1

S29PL127J/S29PL064J/S29PL032J for MCP

25

P r e l i m i n a r y

Block Diagram

DQ15–DQ0

RY/BY# (See Note)

V

CC

V

SS

Sector

Switches

V

IO

Input/Output

Buffers

RESET#

WE#

Erase Voltage

Generator

State

Control

Command

Register

PGM Voltage

Generator

Chip Enable

Output Enable

Logic

CE#

OE#

Data Latch

Y-Gating

Y-Decoder

X-Decoder

V

CC

Detector

Timer

Amax–A3

Cell Matrix

A2–A0

Notes:

1. RY/BY# is an open drain output.

2. Amax = A22 (PL127J), A21 (PL064J), A20 (PL032J)

26

S29PL127J/S29PL064J/S29PL032J for MCP

S29PL127_064_032J_00_A1 May 21, 2004

P r e l i m i n a r y

Simultaneous Read/Write Block Diagram

V

CC

SS

OE#

Mux

Bank A

Bank A Address

Amax–A0

X-Decoder

Bank B Address

RY/BY#

Bank B

X-Decoder

Amax–A0

RESET#

STATE

CONTROL

&

COMMAND

REGISTER

Status

WE#

DQ15–DQ0

CE#

WP#/ACC

Control

Mux

X-Decoder

Bank C

DQ0–DQ15

Bank C Address

Bank D Address

X-Decoder

Bank D

Amax–A0

Mux

Note: Amax = A22 (PL127J), A21 (PL064J), A20 (PL032J)

Note: Pinout shown for PL127J.

May 21, 2004 S29PL127_064_032J_00_A1

S29PL127J/S29PL064J/S29PL032J for MCP

27

P r e l i m i n a r y

Pin Description

Amax–A0

=

Address bus

DQ15–DQ0

CE#

OE#

WE#

V_SS

16-bit data inputs/outputs/float

Chip Enable Inputs

Output Enable Input

Write Enable

Device Ground

Pin Not Connected Internally

NC

RY/BY#

Ready/Busy output and open drain.

When RY/BY#= V_IH, the device is ready to accept

read operations and commands. When RY/BY#=

V_OL, the device is either executing an embedded

algorithm or the device is executing a hardware

reset operation.

WP#/ACC

=

Write Protect/Acceleration Input.

When WP#/ACC= V_IL, the highest and lowest two

4K-word sectors are write protected regardless of

other sector protection configurations. When WP#/

ACC= V_IH, these sector are unprotected unless the

DYB or PPB is programmed. When WP#/ACC= 12V,

program and erase operations are accelerated.

V_IO

=

Input/Output Buffer Power Supply

(1.65 V to 1.95 V (for PL127J ) or 2.7 V to 3.6 V (for

all PLxxxJ devices)

V_CC

Chip Power Supply

(2.7 V to 3.6 V or 2.7 to 3.3 V)

RESET#

CE#1

=

Hardware Reset Pin

Chip Enable Inputs

Notes:

1. Amax = A22 (PL127J), A21 (PL064J), A20 (PL032J)

Logic Symbol

max+1

Amax–A0

16

DQ15–DQ0

CE#

OE#

WE#

WP#/ACC

RESET#

RY/BY#

V_IO(V_CCQ

)

28

S29PL127J/S29PL064J/S29PL032J for MCP

S29PL127_064_032J_00_A1 May 21, 2004

P r e l i m i n a r y

Device Bus Operations

This section describes the requirements and use of the device bus operations,

which are initiated through the internal command register. The command register

itself does not occupy any addressable memory location. The register is a latch

used to store the commands, along with the address and data information

needed to execute the command. The contents of the register serve as inputs to

the internal state machine. The state machine outputs dictate the function of the

device. Table 1 lists the device bus operations, the inputs and control levels they

require, and the resulting output. The following subsections describe each of

these operations in further detail.

Table 1. PL127J Device Bus Operations

Addresses

(Amax–A0)

DQ15–

DQ0

Operation

CE#

L

OE#

L

WE#

RESET#

WP#/ACC

X

Read

Write

H

L

H

A_IN

D_OUT

D_IN

L

H

X (Note 2)

A_IN

V_IO

0.3 V

V_IO

0.3 V

Standby

X

X (Note 2)

X

High-Z

Output Disable

Reset

L

X

H

X

H

X

H

L

X

High-Z

D_IN

Temporary Sector Unprotect (High Voltage)

V_ID

A_IN

Legend: L= Logic Low = V_IL, H = Logic High = V_IH, V_ID= 11.5-12.5 V, V_HH= 8.5-9.5 V, X = Don’t Care, SA =

Sector Address, A_IN= Address In, D_IN= Data In, D_OUT= Data Out

Notes:

1. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the

High Voltage Sector Protection section.

2. WP#/ACC must be high when writing to upper two and lower two sectors.

Requirements for Reading Array Data

To read array data from the outputs, the system must drive the OE# and appro-

priate CE# pins. OE# is the output control and gates array data to the output

pins. WE# should remain at V_IH.

The internal state machine is set for reading array data upon device power-up,

or after a hardware reset. This ensures that no spurious alteration of the memory

content occurs during the power transition. No command is necessary in this

mode to obtain array data. Standard microprocessor read cycles that assert valid

addresses on the device address inputs produce valid data on the device data

outputs. Each bank remains enabled for read access until the command register

contents are altered.

Refer to Table 23 for timing specifications and to Figure 11 for the timing diagram.

I_CC1in the DC Characteristics table represents the active current specification for

reading array data.

Random Read (Non-Page Read)

Address access time (t_ACC) is equal to the delay from stable addresses to valid

output data. The chip enable access time (t_CE) is the delay from the stable ad-

dresses and stable CE# to valid data at the output inputs. The output enable

May 21, 2004 S29PL127_064_032J_00_A1

S29PL127J/S29PL064J/S29PL032J for MCP

29

P r e l i m i n a r y

access time is the delay from the falling edge of the OE# to valid data at the out-

put inputs (assuming the addresses have been stable for at least t_ACC–t_OEtime).

Page Mode Read

The device is capable of fast page mode read and is compatible with the page

mode Mask ROM read operation. This mode provides faster read access speed for

random locations within a page. Address bits Amax–A3 select an 8 word page,

and address bits A2–A0 select a specific word within that page. This is an asyn-

chronous operation with the microprocessor supplying the specific word location.

The random or initial page access is t_ACCor t_CEand subsequent page read ac-

cesses (as long as the locations specified by the microprocessor falls within that

page) is equivalent to t_PACC. Fast page mode accesses are obtained by keeping

Amax–A3 constant and changing A2–A0 to select the specific word within that

page.

Table 2. Page Select

Word

A2

0

A1

0

1

0

1

A0

0

Word 0

Word 1

Word 2

Word 3

Word 4

Word 5

Word 6

Word 7

0

1

0

1

0

1

0

1

Simultaneous Read/Write Operation

In addition to the conventional features (read, program, erase-suspend read, and

erase-suspend program), the device is capable of reading data from one bank of

memory while a program or erase operation is in progress in another bank of

memory (simultaneous operation). The bank can be selected by bank addresses

(PL127J: A22–A20, L064J: A21–A19, PL032J: A20–A18) with zero latency.

The simultaneous operation can execute multi-function mode in the same bank.

Table 3. Bank Select

PL127J: A22–A20

PL064J: A21–A19

PL032J: A20–A18

Bank

Bank A

Bank B

Bank C

Bank D

000

001, 010, 011

100, 101, 110

111

30

S29PL127J/S29PL064J/S29PL032J for MCP

S29PL127_064_032J_00_A1 May 21, 2004

P r e l i m i n a r y

Writing Commands/Command Sequences

To write a command or command sequence (which includes programming data

to the device and erasing sectors of memory), the system must drive WE# and

CE# to V_IL, and OE# to V_IH.

The device features an Unlock Bypass mode to facilitate faster programming.

Once a bank enters the Unlock Bypass mode, only two write cycles are required

to program a word, instead of four. The “Word Program Command Sequence”

section has details on programming data to the device using both standard and

Unlock Bypass command sequences.

An erase operation can erase one sector, multiple sectors, or the entire device.

Table 4 indicates the set of address space that each sector occupies. A “bank ad-

dress” is the set of address bits required to uniquely select a bank. Similarly, a

“sector address” refers to the address bits required to uniquely select a sector.

The “Command Definitions” section has details on erasing a sector or the entire

chip, or suspending/resuming the erase operation.

I_CC2in the DC Characteristics table represents the active current specification for

the write mode. See the timing specification tables and timing diagrams in the

Reset for write operations.

Accelerated Program Operation

The device offers accelerated program operations through the ACC function. This

function is primarily intended to allow faster manufacturing throughput at the

factory.

If the system asserts V_HHon this pin, the device automatically enters the afore-

mentioned Unlock Bypass mode, temporarily unprotects any protected sectors,

and uses the higher voltage on the pin to reduce the time required for program

operations. The system would use a two-cycle program command sequence as

required by the Unlock Bypass mode. Removing V_HHfrom the WP#/ACC pin re-

turns the device to normal operation. Note that V_HHmust not be asserted on

WP#/ACC for operations other than accelerated programming, or device damage

may result. In addition, the WP#/ACC pin should be raised to V_CCwhen not in

use. That is, the WP#/ACC pin should not be left floating or unconnected; incon-

sistent behavior of the device may result.

Autoselect Functions

If the system writes the autoselect command sequence, the device enters the au-

toselect mode. The system can then read autoselect codes from the internal

register (which is separate from the memory array) on DQ15–DQ0. Standard

read cycle timings apply in this mode. Refer to the SecSiTM Sector Addresses and

Autoselect Command Sequence for more information.

Standby Mode

When the system is not reading or writing to the device, it can place the device

in the standby mode. In this mode, current consumption is greatly reduced, and

the outputs are placed in the high impedance state, independent of the OE#

input.

The device enters the CMOS standby mode when the CE# and RESET# pins are

both held at V_IO± 0.3 V. (Note that this is a more restricted voltage range than

V_IH.) If CE# and RESET# are held at V_IH, but not within V_IO± 0.3 V, the device

will be in the standby mode, but the standby current will be greater. The device

May 21, 2004 S29PL127_064_032J_00_A1

S29PL127J/S29PL064J/S29PL032J for MCP

31

P r e l i m i n a r y

requires standard access time (t_CE) for read access when the device is in either

of these standby modes, before it is ready to read data.

If the device is deselected during erasure or programming, the device draws ac-

tive current until the operation is completed.

I_CC3in “DC Characteristics” represents the CMOS standby current specification.

Automatic Sleep Mode

The automatic sleep mode minimizes Flash device energy consumption. The de-

vice automatically enables this mode when addresses remain stable for t_ACC

+

30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# con-

trol signals. Standard address access timings provide new data when addresses

are changed. While in sleep mode, output data is latched and always available to

the system. Note that during automatic sleep mode, OE# must be at V_IHbefore

the device reduces current to the stated sleep mode specification. I_CC5in “DC

Characteristics” represents the automatic sleep mode current specification.

RESET#: Hardware Reset Pin

The RESET# pin provides a hardware method of resetting the device to reading

array data. When the RESET# pin is driven low for at least a period of t_RP, the

device immediately terminates any operation in progress, tristates all output

pins, and ignores all read/write commands for the duration of the RESET# pulse.

The device also resets the internal state machine to reading array data. The op-

eration that was interrupted should be reinitiated once the device is ready to

accept another command sequence, to ensure data integrity.

Current is reduced for the duration of the RESET# pulse. When RESET# is held

at V_SS±0.3 V, the device draws CMOS standby current (I_CC4). If RESET# is held

at V_ILbut not within V_SS±0.3 V, the standby current will be greater.

The RESET# pin may be tied to the system reset circuitry. A system reset would

thus also reset the Flash memory, enabling the system to read the boot-up firm-

ware from the Flash memory.

If RESET# is asserted during a program or erase operation, the RY/BY# pin re-

mains a “0” (busy) until the internal reset operation is complete, which requires

a time of t_READY(during Embedded Algorithms). The system can thus monitor RY/

BY# to determine whether the reset operation is complete. If RESET# is asserted

when a program or erase operation is not executing (RY/BY# pin is “1”), the reset

operation is completed within a time of t_READY(not during Embedded Algorithms).

The system can read data t_RHafter the RESET# pin returns to V_IH.

Refer to the AC Characteristic tables for RESET# parameters and to 13 for the

timing diagram.

Output Disable Mode

When the OE# input is at V_IH, output from the device is disabled. The output pins

(except for RY/BY#) are placed in the highest Impedance state

32

S29PL127J/S29PL064J/S29PL032J for MCP

S29PL127_064_032J_00_A1 May 21, 2004

P r e l i m i n a r y

Table 4. PL127J Sector Architecture

Bank

Sector

SA0

Sector Address (A22-A12)

00000000000

00000000001

00000000010

00000000011

00000000100

00000000101

00000000110

00000000111

00000001XXX

00000010XXX

00000011XXX

00000100XXX

00000101XXX

00000110XXX

00000111XXX

00001000XXX

00001001XXX

00001010XXX

00001011XXX

00001100XXX

00001101XXX

00001110XXX

00001111XXX

00010000XXX

00010001XXX

00010010XXX

00010011XXX

00010100XXX

00010101XXX

00010110XXX

00010111XXX

00011000XXX

00011001XXX

00011010XXX

00011011XXX

00011100XXX

00011101XXX

00011110XXX

00011111XXX

Sector Size (Kwords)

Address Range (x16)

000000h–000FFFh

001000h–001FFFh

002000h–002FFFh

003000h–003FFFh

004000h–004FFFh

005000h–005FFFh

006000h–006FFFh

007000h–007FFFh

008000h–00FFFFh

010000h–017FFFh

018000h–01FFFFh

020000h–027FFFh

028000h–02FFFFh

030000h–037FFFh

038000h–03FFFFh

040000h–047FFFh

048000h–04FFFFh

050000h–057FFFh

058000h–05FFFFh

060000h–067FFFh

068000h–06FFFFh

070000h–077FFFh

078000h–07FFFFh

080000h–087FFFh

088000h–08FFFFh

090000h–097FFFh

098000h–09FFFFh

0A0000h–0A7FFFh

0A8000h–0AFFFFh

0B0000h–0B7FFFh

0B8000h–0BFFFFh

0C0000h–0C7FFFh

0C8000h–0CFFFFh

0D0000h–0D7FFFh

0D8000h–0DFFFFh

0E0000h–0E7FFFh

0E8000h–0EFFFFh

0F0000h–0F7FFFh

0F8000h–0FFFFFh

4

SA1

4

SA2

4

SA3

4

SA4

4

SA5

4

SA6

4

SA7

4

SA8

32

SA9

SA10

SA11

SA12

SA13

SA14

SA15

SA16

SA17

SA18

SA19

SA20

SA21

SA22

SA23

SA24

SA25

SA26

SA27

SA28

SA29

SA30

SA31

SA32

SA33

SA34

SA35

SA36

SA37

SA38

May 21, 2004 S29PL127_064_032J_00_A1

S29PL127J/S29PL064J/S29PL032J for MCP

33

P r e l i m i n a r y

Table 4. PL127J Sector Architecture (Continued)

Bank

Sector

SA39

SA40

SA41

SA42

SA43

SA44

SA45

SA46

SA47

SA48

SA49

SA50

SA51

SA52

SA53

SA54

SA55

SA56

SA57

SA58

SA59

SA60

SA61

SA62

SA63

SA64

SA65

SA66

SA67

SA68

SA69

SA70

SA71

SA72

SA73

SA74

SA75

SA76

SA77

SA78

Sector Address (A22-A12)

00100000XXX

00100001XXX

00100010XXX

00100011XXX

00100100XXX

00100101XXX

00100110XXX

00100111XXX

00101000XXX

00101001XXX

00101010XXX

00101011XXX

00101100XXX

00101101XXX

00101110XXX

00101111XXX

00110000XXX

00110001XXX

00110010XXX

00110011XXX

00110100XXX

00110101XXX

00110110XXX

00110111XXX

00111000XXX

00111001XXX

00111010XXX

00111011XXX

00111100XXX

00111101XXX

00111110XXX

00111111XXX

01000000XXX

01000001XXX

01000010XXX

01000011XXX

01000100XXX

01000101XXX

01000110XXX

01000111XXX

Sector Size (Kwords)

Address Range (x16)

100000h–107FFFh

108000h–10FFFFh

110000h–117FFFh

118000h–11FFFFh

120000h–127FFFh

128000h–12FFFFh

130000h–137FFFh

138000h–13FFFFh

140000h–147FFFh

148000h–14FFFFh

150000h–157FFFh

158000h–15FFFFh

160000h–167FFFh

168000h–16FFFFh

170000h–177FFFh

178000h–17FFFFh

180000h–187FFFh

188000h–18FFFFh

190000h–197FFFh

198000h–19FFFFh

1A0000h–1A7FFFh

1A8000h–1AFFFFh

1B0000h–1B7FFFh

1B8000h–1BFFFFh

1C0000h–1C7FFFh

1C8000h–1CFFFFh

1D0000h–1D7FFFh

1D8000h–1DFFFFh

1E0000h–1E7FFFh

1E8000h–1EFFFFh

1F0000h–1F7FFFh

1F8000h–1FFFFFh

200000h–207FFFh

208000h–20FFFFh

210000h–217FFFh

218000h–21FFFFh

220000h–227FFFh

228000h–22FFFFh

230000h–237FFFh

238000h–23FFFFh

32

34

S29PL127J/S29PL064J/S29PL032J for MCP

S29PL127_064_032J_00_A1 May 21, 2004

P r e l i m i n a r y

Table 4. PL127J Sector Architecture (Continued)

Bank

Sector

SA79

Sector Address (A22-A12)

01001000XXX

01001001XXX

01001010XXX

01001011XXX

01001100XXX

01001101XXX

01001110XXX

01001111XXX

01010000XXX

01010001XXX

01010010XXX

01010011XXX

01010100XXX

01010101XXX

01010110XXX

01010111XXX

01011000XXX

01011001XXX

01011010XXX

01011011XXX

01011100XXX

01011101XXX

01011110XXX

01011111XXX

01100000XXX

01100001XXX

01100010XXX

01100011XXX

01100100XXX

01100101XXX

01100110XXX

01100111XXX

01101000XXX

01101001XXX

01101010XXX

01101011XXX

01101100XXX

01101101XXX

01101110XXX

01101111XXX

Sector Size (Kwords)

Address Range (x16)

240000h–247FFFh

248000h–24FFFFh

250000h–257FFFh

258000h–25FFFFh

260000h–267FFFh

268000h–26FFFFh

270000h–277FFFh

278000h–27FFFFh

280000h–287FFFh

288000h–28FFFFh

290000h–297FFFh

298000h–29FFFFh

2A0000h–2A7FFFh

2A8000h–2AFFFFh

2B0000h–2B7FFFh

2B8000h–2BFFFFh

2C0000h–2C7FFFh

2C8000h–2CFFFFh

2D0000h–2D7FFFh

2D8000h–2DFFFFh

2E0000h–2E7FFFh

2E8000h–2EFFFFh

2F0000h–2F7FFFh

2F8000h–2FFFFFh

300000h–307FFFh

308000h–30FFFFh

310000h–317FFFh

318000h–31FFFFh

320000h–327FFFh

328000h–32FFFFh

330000h–337FFFh

338000h–33FFFFh

340000h–347FFFh

348000h–34FFFFh

350000h–357FFFh

358000h–35FFFFh

360000h–367FFFh

368000h–36FFFFh

370000h–377FFFh

378000h–37FFFFh

32

SA80

SA81

SA82

SA83

SA84

SA85

SA86

SA87

SA88

SA89

SA90

SA91

SA92

SA93

SA94

SA95

SA96

SA97

SA98

SA99

SA100

SA101

SA102

SA103

SA104

SA105

SA106

SA107

SA108

SA109

SA110

SA111

SA112

SA113

SA114

SA115

SA116

SA117

SA118

May 21, 2004 S29PL127_064_032J_00_A1

S29PL127J/S29PL064J/S29PL032J for MCP

35

P r e l i m i n a r y

Table 4. PL127J Sector Architecture (Continued)

Bank

Sector

SA119

SA120

SA121

SA122

SA123

SA124

SA125

SA126

SA127

SA128

SA129

SA130

SA131

SA132

SA133

SA134

SA135

SA136

SA137

SA138

SA139

SA140

SA141

SA142

SA143

SA144

SA145

SA146

SA147

SA148

SA149

SA150

SA151

SA152

SA153

SA154

SA155

SA156

SA157

SA158

Sector Address (A22-A12)

01110000XXX

01110001XXX

01110010XXX

01110011XXX

01110100XXX

01110101XXX

01110110XXX

01110111XXX

01111000XXX

01111001XXX

01111010XXX

01111011XXX

01111100XXX

01111101XXX

01111110XXX

01111111XXX

10000000XXX

10000001XXX

10000010XXX

10000011XXX

10000100XXX

10000101XXX

10000110XXX

10000111XXX

10001000XXX

10001001XXX

10001010XXX

10001011XXX

10001100XXX

10001101XXX

10001110XXX

10001111XXX

10010000XXX

10010001XXX

10010010XXX

10010011XXX

10010100XXX

10010101XXX

10010110XXX

10010111XXX

Sector Size (Kwords)

Address Range (x16)

380000h–387FFFh

388000h–38FFFFh

390000h–397FFFh

398000h–39FFFFh

3A0000h–3A7FFFh

3A8000h–3AFFFFh

3B0000h–3B7FFFh

3B8000h–3BFFFFh

3C0000h–3C7FFFh

3C8000h–3CFFFFh

3D0000h–3D7FFFh

3D8000h–3DFFFFh

3E0000h–3E7FFFh

3E8000h–3EFFFFh

3F0000h–3F7FFFh

3F8000h–3FFFFFh

400000h–407FFFh

408000h–40FFFFh

410000h–417FFFh

418000h–41FFFFh

420000h–427FFFh

428000h–42FFFFh

430000h–437FFFh

438000h–43FFFFh

440000h–447FFFh

448000h–44FFFFh

450000h–457FFFh

458000h–45FFFFh

460000h–467FFFh

468000h–46FFFFh

470000h–477FFFh

478000h–47FFFFh

480000h–487FFFh

488000h–48FFFFh

490000h–497FFFh

498000h–49FFFFh

4A0000h–4A7FFFh

4A8000h–4AFFFFh

4B0000h–4B7FFFh

4B8000h–4BFFFFh

32

36

S29PL127J/S29PL064J/S29PL032J for MCP

S29PL127_064_032J_00_A1 May 21, 2004

P r e l i m i n a r y

Table 4. PL127J Sector Architecture (Continued)

Bank

Sector

SA159

SA160

SA161

SA162

SA163

SA164

SA165

SA166

SA167

SA168

SA169

SA170

SA171

SA172

SA173

SA174

SA175

SA176

SA177

SA178

SA179

SA180

SA181

SA182

SA183

SA184

SA185

SA186

SA187

SA188

SA189

SA190

SA191

SA192

SA193

SA194

SA195

SA196

SA197

SA198

Sector Address (A22-A12)

10011000XXX

10011001XXX

10011010XXX

10011011XXX

10011100XXX

10011101XXX

10011110XXX

10011111XXX

10100000XXX

10100001XXX

10100010XXX

10100011XXX

10100100XXX

10100101XXX

10100110XXX

10100111XXX

10101000XXX

10101001XXX

10101010XXX

10101011XXX

10101100XXX

10101101XXX

10101110XXX

10101111XXX

10110000XXX

10110001XXX

10110010XXX

10110011XXX

10110100XXX

10110101XXX

10110110XXX

10110111XXX

10111000XXX

10111001XXX

10111010XXX

10111011XXX

10111100XXX

10111101XXX

10111110XXX

10111111XXX

Sector Size (Kwords)

Address Range (x16)

4C0000h–4C7FFFh

4C8000h–4CFFFFh

4D0000h–4D7FFFh

4D8000h–4DFFFFh

4E0000h–4E7FFFh

4E8000h–4EFFFFh

4F0000h–4F7FFFh

4F8000h–4FFFFFh

500000h–507FFFh

508000h–50FFFFh

510000h–517FFFh

518000h–51FFFFh

520000h–527FFFh

528000h–52FFFFh

530000h–537FFFh

538000h–53FFFFh

540000h–547FFFh

548000h–54FFFFh

550000h–557FFFh

558000h–15FFFFh

560000h–567FFFh

568000h–56FFFFh

570000h–577FFFh

578000h–57FFFFh

580000h–587FFFh

588000h–58FFFFh

590000h–597FFFh

598000h–59FFFFh

5A0000h–5A7FFFh

5A8000h–5AFFFFh

5B0000h–5B7FFFh

5B8000h–5BFFFFh

5C0000h–5C7FFFh

5C8000h–5CFFFFh

5D0000h–5D7FFFh

5D8000h–5DFFFFh

5E0000h–5E7FFFh

5E8000h–5EFFFFh

5F0000h–5F7FFFh

5F8000h–5FFFFFh

32

May 21, 2004 S29PL127_064_032J_00_A1

S29PL127J/S29PL064J/S29PL032J for MCP

37

P r e l i m i n a r y

Table 4. PL127J Sector Architecture (Continued)

Bank

Sector

SA199

SA200

SA201

SA202

SA203

SA204

SA205

SA206

SA207

SA208

SA209

SA210

SA211

SA212

SA213

SA214

SA215

SA216

SA217

SA218

SA219

SA220

SA221

SA222

SA223

SA224

SA225

SA226

SA227

SA228

SA229

SA230

Sector Address (A22-A12)

11000000XXX

11000001XXX

11000010XXX

11000011XXX

11000100XXX

11000101XXX

11000110XXX

11000111XXX

11001000XXX

11001001XXX

11001010XXX

11001011XXX

11001100XXX

11001101XXX

11001110XXX

11001111XXX

11010000XXX

11010001XXX

11010010XXX

11010011XXX

11010100XXX

11010101XXX

11010110XXX

11010111XXX

11011000XXX

11011001XXX

11011010XXX

11011011XXX

11011100XXX

11011101XXX

11011110XXX

11011111XXX

Sector Size (Kwords)

Address Range (x16)

600000h–607FFFh

608000h–60FFFFh

610000h–617FFFh

618000h–61FFFFh

620000h–627FFFh

628000h–62FFFFh

630000h–637FFFh

638000h–63FFFFh

640000h–647FFFh

648000h–64FFFFh

650000h–657FFFh

658000h–65FFFFh

660000h–667FFFh

668000h–66FFFFh

670000h–677FFFh

678000h–67FFFFh

680000h–687FFFh

688000h–68FFFFh

690000h–697FFFh

698000h–69FFFFh

6A0000h–6A7FFFh

6A8000h–6AFFFFh

6B0000h–6B7FFFh

6B8000h–6BFFFFh

6C0000h–6C7FFFh

6C8000h–6CFFFFh

6D0000h–6D7FFFh

6D8000h–6DFFFFh

6E0000h–6E7FFFh

6E8000h–6EFFFFh

6F0000h–6F7FFFh

6F8000h–6FFFFFh

32

38

S29PL127J/S29PL064J/S29PL032J for MCP

S29PL127_064_032J_00_A1 May 21, 2004

P r e l i m i n a r y

Table 4. PL127J Sector Architecture (Continued)

Bank

Sector

SA231

SA232

SA233

SA234

SA235

SA236

SA237

SA238

SA239

SA240

SA241

SA242

SA243

SA244

SA245

SA246

SA247

SA248

SA249

SA250

SA251

SA252

SA253

SA254

SA255

SA256

SA257

SA258

SA259

SA260

SA261

SA262

SA263

SA264

SA265

SA266

SA267

SA268

SA269

Sector Address (A22-A12)

11100000XXX

11100001XXX

11100010XXX

11100011XXX

11100100XXX

11100101XXX

11100110XXX

11100111XXX

11101000XXX

11101001XXX

11101010XXX

11101011XXX

11101100XXX

11101101XXX

11101110XXX

11101111XXX

11110000XXX

11110001XXX

11110010XXX

11110011XXX

11110100XXX

11110101XXX

11110110XXX

11110111XXX

11111000XXX

11111001XXX

11111010XXX

11111011XXX

11111100XXX

11111101XXX

11111110XXX

11111111000

11111111001

11111111010

11111111011

11111111100

11111111101

11111111110

11111111111

Sector Size (Kwords)

Address Range (x16)

700000h–707FFFh

708000h–70FFFFh

710000h–717FFFh

718000h–71FFFFh

720000h–727FFFh

728000h–72FFFFh

730000h–737FFFh

738000h–73FFFFh

740000h–747FFFh

748000h–74FFFFh

750000h–757FFFh

758000h–75FFFFh

760000h–767FFFh

768000h–76FFFFh

770000h–777FFFh

778000h–77FFFFh

780000h–787FFFh

788000h–78FFFFh

790000h–797FFFh

798000h–79FFFFh

7A0000h–7A7FFFh

7A8000h–7AFFFFh

7B0000h–7B7FFFh

7B8000h–7BFFFFh

7C0000h–7C7FFFh

7C8000h–7CFFFFh

7D0000h–7D7FFFh

7D8000h–7DFFFFh

7E0000h–7E7FFFh

7E8000h–7EFFFFh

7F0000h–7F7FFFh

7F8000h–7F8FFFh

7F9000h–7F9FFFh

7FA000h–7FAFFFh

7FB000h–7FBFFFh

7FC000h–7FCFFFh

7FD000h–7FDFFFh

7FE000h–7FEFFFh

7FF000h–7FFFFFh

32

4

May 21, 2004 S29PL127_064_032J_00_A1

S29PL127J/S29PL064J/S29PL032J for MCP

39

P r e l i m i n a r y

Table 5. PL064J Sector Architecture

Bank

Sector

SA0

Sector Address (A22-A12)

0000000000

0000000001

0000000010

0000000011

0000000100

0000000101

0000000110

0000000111

0000001XXX

0000010XXX

0000011XXX

0000100XXX

0000101XXX

0000110XXX

0000111XXX

0001000XXX

0001001XXX

0001010XXX

0001011XXX

0001100XXX

0001101XXX

0001110XXX

0001111XXX

0010000XXX

0010001XXX

0010010XXX

0010011XXX

0010100XXX

0010101XXX

0010110XXX

0010111XXX

0011000XXX

0011001XXX

0011010XXX

0011011XXX

0011100XXX

0011101XXX

0011110XXX

0011111XXX

0100000XXX

0100001XXX

0100010XXX

0100011XXX

0100100XXX

0100101XXX

0100110XXX

0100111XXX

0101000XXX

Sector Size (Kwords)

Address Range (x16)

000000h–000FFFh

001000h–001FFFh

002000h–002FFFh

003000h–003FFFh

004000h–004FFFh

005000h–005FFFh

006000h–006FFFh

007000h–007FFFh

008000h–00FFFFh

010000h–017FFFh

018000h–01FFFFh

020000h–027FFFh

028000h–02FFFFh

030000h–037FFFh

038000h–03FFFFh

040000h–047FFFh

048000h–04FFFFh

050000h–057FFFh

058000h–05FFFFh

060000h–067FFFh

068000h–06FFFFh

070000h–077FFFh

078000h–07FFFFh

080000h–087FFFh

088000h–08FFFFh

090000h–097FFFh

098000h–09FFFFh

0A0000h–0A7FFFh

0A8000h–0AFFFFh

0B0000h–0B7FFFh

0B8000h–0BFFFFh

0C0000h–0C7FFFh

0C8000h–0CFFFFh

0D0000h–0D7FFFh

0D8000h–0DFFFFh

0E0000h–0E7FFFh

0E8000h–0EFFFFh

0F0000h–0F7FFFh

0F8000h–0FFFFFh

100000h–107FFFh

108000h–10FFFFh

110000h–117FFFh

118000h–11FFFFh

120000h–127FFFh

128000h–12FFFFh

130000h–137FFFh

138000h–13FFFFh

140000h–147FFFh

4

SA1

4

SA2

4

SA3

4

SA4

4

SA5

4

SA6

4

SA7

4

SA8

32

SA9

SA10

SA11

SA12

SA13

SA14

SA15

SA16

SA17

SA18

SA19

SA20

SA21

SA22

SA23

SA24

SA25

SA26

SA27

SA28

SA29

SA30

SA31

SA32

SA33

SA34

SA35

SA36

SA37

SA38

SA39

SA40

SA41

SA42

SA43

SA44

SA45

SA46

SA47

40

S29PL127J/S29PL064J/S29PL032J for MCP

S29PL127_064_032J_00_A1 May 21, 2004

P r e l i m i n a r y

Table 5. PL064J Sector Architecture (Continued)

Bank

Sector

SA48

SA49

SA50

SA51

SA52

SA53

SA54

SA55

SA56

SA57

SA58

SA59

SA60

SA61

SA62

SA63

SA64

SA65

SA66

SA67

SA68

SA69

SA70

SA71

SA72

SA73

SA74

SA75

SA76

SA77

SA78

SA79

SA80

SA81

SA82

SA83

SA84

SA85

SA86

SA87

SA88

SA89

SA90

SA91

SA92

SA93

SA94

SA95

Sector Address (A22-A12)

0101001XXX

0101010XXX

0101011XXX

0101100XXX

0101101XXX

0101110XXX

0101111XXX

0110000XXX

0110001XXX

0110010XXX

0110011XXX

0110100XXX

0110101XXX

0110110XXX

0110111XXX

0111000XXX

0111001XXX

0111010XXX

0111011XXX

0111100XXX

0111101XXX

0111110XXX

0111111XXX

1000000XXX

1000001XXX

1000010XXX

1000011XXX

1000100XXX

1000101XXX

1000110XXX

1000111XXX

1001000XXX

1001001XXX

1001010XXX

1001011XXX

1001100XXX

1001101XXX

1001110XXX

1001111XXX

1010000XXX

1010001XXX

1010010XXX

1010011XXX

1010100XXX

1010101XXX

1010110XXX

1010111XXX

1011000XXX

Sector Size (Kwords)

Address Range (x16)

148000h–14FFFFh

150000h–157FFFh

158000h–15FFFFh

160000h–167FFFh

168000h–16FFFFh

170000h–177FFFh

178000h–17FFFFh

180000h–187FFFh

188000h–18FFFFh

190000h–197FFFh

198000h–19FFFFh

1A0000h–1A7FFFh

1A8000h–1AFFFFh

1B0000h–1B7FFFh

1B8000h–1BFFFFh

1C0000h–1C7FFFh

1C8000h–1CFFFFh

1D0000h–1D7FFFh

1D8000h–1DFFFFh

1E0000h–1E7FFFh

1E8000h–1EFFFFh

1F0000h–1F7FFFh

1F8000h–1FFFFFh

200000h–207FFFh

208000h–20FFFFh

210000h–217FFFh

218000h–21FFFFh

220000h–227FFFh

228000h–22FFFFh

230000h–237FFFh

238000h–23FFFFh

240000h–247FFFh

248000h–24FFFFh

250000h–257FFFh

258000h–25FFFFh

260000h–267FFFh

268000h–26FFFFh

270000h–277FFFh

278000h–27FFFFh

280000h–287FFFh

288000h–28FFFFh

290000h–297FFFh

298000h–29FFFFh

2A0000h–2A7FFFh

2A8000h–2AFFFFh

2B0000h–2B7FFFh

2B8000h–2BFFFFh

2C0000h–2C7FFFh

32

May 21, 2004 S29PL127_064_032J_00_A1

S29PL127J/S29PL064J/S29PL032J for MCP

41

P r e l i m i n a r y

Table 5. PL064J Sector Architecture (Continued)

Bank

Sector

SA96

Sector Address (A22-A12)

1011001XXX

1011010XXX

1011011XXX

1011100XXX

1011101XXX

1011110XXX

1011111XXX

1100000XXX

1100001XXX

1100010XXX

1100011XXX

1100100XXX

1100101XXX

1100110XXX

1100111XXX

1101000XXX

1101001XXX

1101010XXX

1101011XXX

1101100XXX

1101101XXX

1101110XXX

1101111XXX

1110000XXX

1110001XXX

1110010XXX

1110011XXX

1110100XXX

1110101XXX

1110110XXX

1110111XXX

1111000XXX

1111001XXX

1111010XXX

1111011XXX

1111100XXX

1111101XXX

1111110XXX

1111111000

1111111001

1111111010

1111111011

1111111100

1111111101

1111111110

1111111111

Sector Size (Kwords)

Address Range (x16)

2C8000h–2CFFFFh

2D0000h–2D7FFFh

2D8000h–2DFFFFh

2E0000h–2E7FFFh

2E8000h–2EFFFFh

2F0000h–2F7FFFh

2F8000h–2FFFFFh

300000h–307FFFh

308000h–30FFFFh

310000h–317FFFh

318000h–31FFFFh

320000h–327FFFh

328000h–32FFFFh

330000h–337FFFh

338000h–33FFFFh

340000h–347FFFh

348000h–34FFFFh

350000h–357FFFh

358000h–35FFFFh

360000h–367FFFh

368000h–36FFFFh

370000h–377FFFh

378000h–37FFFFh

380000h–387FFFh

388000h–38FFFFh

390000h–397FFFh

398000h–39FFFFh

3A0000h–3A7FFFh

3A8000h–3AFFFFh

3B0000h–3B7FFFh

3B8000h–3BFFFFh

3C0000h–3C7FFFh

3C8000h–3CFFFFh

3D0000h–3D7FFFh

3D8000h–3DFFFFh

3E0000h–3E7FFFh

3E8000h–3EFFFFh

3F0000h–3F7FFFh

3F8000h–3F8FFFh

3F9000h–3F9FFFh

3FA000h–3FAFFFh

3FB000h–3FBFFFh

3FC000h–3FCFFFh

3FD000h–3FDFFFh

3FE000h–3FEFFFh

3FF000h–3FFFFFh

32

4

SA97

SA98

SA99

SA100

SA101

SA102

SA103

SA104

SA105

SA106

SA107

SA108

SA109

SA110

SA111

SA112

SA113

SA114

SA115

SA116

SA117

SA118

SA119

SA120

SA121

SA122

SA123

SA124

SA125

SA126

SA127

SA128

SA129

SA130

SA131

SA132

SA133

SA134

SA135

SA136

SA137

SA138

SA139

SA140

SA141

4

42

S29PL127J/S29PL064J/S29PL032J for MCP

S29PL127_064_032J_00_A1 May 21, 2004

P r e l i m i n a r y

Table 6. PL032J Sector Architecture

Bank

Sector

Sector Address (A22-A12)

Sector Size (Kwords)

Address Range (x16)

SA0

SA1

000000000

000000001

000000010

000000011

000000100

000000101

000000110

000000111

000001XXX

000010XXX

000011XXX

000100XXX

000101XXX

000110XXX

000111XXX

001000XXX

001001XXX

001010XXX

001011XXX

001100XXX

001101XXX

001110XXX

001111XXX

010000XXX

010001XXX

010010XXX

010011XXX

010100XXX

010101XXX

010110XXX

010111XXX

011000XXX

011001XXX

011010XXX

011011XXX

011100XXX

011101XXX

011110XXX

011111XXX

4

000000h–000FFFh

001000h–001FFFh

002000h–002FFFh

003000h–003FFFh

004000h–004FFFh

005000h–005FFFh

006000h–006FFFh

007000h–007FFFh

008000h–00FFFFh

010000h–017FFFh

018000h–01FFFFh

020000h–027FFFh

028000h–02FFFFh

030000h–037FFFh

038000h–03FFFFh

040000h–047FFFh

048000h–04FFFFh

050000h–057FFFh

058000h–05FFFFh

060000h–067FFFh

068000h–06FFFFh

070000h–077FFFh

078000h–07FFFFh

080000h–087FFFh

088000h–08FFFFh

090000h–097FFFh

098000h–09FFFFh

0A0000h–0A7FFFh

0A8000h–0AFFFFh

0B0000h–0B7FFFh

0B8000h–0BFFFFh

0C0000h–0C7FFFh

0C8000h–0CFFFFh

0D0000h–0D7FFFh

0D8000h–0DFFFFh

0E0000h–0E7FFFh

0E8000h–0EFFFFh

0F0000h–0F7FFFh

0F8000h–0FFFFFh

4

SA2

4

SA3

4

SA4

4

SA5

4

SA6

4

SA7

4

SA8

32

SA9

SA10

SA11

SA12

SA13

SA14

SA15

SA16

SA17

SA18

SA19

SA20

SA21

SA22

SA23

SA24

SA25

SA26

SA27

SA28

SA29

SA30

SA31

SA32

SA33

SA34

SA35

SA36

SA37

SA38

May 21, 2004 S29PL127_064_032J_00_A1

S29PL127J/S29PL064J/S29PL032J for MCP

43

P r e l i m i n a r y

Table 6. PL032J Sector Architecture (Continued)

Bank

Sector

Sector Address (A22-A12)

Sector Size (Kwords)

Address Range (x16)

SA39

SA40

SA41

SA42

SA43

SA44

SA45

SA46

SA47

SA48

SA49

SA50

SA51

SA52

SA53

SA54

SA55

SA56

SA57

SA58

SA59

SA60

SA61

SA62

SA63

SA64

SA65

SA66

SA67

SA68

SA69

SA70

SA71

SA72

SA73

SA74

SA75

SA76

SA77

100000XXX

100001XXX

100010XXX

100011XXX

100100XXX

100101XXX

100110XXX

100111XXX

101000XXX

101001XXX

101010XXX

101011XXX

101100XXX

101101XXX

101110XXX

101111XXX

110000XXX

110001XXX

110010XXX

110011XXX

110100XXX

110101XXX

110110XXX

110111XXX

111000XXX

111001XXX

111010XXX

111011XXX

111100XXX

111101XXX

111110XXX

111111000

111111001

111111010

111111011

111111100

111111101

111111110

111111111

32

4

100000h–107FFFh

108000h–10FFFFh

110000h–117FFFh

118000h–11FFFFh

120000h–127FFFh

128000h–12FFFFh

130000h–137FFFh

138000h–13FFFFh

140000h–147FFFh

148000h–14FFFFh

150000h–157FFFh

158000h–15FFFFh

160000h–167FFFh

168000h–16FFFFh

170000h–177FFFh

178000h–17FFFFh

180000h–187FFFh

188000h–18FFFFh

190000h–197FFFh

198000h–19FFFFh

1A0000h–1A7FFFh

1A8000h–1AFFFFh

1B0000h–1B7FFFh

1B8000h–1BFFFFh

1C0000h–1C7FFFh

1C8000h–1CFFFFh

1D0000h–1D7FFFh

1D8000h–1DFFFFh

1E0000h–1E7FFFh

1E8000h–1EFFFFh

1F0000h–1F7FFFh

1F8000h–1F8FFFh

1F9000h–1F9FFFh

1FA000h–1FAFFFh

1FB000h–1FBFFFh

1FC000h–1FCFFFh

1FD000h–1FDFFFh

1FE000h–1FEFFFh

1FF000h–1FFFFFh

4

Table 7. SecSiTM Sector Addresses

Sector Size

64 words

Address Range

Factory-Locked Area

000000h-00003Fh

000040h-00007Fh

Customer-Lockable Area

64 words

44

S29PL127J/S29PL064J/S29PL032J for MCP

S29PL127_064_032J_00_A1 May 21, 2004

P r e l i m i n a r y

Autoselect Mode

The autoselect mode provides manufacturer and device identification, and sector

protection verification, through identifier codes output on DQ7–DQ0. This mode

is primarily intended for programming equipment to automatically match a device

to be programmed with its corresponding programming algorithm. However, the

autoselect codes can also be accessed in-system through the command register.

When using programming equipment, the autoselect mode requires V_IDon ad-

dress pin A9. Address pins must be as shown in Table 8 and Table 11. In addition,

when verifying sector protection, the sector address must appear on the appro-

priate highest order address bits (see Table 3). Table 8 and Table 11 show the

remaining address bits that are don’t care. When all necessary bits have been set

as required, the programming equipment may then read the corresponding iden-

tifier code on DQ7–DQ0. However, the autoselect codes can also be accessed in-

system through the command register, for instances when the device is erased

or programmed in a system without access to high voltage on the A9 pin. The

command sequence is illustrated in Table 17. Note that if a Bank Address (BA)

(on address bits PL127J: A22–A20, PL064J: A21–A19, PL032J: A20–A18) is as-

serted during the third write cycle of the autoselect command, the host system

can read autoselect data that bank and then immediately read array data from

the other bank, without exiting the autoselect mode.

To access the autoselect codes in-system, the host system can issue the autose-

lect command via the command register, as shown in Table 17. This method does

not require V_ID. Refer to the Autoselect Command Sequence for more

information.

Table 8. Autoselect Codes (High Voltage Method)

Amax

to

A12

A5

to

A4

A1

0

DQ15

to DQ0

Description

CE#

OE#

WE#

A9 A8

A7

A6

A3 A2

A1

A0

Manufacturer ID:

Spansion

products

L

H

BA

X

V_ID

X

L

X

L

H

L

0001h

227Eh

Read

Cycle 1

2220h (PL127J)

2202h (PL064J)

220Ah (PL032J)

Read

Cycle 2

H

L

H

V_ID

L

2200h (PL127J)

2201h (PL064J)

2201h (PL032J)

Read

L

H

L

H

L

H

L

Cycle 3

Sector Protection

Verification

0001h (protected),

0000h (unprotected)

L

H

SA

BA

X

V_ID

X

L

00C0h (factory and

customer locked), 0080h

(factory locked)

SecSi Indicator

Bit (DQ7, DQ6)

X

L

H

Legend: L = Logic Low = V_IL, H = Logic High = V_IH, BA = Bank Address, SA = Sector Address, X = Don’t care.

Note: The autoselect codes may also be accessed in-system via command sequences

May 21, 2004 S29PL127_064_032J_00_A1

S29PL127J/S29PL064J/S29PL032J for MCP

45

P r e l i m i n a r y

Table 9. PL127J Boot Sector/Sector Block Addresses for Protection/Unprotection

Sector/

Sector

SA0

A22-A12

Sector Block Size

Sector

A22-A12

Sector Block Size

00000000000

00000000001

00000000010

00000000011

00000000100

00000000101

00000000110

00000000111

00000001XXX

00000010XXX

00000011XXX

000001XXXXX

000010XXXXX

000011XXXXX

000100XXXXX

000101XXXXX

000110XXXXX

000111XXXXX

001000XXXXX

001001XXXXX

001010XXXXX

001011XXXXX

001100XXXXX

001101XXXXX

001110XXXXX

001111XXXXX

010000XXXXX

010001XXXXX

010010XXXXX

010011XXXXX

010100XXXXX

010101XXXXX

010110XXXXX

010111XXXXX

011000XXXXX

011001XXXXX

011010XXXXX

011011XXXXX

011100XXXXX

011101XXXXX

011110XXXXX

4 Kwords

SA131-SA134

SA135-SA138

SA139-SA142

SA143-SA146

SA147-SA150

SA151-SA154

SA155-SA158

SA159-SA162

SA163-SA166

SA167-SA170

SA171-SA174

SA175-SA178

SA179-SA182

SA183-SA186

SA187-SA190

SA191-SA194

SA195-SA198

SA199-SA202

SA203-SA206

SA207-SA210

SA211-SA214

SA215-SA218

SA219-SA222

SA223-SA226

SA227-SA230

SA231-SA234

SA235-SA238

SA239-SA242

SA243-SA246

SA247-SA250

SA251-SA254

SA255-SA258

SA259

011111XXXXX

100000XXXXX

100001XXXXX

100010XXXXX

100011XXXXX

100100XXXXX

100101XXXXX

100110XXXXX

100111XXXXX

101000XXXXX

101001XXXXX

101010XXXXX

101011XXXXX

101100XXXXX

101101XXXXX

101110XXXXX

101111XXXXX

110000XXXXX

110001XXXXX

110010XXXXX

110011XXXXX

110100XXXXX

110101XXXXX

110110XXXXX

110111XXXXX

111000XXXXX

111001XXXXX

111010XXXXX

111011XXXXX

111100XXXXX

111101XXXXX

111110XXXXX

11111100XXX

11111101XXX

11111110XXX

11111111000

11111111001

11111111010

11111111011

128 (4x32) Kwords

32 Kwords

SA1

4 Kwords

SA2

4 Kwords

SA3

4 Kwords

SA4

4 Kwords

SA5

4 Kwords

SA6

4 Kwords

SA7

4 Kwords

SA8

32 Kwords

SA9

32 Kwords

SA10

32 Kwords

SA11-SA14

SA15-SA18

SA19-SA22

SA23-SA26

SA27-SA30

SA31-SA34

SA35-SA38

SA39-SA42

SA43-SA46

SA47-SA50

SA51-SA54

SA55-SA58

SA59-SA62

SA63-SA66

SA67-SA70

SA71-SA74

SA75-SA78

SA79-SA82

SA83-SA86

SA87-SA90

SA91-SA94

SA95-SA98

SA99-SA102

SA103-SA106

SA107-SA110

SA111-SA114

SA115-SA118

SA119-SA122

SA123-SA126

SA127-SA130

128 (4x32) Kwords

SA260

32 Kwords

SA261

32 Kwords

SA262

4 Kwords

SA263

4 Kwords

SA264

4 Kwords

SA265

4 Kwords

46

S29PL127J/S29PL064J/S29PL032J for MCP

S29PL127_064_032J_00_A1 May 21, 2004

P r e l i m i n a r y

Table 10. PL064J Boot Sector/Sector Block Addresses for Protection/Unprotection

Sector

SA0

A21-A12

Sector/Sector Block Size

4 Kwords

0000000000

0000000001

0000000010

0000000011

0000000100

0000000101

0000000110

0000000111

0000001XXX

0000010XXX

0000011XXX

00001XXXXX

00010XXXXX

00011XXXXX

00100XXXXX

00101XXXXX

00110XXXXX

00111XXXXX

01000XXXXX

01001XXXXX

01010XXXXX

01011XXXXX

01100XXXXX

01101XXXXX

01110XXXXX

01111XXXXX

10000XXXXX

10001XXXXX

10010XXXXX

10011XXXXX

10100XXXXX

10101XXXXX

10110XXXXX

10111XXXXX

11000XXXXX

11001XXXXX

11010XXXXX

11011XXXXX

11100XXXXX

11101XXXXX

11110XXXXX

1111100XXX

1111101XXX

1111110XXX

1111111000

1111111001

1111111010

1111111011

1111111100

SA1

4 Kwords

SA2

4 Kwords

SA3

4 Kwords

SA4

4 Kwords

SA5

4 Kwords

SA6

4 Kwords

SA7

4 Kwords

SA8

32 Kwords

SA9

32 Kwords

SA10

32 Kwords

SA11-SA14

SA15-SA18

SA19-SA22

SA23-SA26

SA27-SA30

SA31-SA34

SA35-SA38

SA39-SA42

SA43-SA46

SA47-SA50

SA51-SA54

SA55-SA58

SA59-SA62

SA63-SA66

SA67-SA70

SA71-SA74

SA75-SA78

SA79-SA82

SA83-SA86

SA87-SA90

SA91-SA94

SA95-SA98

SA99-SA102

SA103-SA106

SA107-SA110

SA111-SA114

SA115-SA118

SA119-SA122

SA123-SA126

SA127-SA130

SA131

128 (4x32) Kwords

32 Kwords

SA132

32 Kwords

SA133

32 Kwords

SA134

4 Kwords

SA135

4 Kwords

SA136

4 Kwords

SA137

4 Kwords

SA138

4 Kwords

May 21, 2004 S29PL127_064_032J_00_A1

S29PL127J/S29PL064J/S29PL032J for MCP

47

P r e l i m i n a r y

Table 10. PL064J Boot Sector/Sector Block Addresses for Protection/Unprotection

Sector

SA139

SA140

SA141

A21-A12

Sector/Sector Block Size

4 Kwords

1111111101

1111111110

1111111111

4 Kwords

Table 11. PL032J Boot Sector/Sector Block Addresses for Protection/Unprotection

Sector

SA0

A21-A12

Sector/Sector Block Size

4 Kwords

000000000

000000001

000000010

000000011

000000100

000000101

000000110

000000111

000001XXX

000010XXX

000011XXX

0001XXXXX

0010XXXXX

0011XXXXX

0100XXXXX

0101XXXXX

0110XXXXX

0111XXXXX

1000XXXXX

1001XXXXX

1010XXXXX

1011XXXXX

1100XXXXX

1101XXXXX

1110XXXXX

111100XXX

111101XXX

111110XXX

111111000

111111001

111111010

111111011

111111100

111111101

111111110

111111111

SA1

4 Kwords

SA2

4 Kwords

SA3

4 Kwords

SA4

4 Kwords

SA5

4 Kwords

SA6

4 Kwords

SA7

4 Kwords

SA8

32 Kwords

SA9

32 Kwords

SA10

32 Kwords

SA11-SA14

SA15-SA18

SA19-SA22

SA23-SA26

SA27-SA30

SA31-SA34

SA35-SA38

SA39-SA42

SA43-SA46

SA47-SA50

SA51-SA54

SA55-SA58

SA59-SA62

SA63-SA66

SA67

128 (4x32) Kwords

32 Kwords

SA68

32 Kwords

SA69

32 Kwords

SA70

4 Kwords

SA71

4 Kwords

SA72

4 Kwords

SA73

4 Kwords

SA74

4 Kwords

SA75

4 Kwords

SA76

4 Kwords

SA77

4 Kwords

Selecting a Sector Protection Mode

All parts default to operate in the Persistent Sector Protection mode. The cus-

tomer must then choose if the Persistent or Password Protection method is most

desirable. There are two one-time programmable non-volatile bits that define

which sector protection method will be used. If the Persistent Sector Protection

method is desired, programming the Persistent Sector Protection Mode

Locking Bit permanently sets the device to the Persistent Sector Protection

mode. If the Password Sector Protection method is desired, programming the

48

S29PL127J/S29PL064J/S29PL032J for MCP

S29PL127_064_032J_00_A1 May 21, 2004

P r e l i m i n a r y

Password Mode Locking Bit permanently sets the device to the Password Sec-

tor Protection mode. It is not possible to switch between the two protection

modes once a locking bit has been set. One of the two modes must be se-

lected when the device is first programmed. This prevents a program or

virus from later setting the Password Mode Locking Bit, which would cause an un-

expected shift from the default Persistent Sector Protection Mode into the

Password Protection Mode.

The device is shipped with all sectors unprotected. Optional Spansion program-

ming services enable programming and protecting sectors at the factory prior to

shipping the device. Contact your local sales office for details.

It is possible to determine whether a sector is protected or unprotected. See the

SecSiTM Sector Addresses for details.

Table 12. Sector Protection Schemes

DYB

0

PPB

0

PPB Lock

Sector State

0

1

0

1

Unprotected—PPB and DYB are changeable

Unprotected—PPB not changeable, DYB changeable

0

1

0

Protected—PPB and DYB are changeable

1

0

1

0

Protected—PPB not changeable, DYB is changeable

1

Persistent Sector Protection

The Persistent Sector Protection method replaces the 12 V controlled protection

method in previous Flash devices. This new method provides three different sec-

tor protection states:

Persistently Locked—The sector is protected and cannot be changed.

Dynamically Locked—The sector is protected and can be changed by a simple

command.

Unlocked—The sector is unprotected and can be changed by a simple com-

mand.

To achieve these states, three types of “bits” are used:

Persistent Protection Bit

Persistent Protection Bit Lock

Persistent Sector Protection Mode Locking Bit

Persistent Protection Bit (PPB)

A single Persistent (non-volatile) Protection Bit is assigned to a maximum four

sectors (see the sector address tables for specific sector protection groupings).

All 4 Kword boot-block sectors have individual sector Persistent Protection Bits

(PPBs) for greater flexibility. Each PPB is individually modifiable through the PPB

Write Command.

The device erases all PPBs in parallel. If any PPB requires erasure, the device

must be instructed to preprogram all of the sector PPBs prior to PPB erasure. Oth-

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erwise, a previously erased sector PPBs can potentially be over-erased. The Flash

device does not have a built-in means of preventing sector PPBs over-erasure.

Persistent Protection Bit Lock (PPB Lock)

The Persistent Protection Bit Lock (PPB Lock) is a global volatile bit. When set to

“1”, the PPBs cannot be changed. When cleared (“0”), the PPBs are changeable.

There is only one PPB Lock bit per device. The PPB Lock is cleared after power-

up or hardware reset. There is no command sequence to unlock the PPB Lock.

Dynamic Protection Bit (DYB)

A volatile protection bit is assigned for each sector. After power-up or hardware

reset, the contents of all DYBs is “0”. Each DYB is individually modifiable through

the DYB Write Command.

When the parts are first shipped, the PPBs are cleared, the DYBs are cleared, and

PPB Lock is defaulted to power up in the cleared state – meaning the PPBs are

changeable.

When the device is first powered on the DYBs power up cleared (sectors not pro-

tected). The Protection State for each sector is determined by the logical OR of

the PPB and the DYB related to that sector. For the sectors that have the PPBs

cleared, the DYBs control whether or not the sector is protected or unprotected.

By issuing the DYB Write command sequences, the DYBs will be set or cleared,

thus placing each sector in the protected or unprotected state. These are the so-

called Dynamic Locked or Unlocked states. They are called dynamic states be-

cause it is very easy to switch back and forth between the protected and

unprotected conditions. This allows software to easily protect sectors against in-

advertent changes yet does not prevent the easy removal of protection when

changes are needed. The DYBs maybe set or cleared as often as needed.

The PPBs allow for a more static, and difficult to change, level of protection. The

PPBs retain their state across power cycles because they are non-volatile. Indi-

vidual PPBs are set with a command but must all be cleared as a group through

a complex sequence of program and erasing commands. The PPBs are also lim-

ited to 100 erase cycles.

The PPB Lock bit adds an additional level of protection. Once all PPBs are pro-

grammed to the desired settings, the PPB Lock may be set to “1”. Setting the PPB

Lock disables all program and erase commands to the non-volatile PPBs. In ef-

fect, the PPB Lock Bit locks the PPBs into their current state. The only way to clear

the PPB Lock is to go through a power cycle. System boot code can determine if

any changes to the PPB are needed; for example, to allow new system code to

be downloaded. If no changes are needed then the boot code can set the PPB

Lock to disable any further changes to the PPBs during system operation.

The WP#/ACC write protect pin adds a final level of hardware protection to sec-

tors SA1-133, SA1-134, SA2-0 and SA2-1. When this pin is low it is not possible

to change the contents of these sectors. These sectors generally hold system

boot code. The WP#/ACC pin can prevent any changes to the boot code that could

override the choices made while setting up sector protection during system

initialization.

For customers who are concerned about malicious viruses there is another level

of security - the persistently locked state. To persistently protect a given sector

or sector group, the PPBs associated with that sector need to be set to “1”. Once

all PPBs are programmed to the desired settings, the PPB Lock should be set to

“1”. Setting the PPB Lock automatically disables all program and erase commands

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to the Non-Volatile PPBs. In effect, the PPB Lock “freezes” the PPBs into their cur-

rent state. The only way to clear the PPB Lock is to go through a power cycle.

It is possible to have sectors that have been persistently locked, and sectors that

are left in the dynamic state. The sectors in the dynamic state are all unprotected.

If there is a need to protect some of them, a simple DYB Write command se-

quence is all that is necessary. The DYB write command for the dynamic sectors

switch the DYBs to signify protected and unprotected, respectively. If there is a

need to change the status of the persistently locked sectors, a few more steps

are required. First, the PPB Lock bit must be disabled by either putting the device

through a power-cycle, or hardware reset. The PPBs can then be changed to re-

flect the desired settings. Setting the PPB lock bit once again will lock the PPBs,

and the device operates normally again.

The best protection is achieved by executing the PPB lock bit set command early

in the boot code, and protect the boot code by holding WP#/ACC = VIL.

Table 17 contains all possible combinations of the DYB, PPB, and PPB lock relating

to the status of the sector.

In summary, if the PPB is set, and the PPB lock is set, the sector is protected and

the protection can not be removed until the next power cycle clears the PPB lock.

If the PPB is cleared, the sector can be dynamically locked or unlocked. The DYB

then controls whether or not the sector is protected or unprotected.

If the user attempts to program or erase a protected sector, the device ignores

the command and returns to read mode. A program command to a protected sec-

tor enables status polling for approximately 1 µs before the device returns to read

mode without having modified the contents of the protected sector. An erase

command to a protected sector enables status polling for approximately 50 µs

after which the device returns to read mode without having erased the protected

sector.

The programming of the DYB, PPB, and PPB lock for a given sector can be verified

by writing a DYB/PPB/PPB lock verify command to the device. There is an alter-

native means of reading the protection status. Take RESET# to VIL and hold WE#

at VIH.(The high voltage A9 Autoselect Mode also works for reading the status of

the PPBs). Scanning the addresses (A18–A11) while (A6, A1, A0) = (0, 1, 0) will

produce a logical ‘1” code at device output DQ0 for a protected sector or a “0” for

an unprotected sector. In this mode, the other addresses are don’t cares. Address

location with A1 = VIL are reserved for autoselect manufacturer and device

codes.

Persistent Sector Protection Mode Locking Bit

Like the password mode locking bit, a Persistent Sector Protection mode locking

bit exists to guarantee that the device remain in software sector protection. Once

set, the Persistent Sector Protection locking bit prevents programming of the

password protection mode locking bit. This guarantees that a hacker could not

place the device in password protection mode.

Password Protection Mode

The Password Sector Protection Mode method allows an even higher level of se-

curity than the Persistent Sector Protection Mode. There are two main differences

between the Persistent Sector Protection and the Password Sector Protection

Mode:

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When the device is first powered on, or comes out of a reset cycle, the PPB Lock

bit set to the locked state, rather than cleared to the unlocked state.

The only means to clear the PPB Lock bit is by writing a unique 64-bit Password

to the device.

The Password Sector Protection method is otherwise identical to the Persistent

Sector Protection method.

A 64-bit password is the only additional tool utilized in this method.

Once the Password Mode Locking Bit is set, the password is permanently set with

no means to read, program, or erase it. The password is used to clear the PPB

Lock bit. The Password Unlock command must be written to the Flash, along with

a password. The Flash device internally compares the given password with the

pre-programmed password. If they match, the PPB Lock bit is cleared, and the

PPBs can be altered. If they do not match, the Flash device does nothing. There

is a built-in 2 µs delay for each “password check.” This delay is intended to thwart

any efforts to run a program that tries all possible combinations in order to crack

the password.

Password and Password Mode Locking Bit

In order to select the Password sector protection scheme, the customer must first

program the password. The password may be correlated to the unique Electronic

Serial Number (ESN) of the particular Flash device. Each ESN is different for

every Flash device; therefore each password should be different for every Flash

device. While programming in the password region, the customer may perform

Password Verify operations.

Once the desired password is programmed in, the customer must then set the

Password Mode Locking Bit. This operation achieves two objectives:

Permanently sets the device to operate using the Password Protection Mode. It is

not possible to reverse this function.

Disables all further commands to the password region. All program, and read op-

erations are ignored.

Both of these objectives are important, and if not carefully considered, may lead

to unrecoverable errors. The user must be sure that the Password Protection

method is desired when setting the Password Mode Locking Bit. More importantly,

the user must be sure that the password is correct when the Password Mode

Locking Bit is set. Due to the fact that read operations are disabled, there is no

means to verify what the password is afterwards. If the password is lost after set-

ting the Password Mode Locking Bit, there will be no way to clear the PPB Lock bit.

The Password Mode Locking Bit, once set, prevents reading the 64-bit password

on the DQ bus and further password programming. The Password Mode Locking

Bit is not erasable. Once Password Mode Locking Bit is programmed, the Persis-

tent Sector Protection Locking Bit is disabled from programming, guaranteeing

that no changes to the protection scheme are allowed.

64-bit Password

The 64-bit Password is located in its own memory space and is accessible through

the use of the Password Program and Verify commands (see “Password Verify

Command”). The password function works in conjunction with the Password

Mode Locking Bit, which when set, prevents the Password Verify command from

reading the contents of the password on the pins of the device.

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Write Protect (WP#)

The Write Protect feature provides a hardware method of protecting the upper

two and lower two sectors(PL127J: 0, 1, 268, and 269, PL064J: 0, 1, 140, and

141, PL032J: 0, 1, 76, and 77, PL129J: SA1-133, SA1-134,SA2-0 and SA2-1)

without using V_ID. This function is provided by the WP# pin and overrides the pre-

viously discussed High Voltage Sector Protection method.

If the system asserts V_ILon the WP#/ACC pin, the device disables program and

erase functions in the two outermost 4 Kword sectors on both ends of the Flash

array independent of whether it was previously protected or unprotected.

If the system asserts V_IHon the WP#/ACC pin, the device reverts the upper two

and lower two sectors to whether they were last set to be protected or unpro-

tected. That is, sector protection or unprotection for these sectors depends on

whether they were last protected or unprotected using the method described in

the High Voltage Sector Protection.

Note that the WP#/ACC pin must not be left floating or unconnected; inconsistent

behavior of the device may result.

Persistent Protection Bit Lock

The Persistent Protection Bit (PPB) Lock is a volatile bit that reflects the state of

the Password Mode Locking Bit after power-up reset. If the Password Mode Lock

Bit is also set after a hardware reset (RESET# asserted) or a power-up reset, the

ONLY means for clearing the PPB Lock Bit in Password Protection Mode is to issue

the Password Unlock command. Successful execution of the Password Unlock

command clears the PPB Lock Bit, allowing for sector PPBs modifications. Assert-

ing RESET#, taking the device through a power-on reset, or issuing the PPB Lock

Bit Set command sets the PPB Lock Bit to a “1” when the Password Mode Lock Bit

is not set.

If the Password Mode Locking Bit is not set, including Persistent Protection Mode,

the PPB Lock Bit is cleared after power-up or hardware reset. The PPB Lock Bit is

set by issuing the PPB Lock Bit Set command. Once set the only means for clear-

ing the PPB Lock Bit is by issuing a hardware or power-up reset. The Password

Unlock command is ignored in Persistent Protection Mode.

High Voltage Sector Protection

Sector protection and unprotection may also be implemented using programming

equipment. The procedure requires high voltage (V_ID) to be placed on the RE-

SET# pin. Refer to Figure 1 for details on this procedure. Note that for sector

unprotect, all unprotected sectors must first be protected prior to the first sector

write cycle.

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START

Protect all sectors:

The indicated portion

of the sector protect

algorithm must be

performed for all

PLSCNT = 1

RESET# = V_ID

unprotected sectors

prior to issuing the

first sector

Wait 4 µs

unprotect address

No

First Write

Cycle = 60h?

First Write

Cycle = 60h?

Temporary Sector

Unprotect Mode

Temporary Sector

Unprotect Mode

Yes

Set up sector

address

No

All sectors

protected?

Sector Protect:

Write 60h to sector

address with

A7-A0 =

Yes

Set up first sector

address

00000010

Sector Unprotect:

Wait 100 µs

Write 60h to sector

address with

A7-A0 =

Verify Sector

Protect: Write 40h

to sector address

with A7-A0 =

01000010

Reset

PLSCNT = 1

Increment

PLSCNT

Wait 1.2 ms

00000010

Verify Sector

Unprotect: Write

40h to sector

address with

A7-A0 =

Read from

sector address

with A7-A0 =

00000010

Increment

PLSCNT

No

00000010

No

PLSCNT

= 25?

Read from

sector address

with A7-A0 =

00000010

Data = 01h?

Yes

No

Yes

Set up

next sector

address

Yes

Remove V_ID

from RESET#

No

PLSCNT

= 1000?

Protect another

sector?

Data = 00h?

Yes

No

Write reset

command

Yes

Remove V_ID

from RESET#

Remove V_ID

from RESET#

No

Last sector

verified?

Sector Protect

complete

Write reset

command

Yes

Write reset

command

Remove V_ID

from RESET#

Device failed

Sector Protect

complete

Sector Unprotect

complete

Write reset

command

Sector Protect

Algorithm

Device failed

Sector Unprotect

complete

Sector Unprotect

Algorithm

Figure 1. In-System Sector Protection/Sector Unprotection Algorithms

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Temporary Sector Unprotect

This feature allows temporary unprotection of previously protected sectors to

change data in-system. The Sector Unprotect mode is activated by setting the

RESET# pin to V_ID. During this mode, formerly protected sectors can be pro-

grammed or erased by selecting the sector addresses. Once V_IDis removed from

the RESET# pin, all the previously protected sectors are protected again. 2 shows

the algorithm, and 21 shows the timing diagrams, for this feature. While PPB lock

is set, the device cannot enter the Temporary Sector Unprotection Mode.

START

RESET# = V_ID

(Note 1)

Perform Erase or

Program Operations

RESET# = V_IH

Temporary Sector

Unprotect Completed

(Note 2)

Notes:

1. All protected sectors unprotected (If WP#/ACC = V_IL, upper two and lower two

sectors will remain protected).

2. All previously protected sectors are protected once again

Figure 2. Temporary Sector Unprotect Operation

SecSi™ (Secured Silicon) Sector Flash Memory Region

The SecSi (Secured Silicon) Sector feature provides a Flash memory region that

enables permanent part identification through an Electronic Serial Number (ESN)

The 128-word SecSi sector is divided into 64 factory-lockable words that can be

programmed and locked by the customer. The SecSi sector is located at ad-

dresses 000000h-00007Fh in both Persistent Protection mode and Password

Protection mode. It uses indicator bits (DQ6, DQ7) to indicate the factory-locked

and customer-locked status of the part.

The system accesses the SecSi Sector through a command sequence (see the

Enter SecSi™ Sector/Exit SecSi Sector Command Sequence). After the system

has written the Enter SecSi Sector command sequence, it may read the SecSi

Sector by using the addresses normally occupied by the boot sectors. This mode

of operation continues until the system issues the Exit SecSi Sector command se-

quence, or until power is removed from the device. On power-up, or following a

hardware reset, the device reverts to sending commands to the normal address

space. Note that the ACC function and unlock bypass modes are not available

when the SecSi Sector is enabled.

Factory-Locked Area (64 words)

The factory-locked area of the SecSi Sector (000000h-00003Fh) is locked when

the part is shipped, whether or not the area was programmed at the factory. The

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SecSi Sector Factory-locked Indicator Bit (DQ7) is permanently set to a “1”. Op-

tional Spansion programming services can program the factory-locked area with

a random ESN, a customer-defined code, or any combination of the two. Because

only FASL can program and protect the factory-locked area, this method ensures

the security of the ESN once the product is shipped to the field. Contact your local

sales office for details on using Spansion’s programming services. Note that the

ACC function and unlock bypass modes are not available when the SecSi sector

is enabled.

Customer-Lockable Area (64 words)

The customer-lockable area of the SecSi Sector (000040h-00007Fh) is shipped

unprotected, which allows the customer to program and optionally lock the area

as appropriate for the application. The SecSi Sector Customer-locked Indicator

Bit (DQ6) is shipped as “0” and can be permanently locked to “1” by issuing the

SecSi Protection Bit Program Command. The SecSi Sector can be read any num-

ber of times, but can be programmed and locked only once. Note that the

accelerated programming (ACC) and unlock bypass functions are not available

when programming the SecSi Sector.

The Customer-lockable SecSi Sector area can be protected using one of the

following procedures:

Write the three-cycle Enter SecSi Sector Region command sequence, and

then follow the in-system sector protect algorithm as shown in Figure 1, ex-

cept that RESET# may be at either V_IHor V_ID. This allows in-system protec-

tion of the SecSi Sector Region without raising any device pin to a high

voltage. Note that this method is only applicable to the SecSi Sector.

To verify the protect/unprotect status of the SecSi Sector, follow the algo-

rithm shown in Figure 3.

Once the SecSi Sector is locked and verified, the system must write the Exit SecSi

Sector Region command sequence to return to reading and writing the remainder

of the array.

The SecSi Sector lock must be used with caution since, once locked, there is no

procedure available for unlocking the SecSi Sector area and none of the bits in

the SecSi Sector memory space can be modified in any way.

SecSi Sector Protection Bits

The SecSi Sector Protection Bits prevent programming of the SecSi Sector mem-

ory area. Once set, the SecSi Sector memory area contents are non-modifiable.

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START

If data = 00h,

SecSi Sector is

unprotected.

If data = 01h,

SecSi Sector is

protected.

RESET# =

V_IHor V_ID

Wait 1 µs

Write 60h to

any address

Remove V_IHor V_ID

from RESET#

Write 40h to SecSi

Sector address

with A6 = 0,

Write reset

command

A1 = 1, A0 = 0

SecSi Sector

Protect Verify

complete

Read from SecSi

Sector address

with A6 = 0,

A1 = 1, A0 = 0

Figure 3. SecSi Sector Protect Verify

Hardware Data Protection

The command sequence requirement of unlock cycles for programming or erasing

provides data protection against inadvertent writes. In addition, the following

hardware data protection measures prevent accidental erasure or programming,

which might otherwise be caused by spurious system level signals during V_CC

power-up and power-down transitions, or from system noise.

Low V

Write Inhibit

CC

When V_CCis less than V_LKO, the device does not accept any write cycles. This pro-

tects data during V_CCpower-up and power-down. The command register and all

internal program/erase circuits are disabled, and the device resets to the read

mode. Subsequent writes are ignored until V_CCis greater than V_LKO. The system

must provide the proper signals to the control pins to prevent unintentional writes

when V_CCis greater than V_LKO

.

Write Pulse “Glitch” Protection

Noise pulses of less than 3 ns (typical) on OE#, CE#, or WE# do not initiate a

write cycle.

Logical Inhibit

Write cycles are inhibited by holding any one of OE# = V_IL, CE# = V_IHor WE# =

V_IH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a

logical one.

Power-Up Write Inhibit

If WE# = CE# = V_ILand OE# = V_IHduring power up, the device does not accept

commands on the rising edge of WE#. The internal state machine is automatically

reset to the read mode on power-up.

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Common Flash Memory Interface (CFI)

The Common Flash Interface (CFI) specification outlines device and host system

software interrogation handshake, which allows specific vendor-specified soft-

ware algorithms to be used for entire families of devices. Software support can

then be device-independent, JEDEC ID-independent, and forward- and back-

ward-compatible for the specified Flash device families. Flash vendors can

standardize their existing interfaces for long-term compatibility.

This device enters the CFI Query mode when the system writes the CFI Query

command, 98h, to address 55h, any time the device is ready to read array data.

The system can read CFI information at the addresses given in Tables 13–16. To

terminate reading CFI data, the system must write the reset command. The CFI

Query mode is not accessible when the device is executing an Embedded Program

or embedded Erase algorithm.

The system can also write the CFI query command when the device is in the au-

toselect mode. The device enters the CFI query mode, and the system can read

CFI data at the addresses given in Tables 13–16. The system must write the reset

command to return the device to reading array data.

For further information, please refer to the CFI Specification and CFI Publication

100. Contact your local sales office for copies of these documents.

Table 13. CFI Query Identification String

Addresses

Data

Description

10h

11h

12h

0051h

0052h

0059h

Query Unique ASCII string “QRY”

Primary OEM Command Set

13h

14h

0002h

0000h

15h

16h

0040h

0000h

Address for Primary Extended Table

17h

18h

0000h

Alternate OEM Command Set (00h = none exists)

Address for Alternate OEM Extended Table (00h = none exists)

19h

1Ah

0000h

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Table 14. System Interface String

Addresses

Data

Description

V_CCMin. (write/erase)

D7–D4: volt, D3–D0: 100 millivolt

1Bh

0027h

V_CCMax. (write/erase)

D7–D4: volt, D3–D0: 100 millivolt

1Ch

0036h

1Dh

1Eh

1Fh

20h

21h

22h

23h

24h

25h

26h

0000h

0003h

0000h

0009h

0000h

0004h

0000h

0004h

0000h

V_PPMin. voltage (00h = no V_PPpin present)

V_PPMax. voltage (00h = no V_PPpin present)

Typical timeout per single byte/word write 2^Nµs

Typical timeout for Min. size buffer write 2^N

µs (00h = not supported)

Typical timeout per individual block erase 2^Nms

Typical timeout for full chip erase 2^Nms (00h = not supported)

Max. timeout for byte/word write 2^Ntimes typical

Max. timeout for buffer write 2^Ntimes typical

Max. timeout per individual block erase 2^Ntimes typical

Max. timeout for full chip erase 2^Ntimes typical (00h = not supported)

Table 15. Device Geometry Definition

Addresses

Data

Description

0018h (PL127J)

0017h (PL064J)

0016h (PL032J)

27h

Device Size = 2^Nbyte

28h

29h

0001h

0000h

Flash Device Interface description (refer to CFI publication 100)

2Ah

2Bh

0000h

Max. number of byte in multi-byte write = 2^N

(00h = not supported)

2Ch

0003h

Number of Erase Block Regions within device

2Dh

2Eh

2Fh

30h

0007h

0000h

0020h

0000h

Erase Block Region 1 Information

(refer to the CFI specification or CFI publication 100)

00FDh (PL127J)

007Dh (PL064J)

003Dh (PL032J)

31h

Erase Block Region 2 Information

(refer to the CFI specification or CFI publication 100)

32h

33h

34h

0000h

0001h

35h

36h

37h

38h

0007h

0000h

0020h

0000h

Erase Block Region 3 Information

(refer to the CFI specification or CFI publication 100)

39h

3Ah

3Bh

3Ch

0000h

Erase Block Region 4 Information

(refer to the CFI specification or CFI publication 100)

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Table 16. Primary Vendor-Specific Extended Query

Addresses

Data

Description

40h

41h

42h

0050h

0052h

0049h

Query-unique ASCII string “PRI”

43h

44h

0031h

0033h

Major version number, ASCII (reflects modifications to the silicon)

Minor version number, ASCII (reflects modifications to the CFI table)

Address Sensitive Unlock (Bits 1-0)

0 = Required, 1 = Not Required

45h

TBD

Silicon Revision Number (Bits 7-2)

Erase Suspend

0 = Not Supported, 1 = To Read Only, 2 = To Read & Write

46h

47h

48h

49h

0002h

0001h

Sector Protect

0 = Not Supported, X = Number of sectors in per group

Sector Temporary Unprotect

00 = Not Supported, 01 = Supported

0001h

Sector Protect/Unprotect scheme

07 = Advanced Sector Protection

0007h (PLxxxJ)

00E7h (PL127J)

0077h (PL064J)

003Fh (PL032J)

Simultaneous Operation

00 = Not Supported, X = Number of Sectors excluding Bank 1

4Ah

Burst Mode Type

00 = Not Supported, 01 = Supported

4Bh

4Ch

4Dh

4Eh

0000h

0002h (PLxxxJ)

0085h

Page Mode Type

00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page

ACC (Acceleration) Supply Minimum

00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV

ACC (Acceleration) Supply Maximum

00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV

0095h

Top/Bottom Boot Sector Flag

00h = Uniform device, 01h = Both top and bottom boot with write protect,

02h = Bottom Boot Device, 03h = Top Boot Device,

04h = Both Top and Bottom

4Fh

0001h

Program Suspend

0 = Not supported, 1 = Supported

50h

57h

0001h

0004h

Bank Organization

00 = Data at 4Ah is zero, X = Number of Banks

0027h (PL127J)

0017h (PL064J)

000Fh (PL032J)

Bank 1 Region Information

X = Number of Sectors in Bank 1

58h

59h

5Ah

0060h (PL127J)

0030h (PL064J)

0018h (PL032J)

Bank 2 Region Information

X = Number of Sectors in Bank 2

0060h (PL127J)

0030h (PL064J)

0018h (PL032J)

Bank 3 Region Information

X = Number of Sectors in Bank 3

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Table 16. Primary Vendor-Specific Extended Query (Continued)

Addresses

Data

Description

0027h (PL127J)

0017h (PL064J)

000Fh (PL032J)

Bank 4 Region Information

X = Number of Sectors in Bank 4

5Bh

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Command Definitions

Writing specific address and data commands or sequences into the command

register initiates device operations. Table 17 defines the valid register command

sequences. Writing incorrect address and data values or writing them in the

improper sequence may place the device in an unknown state. A reset com-

mand is then required to return the device to reading array data.

All addresses are latched on the falling edge of WE# or CE#, whichever happens

later. All data is latched on the rising edge of WE# or CE#, whichever happens

first. Refer to the AC Characteristic section for timing diagrams.

Reading Array Data

The device is automatically set to reading array data after device power-up. No

commands are required to retrieve data. Each bank is ready to read array data

after completing an Embedded Program or Embedded Erase algorithm.

After the device accepts an Erase Suspend command, the corresponding bank

enters the erase-suspend-read mode, after which the system can read data from

any non-erase-suspended sector within the same bank. The system can read

array data using the standard read timing, except that if it reads at an address

within erase-suspended sectors, the device outputs status data. After completing

a programming operation in the Erase Suspend mode, the system may once

again read array data with the same exception. See the Erase Suspend/Erase Re-

sume Commands section for more information.

The system must issue the reset command to return a bank to the read (or erase-

suspend-read) mode if DQ5 goes high during an active program or erase opera-

tion, or if the bank is in the autoselect mode. See the next section, Reset

Command, for more information.

See also Requirements for Reading Array Data in the Device Bus Operations sec-

tion for more information. The AC Characteristic table provides the read

parameters, and Figure 12 shows the timing diagram.

Reset Command

Writing the reset command resets the banks to the read or erase-suspend-read

mode. Address bits are don’t cares for this command.

The reset command may be written between the sequence cycles in an erase

command sequence before erasing begins. This resets the bank to which the sys-

tem was writing to the read mode. Once erasure begins, however, the device

ignores reset commands until the operation is complete.

The reset command may be written between the sequence cycles in a program

command sequence before programming begins. This resets the bank to which

the system was writing to the read mode. If the program command sequence is

written to a bank that is in the Erase Suspend mode, writing the reset command

returns that bank to the erase-suspend-read mode. Once programming begins,

however, the device ignores reset commands until the operation is complete.

The reset command may be written between the sequence cycles in an autoselect

command sequence. Once in the autoselect mode, the reset command must be

written to return to the read mode. If a bank entered the autoselect mode while

in the Erase Suspend mode, writing the reset command returns that bank to the

erase-suspend-read mode.

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If DQ5 goes high during a program or erase operation, writing the reset command

returns the banks to the read mode (or erase-suspend-read mode if that bank

was in Erase Suspend).

Autoselect Command Sequence

The autoselect command sequence allows the host system to access the manu-

facturer and device codes, and determine whether or not a sector is protected.

The autoselect command sequence may be written to an address within a bank

that is either in the read or erase-suspend-read mode. The autoselect command

may not be written while the device is actively programming or erasing in the

other bank.

The autoselect command sequence is initiated by first writing two unlock cycles.

This is followed by a third write cycle that contains the bank address and the au-

toselect command. The bank then enters the autoselect mode. The system may

read any number of autoselect codes without reinitiating the command sequence.

Table 17 shows the address and data requirements. To determine sector protec-

tion information, the system must write to the appropriate bank address (BA) and

sector address (SA). Table 3 shows the address range and bank number associ-

ated with each sector.

The system must write the reset command to return to the read mode (or erase-

suspend-read mode if the bank was previously in Erase Suspend).

Enter SecSi™ Sector/Exit SecSi Sector Command Sequence

The SecSi Sector region provides a secured data area containing a random, eight

word electronic serial number (ESN). The system can access the SecSi Sector re-

gion by issuing the three-cycle Enter SecSi Sector command sequence. The

device continues to access the SecSi Sector region until the system issues the

four-cycle Exit SecSi Sector command sequence. The Exit SecSi Sector command

sequence returns the device to normal operation. The SecSi Sector is not acces-

sible when the device is executing an Embedded Program or embedded Erase

algorithm. Table 17 shows the address and data requirements for both command

sequences. See also “SecSi™ (Secured Silicon) Sector Flash Memory Region” for

further information. Note that the ACC function and unlock bypass modes are not

available when the SecSi Sector is enabled.

Word Program Command Sequence

Programming is a four-bus-cycle operation. The program command sequence is

initiated by writing two unlock write cycles, followed by the program set-up com-

mand. The program address and data are written next, which in turn initiate the

Embedded Program algorithm. The system is not required to provide further con-

trols or timings. The device automatically provides internally generated program

pulses and verifies the programmed cell margin. Table 17 shows the address and

data requirements for the program command sequence. Note that the SecSi Sec-

tor, autoselect, and CFI functions are unavailable when a [program/erase]

operation is in progress.

When the Embedded Program algorithm is complete, that bank then returns to

the read mode and addresses are no longer latched. The system can determine

the status of the program operation by using DQ7, DQ6, or RY/BY#. Refer to the

Write Operation Status section for information on these status bits.

Any commands written to the device during the Embedded Program Algorithm

are ignored. Note that a hardware reset immediately terminates the program

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operation. The program command sequence should be reinitiated once that bank

has returned to the read mode, to ensure data integrity. Note that the SecSi Sec-

tor, autoselect and CFI functions are unavailable when the SecSi Sector is

enabled.

Programming is allowed in any sequence and across sector boundaries. A bit

cannot be programmed from “0” back to a “1.” Attempting to do so may

cause that bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate

the operation was successful. However, a succeeding read will show that the data

is still “0.” Only erase operations can convert a “0” to a “1.”

Unlock Bypass Command Sequence

The unlock bypass feature allows the system to program data to a bank faster

than using the standard program command sequence. The unlock bypass com-

mand sequence is initiated by first writing two unlock cycles. This is followed by

a third write cycle containing the unlock bypass command, 20h. That bank then

enters the unlock bypass mode. A two-cycle unlock bypass program command

sequence is all that is required to program in this mode. The first cycle in this se-

quence contains the unlock bypass program command, A0h; the second cycle

contains the program address and data. Additional data is programmed in the

same manner. This mode dispenses with the initial two unlock cycles required in

the standard program command sequence, resulting in faster total programming

time. Table 17 shows the requirements for the command sequence.

During the unlock bypass mode, only the Unlock Bypass Program and Unlock By-

pass Reset commands are valid. To exit the unlock bypass mode, the system

must issue the two-cycle unlock bypass reset command sequence. (See Table 18)

The device offers accelerated program operations through the WP#/ACC pin.

When the system asserts V_HHon the WP#/ACC pin, the device automatically en-

ters the Unlock Bypass mode. The system may then write the two-cycle Unlock

Bypass program command sequence. The device uses the higher voltage on the

WP#/ACC pin to accelerate the operation. Note that the WP#/ACC pin must not

be at V_HHany operation other than accelerated programming, or device damage

may result. In addition, the WP#/ACC pin must not be left floating or uncon-

nected; inconsistent behavior of the device may result.

4 illustrates the algorithm for the program operation. Refer to the Erase/Program

Operations table in the AC Characteristics section for parameters, and Figure 14

for timing diagrams.

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START

Write Program

Command Sequence

Data Poll

from System

Embedded

Program

algorithm

in progress

Verify Data?

Yes

No

Increment Address

Last Address?

Yes

Programming

Completed

Note: See Table 17 for program command sequence.

Figure 4. Program Operation

Chip Erase Command Sequence

Chip erase is a six bus cycle operation. The chip erase command sequence is ini-

tiated by writing two unlock cycles, followed by a set-up command. Two

additional unlock write cycles are then followed by the chip erase command,

which in turn invokes the Embedded Erase algorithm. The device does not require

the system to preprogram prior to erase. The Embedded Erase algorithm auto-

matically preprograms and verifies the entire memory for an all zero data pattern

prior to electrical erase. The system is not required to provide any controls or tim-

ings during these operations. Table 17 shows the address and data requirements

for the chip erase command sequence.

When the Embedded Erase algorithm is complete, that bank returns to the read

mode and addresses are no longer latched. The system can determine the status

of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to the Write

Operation Status section for information on these status bits.

Any commands written during the chip erase operation are ignored. Note that

SecSi Sector, autoselect, and CFI functions are unavailable when a [program/

erase] operation is in progress. However, note that a hardware reset immedi-

ately terminates the erase operation. If that occurs, the chip erase command

sequence should be reinitiated once that bank has returned to reading array data,

to ensure data integrity.

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5 illustrates the algorithm for the erase operation. Refer to the Erase/Program

Operations tables in the AC Characteristics section for parameters, and Figure 16

section for timing diagrams.

Sector Erase Command Sequence

Sector erase is a six bus cycle operation. The sector erase command sequence is

initiated by writing two unlock cycles, followed by a set-up command. Two addi-

tional unlock cycles are written, and are then followed by the address of the

sector to be erased, and the sector erase command. Table 17 shows the address

and data requirements for the sector erase command sequence.

The device does not require the system to preprogram prior to erase. The Em-

bedded Erase algorithm automatically programs and verifies the entire memory

for an all zero data pattern prior to electrical erase. The system is not required to

provide any controls or timings during these operations.

After the command sequence is written, a sector erase time-out of 50 µs occurs.

During the time-out period, additional sector addresses and sector erase com-

mands may be written. Loading the sector erase buffer may be done in any

sequence, and the number of sectors may be from one sector to all sectors. The

time between these additional cycles must be less than 50 µs, otherwise erasure

may begin. Any sector erase address and command following the exceeded time-

out may or may not be accepted. It is recommended that processor interrupts be

disabled during this time to ensure all commands are accepted. The interrupts

can be re-enabled after the last Sector Erase command is written. Any com-

mand other than Sector Erase or Erase Suspend during the time-out

period resets that bank to the read mode. The system must rewrite the com-

mand sequence and any additional addresses and commands. Note that SecSi

Sector, autoselect, and CFI functions are unavailable when a [program/erase]

operation is in progress.

The system can monitor DQ3 to determine if the sector erase timer has timed out

(See the section on DQ3: Sector Erase Timer). The time-out begins from the ris-

ing edge of the final WE# pulse in the command sequence.

When the Embedded Erase algorithm is complete, the bank returns to reading

array data and addresses are no longer latched. Note that while the Embedded

Erase operation is in progress, the system can read data from the non-erasing

bank. The system can determine the status of the erase operation by reading

DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer to the Write Operation Sta-

tus section for information on these status bits.

Once the sector erase operation has begun, only the Erase Suspend command is

valid. All other commands are ignored. However, note that a hardware reset im-

mediately terminates the erase operation. If that occurs, the sector erase

command sequence should be reinitiated once that bank has returned to reading

array data, to ensure data integrity.

5 illustrates the algorithm for the erase operation. Refer to the Erase/Program

Operations tables in the AC Characteristics section for parameters, and Figure 16

section for timing diagrams.

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START

Write Erase

Command Sequence

(Notes 1, 2)

Data Poll to Erasing

Bank from System

Embedded

Erase

algorithm

in progress

No

Data = FFh?

Yes

Erasure Completed

Notes:

1. See Table 17 for erase command sequence.

2. See the section on DQ3 for information on the sector erase timer.

Figure 5. Erase Operation

Erase Suspend/Erase Resume Commands

The Erase Suspend command, B0h, allows the system to interrupt a sector erase

operation and then read data from, or program data to, any sector not selected

for erasure. The bank address is required when writing this command. This com-

mand is valid only during the sector erase operation, including the 80 µs time-out

period during the sector erase command sequence. The Erase Suspend command

is ignored if written during the chip erase operation or Embedded Program

algorithm.

When the Erase Suspend command is written during the sector erase operation,

the device requires a maximum of 35 µs to suspend the erase operation. How-

ever, when the Erase Suspend command is written during the sector erase

time-out, the device immediately terminates the time-out period and suspends

the erase operation. Addresses are “don’t-cares” when writing the Erase suspend

command.

After the erase operation has been suspended, the bank enters the erase-sus-

pend-read mode. The system can read data from or program data to any sector

not selected for erasure. (The device “erase suspends” all sectors selected for

erasure.) Reading at any address within erase-suspended sectors produces sta-

tus information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2

together, to determine if a sector is actively erasing or is erase-suspended. Refer

to the Write Operation Status section for information on these status bits.

After an erase-suspended program operation is complete, the bank returns to the

erase-suspend-read mode. The system can determine the status of the program

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operation using the DQ7 or DQ6 status bits, just as in the standard Word Program

operation. Refer to the Write Operation Status section for more information.

In the erase-suspend-read mode, the system can also issue the autoselect com-

mand sequence. The device allows reading autoselect codes even at addresses

within erasing sectors, since the codes are not stored in the memory array. When

the device exits the autoselect mode, the device reverts to the Erase Suspend

mode, and is ready for another valid operation. Refer to the SecSiTM Sector Ad-

dresses and the Autoselect Command Sequence sections for details.

To resume the sector erase operation, the system must write the Erase Resume

command (address bits are don’t care). The bank address of the erase-sus-

pended bank is required when writing this command. Further writes of the

Resume command are ignored. Another Erase Suspend command can be written

after the chip has resumed erasing.

Password Program Command

The Password Program Command permits programming the password that is

used as part of the hardware protection scheme. The actual password is 64-bits

long. Four Password Program commands are required to program the password.

The system must enter the unlock cycle, password program command (38h) and

the program address/data for each portion of the password when programming.

There are no provisions for entering the 2-cycle unlock cycle, the password pro-

gram command, and all the password data. There is no special addressing order

required for programming the password. Also, when the password is undergoing

programming, Simultaneous Operation is disabled. Read operations to any mem-

ory location will return the programming status. Once programming is complete,

the user must issue a Read/Reset command to return the device to normal oper-

ation. Once the Password is written and verified, the Password Mode Locking Bit

must be set in order to prevent verification. The Password Program Command is

only capable of programming “0”s. Programming a “1” after a cell is programmed

as a “0” results in a time-out by the Embedded Program Algorithm™ with the cell

remaining as a “0”. The password is all ones when shipped from the factory. All

64-bit password combinations are valid as a password.

Password Verify Command

The Password Verify Command is used to verify the Password. The Password is

verifiable only when the Password Mode Locking Bit is not programmed. If the

Password Mode Locking Bit is programmed and the user attempts to verify the

Password, the device will always drive all F’s onto the DQ data bus.

The Password Verify command is permitted if the SecSi sector is enabled. Also,

the device will not operate in Simultaneous Operation when the Password Verify

command is executed. Only the password is returned regardless of the bank ad-

dress. The lower two address bits (A1-A0) are valid during the Password Verify.

Writing the Read/Reset command returns the device back to normal operation.

Password Protection Mode Locking Bit Program Command

The Password Protection Mode Locking Bit Program Command programs the

Password Protection Mode Locking Bit, which prevents further verifies or updates

to the Password. Once programmed, the Password Protection Mode Locking Bit

cannot be erased! If the Password Protection Mode Locking Bit is verified as pro-

gram without margin, the Password Protection Mode Locking Bit Program

command can be executed to improve the program margin. Once the Password

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Protection Mode Locking Bit is programmed, the Persistent Sector Protection

Locking Bit program circuitry is disabled, thereby forcing the device to remain in

the Password Protection mode. Exiting the Mode Locking Bit Program command

is accomplished by writing the Read/Reset command.

Persistent Sector Protection Mode Locking Bit Program Command

The Persistent Sector Protection Mode Locking Bit Program Command programs

the Persistent Sector Protection Mode Locking Bit, which prevents the Password

Mode Locking Bit from ever being programmed. If the Persistent Sector Protec-

tion Mode Locking Bit is verified as programmed without margin, the Persistent

Sector Protection Mode Locking Bit Program Command should be reissued to im-

prove program margin. By disabling the program circuitry of the Password Mode

Locking Bit, the device is forced to remain in the Persistent Sector Protection

mode of operation, once this bit is set. Exiting the Persistent Protection Mode

Locking Bit Program command is accomplished by writing the Read/Reset

command.

SecSi Sector Protection Bit Program Command

The SecSi Sector Protection Bit Program Command programs the SecSi Sector

Protection Bit, which prevents the SecSi sector memory from being cleared. If the

SecSi Sector Protection Bit is verified as programmed without margin, the SecSi

Sector Protection Bit Program Command should be reissued to improve program

margin. Exiting the V_CC-level SecSi Sector Protection Bit Program Command is

accomplished by writing the Read/Reset command.

PPB Lock Bit Set Command

The PPB Lock Bit Set command is used to set the PPB Lock bit if it is cleared either

at reset or if the Password Unlock command was successfully executed. There is

no PPB Lock Bit Clear command. Once the PPB Lock Bit is set, it cannot be cleared

unless the device is taken through a power-on clear or the Password Unlock com-

mand is executed. Upon setting the PPB Lock Bit, the PPBs are latched into the

DYBs. If the Password Mode Locking Bit is set, the PPB Lock Bit status is reflected

as set, even after a power-on reset cycle. Exiting the PPB Lock Bit Set command

is accomplished by writing the Read/Reset command (only in the Persistent Pro-

tection Mode).

DYB Write Command

The DYB Write command is used to set or clear a DYB for a given sector. The high

order address bits (Amax–A12) are issued at the same time as the code 01h or

00h on DQ7-DQ0. All other DQ data bus pins are ignored during the data write

cycle. The DYBs are modifiable at any time, regardless of the state of the PPB or

PPB Lock Bit. The DYBs are cleared at power-up or hardware reset.Exiting the

DYB Write command is accomplished by writing the Read/Reset command.

Password Unlock Command

The Password Unlock command is used to clear the PPB Lock Bit so that the PPBs

can be unlocked for modification, thereby allowing the PPBs to become accessible

for modification. The exact password must be entered in order for the unlocking

function to occur. This command cannot be issued any faster than 2 µs at a time

to prevent a hacker from running through all 64-bit combinations in an attempt

to correctly match a password. If the command is issued before the 2 µs execu-

tion window for each portion of the unlock, the command will be ignored.

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Once the Password Unlock command is entered, the RY/BY# indicates that the

device is busy. Approximately 1 µs is required for each portion of the unlock. Once

the first portion of the password unlock completes (RY/BY# is not low or DQ6

does not toggle when read), the next part of the password is written. The system

must thus monitor RY/BY# or the status bits to confirm when to write the next

portion of the password. Seven cycles are required to successfully clear the PPB

Lock Bit.

PPB Program Command

The PPB Program command is used to program, or set, a given PPB. Each PPB is

individually programmed (but is bulk erased with the other PPBs). The specific

sector address (A22–A12) are written at the same time as the program command

60h with A6 = 0. If the PPB Lock Bit is set and the corresponding PPB is set for

the sector, the PPB Program command will not execute and the command will

time-out without programming the PPB.

After programming a PPB, two additional cycles are needed to determine whether

the PPB has been programmed with margin. If the PPB has been programmed

without margin, the program command should be reissued to improve the pro-

gram margin. Also note that the total number of PPB program/erase cycles is

limited to 100 cycles. Cycling the PPBs beyond 100 cycles is not guaranteed.

The PPB Program command does not follow the Embedded Program algorithm.

All PPB Erase Command

The All PPB Erase command is used to erase all PPBs in bulk. There is no means

for individually erasing a specific PPB. Unlike the PPB program, no specific sector

address is required. However, when the PPB erase command is written all Sector

PPBs are erased in parallel. If the PPB Lock Bit is set the ALL PPB Erase command

will not execute and the command will time-out without erasing the PPBs. After

erasing the PPBs, two additional cycles are needed to determine whether the PPB

has been erased with margin. If the PPBs has been erased without margin, the

erase command should be reissued to improve the program margin.

It is the responsibility of the user to preprogram all PPBs prior to issuing the All

PPB Erase command. If the user attempts to erase a cleared PPB, over-erasure

may occur making it difficult to program the PPB at a later time. Also note that

the total number of PPB program/erase cycles is limited to 100 cycles. Cycling the

PPBs beyond 100 cycles is not guaranteed.

DYB Write Command

The DYB Write command is used for setting the DYB, which is a volatile bit that

is cleared at reset. There is one DYB per sector. If the PPB is set, the sector is

protected regardless of the value of the DYB. If the PPB is cleared, setting the

DYB to a 1 protects the sector from programs or erases. Since this is a volatile

bit, removing power or resetting the device will clear the DYBs. The bank address

is latched when the command is written.

PPB Lock Bit Set Command

The PPB Lock Bit set command is used for setting the DYB, which is a volatile bit

that is cleared at reset. There is one DYB per sector. If the PPB is set, the sector

is protected regardless of the value of the DYB. If the PPB is cleared, setting the

DYB to a 1 protects the sector from programs or erases. Since this is a volatile

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bit, removing power or resetting the device will clear the DYBs. The bank address

is latched when the command is written.

Command

The programming of either the PPB or DYB for a given sector or sector group can

be verified by writing a Sector Protection Status command to the device.

Note that there is no single command to independently verify the programming

of a DYB for a given sector group.

Command Definitions Tables

Table 17. Memory Array Command Definitions

Bus Cycles (Notes 1–4)

Command (Notes)

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Read (Note 5)

Reset (Note 6)

1

RA

RD

F0

XXX

(BA)

555

(BA)

X00

Manufacturer ID

4

6

4

555

AA

2AA

55

90

01

(BA)

555

(BA)

X01

(BA)

X0E

(Note

10)

(BA)

X0F

(Note

10)

Device ID (Note 10)

227E

Autoselect

(Note 7)

SecSi Sector Factory

Protect (Note 8)

(BA)

555

(Note

8)

AA

X03

Sector Group Protect

Verify (Note 9)

(BA)

555

(SA) XX00/

X02

AAA

XX01

Program

4

6

1

2

3

2

1

2

555

BA

AA

B0

30

98

A0

AA

A0

80

98

90

2AA

55

555

A0

80

PA

PD

Chip Erase

Sector Erase

555

AA

2AA

55

555

SA

10

30

AA

Program/Erase Suspend (Note 11)

Program/Erase Resume (Note 12)

CFI Query (Note 13)

BA

55

Accelerated Program (Note 15)

Unlock Bypass Entry (Note 15)

Unlock Bypass Program (Note 15)

Unlock Bypass Erase (Note 15)

Unlock Bypass CFI (Notes 13, 15)

Unlock Bypass Reset (Note 15)

XX

PA

2AA

PA

PD

55

PD

10

555

XX

555

20

XX

XXX

00

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Legend:

BA = Address of bank switching to autoselect mode, bypass

mode, or erase operation. Determined by PL127J: Amax:A20,

PL064J: Amax:A19, PL032J: Amax:A18.

PA = Program Address (Amax:A0). Addresses latch on falling

edge of WE# or CE# pulse, whichever happens later.

PD = Program Data (DQ15:DQ0) written to location PA. Data

latches on rising edge of WE# or CE# pulse, whichever happens

first.

RA = Read Address (Amax:A0).

RD = Read Data (DQ15:DQ0) from location RA.

SA = Sector Address (Amax:A12) for verifying (in autoselect

mode) or erasing.

WD = Write Data. See “Configuration Register” definition for

specific write data. Data latched on rising edge of WE#.

X = Don’t care

Notes:

1. See Table 1 for description of bus operations.

2. All values are in hexadecimal.

9. The data is 00h for an unprotected sector group and 01h for

a protected sector group.

10. Device ID must be read across cycles 4, 5, and 6. PL127J

(X0Eh = 2220h, X0Fh = 2200h),PL064J (X0Eh = 2202h,

X0Fh = 2201h), PL032J (X0Eh = 220Ah, X0Fh = 2201h).

3. Shaded cells in table denote read cycles. All other cycles are

write operations.

4. During unlock and command cycles, when lower address bits

are 555 or 2AAh as shown in table, address bits higher than

A11 (except where BA is required) and data bits higher than

DQ7 are don’t cares.

11. System may read and program in non-erasing sectors, or

enter autoselect mode, when in Program/Erase Suspend

mode. Program/Erase Suspend command is valid only

during a sector erase operation, and requires bank address.

5. No unlock or command cycles required when bank is reading

array data.

12. Program/Erase Resume command is valid only during Erase

Suspend mode, and requires bank address.

6. The Reset command is required to return to reading array

(or to erase-suspend-read mode if previously in Erase

Suspend) when bank is in autoselect mode, or if DQ5 goes

high (while bank is providing status information).

13. Command is valid when device is ready to read array data or

when device is in autoselect mode.

14. WP#/ACC must be at V during the entire operation of

ID

command.

7. Fourth cycle of autoselect command sequence is a read

cycle. System must provide bank address to obtain

manufacturer ID or device ID information. See Autoselect

Command Sequence section for more information.

15. Unlock Bypass Entry command is required prior to any

Unlock Bypass operation. Unlock Bypass Reset command is

required to return to the reading array.

8. The data is C0h for factory and customer locked and 80h for

factory locked.

Table 18. Sector Protection Command Definitions

Bus Cycles (Notes 1-4)

Command (Notes)

Addr Data Addr Data Addr Data

Addr

Data

Addr

Data

Addr

Data

Addr

Data

Reset

1

3

4

XXX

555

F0

AA

SecSi Sector Entry

SecSi Sector Exit

2AA

55

555

88

90

XX

00

68

SecSi Protection Bit

Program (Notes 5, 6)

6

5

4

7

555

AA

2AA

55

555

60

38

C8

28

OW

48

OW

RD(0)

SecSi Protection Bit

Status

OW

48

RD(0)

Password Program

(Notes 5, 7, 8)

XX[0-3]

PD[0-3]

Password Verify (Notes

6, 8, 9)

PWA[0-3] PWD[0-3]

Password Unlock (Notes

7, 10, 11)

PWA[0]

PWD[0] PWA[1] PWD[1] PWA[2] PWD[2] PWA[3] PWD[3]

PPB Program (Notes 5,

6, 12)

6

4

6

3

4

555

AA

2AA

55

555

60

90

60

78

58

(SA)WP

WP

68

RD(0)

60

(SA)WP

48

(SA)WP RD(0)

PPB Status

All PPB Erase (Notes 5,

6, 13, 14)

(SA)

40

(SA)WP RD(0)

PPB Lock Bit Set

PPB Lock Bit Status

(Note 15)

SA

RD(1)

DYB Write (Note 7)

DYB Erase (Note 7)

DYB Status (Note 6)

4

555

AA

2AA

55

555

48

58

SA

X1

X0

RD(0)

PPMLB Program (Notes

5, 6, 12)

6

5

6

5

555

AA

2AA

55

555

60

PL

SL

68

48

68

48

PL

SL

48

PL

SL

RD(0)

PPMLB Status (Note 5)

RD(0)

48

SPMLB Program (Notes

5, 6, 12)

SPMLB Status (Note 5)

RD(0)

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Legend:

RD(0) = Read Data DQ0 for protection indicator bit.

RD(1) = Read Data DQ1 for PPB Lock status.

SA = Sector Address where security command applies. Address

bits Amax:A12 uniquely select any sector.

SL = Persistent Protection Mode Lock Address (A7:A0) is

(00010010)

WP = PPB Address (A7:A0) is (00000010)

X = Don’t care

PPMLB = Password Protection Mode Locking Bit

SPMLB = Persistent Protection Mode Locking Bit

DYB = Dynamic Protection Bit

OW = Address (A7:A0) is (00011010)

PD[3:0] = Password Data (1 of 4 portions)

PPB = Persistent Protection Bit

PWA = Password Address. A1:A0 selects portion of password.

PWD = Password Data being verified.

PL = Password Protection Mode Lock Address (A7:A0) is

(00001010)

Notes:

1. See Table 1 for description of bus operations.

9. Command sequence returns FFh if PPMLB is set.

2. All values are in hexadecimal.

10. The password is written over four consecutive cycles, at

addresses 0-3.

3. Shaded cells in table denote read cycles. All other cycles are

write operations.

11. A 2 µs timeout is required between any two portions of

password.

4. During unlock and command cycles, when lower address bits

are 555 or 2AAh as shown in table, address bits higher than

A11 (except where BA is required) and data bits higher than

DQ7 are don’t cares.

12. A 100 µs timeout is required between cycles 4 and 5.

13. A 1.2 ms timeout is required between cycles 4 and 5.

14. Cycle 4 erases all PPBs. Cycles 5 and 6 validate bits have

been fully erased when DQ0 = 0. If DQ0 = 1 in cycle 6,

erase command must be issued and verified again. Before

issuing erase command, all PPBs should be programmed to

prevent PPB overerasure.

5. The reset command returns device to reading array.

6. Cycle 4 programs the addressed locking bit. Cycles 5 and 6

validate bit has been fully programmed when DQ0 = 1. If

DQ0 = 0 in cycle 6, program command must be issued and

verified again.

15. DQ1 = 1 if PPB locked, 0 if unlocked.

7. Data is latched on the rising edge of WE#.

8. Entire command sequence must be entered for each portion

of password.

Write Operation Status

The device provides several bits to determine the status of a program or erase opera-

tion: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 19 and the following subsections describe

the function of these bits. DQ7 and DQ6 each offer a method for determining whether

a program or erase operation is complete or in progress. The device also provides a

hardware-based output signal, RY/BY#, to determine whether an Embedded Program

or Erase operation is in progress or has been completed.

DQ7: Data# Polling

The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Pro-

gram or Erase algorithm is in progress or completed, or whether a bank is in Erase

Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the com-

mand sequence.

During the Embedded Program algorithm, the device outputs on DQ7 the complement

of the datum programmed to DQ7. This DQ7 status also applies to programming during

Erase Suspend. When the Embedded Program algorithm is complete, the device out-

puts the datum programmed to DQ7. The system must provide the program address

to read valid status information on DQ7. If a program address falls within a protected

sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns

to the read mode.

During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7.

When the Embedded Erase algorithm is complete, or if the bank enters the Erase

Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide

an address within any of the sectors selected for erasure to read valid status in-

formation on DQ7.

After an erase command sequence is written, if all sectors selected for erasing

are protected, Data# Polling on DQ7 is active for approximately 400 µs, then the

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bank returns to the read mode. If not all selected sectors are protected, the Em-

bedded Erase algorithm erases the unprotected sectors, and ignores the selected

sectors that are protected. However, if the system reads DQ7 at an address within

a protected sector, the status may not be valid.

When the system detects DQ7 has changed from the complement to true data,

it can read valid data at DQ15–DQ0 on the following read cycles. Just prior to the

completion of an Embedded Program or Erase operation, DQ7 may change asyn-

chronously with DQ15–DQ0 while Output Enable (OE#) is asserted low. That is,

the device may change from providing status information to valid data on DQ7.

Depending on when the system samples the DQ7 output, it may read the status

or valid data. Even if the device has completed the program or erase operation

and DQ7 has valid data, the data outputs on DQ15–DQ0 may be still invalid. Valid

data on DQ15–DQ0 will appear on successive read cycles.

Table 19 shows the outputs for Data# Polling on DQ7. 6 shows the Data# Polling

algorithm. 18 in the AC Characteristic section shows the Data# Polling timing

diagram.

START

Read DQ7–DQ0

Addr = VA

Yes

DQ7 = Data?

No

DQ5 = 1?

Yes

Read DQ7–DQ0

Addr = VA

Yes

DQ7 = Data?

No

PASS

FAIL

Notes:

1. VA = Valid address for programming. During a sector erase operation, a valid address is

any sector address within the sector being erased. During chip erase, a valid address is

any non-protected sector address.

2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously

with DQ5.

Figure 6. Data# Polling Algorithm

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RY/BY#: Ready/Busy#

The RY/BY# is a dedicated, open-drain output pin which indicates whether an

Embedded Algorithm is in progress or complete. The RY/BY# status is valid after

the rising edge of the final WE# pulse in the command sequence. Since RY/BY#

is an open-drain output, several RY/BY# pins can be tied together in parallel with

a pull-up resistor to V_CC

.

If the output is low (Busy), the device is actively erasing or programming. (This

includes programming in the Erase Suspend mode.) If the output is high (Ready),

the device is in the read mode, the standby mode, or one of the banks is in the

erase-suspend-read mode.

Table 19 shows the outputs for RY/BY#.

DQ6: Toggle Bit I

Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm

is in progress or complete, or whether the device has entered the Erase Suspend

mode. Toggle Bit I may be read at any address, and is valid after the rising edge

of the final WE# pulse in the command sequence (prior to the program or erase

operation), and during the sector erase time-out.

During an Embedded Program or Erase algorithm operation, successive read cy-

cles to any address cause DQ6 to toggle. The system may use either OE# or CE#

to control the read cycles. When the operation is complete, DQ6 stops toggling.

After an erase command sequence is written, if all sectors selected for erasing

are protected, DQ6 toggles for approximately 400 µs, then returns to reading

array data. If not all selected sectors are protected, the Embedded Erase algo-

rithm erases the unprotected sectors, and ignores the selected sectors that are

protected.

The system can use DQ6 and DQ2 together to determine whether a sector is ac-

tively erasing or is erase-suspended. When the device is actively erasing (that is,

the Embedded Erase algorithm is in progress), DQ6 toggles. When the device en-

ters the Erase Suspend mode, DQ6 stops toggling. However, the system must

also use DQ2 to determine which sectors are erasing or erase-suspended. Alter-

natively, the system can use DQ7 (see the DQ7: Data# Polling).

If a program address falls within a protected sector, DQ6 toggles for approxi-

mately 1 µs after the program command sequence is written, then returns to

reading array data.

DQ6 also toggles during the erase-suspend-program mode, and stops toggling

once the Embedded Program algorithm is complete.

Table 19 shows the outputs for Toggle Bit I on DQ6. Figure 7 shows the toggle bit

algorithm. Figure 19 in “Read Operation Timings” shows the toggle bit timing di-

agrams. Figure 20 shows the differences between DQ2 and DQ6 in graphical

form. See also the DQ2: Toggle Bit II.

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START

Read Byte

(DQ7–DQ0)

Address =VA

Read Byte

(DQ7–DQ0)

Address =VA

No

Toggle Bit

= Toggle?

Yes

No

DQ5 = 1?

Yes

Read Byte Twice

(DQ7–DQ0)

Address = VA

Toggle Bit

= Toggle?

No

Yes

Program/Erase

Operation Not

Complete, Write

Reset Command

Program/Erase

Operation Complete

Note: The system should recheck the toggle bit even if DQ5 = “1” because the toggle

bit may stop toggling as DQ5 changes to “1.” See the DQ6: Toggle Bit I and DQ2:

Toggle Bit II for more information.

Figure 7. Toggle Bit Algorithm

DQ2: Toggle Bit II

The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular

sector is actively erasing (that is, the Embedded Erase algorithm is in progress),

or whether that sector is erase-suspended. Toggle Bit II is valid after the rising

edge of the final WE# pulse in the command sequence.

DQ2 toggles when the system reads at addresses within those sectors that have

been selected for erasure. (The system may use either OE# or CE# to control the

read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or

is erase-suspended. DQ6, by comparison, indicates whether the device is actively

erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected

for erasure. Thus, both status bits are required for sector and mode information.

Refer to Table 19 to compare outputs for DQ2 and DQ6.

Figure 7 shows the toggle bit algorithm in flowchart form, and the DQ2: Toggle

Bit II explains the algorithm. See also the DQ6: Toggle Bit I. Figure 19 shows the

toggle bit timing diagram. Figure 20 shows the differences between DQ2 and DQ6

in graphical form.

Reading Toggle Bits DQ6/DQ2

Refer to Figure 7 for the following discussion. Whenever the system initially be-

gins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to

determine whether a toggle bit is toggling. Typically, the system would note and

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store the value of the toggle bit after the first read. After the second read, the

system would compare the new value of the toggle bit with the first. If the toggle

bit is not toggling, the device has completed the program or erase operation. The

system can read array data on DQ7–DQ0 on the following read cycle.

However, if after the initial two read cycles, the system determines that the toggle

bit is still toggling, the system also should note whether the value of DQ5 is high

(see the section on DQ5). If it is, the system should then determine again

whether the toggle bit is toggling, since the toggle bit may have stopped toggling

just as DQ5 went high. If the toggle bit is no longer toggling, the device has suc-

cessfully completed the program or erase operation. If it is still toggling, the

device did not completed the operation successfully, and the system must write

the reset command to return to reading array data.

The remaining scenario is that the system initially determines that the toggle bit

is toggling and DQ5 has not gone high. The system may continue to monitor the

toggle bit and DQ5 through successive read cycles, determining the status as de-

scribed in the previous paragraph. Alternatively, it may choose to perform other

system tasks. In this case, the system must start at the beginning of the algo-

rithm when it returns to determine the status of the operation (top of Figure 7).

DQ5: Exceeded Timing Limits

DQ5 indicates whether the program or erase time has exceeded a specified inter-

nal pulse count limit. Under these conditions DQ5 produces a “1,” indicating that the

program or erase cycle was not successfully completed.

The device may output a “1” on DQ5 if the system tries to program a “1” to a

location that was previously programmed to “0.” Only an erase operation can

change a “0” back to a “1.” Under this condition, the device halts the opera-

tion, and when the timing limit has been exceeded, DQ5 produces a “1.”

Under both these conditions, the system must write the reset command to return

to the read mode (or to the erase-suspend-read mode if a bank was previously

in the erase-suspend-program mode).

DQ3: Sector Erase Timer

After writing a sector erase command sequence, the system may read DQ3 to de-

termine whether or not erasure has begun. (The sector erase timer does not

apply to the chip erase command.) If additional sectors are selected for erasure,

the entire time-out also applies after each additional sector erase command.

When the time-out period is complete, DQ3 switches from a “0” to a “1.” See also

the Sector Erase Command Sequence.

After the sector erase command is written, the system should read the status of

DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted

the command sequence, and then read DQ3. If DQ3 is “1,” the Embedded Erase

algorithm has begun; all further commands (except Erase Suspend) are ignored

until the erase operation is complete. If DQ3 is “0,” the device will accept addi-

tional sector erase commands. To ensure the command has been accepted, the

system software should check the status of DQ3 prior to and following each sub-

sequent sector erase command. If DQ3 is high on the second status check, the

last command might not have been accepted.

Table 19 shows the status of DQ3 relative to the other status bits.

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Table 19. Write Operation Status

DQ7

DQ5

DQ2

Status

(Note 2)

DQ6

(Note 1)

DQ3

N/A

1

(Note 2)

RY/BY#

Embedded Program Algorithm

Embedded Erase Algorithm

Erase

DQ7#

0

Toggle

0

No toggle

Toggle

0

Standard

Mode

1

No toggle

0

N/A

Toggle

1

Suspended Sector

Erase-Suspend-

Read

Erase

Suspend

Mode

Non-Erase

Suspended Sector

Data

0

Data

N/A

Data

N/A

1

0

Erase-Suspend-Program

DQ7#

Toggle

Notes:

1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing

limits. Refer to the section on DQ5 for more information.

2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for

further details.

3. When reading write operation status bits, the system must always provide the bank address where the Embedded

Algorithm is in progress. The device outputs array data if the system addresses a non-busy bank.

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Absolute Maximum Ratings

Storage Temperature Plastic Packages . . . . . . . . . . . . . . . . –65°C to +150°C

Ambient Temperature with Power Applied . . . . . . . . . . . . . . –65°C to +125°C

Voltage with Respect to Ground

V_CC(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V

A9, OE#, and RESET# (Note 2) . . . . . . . . . . . . . . . . . . . . .–0.5 V to +13.0 V

WP#/ACC (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +10.5 V

All other pins (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to V_CC+0.5 V

Output Short Circuit Current (Note 3). . . . . . . . . . . . . . . . . . . . . . . . 200 mA

Notes:

1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions,

input or I/O pins may overshoot V_SSto –2.0 V for periods of up to 20 ns. Maximum

DC voltage on input or I/O pins is V_CC+0.5 V. During voltage transitions, input or

I/O pins may overshoot to V_CC+2.0 V for periods up to 20 ns. See Figure 8.

2. Minimum DC input voltage on pins A9, OE#, RESET#, and WP#/ACC is –0.5 V.

During voltage transitions, A9, OE#, WP#/ACC, and RESET# may overshoot V_SS

to –2.0 V for periods of up to 20 ns. See Figure 8. Maximum DC input voltage on

pin A9, OE#, and RESET# is +12.5 V which may overshoot to +14.0 V for periods

up to 20 ns. Maximum DC input voltage on WP#/ACC is +9.5 V which may

overshoot to +12.0 V for periods up to 20 ns.

3. No more than one output may be shorted to ground at a time. Duration of the

short circuit should not be greater than one second.

4. Stresses above those listed under “Absolute Maximum Ratings” may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the

device at these or any other conditions above those indicated in the operational

sections of this data sheet is not implied. Exposure of the device to absolute max-

imum rating conditions for extended periods may affect device reliability.

20 ns

V_CC

+2.0 V

+0.8 V

V_CC

–0.5 V

–2.0 V

+0.5 V

2.0 V

20 ns

Maximum Negative Overshoot Waveform

Maximum Positive Overshoot Waveform

Figure 8. Maximum Overshoot Waveforms

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Operating Ranges

Operating ranges define those limits between which the functionality of the de-

vice is guaranteed.

Industrial (I) Devices

Ambient Temperature (T_A) . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C

Extended (E) Devices

Ambient Temperature (T_A) . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C

Supply Voltages

V_CC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.7–3.6 V

V_IO(see Note). .1.65–1.95 V (for PL127J) or 2.7–3.6 V (for all PLxxxJ devices)

Notes:

For all AC and DC specifications, V_IO= V_CC; contact your local sales office for other

V_IOoptions.

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DC Characteristics

Table 20. CMOS Compatible

Parameter

Symbol

Parameter Description

Test Conditions

Min

Typ

Max

Unit

V_IN= V_SSto V_CC

V_CC= V_{CC max}

,

I_LI

Input Load Current

1.0

µA

I_LIT

I_LR

A9, OE#, RESET# Input Load Current

Reset Leakage Current

V_CC= V_{CC max}; V_ID= 12.5 V

35

µA

V_OUT= V_SSto V_CC, OE# = V_IH

V_CC= V_{CC max}

I_LO

Output Leakage Current

1.0

µA

5 MHz

20

45

15

30

55

25

OE# = V_IH, V_CC= V_{CC max}

(Note 1)

I_CC1

V_CCActive Read Current (Notes 1, 2)

mA

10 MHz

I_CC2

I_CC3

I_CC4

I_CC5

V_CCActive Write Current (Notes 2, 3)

V_CCStandby Current (Note 2)

V_CCReset Current (Note 2)

OE# = V_IH, WE# = V_IL

mA

µA

CE#, RESET#, WP#/ACC

= V_IO0.3 V

0.2

5

RESET# = V_SS0.3 V

V_IH= V_IO0.3 V;

V_IL= V_SS0.3 V

Automatic Sleep Mode (Notes 2, 4)

5 MHz

10 MHz

5 MHz

21

46

21

46

45

70

45

70

V_CCActive Read-While-Program Current

(Notes 1, 2)

I_CC6

OE# = V_IH

,

mA

V_CCActive Read-While-Erase Current

(Notes 1, 2)

I_CC7

OE# = V_IH

mA

10 MHz

V_CCActive Program-While-Erase-

Suspended Current (Notes 2, 5)

I_CC8

I_CC9

17

10

25

V_CCActive Page Read Current (Note 2)

OE# = V_IH, 8 word Page Read

V_IO= 1.65–1.95 V (PL127J)

V_IO= 2.7–3.6 V

15

0.4

mA

V

–0.4

–0.5

V_IL

Input Low Voltage

0.8

V

V_IO= 1.65–1.95 V (PL127J)

V_IO= 2.7–3.6 V

V_IO–0.4

2.0

V_IO+0.4

V_CC+0.3

9.5

V

V_IH

Input High Voltage

V

V_HH

V_ID

Voltage for ACC Program Acceleration

V_CC= 3.0 V ± 10%

8.5

V

Voltage for Autoselect and Temporary

Sector Unprotect

V_CC= 3.0 V 10%

11.5

12.5

0.1

V

I_OL= 100 µA, V_CC= V_{CC min}, V_IO= 1.65–

1.95 V (PL127J)

V_OL

Output Low Voltage

I_OL= 2.0 mA, V_CC= V_{CC min}, V_IO= 2.7–3.6

V

0.4

I_OH= –100 µA, V_CC= V_{CC min}, V_IO= 1.65–

1.95 V (PL127J)

V_IO–0.1

V_OH

Output High Voltage

I_OH= –2.0 mA, V_CC= V_{CC min}, V_IO= 2.7–3.6

V

2.4

2.3

V

V_LKO

Low V_CCLock-Out Voltage (Note 5)

2.5

Notes:

1. The I_CCcurrent listed is typically less than 5 mA/MHz, with OE# at V_IH.

2. Maximum I_CCspecifications are tested with V_CC= V_CCmax

3. I_CCactive while Embedded Erase or Embedded Program is in progress.

.

4. Automatic sleep mode enables the low power mode when addresses remain stable for t_ACC+ 30 ns. Typical sleep

mode current is 1 mA.

5. Not 100% tested.

6. Valid CE1#/CE2# conditions: (CE1# = V_IL,CE2# = V_IH,) or (CE1# = V_IH,CE2# = V_IL) or (CE1# = V_IH,CE2# = V_IH)

May 21, 2004 S29PL127_064_032J_00_A1

S29PL127J/S29PL064J/S29PL032J for MCP

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P r e l i m i n a r y

AC Characteristic

Test Conditions

3.6 V

2.7 kΩ

Device

Under

Test

Device

Under

Test

C

L

C

6.2 kΩ

L

V_IO= 3.0 V

Note: Diodes are IN3064 or equivalent

V_IO= 1.8 V (PL127J)

Figure 9. Te s t Se tu ps

Table 21. Test Specifications

Test Condition

All Speeds

1 TTL gate

30

Unit

Output Load

Output Load Capacitance, C_L(including jig capacitance)

pF

ns

V_IO= 1.8 V

(PL127J)

Input Rise and Fall Times

5

V_IO= 3.0 V

V_IO= 1.8 V

(PL127J)

0.0 - 1.8

Input Pulse Levels

V

V_IO= 3.0 V

0.0–3.0

V_IO/2

Input timing measurement reference levels

Output timing measurement reference levels

V

V_IO/2

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SWITCHING WAVEFORMS

Table 22. KEY TO SWITCHING WAVEFORMS

WAVEFORM

INPUTS

OUTPUTS

Steady

Changing from H to L

Changing from L to H

Don’t Care, Any Change Permitted

Does Not Apply

Changing, State Unknown

Center Line is High Impedance State (High Z)

VIO

VIO/2

In

Measurement Level

Output

0.0 V

Figure 10. Input Waveforms and Measurement Levels

VCC RampRate

All DC characteristics are specified for a V_CCramp rate > 1V/100 µs and V_CC

>=V_CCQ- 100 mV. If the V_CCramp rate is < 1V/100 µs, a hardware reset

required.+

May 21, 2004 S29PL127_064_032J_00_A1

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P r e l i m i n a r y

Read Operations

Table 23. Read-Only Operations

Parameter

Speed Options

JEDEC

t_AVAV

t_AVQV

t_ELQV

Std. Description

Te s t S e tup

55

20

60

25

65

70

Unit

ns

t_RC

Read Cycle Time (Note 1)

Min

t_ACCAddress to Output Delay

CE#, OE# = V_IL

OE# = V_IL

Max

ns

t_CE

t_PACCPage Access Time

t_OEOutput Enable to Output Delay

t_DF

Chip Enable to Output Delay

ns

30

ns

t_GLQV

t_EHQZ

ns

Chip Enable to Output High Z (Note 3)

16

ns

Output Enable to Output High Z (Notes 1,

3)

t_GHQZ

t_DF

Max

ns

Output Hold Time From Addresses, CE# or

OE#, Whichever Occurs First (Note 3)

t_AXQX

t_OH

Min

5

0

ns

Read

Output Enable Hold

Time (Note 1)

t_OEH

Toggle and

10

Data# Polling

Notes:

1. Not 100% tested.

2. See Figure 9 and Table 21 for test specifications

3. Measurements performed by placing a 50 ohm termination on the data pin with a bias of V_CC/2. The time from OE#

high to the data bus driven to V_CC/2 is taken as t_DF

.

4. For 70pF Output Load Capacitance, 2 ns will be added to the above t_ACC,t_CE,t_PACC,t_OEvalues for all speed grades

t_RC

Addresses Stable

t_ACC

Addresses

CE#

t_RH

t_DF

t_OE

OE#

t_OEH

WE#

Data

t_CE

t_OH

HIGH Z

Valid Data

RESET#

RY/BY#

0 V

Figure 11. Read Operation Timings

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P r e l i m i n a r y

Same Page

Amax

A2

-

A3

A0

Ad

Aa

Ab

Ac

t_PACC

t_ACC

Data

Qa

Qb

Qc

Qd

CE#

OE#

Figure 12. Page Read Operation Timings

Reset

Table 24. Hardware Reset (RESET#)

Parameter

JEDEC Std

Description

All Speed Options

Unit

RESET# Pin Low (During Embedded Algorithms)

to Read Mode (See Note)

t_Ready

Max

35

µs

RESET# Pin Low (NOT During Embedded

Algorithms) to Read Mode (See Note)

t_Ready

500

ns

t_RP

t_RH

t_RPD

t_RB

RESET# Pulse Width

Min

500

50

20

0

ns

µs

ns

Reset High Time Before Read (See Note)

RESET# Low to Standby Mode

RY/BY# Recovery Time

Note: Not 100% tested.

May 21, 2004 S29PL127_064_032J_00_A1

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P r e l i m i n a r y

RY/BY#

CE#, OE#

RESET#

t_RH

t_RP

t_Ready

Reset Timings NOT during Embedded Algorithms

Reset Timings during Embedded Algorithms

t_Ready

RY/BY#

t_RB

CE#, OE#

RESET#

t_RP

Figure 13. Reset Timings

86

S29PL127J/S29PL064J/S29PL032J for MCP

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P r e l i m i n a r y

Erase/Program Operations

Table 25. Erase and Program Operations

Parameter

Speed Options

JEDEC

t_AVAV

t_AVWL

Std

t_WC

t_AS

Description

55

60

65

70

Unit

ns

Write Cycle Time (Note 1)

Address Setup Time

Min

55

60

65

70

0

ns

Address Setup Time to OE# low during toggle bit

polling

t_ASO

t_AH

Min

15

ns

t_WLAX

Address Hold Time

30

25

35

30

Address Hold Time From CE# or OE# high during

toggle bit polling

t_AHT

0

t_DVWH

t_WHDX

t_DS

t_DH

Data Setup Time

Min

ns

Data Hold Time

0

t_OEPH

Output Enable High during toggle bit polling

10

Read Recovery Time Before Write

(OE# High to WE# Low)

t_GHWL

Min

0

ns

t_ELWL

t_WHEH

t_WLWH

t_WHDL

t_CS

t_CH

CE# Setup Time

Min

Typ

Min

Max

0

ns

µs

sec

µs

ns

CE# Hold Time

t_WP

Write Pulse Width

35

20

40

25

t_WPH

t_SR/W

Write Pulse Width High

Latency Between Read and Write Operations

0

6

t_WHWH1

t_WHWH2

t_WHWH1Programming Operation (Note 2)

t_WHWH1Accelerated Programming Operation (Note 2)

t_WHWH2Sector Erase Operation (Note 2)

4

0.5

50

0

t_VCS

t_RB

V_CCSetup Time (Note 1)

Write Recovery Time from RY/BY#

Program/Erase Valid to RY/BY# Delay

t_BUSY

90

Notes:

1. Not 100% tested.

2. See the “Erase And Programming Performance” section for more information.

May 21, 2004 S29PL127_064_032J_00_A1

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P r e l i m i n a r y

Timing Diagrams

Program Command Sequence (last two cycles)

Read Status Data (last two cycles)

t_AS

PA

t_WC

Addresses

555h

PA

t_AH

CE#

OE#

t_CH

t_WHWH1

t_WP

WE#

Data

t_WPH

t_CS

t_DS

t_DH

PD

D_OUT

A0h

Status

t_BUSY

t_RB

RY/BY#

V_CC

t_VCS

Notes:

1. PA = program address, PD = program data, D_OUTis the true data at the program address

Figure 14. Program Operation Timings

V_HH

V_ILor V_IH

WP#/ACC

V_ILor V_IH

t_VHH

Figure 15. Accelerated Program Timing Diagram

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S29PL127J/S29PL064J/S29PL032J for MCP

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Erase Command Sequence (last two cycles)

Read Status Data

VA

t_AS

SA

t_WC

VA

Addresses

CE#

2AAh

555h for chip erase

t_AH

t_CH

OE#

t_WP

WE#

t_WPH

t_WHWH2

t_CS

t_DS

t_DH

Data

Status

D

OUT

55h

30h

10 for Chip Erase

t_BUSY

t_RB

RY/BY#

V_CC

t_VCS

Notes:

1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”

Figure 16. Chip/Sector Erase Operation Timings

t_WC

t_RC

t_WC

Valid PA

t_AH

Valid RA

Valid PA

Addresses

t_AS

t_CPH

t_AS

t_AH

t_ACC

t_CE

CE#

OE#

t_CP

t_OE

t_OEH

t_GHWL

t_WP

WE#

Data

t_DF

t_WPH

t_DS

t_OH

t_DH

Valid

Out

Valid

In

Valid

In

Valid

In

t_SR/W

WE# Controlled Write Cycle

Read Cycle

CE# Controlled Write Cycles

Figure 17. Back-to-back Read/Write Cycle Timings

May 21, 2004 S29PL127_064_032J_00_A1

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P r e l i m i n a r y

t_RC

VA

Addresses

CE#

VA

t_ACC

t_CE

t_CH

t_OE

OE#

WE#

t_OEH

t_DF

t_OH

High Z

DQ7

Valid Data

Complement

Status Data

True

DQ6–DQ0

Status Data

True

Valid Data

t_BUSY

RY/BY#

Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and

array data read cycle

Figure 18. Data# Polling Timings (During Embedded Algorithms)

t_AHT

t_AS

Addresses

CE#

t_AHT

t_ASO

t_CEPH

t_OEH

WE#

OE#

t_OEPH

t_DH

Valid Data

t_OE

Valid

Status

Valid

Status

Valid

Status

DQ6/DQ2

Valid Data

(first read)

(second read)

(stops toggling)

RY/BY#

Notes:

1. VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last

status read cycle, and array data read cycle

Figure 19. Toggle Bit Timings (During Embedded Algorithms)

90

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S29PL127_064_032J_00_A1 May 21, 2004

P r e l i m i n a r y

Enter

Embedded

Erasing

Erase

Suspend

Enter Erase

Suspend Program

Erase

Resume

Erase

Erase Suspend

Read

Erase

Suspend

Program

Erase

Complete

WE#

Erase

Erase Suspend

Read

DQ6

DQ2

Note:Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE#

or CE# to toggle DQ2 and DQ6.

Figure 20. DQ2 vs. DQ6

Protect/Unprotect

Table 26. Temporary Sector Unprotect

Parameter

JEDEC

Std

t_VIDR

t_VHH

Description

All Speed Options

Unit

ns

V_IDRise and Fall Time (See Note)

V_HHRise and Fall Time (See Note)

Min

500

250

ns

RESET# Setup Time for Temporary Sector

Unprotect

t_RSP

Min

4

µs

RESET# Hold Time from RY/BY# High for

Temporary Sector Unprotect

t_RRB

Note: Not 100% tested.

V_ID

RESET#

V_ILor V_IH

t_VIDR

Program or Erase Command Sequence

CE#

WE#

t_RRB

t_RSP

RY/BY#

Figure 21. Temporary Sector Unprotect Timing Diagram

May 21, 2004 S29PL127_064_032J_00_A1

S29PL127J/S29PL064J/S29PL032J for MCP

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P r e l i m i n a r y

V

ID

IH

RESET#

SA, A6,

A1, A0

Valid*

Status

Sector Group Protect/Unprotect

Verify

40h

Data

60h

1 µs

Sector Group Protect: 150 µs

Sector Group Unprotect: 15 ms

CE#

WE#

OE#

Notes:

1. For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.

Figure 22. Sector/Sector Block Protect and Unprotect Timing Diagram

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S29PL127J/S29PL064J/S29PL032J for MCP

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Controlled Erase Operations

Table 27. Alternate CE# Controlled Erase and Program Operations

Parameter

JEDEC

Speed Options

Std

t_WC

t_AS

t_AH

t_DS

t_DH

Description

55

60

65

70

Unit

ns

t_AVAV

t_AVWL

t_ELAX

t_DVEH

t_EHDX

Write Cycle Time (Note 1)

Address Setup Time

Address Hold Time

Data Setup Time

Data Hold Time

Min

55

60

65

70

0

ns

30

25

35

30

ns

0

ns

Read Recovery Time Before Write

(OE# High to WE# Low)

t_GHEL

Min

ns

t_WLEL

t_EHWH

t_ELEH

t_WS

t_WH

WE# Setup Time

Min

Typ

0

ns

µs

sec

WE# Hold Time

t_CP

CE# Pulse Width

35

20

40

25

t_EHEL

t_CPH

CE# Pulse Width High

t_WHWH1

t_WHWH2

t_WHWH1

t_WHWH2

Programming Operation (Note 2)

Accelerated Programming Operation (Note 2)

Sector Erase Operation (Note 2)

6

4

0.5

Notes:

1. Not 100% tested.

2. See the “Erase And Programming Performance” section for more information.

May 21, 2004 S29PL127_064_032J_00_A1

S29PL127J/S29PL064J/S29PL032J for MCP

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P r e l i m i n a r y

555 for program

2AA for erase

PA for program

SA for sector erase

555 for chip erase

Data# Polling

Addresses

PA

t_WC

t_WH

t_AS

t_AH

WE#

OE#

t_GHEL

t_{WHWH1 or 2}

t_CP

CE#

Data

t_WS

t_CPH

t_DS

t_BUSY

t_DH

DQ7#

D_OUT

t_RH

A0 for program

55 for erase

PD for program

30 for sector erase

10 for chip erase

RESET#

RY/BY#

Notes:

1. Figure indicates last two bus cycles of a program or erase operation.

2. PA = program address, SA = sector address, PD = program data.

3. DQ7# is the complement of the data written to the device. D_OUTis the data written to the device

Table 28. Alternate CE# Controlled Write (Erase/Program) Operation Timings

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Table 29. Erase And Programming Performance

Parameter

Typ (Note 1)

Max (Note 2)

Unit

sec

Comments

0.5

135

71

2

Sector Erase Time

PL127J

PL064J

PL032J

216

Excludes 00h programming

prior to erasure (Note 4)

Chip Erase Time

113.6

62.4

39

Excludes system level

overhead (Note 5)

Word Program Time

6

100

µs

Accelerated Word Program Time

PL127J

4

60

µs

50.4

25.2

12.6

200

50.4

25.2

sec

Chip Program Time

PL064J

PL032J

(Note 3)

Notes:

1. Typical program and erase times assume the following conditions: 25×C, 3.0 V V_CC, 100,000 cycles. Additionally,

programming typicals assume checkerboard pattern. All values are subject to change.

2. Under worst case conditions of 90×C, V_CC= 2.7 V, 100,000 cycles. All values are subject to change.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most

bytes program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program

command. See Table 17 for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 100,000 cycles.

BGA Pin Capacitance

Parameter Symbol

Parameter Description

Input Capacitance

Te s t Se t up

V_IN= 0

Typ

6.3

7.0

5.5

11

Max

7

Unit

pF

C_IN

C_OUT

C_IN2

C_IN3

Output Capacitance

V_OUT= 0

V_IN= 0

8

pF

Control Pin Capacitance

WP#/ACC Pin Capacitance

8

pF

V_IN= 0

12

pF

Notes:

1. Sampled, not 100% tested.

2. Test conditions T_A= 25°C, f = 1.0 MHz.

May 21, 2004 S29PL127_064_032J_00_A1

S29PL127J/S29PL064J/S29PL032J for MCP

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P r e l i m i n a r y

pSRAM Type 1

4Mbit (256K Word x 16-bit)

8Mbit (512K Word x 16-bit)

16Mbit (1M Word x 16-bit)

32Mbit (2M Word x 16-bit)

64Mbit (4M Word x 16-bit)

Features

Fast Cycle Times

— T_ACC< 70 nS

— T_ACC< 65 nS

— T_ACC< 60 nS

— T_ACC< 55 nS

Very low standby current

— I_SB< 120 µA (64M and 32M)

— I_SB< 100 µA (16M)

Very low operating current

— Icc < 25mA

Functional Description

Mode

CE#

CE2/ZZ#

OE#

L

WE# UB#

LB#

L

Addresses

I/O 1-8

Dout

I/O 9-16

Dout

Power

I_ACTIVE

Read (word)

L

H

L

H

L

H

L

X

Read (lower byte)

Read (upper byte)

Write (word)

L

Dout

High-Z

Dout

I_ACTIVE

L

H

L

High-Z

Din

I_ACTIVE

X

L

Din

I_ACTIVE

Write (lower byte)

Write (upper byte)

Outputs disabled

Standby

X

L

H

L

Din

Invalid

Din

I_ACTIVE

X

L

H

X

Invalid

High-Z

I_ACTIVE

H

X

H

X

High-Z

I_ACTIVE

X

I_STANDBY

I_{DEEP SLEEP}

Deep power down

X

Absolute Maximum Ratings

Item

Voltage on any pin relative to V_SS

Voltage on V_CCrelative to V_SS

Power dissipation

Symbol

Vin, Vout

V_CC

Ratings

Units

V

-0.2 to V_CC+0.3

-0.2 to 3.6

1

V

P_D

W

Storage temperature

T_STG

-55 to 150

-25 to 85

°C

Operating temperature

T_A

June 8, 2004 pSRAM_Type01_12_A0

pSRAM Type 1

96

P r e l i m i n a r y

DC Characteristics (4Mb pSRAM Asynchronous)

Asynchronous

Performance Grade

Density

-70

4Mb pSRAM

Max

Symbol

V_CC

Parameter

Conditions

Min

2.7

Units

Power Supply

3.3

V

V_IH

Input High Level

Input Low Level

1.4 Vccq

-0.3

V_CC+ 0.3

0.4

V_IL

Input Leakage

Current

I_IL

Vin = 0 to V_CC

0.5

µA

Output Leakage

Current

OE = V_IHor

Chip Disabled

I_LO

I_OH= -1.0 mA

I_OH= -0.2 mA

I_OH= -0.5 mA

Output High

Voltage

V_OH

0.8 Vccq

V

I

_OL= 2.0 mA

_OL= 0.2 mA

_OL= 0.5 mA

Output Low

Voltage

V_OL

0.2

Operating

Current

I_ACTIVE

V_CC= 3.3 V

_CC= 3.0 V

V_CC= 3.3 V

25

70

mA

µA

V

I_STANDBYStandby Current

I_DEEP

SLEEP

Deep Power

x

µA

Down Current

1/4 Array PAR

Current

I_{PAR 1/4}

1/2 Array PAR

Current

I_{PAR 1/2}

97

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DC Characteristics (8Mb pSRAM Asynchronous)

Asynchronous

Version

Performance Grade

Density

B

C

-70

-55

8Mb pSRAM

Max

-70

8Mb pSRAM

Max

8Mb pSRAM

Max

Symbol

V_CC

Parameter

Conditions

Min

2.7

Units

Min

2.7

Units

Min

2.7

Units

Power Supply

3.3

V

3.6

V

3.3

V

V_IH

Input High Level

Input Low Level

2.2

V_CC+ 0.3

0.6

2.2

V_CC+ 0.3

0.6

1.4

V_CC+0.3

0.4

V_IL

-0.3

Input Leakage

Current

I_IL

Vin = 0 to V_CC

0.5

µA

0.5

µA

0.5

µA

Output Leakage

Current

OE = V_IHor

Chip Disabled

I_LO

I_OH= -1.0 mA V_CC-0.4

_OH= -0.2 mA

V_CC-0.4

V_OH

Output High Voltage

Output Low Voltage

I

V

0.8 V_CCQ

V

I_OH= -0.5 mA

I_OL= 2.0 mA

0.4

V_OL

I

_OL= 0.2 mA

0.2

I_OL= 0.5 mA

V_CC= 3.3 V

I_ACTIVEOperating Current

I_STANDBYStandby Current

25

60

mA

µA

23

60

mA

µA

25

60

mA

µA

V

_CC= 3.0 V

V_CC= 3.3 V

I_DEEP

SLEEP

Deep Power Down

Current

x

µA

x

µA

x

µA

1/4 Array PAR

Current

I_{PAR 1/4}

1/2 Array PAR

Current

I_{PAR 1/2}

June 8, 2004 pSRAM_Type01_12_A0

pSRAM Type 1

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P r e l i m i n a r y

DC Characteristics (16Mb pSRAM Asynchronous)

Asynchronous

Performance Grade

Density

-55

16Mb pSRAM

-70

16Mb pSRAM

Symbol

V_CC

V_IH

Parameter

Power Supply

Conditions

Minimum Maximum

Units

V

Minimum Maximum Units

2.7

2.2

3.6

V_CC+ 0.3

0.6

2.7

2.2

3.6

V_CC+ 0.3

0.6

V

Input High Level

V

V_IL

Input Low Level

-0.3

V

-0.3

V

I_IL

Input Leakage Current

Output Leakage Current

Vin = 0 to V_CC

OE = V_IHor Chip Disabled

I_OH= -1.0 mA

0.5

µA

0.5

µA

I_LO

0.5

V_CC-0.4

V_OH

Output High Voltage

Output Low Voltage

I

_OH= -0.2 mA

_OH= -0.5 mA

V

I_OL= 2.0 mA

I_OL= 0.2 mA

I_OL= 0.5 mA

V_CC= 3.3 V

0.4

V_OL

I_ACTIVE

Operating Current

Standby Current

25

mA

µA

23

mA

µA

V

_CC= 3.0 V

100

I_STANDBY

V_CC= 3.3 V

I_{DEEP SLEEP}Deep Power Down Current

x

µA

x

µA

I_{PAR 1/4}

I_{PAR 1/2}

1/4 Array PAR Current

1/2 Array PAR Current

99

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pSRAM_Type01_12_A0 June 8, 2004

P r e l i m i n a r y

DC Characteristics (16Mb pSRAM Page Mode)

Page Mode

-65

Performance Grade

Density

-60

16Mb pSRAM

Max

-70

16Mb pSRAM

Max

16Mb pSRAM

Max

Symbol

Parameter

Conditions

Min

Units

Min

Units

Min

Units

V_CC

Power Supply

2.7

3.3

V

2.7

3.3

V

2.7

3.3

V

Input High

Level

V_IH

V_IL

I_IL

0.8 Vccq V_CC+ 0.2

V

0.8 Vccq V_CC+ 0.2

V

0.8 Vccq

-0.2

V_CC+ 0.2

0.2 Vccq

1

V

Input Low

Level

-0.2

0.2 Vccq

1

-0.2

0.2 Vccq

1

Input Leakage

Current

Vin = 0 to V_CC

µA

Output

Leakage

Current

OE = V_IHor

I_LO

1

µA

V

1

µA

V

1

µA

V

Chip Disabled

I_OH= -1.0 mA

Output High

Voltage

V_OH

I

_OH= -0.2 mA

_OH= -0.5 mA 0.8 Vccq

0.8 Vccq

I_OL= 2.0 mA

Output Low

Voltage

V_OL

I

_OL= 0.2 mA

_OL= 0.5 mA

V

0.2 Vccq

25

0.2 Vccq

25

0.2 Vccq

25

Operating

Current

I_ACTIVE

V_CC= 3.3 V

mA

µA

mA

µA

mA

µA

V_CC= 3.0 V

V_CC= 3.3 V

Standby

Current

I_STANDBY

100

10

100

10

100

10

I_DEEP

SLEEP

Deep Power

Down Current

µA

1/4 Array PAR

Current

I_{PAR 1/4}

65

80

65

80

65

80

1/2 Array PAR

Current

I_{PAR 1/2}

June 8, 2004 pSRAM_Type01_12_A0

pSRAM Type 1

100

P r e l i m i n a r y

DC Characteristics (32Mb pSRAM Page Mode)

Page Mode

Version

Performance Grade

Density

C

-65

E

-60

32Mb pSRAM

-65

32Mb pSRAM

Min Max Units

-70

32Mb pSRAM

Min Max Units

Symbol Parameter

Conditions

Min

Max

Units

Min

Max

Units

Power

V_CC

V_IH

V_IL

I_IL

2.7

1.4

3.6

V

2.7

0.8 Vccq

-0.2

3.3

V

2.7

0.8 Vccq

-0.2

3.3

V

2.7

3.3

V

Supply

V_CC

+

0.2

Input High

Level

V_CC

+

V_CC

+ 0.2

V_CC

+ 0.2

0.8

Vccq

0.2

Input Low

Level

0.2

Vccq

0.2

Vccq

0.2

Vccq

-0.2

0.4

0.5

V

-0.2

V

Input

Leakage

Current

Vin = 0 to V_CC

µA

1

µA

1

µA

1

µA

Output

Leakage

Current

OE = V_IHor

Chip Disabled

I_LO

0.5

µA

V

µA

V

µA

V

µA

V

I_OH= -1.0 mA

0.8

Vccq

Output High I_OH= -0.2 mA

Voltage

V_OH

0.8

Vccq

I_OH= -0.5 mA

I_OL= 2.0 mA

0.8 Vccq

Output Low

Voltage

I_OL= 0.2 mA

I_OL= 0.5 mA

0.2

25

V_OL

V

0.2

Vccq

Operating

Current

I_ACTIVE

V_CC= 3.3 V

mA

µA

25

mA

µA

25

mA

µA

25

mA

µA

V_CC= 3.0 V

V_CC= 3.3 V

Standby

Current

I_STANDBY

100

10

120

10

120

10

100

10

Deep Power

Down

Current

I_DEEP

SLEEP

µA

1/4 Array

I_{PAR 1/4}

65

80

µA

75

90

µA

75

90

µA

65

80

µA

PAR Current

1/2 Array

PAR Current

I_{PAR 1/2}

101

pSRAM Type 1

pSRAM_Type01_12_A0 June 8, 2004

P r e l i m i n a r y

DC Characteristics (64Mb pSRAM Page Mode)

Page Mode

-70

Performance Grade

Density

64Mb pSRAM

Max

Symbol

V_CC

Parameter

Power Supply

Conditions

Min

2.7

Units

3.3

V

V_IH

Input High Level

Input Low Level

0.8 Vccq

-0.2

V_CC+ 0.2

0.2 Vccq

V_IL

Input Leakage

Current

I_IL

Vin = 0 to V_CC

1

µA

Output Leakage

Current

OE = V_IHor

Chip Disabled

I_LO

I_OH= -1.0 mA

I_OH= -0.2 mA

I_OH= -0.5 mA

Output High

Voltage

V_OH

V

0.8 Vccq

I

_OL= 2.0 mA

_OL= 0.2 mA

_OL= 0.5 mA

Output Low

Voltage

V_OL

0.2 Vccq

25

Operating

Current

I_ACTIVE

V_CC= 3.3 V

_CC= 3.0 V

V_CC= 3.3 V

mA

µA

V

I_STANDBYStandby Current

120

10

I_DEEP

SLEEP

Deep Power

Down Current

µA

1/4 Array PAR

Current

I_{PAR 1/4}

65

80

1/2 Array PAR

Current

I_{PAR 1/2}

Timing Test Conditions

Item

Input Pulse Level

0.1 V_CCto 0.9 V_CC

5ns

Input Rise and Fall Time

Input and Output Timing Reference Levels

Operating Temperature

0.5 V_CC

-25°C to +85°C

June 8, 2004 pSRAM_Type01_12_A0

pSRAM Type 1

102

P r e l i m i n a r y

Output Load Circuit

V_CC

14.5K

I/O

14.5K

30 pF

Output Load

Figure 23. Output Load Circuit

Power Up Sequence

After applying power, maintain a stable power supply for a minimum of 200 µs

after CE# > V_IH.

103

pSRAM Type 1

pSRAM_Type01_12_A0 June 8, 2004

P r e l i m i n a r y

AC Characteristics (4Mb pSRAM Page Mode)

Asynchronous

-70

Performance Grade

Density

4Mb pSRAM

3 Volt

Symbol

Parameter

Min

Max

Units

trc

Read cycle time

70

ns

Address Access

Time

taa

tco

toe

tba

tlz

70

20

70

Chip select to

output

ns

Output enable to

valid output

UB#, LB# Access

time

Chip select to

Low-z output

10

5

UB#, LB# Enable

to Low-Z output

tblz

tolz

thz

Output enable to

Low-Z output

Chip enable to

High-Z output

0

20

UB#, LB#

disable to High-Z

output

tbhz

0

ns

Output disable to

High-Z output

tohz

toh

0

ns

Output hold from

Address Change

10

June 8, 2004 pSRAM_Type01_12_A0

pSRAM Type 1

104

P r e l i m i n a r y

Asynchronous

Performance Grade

Density

-70

4Mb pSRAM

Max

3 Volt

Symbol

Parameter

Min

Units

twc

tcw

Write cycle time

70

ns

Chipselect to end

of write

70

0

ns

Address set up

Time

tas

Address valid to

end of write

taw

70

UB#, LB# valid

to end of write

tbw

twp

twr

70

55

0

ns

Write pulse width

Write recovery

time

Write to output

High-Z

twhz

tdw

tdh

20

ns

Data to write

time overlap

25

0

Data hold from

write time

End write to

tow

5

output Low-Z

Write high pulse

width

7.5

ns

tpc

tpa

Page read cycle

x

Page address

access time

x

twpc

tcp

Page write cycle

x

Chip select high

pulse width

105

pSRAM Type 1

pSRAM_Type01_12_A0 June 8, 2004

P r e l i m i n a r y

AC Characteristics (8Mb pSRAM Asynchronous)

Asynchronous

Version

Performance Grade

Density

B

C

-70

-55

8Mb pSRAM

Max

-70

8Mb pSRAM

Max

3 Volt

Symbol

Parameter

Min

Units

Min

Max

Units

Min

Units

trc

Read cycle time

55

ns

70

ns

70

ns

Address Access

Time

taa

55

30

55

ns

70

35

70

20

70

ns

Chip select to

output

tco

toe

tba

tlz

ns

Output enable to

valid output

UB#, LB# Access

time

Chip select to

Low-z output

5

0

5

0

10

5

UB#, LB# Enable

to Low-Z output

tblz

tolz

thz

Output enable to

Low-Z output

Chip enable to

High-Z output

20

25

0

20

UB#, LB#

disable to High-Z

output

tbhz

0

ns

0

ns

0

ns

Output disable to

High-Z output

tohz

toh

0

ns

0

ns

0

ns

Output hold from

Address Change

10

June 8, 2004 pSRAM_Type01_12_A0

pSRAM Type 1

106

P r e l i m i n a r y

Asynchronous

Version

Performance Grade

Density

B

C

-70

-55

8Mb pSRAM

Max

-70

8Mb pSRAM

Max

8Mb pSRAM

Max

3 Volt

Symbol

Parameter

Min

Units

Min

Units

Min

Units

twc

tcw

Write cycle time

55

ns

70

ns

70

ns

Chip select to

end of write

45

0

ns

55

0

ns

70

0

ns

Address set up

Time

tas

Address valid to

end of write

taw

45

55

70

UB#, LB# valid

to end of write

tbw

twp

twr

45

0

ns

55

0

ns

70

55

0

ns

Write pulse width

Write recovery

time

Write to output

High-Z

twhz

tdw

tdh

25

ns

25

20

ns

Data to write

time overlap

40

0

40

0

ns

25

0

Data hold from

write time

End write to

tow

5

output Low-Z

Write high pulse

width

x

ns

x

ns

x

ns

tpc

tpa

Page read cycle

x

Page address

access time

twpc

tcp

Page write cycle

x

Chip select high

pulse width

107

pSRAM Type 1

pSRAM_Type01_12_A0 June 8, 2004

P r e l i m i n a r y

AC Characteristics (16Mb pSRAM Asynchronous)

Asynchronous

Performance Grade

Density

-55

-70

16Mb pSRAM

Max

16Mb pSRAM

3 Volt

Symbol

Parameter

Min

Max

Units

Min

Units

trc

Read cycle time

55

ns

70

ns

Address Access

Time

taa

55

30

55

70

35

70

ns

Chip select to

output

tco

toe

tba

tlz

ns

Output enable to

valid output

UB#, LB# Access

time

Chip select to

Low-z output

5

0

5

0

UB#, LB# Enable

to Low-Z output

tblz

tolz

thz

Output enable to

Low-Z output

Chip enable to

High-Z output

25

UB#, LB#

disable to High-Z

output

tbhz

0

ns

0

ns

Output disable to

High-Z output

tohz

toh

0

ns

0

ns

Output hold from

Address Change

10

June 8, 2004 pSRAM_Type01_12_A0

pSRAM Type 1

108

P r e l i m i n a r y

Asynchronous

Performance Grade

Density

-55

-70

16Mb pSRAM

3 Volt

Symbol

Parameter

Min

Max

Units

Min

Max

Units

twc

tcw

Write cycle time

55

ns

70

ns

Chipselect to end

of write

50

0

55

0

Address set up

Time

tas

ns

Address valid to

end of write

taw

50

55

UB#, LB# valid

to end of write

tbw

twp

twr

50

0

ns

55

0

ns

Write pulse width

Write recovery

time

Write to output

High-Z

twhz

tdw

tdh

25

ns

25

ns

Data to write

time overlap

25

0

25

0

Data hold from

write time

End write to

tow

5

output Low-Z

Write high pulse

width

x

ns

x

ns

tpc

tpa

Page read cycle

x

Page address

access time

twpc

tcp

Page write cycle

x

Chip select high

pulse width

109

pSRAM Type 1

pSRAM_Type01_12_A0 June 8, 2004

P r e l i m i n a r y

AC Characteristics (16Mb pSRAM Page Mode)

Page Mode

-65

Performance Grade

Density

-60

-70

16Mb pSRAM

3 Volt

Symbol

Parameter

Min

Max

Units

Min

Max

Units

Min

Max

Units

trc

Read cycle time

60

20k

ns

65

20k

ns

70

20k

ns

Address Access

Time

taa

60

25

60

65

25

65

70

25

70

Chip select to

output

tco

toe

tba

tlz

ns

Output enable to

valid output

UB#, LB# Access

time

Chip select to

Low-z output

10

5

10

5

10

5

UB#, LB# Enable

to Low-Z output

tblz

tolz

thz

Output enable to

Low-Z output

Chip enable to

High-Z output

0

5

0

5

0

5

UB#, LB#

disable to High-Z

output

tbhz

0

ns

0

ns

0

ns

Output disable to

High-Z output

tohz

toh

0

5

ns

0

5

ns

0

5

ns

Output hold from

Address Change

June 8, 2004 pSRAM_Type01_12_A0

pSRAM Type 1

110

P r e l i m i n a r y

Page Mode

-65

Performance Grade

Density

-60

16Mb pSRAM

-70

16Mb pSRAM

3 Volt

Symbol

Parameter

Min

Max

Units

Min

Max

Units

Min

Max

Units

twc

tcw

Write cycle time

60

20k

ns

65

20k

ns

70

20k

ns

Chipselect to end

of write

50

0

60

0

60

0

Address set up

Time

tas

ns

Address valid to

end of write

taw

50

60

UB#, LB# valid

to end of write

tbw

twp

twr

50

0

ns

60

50

0

ns

60

50

0

ns

Write pulse width

Write recovery

time

Write to output

High-Z

twhz

tdw

tdh

5

ns

5

ns

5

ns

Data to write

time overlap

20

0

20

0

20

0

Data hold from

write time

End write to

tow

5

output Low-Z

Write high pulse

width

7.5

ns

7.5

ns

7.5

ns

tpc

tpa

Page read cycle

25

20k

25

ns

25

20k

25

ns

25

20k

25

ns

Page address

access time

twpc

tcp

Page write cycle

25

10

20k

25

10

20k

25

10

20k

Chip select high

pulse width

111

pSRAM Type 1

pSRAM_Type01_12_A0 June 8, 2004

P r e l i m i n a r y

AC Characteristics (32Mb pSRAM Page Mode)

Page Mode

Version

Performance Grade

Density

C

-65

E

-60

-65

-70

32Mb pSRAM

Min Max Units

32Mb pSRAM

3 Volt

Symbol

Parameter

Min

Max Units

Min

Max Units

Min

Max Units

trc

Read cycle time

65

20k

65

ns

60

20k

60

ns

65

20k

65

ns

70

20k

70

ns

Address Access

Time

taa

Chip select to

output

tco

toe

tba

tlz

65

20

65

ns

60

25

60

ns

65

25

65

ns

70

25

70

ns

Output enable to

valid output

UB#, LB# Access

time

Chip select to

Low-z output

10

5

10

5

10

5

10

5

UB#, LB# Enable

to Low-Z output

tblz

tolz

thz

Output enable to

Low-Z output

Chip enable to

High-Z output

0

20

0

5

0

5

0

5

UB#, LB#

disable to High-Z

output

tbhz

0

ns

0

ns

0

ns

0

ns

Output disable to

High-Z output

tohz

toh

0

5

ns

0

5

ns

0

5

ns

0

5

ns

Output hold from

Address Change

June 8, 2004 pSRAM_Type01_12_A0

pSRAM Type 1

112

P r e l i m i n a r y

Page Mode

Version

Performance Grade

Density

C

-65

E

-60

32Mb pSRAM

Min Max Units

-65

-70

32Mb pSRAM

Min Max Units

32Mb pSRAM

3 Volt

Symbol

Parameter

Min

Max Units

Min

Max Units

twc

tcw

Write cycle time

65

55

20k

ns

60

50

20k

ns

65

60

20k

ns

70

60

20k

ns

Chipselect to end

of write

Address set up

Time

tas

0

ns

0

ns

0

ns

0

ns

Address valid to

end of write

taw

55

50

60

UB#, LB# valid

to end of write

tbw

twp

twr

55

0

ns

50

0

ns

60

50

0

ns

60

50

0

ns

Write pulse width

20k

5

Write recovery

time

Write to output

High-Z

twhz

tdw

tdh

ns

5

ns

5

ns

5

ns

Data to write

time overlap

25

0

20

0

20

0

20

0

Data hold from

write time

End write to

tow

5

output Low-Z

Write high pulse

width

7.5

ns

7.5

ns

7.5

ns

7.5

ns

tpc

tpa

Page read cycle

25

20k

25

ns

25

20k

25

ns

25

20k

25

ns

25

20k

25

ns

Page address

access time

twpc

tcp

Page write cycle

25

10

20k

25

10

20k

25

10

20k

25

10

20k

Chip select high

pulse width

113

pSRAM Type 1

pSRAM_Type01_12_A0 June 8, 2004

P r e l i m i n a r y

AC Characteristics (64Mb pSRAM Page Mode)

Page Mode

-70

Performance Grade

Density

Parameter

64Mb pSRAM

3 Volt

Symbol

Min

Max

Units

trc

Read cycle time

70

20k

ns

Address Access

Time

taa

tco

toe

tba

tlz

70

25

70

Chip select to

output

ns

Output enable to

valid output

UB#, LB# Access

time

Chip select to

Low-z output

10

5

UB#, LB# Enable

to Low-Z output

tblz

tolz

thz

Output enable to

Low-Z output

Chip enable to

High-Z output

0

5

UB#, LB#

disable to High-Z

output

tbhz

0

ns

Output disable to

High-Z output

tohz

toh

0

5

ns

Output hold from

Address Change

June 8, 2004 pSRAM_Type01_12_A0

pSRAM Type 1

114

P r e l i m i n a r y

Page Mode

Performance Grade

Density

Parameter

-70

64Mb pSRAM

3 Volt

Symbol

Min

Max

Units

twc

Write cycle time

70

20k

ns

Chipselect to end

of write

tcw

tas

60

0

Address set up

Time

ns

Address valid to

end of write

taw

60

UB#, LB# valid

to end of write

tbw

twp

twr

60

50

0

ns

Write pulse width

20k

5

Write recovery

time

Write to output

High-Z

twhz

tdw

tdh

ns

Data to write

time overlap

20

0

Data hold from

write time

End write to

tow

5

output Low-Z

Write high pulse

width

7.5

ns

tpc

tpa

Page read cycle

20

20k

20

ns

Page address

access time

twpc

tcp

Page write cycle

20

10

20k

Chip select high

pulse width

Timing Diagrams

Read Cycle

t_RC

Address

t_AA

t_OH

Previous Data Valid

Data Valid

Data Out

Figure 24. Timing of Read Cycle (CE# = OE# = V , WE# = ZZ# = V

)

IH

IL

115

pSRAM Type 1

pSRAM_Type01_12_A0 June 8, 2004

P r e l i m i n a r y

t_RC

Address

t_AA

CE#

t_CO

t_LZ

t_HZ

t_OE

OE#

t_OLZ

t_OHZ

t_{LB, UB}

t

LB#, UB#

Data Out

t_BHZ

Data Valid

t_BLZ

High-Z

Figure 25. Timing Waveform of Read Cycle (WE# = ZZ# = V

)

IH

June 8, 2004 pSRAM_Type01_12_A0

pSRAM Type 1

116

P r e l i m i n a r y

t_PGMAX

Page Address (A4 - A20)

t_RC

t_PC

Word Address (A0 - A3)

t_AA

t_PA

t_HZ

CE#

t_CO

t_OE

t_OHZ

OE#

t_OLZ

t_{LB, UB}

t_BHZ

t

LB#, UB#

t_BLZ,

High-Z

Data Out

Figure 26. Timing Waveform of Page Mode Read Cycle (WE# = ZZ# = V

)

IH

117

pSRAM Type 1

pSRAM_Type01_12_A0 June 8, 2004

P r e l i m i n a r y

Write Cycle

t_WC

Address

t_WR

t_AW

CE#

t_CW

t_BW

LB#, UB#

t_AS

t_WP

WE#

t_DW

t_DH

High-Z

Data Valid

Data In

Data Out

t_WHZ

t_OW

High-Z

Figure 27. Timing Waveform of Write Cycle (WE# Control, ZZ# = V

)

IH

t_WC

Address

CE#

t_AW

t_WR

t_CW

t_AS

t_BW

LB#, UB#

WE#

t_WP

t_DW

t_DH

Data Valid

Data In

t_WHZ

High-Z

Figure 28. Timing Waveform of Write Cycle (CE# Control, ZZ# = V

Data Out

)

IH

June 8, 2004 pSRAM_Type01_12_A0

pSRAM Type 1

118

P r e l i m i n a r y

t_PGMAX

Page Address

(A4 - A20)

t_WC

t_PWC

Wor d Address

(A0 - A3 )

t_AS

t_CW

CE#

t_WP

WE#

t_{LBW, UBW}

t

LB#, UB#

t_DW

t_DHt_PDWt_PDH

t_PDWt_PDH

High-Z

Data Out

Figure 29. Timing Waveform of Page Mode Write Cycle (ZZ# = V

)

IH

Power Savings Modes (For 16M Page Mode, 32M and 64M Only)

There are several power savings modes.

Partial Array Self Refresh

Temperature Compensated Refresh (64M)

Deep Sleep Mode

Reduced Memory Size (32M, 16M)

The operation of the power saving modes ins controlled by the settings of bits

contained in the Mode Register. This definition of the Mode Register is shown in

Figure 30 and the various bits are used to enable and disable the various low

power modes as well as enabling Page Mode operation. The Mode Register is set

by using the timings defined in Figure xxx.

Partial Array Self Refresh (PAR)

In this mode of operation, the internal refresh operation can be restricted to a

16Mb, 32Mb, or 48Mb portion of the array. The array partition to be refreshed is

determined by the respective bit settings in the Mode Register. The register set-

tings for the PASR operation are defined in Table xxx. In this PASR mode, when

ZZ# is active low, only the portion of the array that is set in the register is re-

119

pSRAM Type 1

pSRAM_Type01_12_A0 June 8, 2004

P r e l i m i n a r y

freshed. The data in the remainder of the array will be lost. The PASR operation

mode is only available during standby time (ZZ# low) and once ZZ# is returned

high, the device resumes full array refresh. All future PASR cycles will use the

contents of the Mode Register that has been previously set. To change the ad-

dress space of the PASR mode, the Mode Register must be reset using the

previously defined procedures. For PASR to be activated, the register bit, A4 must

be set to a one (1) value, “PASR Enabled”. If this is the case, PASR will be acti-

vated 10 µs after ZZ# is brought low. If the A4 register bit is set equal to zero

(0), PASR will not be activated.

Temperature Compensated Refresh (for 64Mb)

In this mode of operation, the internal refresh rate can be optimized for the op-

eration temperature used and this can then lower standby current. The DRAM

array in the PSRAM must be refreshed internally on a regular basis. At higher

temperatures, the DRAM cell must be refreshed more often than at lower tem-

peratures. By setting the temperature of operation in the Mode Register, this

refresh rate can be optimized to yield the lowest standby current at the given op-

erating temperature. There are four different temperature settings that can be

programmed in to the PSRAM. These are defined in Figure 30.

Deep Sleep Mode

In this mode of operation, the internal refresh is turned off and all data integrity

of the array is lost. Deep Sleep is entered by bringing ZZ# low with the A4 reg-

ister bit set to a zero (0), “Deep Sleep Enabled”. If this is the case, Deep Sleep

will be entered 10 µs after ZZ# is brought low. The device will remain in this mode

as long as ZZ# remains low. If the A4 register bit is set equal to one (1), Deep

Sleep will not be activated.

Reduced Memory Size (for 32M and 16M)

In this mode of operation, the 32Mb PSRAM can be operated as a 8Mb or 16Mb

device. The mode and array size are determined by the settings in the VA register.

The VA register is set according to the following timings and the bit settings in

the table “Address Patterns for RMS”. The RMS mode is enabled at the time of

ZZ transitioning high and the mode remains active until the register is updated.

To return to the full 32Mb address space, the VA register must be reset using the

previously defined procedures. While operating in the RMS mode, the unselected

portion of the array may not be used.

Other Mode Register Settings (for 64M)

The Page Mode operation can also be enabled and disabled using the Mode Reg-

ister. Register bit A7 controls the operation of Page Mode and setting this bit to a

one (1), enables Page Mode. If the register bit A7 is set to a zero (0), Page Mode

operation is disabled.

June 8, 2004 pSRAM_Type01_12_A0

pSRAM Type 1

120

P r e l i m i n a r y

64 Mb

32 Mb / 16 Mb

A21 - A8

A7

A6

A5

A4

A3

A2

A1

A0

Array Mode

for ZZ#

Reserved

Must set to all 0

Temp

Compensated

Refresh

0 = PAR (default)

1 = RMS

PAR Section

1

0

1

0

1

0

1 = Top 1/4 array

0 = Top 1/2 array

1 = Top 3/4 array

0 = No PAR

1 = Bottom 1/4 array

0 = Bottom 1/2 array

1 = Bottom 3/4 array

0 = Full array (default)

1

0

1

0 = 15^oC

1 = 45^oC

0 = 70^oC

1 = 85^oC (default)

Page Mode

0 = Page Mode Disabled (default)

1 = Page Mode Enabled

Deep Sleep Enable/Disable

0 = Deep Sleep Enabled

1 = Deep Sleep Disabled (default)

Figure 30. Mode Register

t

WC

Address

t

AW

t

AS

t

WR

CE#

t

WP

WE#

ZZ#

t

ZZWE

t

CDZZ

Figure 31. Mode Register UpdateTimings (UB#, LB#, OE# are Don’t Care)

121

pSRAM Type 1

pSRAM_Type01_12_A0 June 8, 2004

P r e l i m i n a r y

t

ZZMIN

ZZ#

CE#

t

R

CDZZ

Figure 32. Deep Sleep Mode - Entry/Exit Timings

June 8, 2004 pSRAM_Type01_12_A0

pSRAM Type 1

122

P r e l i m i n a r y

Mode Register Update and Deep Sleep Timings

Item

Chip deselect to ZZ# low

ZZ# low to WE# low

Symbol

t_CDZZ

t_ZZWE

t_WC

Min

5

Max

Unit

ns

µs

Note

10

500

Write register cycle time

Chip enable to end of write

Address valid to end of write

Write recovery time

70/85

0

1

t_CW

t_AW

t_WR

Address setup time

t_AS

0

Write pulse width

t_WR

40

Deep Sleep Pulse Width

Deep Sleep Recovery

t_ZZMIN

t_R

10

150

Notes:

1. Minimum cycle time for writing register is equal to speed grade of product.

Address Patterns for PASR (A4=1) (64M)

A2 A1 A0

Active Section

Top quarter of die

Top half of die

Reserved

Address Space

300000h-3FFFFFh

200000h-3FFFFFh

Size

Density

16Mb

32Mb

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1Mb x 16

2Mb x 16

No PASR

None

0

Bottom quarter of die

Bottom half of die

Reserved

000000h-0FFFFFh

000000h-1FFFFFh

1Mb x 16

2Mb x 16

16Mb

32Mb

Full array

000000h-3FFFFFh

4Mb x 16

64Mb

123

pSRAM Type 1

pSRAM_Type01_12_A0 June 8, 2004

P r e l i m i n a r y

Deep ICC Characteristics (for 64Mb)

Item

Symbol

Test

Array Partition Typ Max Unit

None

10

75

1/4 Array

1/2 Array

Full Array

PASR Mode Standby Current

I_PASR

V_IN= V_CCor 0V, Chip Disabled, t_A= 85°C

µA

90

120

Item

Symbol

Max Temperature

15°C

Typ

Max

50

Unit

45°C

60

Temperature Compensated Refresh Current

I_TCR

µA

70°C

80

85°C

120

Item

Symbol

Test

Typ

Max

10

Unit

Deep Sleep Current

I_ZZ

V_IN= V_CCor 0V, Chip in ZZ# mode, t_A= 25°C

µA

Address Patterns for PAR (A3= 0, A4=1) (32M)

A2 A1 A0

Active Section

One-quarter of die

Address Space

000000h - 07FFFFh

Size

Density

8Mb

0

x

1

0

1

0

1

0

512Kb x 16

1Mb x 16

2Mb x 16

512Kb x 16

1Mb x 16

One-half of die

Full die

000000h - 0FFFFFh

000000h - 1FFFFFh

180000h - 1FFFFFh

100000h - 1FFFFFh

16Mb

32Mb

8Mb

One-quarter of die

One-half of die

16Mb

Address Patterns for RMS (A3 = 1, A4 = 1) (32M)

A2 A1 A0

Active Section

One-quarter of die

Address Space

000000h - 07FFFFh

Size

Density

8Mb

0

1

0

1

0

512Kb x 16

1Mb x 16

512Kb x 16

1Mb x 16

One-half of die

One-quarter of die

One-half of die

000000h - 0FFFFFh

180000h - 1FFFFFh

100000h - 1FFFFFh

16Mb

8Mb

16Mb

June 8, 2004 pSRAM_Type01_12_A0

pSRAM Type 1

124

P r e l i m i n a r y

Low Power ICC Characteristics (32M)

Item

Symbol

Te s t

Array Partition

1/4 Array

Typ

Max

65

Unit

µA

V_IN= V_CCor 0V,

Chip Disabled, t_A= 85^oC

PAR Mode Standby Current I_PAR

RMS Mode Standby Current I_RMSSB

1/2 Array

80

µA

4Mb Device

8Mb Device

40

µA

V_IN= V_CCor 0V,

Chip Disabled, t_A= 85^oC

50

µA

V_IN= V_CCor 0V,

Chip in ZZ mode, t_A= 85^oC

Deep Sleep Current

I_ZZ

10

µA

Address Patterns for PAR (A3= 0, A4=1) (16M)

A2 A1 A0

Active Section

One-quarter of die

Address Space

00000h - 0FFFFh

Size

Density

4Mb

0

x

1

0

1

0

1

0

256Kb x 16

512Kb x 16

1Mb x 16

One-half of die

Full die

00000h - 7FFFFh

00000h - FFFFFh

C0000h - FFFFh

80000h - 1FFFFFh

8Mb

162Mb

4Mb

One-quarter of die

One-half of die

256Kb x 16

512Kb x 16

8Mb

Address Patterns for RMS (A3 = 1, A4 = 1) (16M)

A2 A1 A0

Active Section

One-quarter of die

Address Space

00000h - 0FFFFh

Size

Density

4Mb

0

1

0

1

0

256Kb x 16

512Kb x 16

256Kb x 16

512Kb x 16

One-half of die

One-quarter of die

One-half of die

00000h - 7FFFFh

C0000h - FFFFFh

80000h - FFFFFh

8Mb

4Mb

8Mb

Low Power ICC Characteristics (16M)

Item

Symbol

Te s t

Array Partition

1/4 Array

Typ

Max

Unit

65

80

40

50

V_IN= V_CCor 0V,

Chip Disabled, t_A= 85^oC

PAR Mode Standby Current

I_PAR

µA

1/2 Array

4Mb Device

8Mb Device

V_IN= V_CCor 0V,

Chip Disabled, t_A= 85^oC

RMS Mode Standby Current

Deep Sleep Current

I_RMSSB

µA

V_IN= V_CCor 0V,

Chip in ZZ# mode, t_A= 85^oC

I_ZZ

10

125

pSRAM Type 1

pSRAM_Type01_12_A0 June 8, 2004

P r e l i m i n a r y

Type 2 pSRAM

16Mb (1Mb Word x 16-bit)

32Mb (2Mb Word x 16-bit)

64Mb (4Mb Word x 16-bit)

Features

Process Technology: CMOS

Organization: x16 bit

Power Supply Voltage: 2.7~3.1V

Three State Outputs

Compatible with Low Power SRAM

Product Information

Standby

Operating

Density

16Mb

32Mb

64Mb

V

Range

(ISB1, Max.)

(ICC2, Max.)

Mode

Dual CS

CC

2.7-3.1V

80 µA

100 µA

TBD

30 mA

35 mA

40 mA

TBD

Dual CS and Page Mode

Dual CS

Dual CS and Page Mode

Dual CS

TBD

Dual CS and Page Mode

Pin Description

Pin Name

Description

I/O

CS1#, CS2

OE#

Chip Select

I

Output Enable

Write Enable

WE#

LB#, UB#

Lower/Upper Byte Enable

A0-A19 (16M)

A0-A20 (32M)

A0-A21 (64M)

Address Inputs

I

I/O0-I/O15

V_CC/V_CCQ

V_SS/V_SSQ

NC

Data Inputs/Outputs

Power Supply

Ground

I/O

—

Not Connection

Do Not Use

—

DNU

—

May 3, 2004 pSRAM_Type02_15A0

Type 2 pSRAM

126

P r e l i m i n a r y

Power Up Sequence

1. Apply power.

2. Maintain stable power(V_CCmin.=2.7V) for a minimum 200 µs with

CS1#=high or CS2=low.

127

Type 2 pSRAM

pSRAM_Type02_15A0 May 3, 2004

P r e l i m i n a r y

Timing Diagrams

Power Up

Min. 200 s

VCC(Min)

VCC

CS1#

CS2

Power Up Mode

Normal Operation

Figure 33. Power Up 1 (CS1# Controlled)

Notes:

1. After V_CCreaches V_CC(Min.), wait 200 µs with CS1# high. Then the device gets into the normal operation.

Min. 200 s

VCC(Min)

VCC

CS1#

CS2

Power Up Mode

Normal Operation

Figure 34. Power Up 2 (CS2 Controlled)

Notes:

1. After V_CCreaches V_CC(Min.), wait 200 µs with CS2 low. Then the device gets into the normal operation.

Functional Description

Mode

CS1#

CS2

X

OE#

X

WE#

LB#

X

UB#

X

I/O_1-8

High-Z

D_OUT

I/O_9-16

High-Z

D_OUT

Power

Standby

Active

Deselected

H

X

L

X

H

L

X

H

L

H

X

Output Disabled

Outputs Disabled

Lower Byte Read

Upper Byte Read

Word Read

H

L

H

X

L

Active

H

L

H

L

Active

H

L

H

L

High-Z

D_OUT

Active

H

L

D_OUT

Active

Lower Byte Write

Upper Byte Write

Word Write

H

X

L

H

L

D_IN

High-Z

D_IN

Active

H

X

L

H

L

High-Z

D_IN

Active

H

X

L

D_IN

Active

Legend:X = Don’t care (must be low or high state).

May 3, 2004 pSRAM_Type02_15A0 Type 2 pSRAM

128

P r e l i m i n a r y

Absolute Maximum Ratings

Item

Symbol

V_{IN ,}V_OUT

V_CC

Ratings

Unit

V

Voltage on any pin relative to V_SS

Voltage on V_CCsupply relative to V_SS

Power Dissipation

-0.2 to V_CC+0.3V

-0.2 to 3.6V

1.0

V

P_D

W

Operating Temperature

T_A

-40 to 85

°C

Notes:

1. Stresses greater than those listed under "Absolute Maximum Ratings" section may cause permanent damage to the device.

Functional operation should be restricted to be used under recommended operating condition. Exposure to absolute

maximum rating conditions longer than 1 second may affect reliability.

DC Recommended Operating Conditions

Symbol

V_CC

Parameter

Power Supply Voltage

Ground

Min

Typ

2.9

0

Max

Unit

2.7

3.1

V_SS

0

2.2

0

V_CC+ 0.3 (Note 2)

0.6

V

V_IH

Input High Voltage

Input Low Voltage

—

V_IL

-0.2 (Note 3)

—

Notes:

1. TA=-40 to 85°C, otherwise specified.

2. Overshoot: V_CC+1.0V in case of pulse width ≤ 20ns.

3. Undershoot: -1.0V in case of pulse width ≤ 20ns.

4. Overshoot and undershoot are sampled, not 100% tested.

Capacitance (Ta = 25°C, f = 1 MHz)

Symbol

C_IN

Parameter

Test Condition

V_IN= 0V

Min

—

Max

8

Unit

pF

Input Capacitance

C_OIO

Input/Output Capacitance

V_OUT= 0V

—

10

pF

Note: This parameter is sampled periodically and is not 100% tested.

DC and Operating Characteristics

Common

Item

Symbol

Test Conditions

Min

Typ

Max

Unit

Input Leakage Current

I_LI

V_IN=V_SSto V_CC

-1

—

1

µA

CS1#=V_IHor CS2=V_ILor OE#=V_IHor WE#=V_ILor

LB#=UB#=V_IH, V_IO=V_SSto V_CC

Output Leakage Current

I_LO

-1

—

µA

Output Low Voltage

Output High Voltage

V_OL

V_OH

I_OL=2.1mA

—

0.4

—

V

I_OH=-1.0mA

2.4

129

Type 2 pSRAM

pSRAM_Type02_15A0 May 3, 2004

P r e l i m i n a r y

16M pSRAM

Item

Symbol

Test Conditions

Cycle time=1µs, 100% duty, I_IO=0mA,

Min Typ Max Unit

I_CC1

CS1# 0.2V, LB# 0.2V and/or UB# 0.2V,

≤

—

7

mA

CS2 V_CC-0.2V, V_IN0.2V or V_INVCC-0.2V

≥

≤

≥

Cycle time=Min, I_IO=0mA, 100% duty,

CS1#=V_IL, CS2=V_IHLB#=V_ILand/or UB#=V_IL,

V_IN=V_IHor V_IL

Average Operating

Current

Async

30 mA

35 mA

I_CC2

Cycle time=t_RC+3t_PC, I_IO=0mA, 100% duty,

CS1#=V_IL, CS2=V_IHLB#=V_ILand/or UB#=V_IL,

V_IN-V_IHor V_IL

Page

Other inputs=0-VCC

1. CS1#

controlled) or

2. 0V CS2

≥

V_CC- 0.2, CS2

≥

V_CC- 0.2V (CS1#

Standby Current (CMOS)

I_SB1(Note 1)

—

80 mA

≤

≤ 0.2V (CS2 controlled)

Notes:

1. Standby mode is supposed to be set up after at least one active operation after power up. ISB1 is measure after 60ms from

the time when standby mode is set up.

32M pSRAM

Item

Symbol

Test Conditions

Min Typ Max Unit

Cycle time=1µs, 100% duty, I_IO=0mA,

I_CC1

CS1#

≤

0.2V, LB#

≤

0.2V and/or UB#

≤

0.2V,

—

7

mA

CS2 V_CC-0.2V, V_IN

≥

≤

0.2V or V_INVCC-0.2V

≥

Cycle time=Min, I_IO=0mA, 100% duty,

CS1#=V_IL, CS2=V_IHLB#=V_ILand/or UB#=V_IL,

V_IN=V_IHor V_IL

Average Operating

Current

Async

35 mA

40 mA

I_CC2

Cycle time=t_RC+3t_PC, I_IO=0mA, 100% duty,

CS1#=V_IL, CS2=V_IHLB#=V_ILand/or UB#=V_IL,

V_IN-V_IHor V_IL

Page

Other inputs=0-VCC

1. CS1#

controlled) or

2. 0V CS2

≥

V_CC- 0.2, CS2

≥

V_CC- 0.2V (CS1#

Standby Current (CMOS)

I_SB1(Note 1)

—

100 mA

≤

≤ 0.2V (CS2 controlled)

Notes:

1. Standby mode is supposed to be set up after at least one active operation after power up. ISB1 is measure after 60ms from

the time when standby mode is set up.

May 3, 2004 pSRAM_Type02_15A0

Type 2 pSRAM

130

P r e l i m i n a r y

64M pSRAM

Item

Symbol

Test Conditions

Min Typ Max Unit

Cycle time=1µs, 100% duty, I_IO=0mA,

I_CC1

CS1#

≤

0.2V, LB#

≤

0.2V and/or UB#

≤

0.2V,

—

TBD mA

CS2 V_CC-0.2V, V_IN

≥

≤

0.2V or V_INVCC-0.2V

≥

Cycle time=Min, I_IO=0mA, 100% duty,

CS1#=V_IL, CS2=V_IHLB#=V_ILand/or UB#=V_IL,

V_IN=V_IHor V_IL

Average Operating

Current

Async

I_CC2

Cycle time=t_RC+3t_PC, I_IO=0mA, 100% duty,

CS1#=V_IL, CS2=V_IHLB#=V_ILand/or UB#=V_IL,

V_IN-V_IHor V_IL

Page

Other inputs=0-VCC

1. CS1#

controlled) or

2. 0V CS2

≥

V_CC- 0.2, CS2

≥

V_CC- 0.2V (CS1#

Standby Current (CMOS)

I_SB1(Note 1)

—

TBD mA

≤

≤ 0.2V (CS2 controlled)

Notes:

1. Standby mode is supposed to be set up after at least one active operation after power up. ISB1 is measure after 60ms from

the time when standby mode is set up.

AC Operating Conditions

Test Conditions (Test Load and Test Input/Output Reference)

Input pulse level: 0.4 to 2.2V

Input rising and falling time: 5ns

Input and output reference voltage: 1.5V

Output load (See Figure 35): CL=50pF

Dout

CL

Figure 35. Output Load

Note: Including scope and jig capacitance.

131

Type 2 pSRAM

pSRAM_Type02_15A0 May 3, 2004

P r e l i m i n a r y

ACC Characteristics (Ta = -40°C to 85°C, V_CC= 2.7 to 3.1 V)

Speed Bins

70ns

Symbol

Parameter

Min

Max

Unit

ns

t_RC

Read Cycle Time

70

—

70

35

70

—

t_AA

Address Access Time

—

t_CO

t_OE

Chip Select to Output

Output Enable to Valid Output

UB#, LB# Access Time

Chip Select to Low-Z Output

—

t_BA

—

t_LZ

10

t_BLZ

t_OLZ

t_HZ

UB#, LB# Enable to Low-Z Output

Output Enable to Low-Z Output

Chip Disable to High-Z Output

UB#, LB# Disable to High-Z Output

Output Disable to High-Z Output

Output Hold from Address Change

Page Cycle Time

10

—

5

—

0

25

—

t_BHZ

t_OHZ

t_OH

t_PC

0

5

25

—

t_PA

Page Access Time

—

20

—

t_WC

t_CW

t_AS

Write Cycle Time

70

Chip Select to End of Write

Address Set-up Time

60

—

0

—

t_AW

t_BW

t_WP

t_WR

t_WHZ

t_DW

t_DH

t_OW

Address Valid to End of Write

UB#, LB# Valid to End of Write

Write Pulse Width

60

—

60

—

55 (Note 1)

—

Write Recovery Time

0

—

Write to Output High-Z

25

—

Data to Write Time Overlap

Data Hold from Write Time

End Write to Output Low-Z

30

0

—

5

—

Notes:

1. t_WP(min)=70ns for continuous write operation over 50 times.

May 3, 2004 pSRAM_Type02_15A0

Type 2 pSRAM

132

P r e l i m i n a r y

Timing Diagrams

Read Timings

tRC

Address

Data Out

tAA

tOH

Data Valid

Previous Data Valid

Figure 36. Timing Waveform of Read Cycle(1)

Notes:

1. Address Controlled, CS1#=OE#=V_IL, CS2=WE#=V_IH, UB# and/or LB#=V_IL

.

tRC

Address

tOH

tAA

tCO

CS1#

CS2

tHZ

tBA

UB#, LB#

tBHZ

tOE

OE#

tOLZ

tBLZ

tLZ

tOHZ

High-Z

Data out

Data Valid

Figure 37. Timing Waveform of Read Cycle(2)

Notes:

1. WE#=V_IH

.

Address¹⁾

A1~A0

Valid

Address

Valid

Address

Address Address Address

t

AA

t

PC

CS1#

CS2

t

CO

OE#

t

PA

t

OHZ

t

OE

High Z

Data

Valid

Data

Valid

Data

Valid

Data

Valid

DQ15~DQ0

Figure 38. Timing Waveform of Read Cycle(2)

Notes:

133

Type 2 pSRAM

pSRAM_Type02_15A0 May 3, 2004

P r e l i m i n a r y

1. 16Mb : A2 ~ A19, 32Mb : A2 ~ A20, 64Mb : A2 ~ A21.

t_HZand t_OHZare defined as the time at which the outputs achieve the open circuit conditions and are not referenced to

output voltage levels.

At any given temperature and voltage condition, t_HZ(Max.) is less than t_LZ(Min.) both for a given device and from device

to device interconnection.

t_OE(max) is met only when OE# becomes enabled after t_AA(max).

If invalid address signals shorter than min. t_RCare continuously repeated for over 4µs, the device needs a normal read

timing(t_RC) or needs to sustain standby state for min. t_RCat least once in every 4µs.

Write Timings

tWC

Address

tCW

tWR

CS1#

CS2

tAW

tBW

UB#, LB#

tWP

WE#

tAS

tDW

tDH

High-Z

Data in

Data Valid

tWHZ

tOW

Data Undefined

Data out

Figure 39. Write Cycle #1 (WE# Controlled)

tWC

Address

tWR

tAS

tCW

tAW

CS1#

CS2

tBW

UB#, LB#

tWP

WE#

tDW

tDH

Data Valid

Data in

High-Z

Data out

Figure 40. Write Cycle #2 (CS1# Controlled)

May 3, 2004 pSRAM_Type02_15A0

Type 2 pSRAM

134

P r e l i m i n a r y

tWC

Address

tWR

tAS

tCW

tAW

CS1#

CS2

tBW

UB#, LB#

WE#

tWP(1)

tDW

tDH

Data Valid

Data in

Data out

High-Z

Figure 41. Timing Waveform of Write Cycle(3) (CS2 Controlled)

t

WC

Address

CS1#

t

WR

t

CW

t

AW

CS2

t

BW

UB#, LB#

t

AS

t

WP

WE#

t

DH

t

DW

Data Valid

Data in

Data out

High-Z

Figure 42. Timing Waveform of Write Cycle(4) (UB#, LB# Controlled)

Notes:

1. A write occurs during the overlap(t_WP) of low CS1# and low WE#. A write begins when CS1# goes low and WE# goes low

with asserting UB# or LB# for single byte operation or simultaneously asserting UB# and LB# for double byte operation. A

write ends at the earliest transition when CS1# goes high and WE# goes high. The t_WPis measured from the beginning of

write to the end of write.

2.

t_CWis measured from the CS1# going low to the end of write.

3. t_ASis measured from the address valid to the beginning of write.

4. t_WRis measured from the end of write to the address change. t_WRis applied in case a write ends with CS1# or WE# going

high.

135

Type 2 pSRAM

pSRAM_Type02_15A0 May 3, 2004

P r e l i m i n a r y

pSRAM Type 6

2M Word by 16-bit Cmos Pseudo Static RAM (32M Density)

4M Word by 16-bit Cmos Pseudo Static RAM (64M Density)

Features

Single power supply voltage of 2.6 to 3.3 V

Direct TTL compatibility for all inputs and outputs

Deep power-down mode: Memory cell data invalid

Page operation mode:

— Page read operation by 8 words

Logic compatible with SRAM R/W ( ) pin

Standby current

— Standby = 70 µA (32M)

— Standby = 100 µA (64M)

— Deep power-down Standby = 5 µA

Access Times

32M

64M

Access Time

70 ns

25 ns

30 ns

CE1# Access Time

OE# Access Time

Page Access Time

Pin Description

Pin Name

Description

A₀to A₂₁

A0 to A2

I/O1 to I/O16

CE1#

Address Inputs

Page Address Inputs

Data Inputs/Outputs

Chip Enable Input

Chip select Input

Write Enable Input

Output Enable Input

Data Byte Control Inputs

Power Supply

CE2

WE#

OE#

LB#,UB#

V_DD

GND

Ground

NC

Not Connection

April 26, 2004 pSRAM_Type06_14_A0

pSRAM Type 6

136

P r e l i m i n a r y

Functional Description

Mode

Read(Word)

CE1#

CE2

H

OE#

L

WE#

LB#

L

UB# Address

I/O_1-8

D_OUT

I/O_9-16

D_OUT

Power

I_DDO

I_DDSD

L

H

L

H

L

X

Read(Lower Byte)

Read(Upper Byte)

Write(Word)

H

L

D_OUT

High-Z

D_OUT

H

L

H

L

High-Z

D_IN

H

X

L

D_IN

Write(Lower Byte)

Write(Upper Byte)

Outputs Disabled

Standby

H

X

L

H

L

D_IN

Invalid

D_IN

H

X

L

H

X

Invalid

High-Z

H

X

H

X

High-Z

H

X

Deep Power-down Standby

L

X

Legend:L = Low-level Input (V_IL), H = High-level Input (V_IH), X = V_ILor V_IH, High-Z = High Impedence.

Absolute Maximum Ratings

Symbol

V_DD

V_IN

Rating

Value

-1.0 to 3.6

-40 to 85

-55 to 150

0.6

Unit

V

Power Supply Voltage

Input Voltage

V

V_OUT

T_opr

Output Voltage

V

Operating Temperature

Storage Temperature

Power Dissipation

°C

W

T_strg

P_D

I_OUT

Short Circuit Output Current

50

mA

DC Recommended Operating Conditions (Ta = -40°C to 85°C)

Symbol

V_DD

Parameter

Min

2.6

Typ

2.75

—

Max

Unit

Power Supply Voltage

Input High Voltage

Input Low Voltage

3.3

V_DD+ 0.3 (Note)

0.4

V_IH

2.0

V

V_IL

-0.3 (Note)

—

Note: V_IH(Max) V_DD= 1.0 V with 10 ns pulse width. V_IL(Min) -1.0 V with 10 ns pulse width.

DC Characteristics (Ta = -40°C to 85°C, VDD = 2.6 to 3.3 V) (See Note 3 to 4)

Symbol

Parameter

Test Condition

Min

Typ.

Max

Unit

Input Leakage

Current

I_IL

V_IN= 0 V to V_DD

-1.0

—

+1.0

µA

Output Leakage

Current

I_LO

Output disable, V_OUT= 0 V to V_DD

I_OH= - 0.5 mA

-1.0

2.0

—

¾

+1.0

V

µA

V

V_OH

Output High Voltage

137

pSRAM Type 6

pSRAM_Type06_14_A0 April 26, 2004

P r e l i m i n a r y

Symbol

Parameter

Test Condition

Min

—

Typ.

—

Max

0.4

40

Unit

V_OL

Output Low Voltage

I_OL= 1.0 mA

V

ET5UZ8A-43DS

ET5VB5A-43DS

—

CE1#= V_IL, CE2 = V_IH, I_OUT= 0

mA, t_RC= min

I_DDO1Operating Current

mA

—

50

Page Access

I_DDO2

CE1#= V_IL, CE2 = V_IH, I_OUT= 0 mA

Page add. cycling, t_RC= min

—

25

Operating Current

ET5UZ8A-43DS

ET5VB5A-43DS

—

70

mA

µA

Standby

I_DDS

CE1# = V_DD- 0.2 V,

CE2 = V_DD- 0.2 V

Current(MOS)

100

Deep Power-down

I_DDSD

CE2 = 0.2 V

—

5

µA

Standby Current

Capacitance (Ta = 25°C, f = 1 MHz)

Symbol

C_IN

Parameter

Test Condition

Max

10

Unit

Input Capacitance

Output Capacitance

V_IN= GND

pF

C_OUT

V_OUT= GND

10

Note: This parameter is sampled periodically and is not 100% tested.

AC Characteristics and Operating Conditions

(Ta = -40°C to 85°C, VDD = 2.6 to 3.3 V) (See Note 5 to 11)

Symbol

t_RC

Parameter

Min

70

—

Max

Unit

Read Cycle Time

10000

70

ns

t_ACC

t_CO

t_OE

Address Access Time

Chip Enable (CE1#) Access Time

Output Enable Access Time

—

70

—

25

t_BA

Data Byte Control Access Time

Chip Enable Low to Output Active

Output Enable Low to Output Active

Data Byte Control Low to Output Active

Chip Enable High to Output High-Z

Output Enable High to Output High-Z

Data Byte Control High to Output High-Z

Output Data Hold Time

—

25

t_COE

t_OEE

t_BE

10

0

—

0

—

t_OD

t_ODO

t_BD

—

20

—

20

—

20

t_OH

t_PM

10

70

30

—

Page Mode Time

10000

—

t_PC

Page Mode Cycle Time

t_AA

Page Mode Address Access Time

Page Mode Output Data Hold Time

Write Cycle Time

30

t_AOH

t_WC

10

70

—

10000

April 26, 2004 pSRAM_Type06_14_A0

pSRAM Type 6

138

P r e l i m i n a r y

Symbol

t_WP

Parameter

Min

50

70

60

0

Max

—

Unit

ns

µs

ms

ns

µs

Write Pulse Width

t_CW

t_BW

t_AW

t_AS

Chip Enable to End of Write

—

Data Byte Control to End of Write

Address Valid to End of Write

Address Set-up Time

Write Recovery Time

—

t_WR

t_CEH

t_WEH

t_ODW

t_OEW

t_DS

0

—

Chip Enable High Pulse Width

Write Enable High Pulse Width

WE# Low to Output High-Z

WE# High to Output Active

Data Set-up Time

10

6

—

0

20

30

0

—

t_DH

Data Hold Time

t_CS

CE2 Set-up Time

0

t_CH

CE2 Hold Time

300

10

0

t_DPD

t_CHC

t_CHP

CE2 Pulse Width

CE2 Hold from CE1#

CE2 Hold from Power On

30

AC Test Conditions

Parameter

Output load

Condition

30 pF + 1 TTL Gate

V_DD- 0.2 V, 0.2 V

V_DDx 0.5

Input pulse level

Timing measurements

Reference level

t_R, t_F

V_DDx 0.5

5 ns

139

pSRAM Type 6

pSRAM_Type06_14_A0 April 26, 2004

P r e l i m i n a r y

Timing Diagrams

Read Timings

t

RC

Address

A0 to A20(32M)

A0 to A21(64M)

t

ACC

OH

t

CO

CE1#

Fix-H

CE2

OE#

WE#

t

OD

OE

t

ODO

t

BA

,

UB# LB#

t

BE

t

BD

t

OEE

D

OUT

Hi-Z

VALID DATA OUT

Hi-Z

t

COE

I/O1 to I/O16

INDETERMINATE

Figure 43. Read Cycle

April 26, 2004 pSRAM_Type06_14_A0

pSRAM Type 6

140

P r e l i m i n a r y

t

PM

Address

A0 to A2

t

PC

RC

Address

A3 to A20(32M)

A3 to A21(64M)

CE1#

Fix-H

CE2

OE#

WE#

UB#, LB#

t

OD

OE

t

BD

t

BA

t

AOH

t

OEE

OH

t

BE

D

OUT

D

OUT

D

OUT

D

OUT

D

OUT

Hi-Z

I/O1 to I/O16

t

COE

t

ODO

CO

AA

* Maximum 8 words

t

ACC

Figure 44. Page Read Cycle (8 Words Access)

141

pSRAM Type 6

pSRAM_Type06_14_A0 April 26, 2004

P r e l i m i n a r y

Write Timings

t

WC

Address

A0 to A20(32M)

A0 to A21(64M)

t

WEH

AW

t

AS

WP

WR

WE#

t

CW

WR

CE1#

t

CH

CE2

t

BW

WR

UB#, LB#

t

OEW

ODW

D

OUT

(See Note 10)

Hi-Z

(See Note 11)

I/O1 to I/O16

t

DH

DS

D

IN

(See Note 9)

VALID DATA IN

(See Note 9)

I/O1 to I/O16

Figure 45. Write Cycle #1 (WE# Controlled) (See Note 8)

April 26, 2004 pSRAM_Type06_14_A0

pSRAM Type 6

142

P r e l i m i n a r y

t

WC

Address

A0 to A20(32M)

A0 to A21(64M)

t

AW

t

AS

WP

WR

WE#

t

CEH

t

CW

WR

CE1#

CE2

t

CH

t

BW

WR

UB#, LB#

t

ODW

BE

D

OUT

Hi-Z

I/O1 to I/O16

t

COE

t

DH

DS

D

IN

(See Note 9)

VALID DATA IN

I/O1 to I/O16

Figure 46. Write Cycle #2 (CE# Controlled) (See Note 8)

Deep Power-down Timing

CE1#

t

DPD

CE2

t

CH

CS

Figure 47. Deep Power Down Timing

Power-on Timing

V

min

DD

V

DD

CE1#

CE2

t

CHC

t

CH

t

CHP

Figure 48. Power-on Timing

143

pSRAM Type 6

pSRAM_Type06_14_A0 April 26, 2004

P r e l i m i n a r y

Provisions of Address Skew

Read

In case multiple invalid address cycles shorter than t_RCmin sustain over 10 µs in

an active status, at least one valid address cycle over t_RCmin is required during

10µs.

over 10µs

CE1#

WE#

Address

t min

RC

Figure 49. Read

Write

In case multiple invalid address cycles shorter than t_WCmin sustain over 10 µs in

an active status, at least one valid address cycle over t_WCmin is required during

10 µs.

CE1#

WE#

t min

WP

Address

t min

WC

Figure 50. Write

Notes:

1. Stresses greater than listed under "Absolute Maximum Ratings" section may cause permanent damage to the device.

2. All voltages are reference to GND.

3. I_DDOdepends on the cycle time.

4. I_DDOdepends on output loading. Specified values are defined with the output open condition.

5. AC measurements are assumed t_R, t_F= 5 ns.

6. Parameters t_OD, t_ODO, t_BDand t_ODW define the time at which the output goes the open condition and are not output voltage

reference levels.

7. Data cannot be retained at deep power-down stand-by mode.

8. If OE# is high during the write cycle, the outputs will remain at high impedance.

9. During the output state of I/O signals, input signals of reverse polarity must not be applied.

10. If CE1# or LB#/UB# goes LOW coincident with or after WE# goes LOW, the outputs will remain at high impedance.

11. If CE1# or LB#/UB# goes HIGH coincident with or before WE# goes HIGH, the outputs will remain at high impedance.

April 26, 2004 pSRAM_Type06_14_A0

pSRAM Type 6

144

P r e l i m i n a r y

pSRAM Type 7

16Mb (1M word x 16-bit)

32Mb (2M word x 16-bit)

64Mb (4M word x 16-bit)

CMOS 1M/2M/4M-Word x 16 bit Fast Cycle Random Access Memory with Low

Power SRAM Interface

Features

Asynchronous SRAM Interface

Fast Access Time

— tCE = tAA = 60ns max (16M)

— tCE = tAA = 65ns max (32M/64M)

8 words Page Access Capability

— tPAA = 20ns max (32M/64M)

Low Voltage Operating Condition

— VDD = +2.7V to +3.1V

Wide Operating Temperature

— TA = -30°C to +85°C

Byte Control by LB and UB

Low Power Consumption

— IDDA1 = 20mA max (16M)

— IDDA1 = 30mA max (32M)

— IDDA1 =TBDmA max (64M)

— IDDS1 = 100µA max (16M)

— IDDS1 = 80µA max (32M)

— IDDS1 = TBDµA max (64M)

Various Power Down mode

— Sleep, 4M-bit Partial or 8M-bit Partial (32M)

— Sleep, 8M-bit Partial or 16M-bit Partial (64M

Pin Description

Pin Name

A₂₁to A₀

CE1#

CE2#

WE#

Description

Address Input : A₁₉to A₀for 16M, A₂₀to A₀for 32M, A₂₁to A₀for 64M

Chip Enable (Low Active)

Chip Enable (High Active)

Write Enable (Low Active)

OE#

Output Enable (Low Active)

UB#

Upper Byte Control (Low Active)

Lower Byte Control (Low Active)

Upper Byte Data Input/Output

Lower Byte Data Input/Output

Power Supply

LB#

DQ_{16 9}

-

DQ₈-₁

V_DD

May 4, 2004 pSRAM_Type07_13_A0

pSRAM Type 7

146

P r e l i m i n a r y

Pin Name

Description

V_SS

Ground

Functional Description

Mode

Standby (Deselect)

CE2#

CE1#

H

WE#

OE#

X

LB#

X

UB#

X

A_21-0

X

DQ_8-1

High-Z

DQ_16-9

High-Z

H

L

X

H

Output Disable (Note 1)

Output Disable (No Read)

Read (Upper Byte)

Read (Lower Byte)

Read (Word)

H

X

Note 3

Valid

X

High-Z

H

L

H

L

High-Z

Output Valid

High-Z

H

L

H

L

Output Valid

L

Output Valid Output Valid

No Write

H

L

H

L

Invalid

Input Valid

Invalid

Write (Upper Byte)

Write (Lower Byte)

Write (Word)

L

H (Note 4)

H

L

Input Valid

High-Z

L

Input Valid

High-Z

Power Down

X

Legend:L = V_IL, H = V_IH, X can be either V_ILor V_IH, High-Z = High Impedence.

Notes:

1. Should not be kept this logic condition longer than 1ms. Please contact local Spansion representative for the relaxation of

1ms limitation.

2. Power Down mode can be entered from Standby state and all DQ pins are in High-Z state. Data retention depends on the

selection of Power Down Program, 16M has data retetion in all modes except Power Down. Refer to POWER DOWN for the

detail.

3. Can be either V_ILor V_IHbut must be valid before Read or Write.

4. OE# can be V_ILduring Write operation if the following conditions are satisfied:

(1) Write pulse is initiated by CE1# (refer to CE1# Controlled Write timing), or cycle time of the previous operation cycle is

satisfied.

(2) OE# stays V_ILduring Write cycle

Power Down (for 32M, 64M Only)

Power Down

The Power Down is low power idle state controlled by CE2. CE2 Low drives the

device in power down mode and maintains low power idle state as long as CE2 is

kept Low. CE2 High resumes the device from power down mode. These devices

have three power down mode. These can be proammed by series of read/write

operation. Each mode has follwoing features.

32M

Retention Data

No

64M

Retention Data

No

Mode

Retention Address

N/A

Mode

Retention Address

N/A

Sleep (default)

4M Partial

Sleep (default)

8M Partial

4M bit

00000h to 3FFFFh

00000h to 7FFFFh

8M bit

00000h to 7FFFFh

00000h to FFFFFh

8M Partial

8M bit

16M Partial

16M bit

147

pSRAM Type 7

pSRAM_Type07_13_A0 May 4, 2004

P r e l i m i n a r y

The default state is Sleep and it is the lowest power consumption but all data will

be lost once CE2 is brought to Low for Power Down. It is not required to program

to Sleep mode after power-up.

Power Down Program Sequence

The program requires total 6 read/write operation with unique address. Between

each read/write operation requires that device be in standby mode. Following

table shows the detail sequence.

Cycle #

1st

Operation

Read

Address

3FFFFFh (MSB)

3FFFFFh

Data

Read Data (RDa)

RDa

2nd

3rd

Write

Read

3FFFFFh

RDa

4th

3FFFFFh

Don’t Care (X)

X

5th

3FFFFFh

6th

Address Key

Read Data (RDb)

The first cycle is to read from most significient address (MSB).

The second and third cycle are to write back the data (RDa) read by first cycle.

If the second or third cycle is written into the different address, the program is

cancelled and the data written by the second or third cycle is valid as a normal

write operation.

The forth and fifth cycle is to write to MSB. The data of forth and fifth cycle is

don’t-care. If the forth or fifth cycle is written into different address, the program

is also cancelled but write data may not be wrote as normal write operation.

The last cycle is to read from specific address key for mode selection.

Once this program sequence is performed from a Partial mode to the other Partial

mode, the written data stored in memory cell array may be lost. So, it should per-

form this program prior to regular read/write operation if Partial mode is used.

Address Key

The address key has following format.

Mode

Address

32M

Sleep (default)

4M Partial

8M Partial

N/A

64M

Sleep (default)

N/A

A21

1

A20

1

A19

1

A18 - A0

Binary

1

3FFFFFh

37FFFFh

2FFFFFh

27FFFFh

1

0

8M Partial

16M Partial

1

0

1

0

May 4, 2004 pSRAM_Type07_13_A0

pSRAM Type 7

148

P r e l i m i n a r y

Absolute Maximum Ratings

Item

Voltage of V_DDSupply Relative to V_SS

Voltage at Any Pin Relative to V_SS

Short Circuit Output Current

Storage temperature

Symbol

V_DD

Value

Unit

V

-0.5 to +3.6

±50

V_IN, V_OUT

I_OUT

V

mA

°C

T_STG

-55 to +125

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature,

etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

Recommended Operating Conditions (See Warning Below)

Parameter

Symbol

V_DD

V_SS

V_IH

Min

2.7

Max

3.1

Unit

V

Supply Voltage

0

V

High Level Input Voltage (Note 1)

Ambient Temperature

V_DD0.8

-0.3

-30

V_DD+0.2

V_DD0.2

85

V

V_IL

V

T_A

°C

Notes:

1. Maximum DC voltage on input and I/O pins are V_DD+0.2V. During voltage transitions, inputs may positive overshoot to

_DD+1.0V for periods of up to 5 ns.

V

2. Minimum DC voltage on input or I/O pins are -0.3V. During voltage transitions, inputs may negative overshoot V_SSto -1.0V

for periods of up to 5ns.

WARNING: Recommended operating conditions are normal operating ranges for the semiconductor device. All the de-

vice’s electrical characteristics are warranted when operated within these ranges.

Always use semiconductor devices within the recommended operating conditions. Operation outside these ranges may

adversely affect reliability and could result in device failure.

No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet.

Users considering application outside the listed conditions are advised to contact their FUJITSU representative before-

hand.

Package Capacitance

Test conditions: T_A= 25°C, f = 1.0 MHz

Symbol

Description

Te s t S e tup

V_IN= 0V

V_IO= 0V

Typ

—

Max

5

Unit

pF

C_IN1

C_IN2

C_IO

Address Input Capacitance

Control Input Capacitance

Data Input/Output Capacitance

—

5

pF

—

8

pF

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pSRAM Type 7

pSRAM_Type07_13_A0 May 4, 2004

P r e l i m i n a r y

DC Characteristics (Under Recommended Conditions Unless Otherwise

Noted)

16M

32M

64M

Parameter

Symbol

Test Conditions

Min.

Max.

Min.

Max.

Min.

Max.

Unit

Input Leakage

Current

I_LI

V_IN= V_SSto V_DD

-1.0

+1.0

-1.0

+1.0

-1.0

+1.0

µ

A

Output Leakage

Current

V_OUT= V_SSto V_DD, Output

Disable

I_LO

V_OH

V_OL

-1.0

2.2

—

+1.0

—

-1.0

2.4

—

+1.0

—

-1.0

2.4

+1.0

—

µ

Output High

Voltage Level

V_DD= V_DD(min), I_OH= –

0.5mA

V

Output Low

Voltage Level

I_OL= 1mA

0.4

10

0.4

—

0.4

V

I_DDPS

I_DDP4

I_DDP8

SLEEP

—

10

40

50

TBD

µ

A

V_DD= V_DD(26)

max.,

V_IN= V_IHor V_IL,

4M Partial

8M Partial

N/A

µ

V_DDPower Down

Current

—

TBD

CE2

≤ 0.2V

16M

Partial

I_DDP16

N/A

µA

V_DD= V_DD(26)max.,

V_IN= V_IHor V_IL

CE1 = CE2 = V_IH

I_DDS

—

1

100

20

3

—

1.5

80

30

3

—

TBD

mA

V_DDStandby

Current

V_DD= V_DD(26)max.,

I_DDS1

I_DDA1

I_DDA2

V_IN

CE1 = CE2

≤

0.2V or V_IN

≥

V_DD– 0.2V,

µA

≥

V_DD– 0.2V

t_RC/ t_WC

=

minimum

V_DD= V_DD(26)

max.,

V_IN= V_IHor V_IL,

CE1 = V_ILand

CE2= V_IH,

mA

V_DDActive

Current

t_RC/ t_WC

=

1µs

I_OUT=0mA

V_DD= V_DD(26)max., V_IN= V_IH

or V_IL,

CE1 = V_ILand CE2= V_IH,

I_OUT=0mA, t_PRC= min.

V_DDPage Read

Current

I_DDA3

N/A

—

10

—

TBD

mA

Notes:

1. All voltages are referenced to V_SS

.

2. DC Characteristics are measured after following POWER-UP timing.

3. I_OUTdepends on the output load conditions.

May 4, 2004 pSRAM_Type07_13_A0

pSRAM Type 7

150

P r e l i m i n a r y

AC Characteristics (Under Recommended Operating Conditions Unless

Otherwise Noted)

Read Operation

16M

32M

64M

Parameter

Read Cycle Time

Symbol

t_RC

Min.

65

—

20

5

Max.

1000

65

Min.

65

—

20

5

Max.

1000

65

Unit

ns

Notes

70

—

1000

60

1, 2

CE1# Access Time

t_CE

3

OE# Access Time

t_OE

40

3

3, 5

3

Address Access Time

LB# / UB# Access Time

Page Address Access Time

Page Read Cycle Time

Output Data Hold Time

CE1# Low to Output Low-Z

OE# Low to Output Low-Z

t_AA

60

65

t_BA

30

t_PAA

t_PRC

t_OH

N/A

20

3,6

1, 6, 7

3

1000

—

1000

—

5

0

—

t_CLZ

t_OLZ

5

—

5

—

4

0

—

0

—

4

LB# / UB# Low to Output

Low-Z

t_BLZ

0

—

0

—

0

—

ns

4

CE1# High to Output High-Z

OE# High to Output High-Z

t_CHZ

t_OHZ

—

20

—

20

15

—

20

ns

3

LB# / UB# High to Output

High-Z

t_BHZ

—

-5

20

—

20

—

20

—

ns

3

Address Setup Time to CE1#

Low

t_ASC

–5

Address Setup Time to OE#

Low

t_ASO

t_AX

10

—

10

—

10

—

10

—

10

—

10

—

ns

Address Invalid Time

5, 8

9

Address Hold Time from CE1#

High

t_CHAH

-6

–6

Address Hold Time from OE#

High

t_OHAH

-6

—

–6

—

–6

—

ns

WE# High to OE# Low Time

for Read

t_WHOL

t_CP

10

1000

—

12

—

12

—

ns

10

CE1# High Pulse Width

Notes:

1. Maximum value is applicable if CE#1 is kept at Low without change of address input of A3 to A21. If needed by system

operation, please contact local Spansion representative for the relaxation of 1µs limitation.

2. Address should not be changed within minimum t_RC

.

3. The output load 50pF.

4. The output load 5pF.

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5. Applicable to A3 to A21 (32M and 64M) when CE1# is kept at Low.

6. Applicable only to A0, A1 and A2 (32M and 64M) when CE1# is kept at Low for the page address access.

7. In case Page Read Cycle is continued with keeping CE1# stays Low, CE1# must be brought to High within 4µs. In other

words, Page Read Cycle must be closed within 4µs.

8. Applicable when at least two of address inputs among applicable are switched from previous state.

9. t_RC(min) and t_PRC(min) must be satisfied.

10. If actual value of t_WHOLis shorter than specified minimum values, the actual t_AAof following Read may become longer by the

amount of subtracting actual value from specified minimum value.

May 4, 2004 pSRAM_Type07_13_A0

pSRAM Type 7

152

P r e l i m i n a r y

AC Characteristics

Write Operation

16M

32M

64M

Parameter

Write Cycle Time

Symbol

t_WC

Min.

70

0

Max.

1000

—

Min.

65

0

Max.

1000

—

Min.

65

0

Max.

1000

—

Unit

ns

Notes

1,2

3

Address Setup Time

CE1# Write Pulse Width

WE# Write Pulse Width

LB#/UB# Write Pulse Width

t_AS

ns

t_CW

45

—

40

—

40

—

ns

3

t_WP

—

ns

3

t_BW

—

ns

3

LB#/UB# Byte Mask Setup

Time

t_BS

-5

—

–5

—

–5

—

ns

4

LB#/UB# Byte Mask Hold

Time

t_BH

5

6

Write Recovery Time

CE1# High Pulse Width

WE# High Pulse Width

LB#/UB# High Pulse Width

Data Setup Time

t_WR

t_CP

0

10

7.5

10

15

0

—

0

12

7.5

12

0

—

0

12

7.5

12

0

—

ns

t_WHP

t_BHP

t_DS

1000

—

1000

—

1000

—

7

Data Hold Time

t_DH

—

OE# High to CE1# Low Setup

Time for Write

t_OHCL

-5

0

—

–5

0

—

–5

0

—

ns

8

9

OE# High to Address Setup

Time for Write

t_OES

LB# and UB# Write Pulse

Overlap

t_BWO

30

Notes:

1. Maximum value is applicable if CE1# is kept at Low without any address change. If the relaxation is needed by system

operation, please contact local Spansion representative for the relaxation of 1µs limitation.

2. Minimum value must be equal or greater than the sum of write pulse (t_CW, t_WPor t_BW) and write recovery time (t_WR).

3. Write pulse is defined from High to Low transition of CE1#, WE#, or LB#/UB#, whichever occurs last.

4. Applicable for byte mask only. Byte mask setup time is defined to the High to Low transition of CE1# or WE# whichever

occurs last.

5. Applicable for byte mask only. Byte mask hold time is defined from the Low to High transition of CE1# or WE# whichever

occurs first.

6. Write recovery is defined from Low to High transition of CE1#, WE#, or LB#/UB#, whichever occurs first.

7.

t_WPHminimum is absolute minimum value for device to detect High level. And it is defined at minimum V_IHlevel.

8. If OE# is Low after minimum t_OHCL, read cycle is initiated. In other words, OE# must be brought to High within 5ns after

CE1# is brought to Low. Once read cycle is initiated, new write pulse should be input after minimum t_RCis met.

9. If OE# is Low after new address input, read cycle is initiated. In other word, OE# must be brought to High at the same time

or before new address valid. Once read cycle is initiated, new write pulse should be input after minimum t_RCis met and data

bus is in High-Z.

153

pSRAM Type 7

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AC Characteristics

Power Down Parameters

16M

Symbol Min.

32M

64M

Parameter

Max.

—

Min. Max. Min.

Max.

—

Unit

ns

Note

CE2 Low Setup Time for Power Down Entry

CE2 Low Hold Time after Power Down Entry

t_CSP

10

80

10

65

—

10

65

t_C2LP

—

ns

CE1# High Hold Time following CE2 High after Power

Down Exit [SLEEP mode only]

t_CHH

t_CHHP

t_CHS

300

—

300

1

—

300

1

—

µ

s

1

2

1

CE1# High Hold Time following CE2 High after Power

Down Exit [not in SLEEP mode]

N/A

µ

CE1# High Setup Time following CE2 High after

Power Down Exit

0

—

0

ns

Notes:

1. Applicable also to power-up.

2. Applicable when 4M and 8M Partial mode is programmed.

Other Timing Parameters

16M

32M

64M

Parameter

Symbol

Min.

Max.

Min.

Max.

Min.

Max.

Unit

Note

CE1# High to OE# Invalid Time

for Standby Entry

t_CHOX

10

—

10

—

10

50

—

ns

CE1# High to WE# Invalid

Time for Standby Entry

t_CHWX

10

—

10

50

—

1

CE2 Low Hold Time after

Power-up

t_C2LH

N/A

µ

s

CE1# High Hold Time following

CE2 High after Power-up

t_CHH

t_T

300

1

—

300

1

—

300

1

—

µ

Input Transition Time

25

ns

2

Notes:

1. Some data might be written into any address location if t_CHWX(min) is not satisfied.

2. The Input Transition Time (t_T) at AC testing is 5ns as shown in below. If actual tT is longer than 5ns, it may violate AC

specification of some timing parameters.

May 4, 2004 pSRAM_Type07_13_A0

pSRAM Type 7

154

P r e l i m i n a r y

AC Characteristics

AC Test Conditions

Symbol

V_IH

Description

Te s t S e tup

Value

V_DD* 0.8

V_DD* 0.2

V_DD* 0.5

5

Unit

V

Note

Input High Level

V_IL

Input Low Level

V

V_REF

t_T

Input Timing Measurement Level

Input Transition Time

V

Between V_ILand V_IH

ns

AC Measurement Output Load Circuit

V_DD

DEVICE

UNDER

TEST

OUT

0.1µF

V_SS

50pF

Figure 51. AC Output Load Circuit

155

pSRAM Type 7

pSRAM_Type07_13_A0 May 4, 2004

P r e l i m i n a r y

Timing Diagrams

Read Timings

tRC

ADDRESS VALID

ADDRESS

tASC

tCE

tCHAH

tASC

CE1#

OE#

tCP

tCHZ

tOE

tOHZ

tBHZ

tBA

LB#/UB#

tBLZ

tOLZ

DQ

(Output)

tCLZ

VALID DATA OUTPUT

Figure 52. Read Timing #1 (Baisc Timing)

tOH

Note: This timing diagram assumes CE2=H and WE#=H.

tAx

tRC

ADDRESS

ADDRESS VALID

tAA

tOHAH

CE1#

Low

tASO

tOE

OE#

LB#/UB#

tOLZ

tOH

tOHZ

tOH

DQ

(Output)

VALID DATA OUTPUT

Figure 53. Read Timing #2 (OE# Address Access

VALID DATA OUTPUT

Note: This timing digaram assumes CE2=H and WE#=H.

May 4, 2004 pSRAM_Type07_13_A0

pSRAM Type 7

156

P r e l i m i n a r y

tAX

tRC

tAx

ADDRESS

ADDRESS VALID

tAA

Low

CE1#, OE#

tBA

LB#

tBA

UB#

tBHZ

tOH

tBHZ

tOH

tBLZ

DQ1-8

(Output)

VALID DATA

OUTPUT

tBHZ

VALID DATA

OUTPUT

tOH

tBLZ

DQ9-16

(Output)

VALID DATA OUTPUT

Figure 54. Read Timing #3 (LB#/UB# Byte Access)

Note: This timing diagram assumes CE2=H and WE#=H.

tRC

ADDRESS

(A21-A3)

ADDRESS VALID

tRC

tPRC

ADDRESS

(A2-A0)

ADDRESS

VALID

ADDRESS

VALID

ADDRESS

VALID

ADDRESS VALID

tASC

tCHAH

tPAA

CE1#

OE#

tCHZ

tCE

LB#/UB#

tOH

tCLZ

tOH

DQ

(Output)

VALID DATA OUTPUT

(Page Access)

VALID DATA OUTPUT

(Normal Access)

Figure 55. Read Timing #4 (Page Address Access after CE1# Control Access

for 32M and 64M Only)

Note: This timing diagram assumes CE2=H and WE#=H.

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pSRAM Type 7

pSRAM_Type07_13_A0 May 4, 2004

P r e l i m i n a r y

tRC

tAX

tRC

tAx

ADDRESS

(A21-A3)

ADDRESS VALID

tRC

tPRC

t^RC

tPRC

ADDRESS

(A2-A0)

ADDRESS

VALID

ADDRESS

VALID

ADDRESS

VALID

ADDRESS

VALID

tAA

tPAA

tAA

tPAA

CE1#

Low

tASO

tOE

OE#

tBA

LB#/UB#

tOLZ

tBLZ

tOH

DQ

(Output)

VALID DATA OUTPUT

(Page Access)

VALID DATA OUTPUT

(Normal Access)

Figure 56. Read Timing #5 (Random and Page Address Access for 32M and

64M Only)

Notes:

1. This timing diagram assumes CE2=H and WE#=H.

2. Either or both LB# and UB# must be Low when both CE1# and OE# are Low.

Write Timings

tWC

ADDRESS

CE1#

ADDRESS VALID

tAS

tCW

tWR

tAS

tCP

tAS

tWP

tAS

WE#

tWHP

tAS

tBW

tAS

LB#, UB#

tBHP

tOHCL

OE#

tDS

tDH

DQ

(Input)

VALID DATA INPUT

Figure 57. Write Timing #1 (Basic Timing)

Note: This timing diagram assumes CE2=H.

May 4, 2004 pSRAM_Type07_13_A0

pSRAM Type 7

158

P r e l i m i n a r y

tWC

ADDRESS VALID

ADDRESS

CE1#

tOHAH

Low

tAS

tWP

tWR

tAS

tWP

tWR

WE#

tWHP

LB#, UB#

OE#

tOES

tOHZ

tDS

tDH

tDS

tDH

DQ

(Input)

VALID DATA INPUT

Figure 58. Write Timing #2 (WE# Control)

VALID DATA INPUT

Note:This timing diagram assumes CE2=H.

tWC

ADDRESS VALID

ADDRESS

CE1#

Low

tAS

tWP

tAS

tWP

tWHP

tBS

WE#

LB#

tBH

tWR

tBS

tBH

UB#

tDS

tDH

DQ1-8

(Input)

VALID DATA INPUT

tDS

tDH

DQ9-16

(Input)

Figure 59. Write Timing #3-1 (WE#/LB#/UB# Byte Write Control)

Note: This timing diagram assumes CE2=H and OE#=H.

159

pSRAM Type 7

pSRAM_Type07_13_A0 May 4, 2004

P r e l i m i n a r y

tWC

ADDRESS VALID

ADDRESS

CE1#

Low

tWR

WE#

LB#

tWHP

tAS

tBW

tBS

tBH

tAS

tBW

tBH

tBS

UB#

tDS

tDH

DQ1-8

(Input)

VALID DATA INPUT

tDS

tDH

DQ9-16

(Input)

VALID DATA INPUT

Figure 60. Write Timing #3-2 (WE#/LB#/UB# Byte Write Control)

Note: This timing diagram assumes CE2=H and OE#=H.

tWC

ADDRESS VALID

ADDRESS

CE1#

Low

WE#

LB#

tWHP

tAS

tBW

tWR

tBS

tBH

tAS

tBW

tWR

tBS

tBH

UB#

tDS

tDH

DQ1-8

(Input)

VALID DATA INPUT

tDS

tDH

DQ9-16

(Input)

VALID DATA INPUT

Figure 61. Write Timing #3-3 (WE#/LB#/UB# Byte Write Control)

Note: This timing diagram assumes CE2=H and OE#=H.

May 4, 2004 pSRAM_Type07_13_A0

pSRAM Type 7

160

P r e l i m i n a r y

tWC

ADDRESS VALID

ADDRESS

CE1#

Low

WE#

LB#

tAS

tBW

tWR

tAS

tBW

tWR

tDH

tBHP

tBWO

tDS

tDH

tDS

DQ1-8

(Input)

VALID

DATA INPUT

VALID

DATA INPUT

tAS

tBW

tWR

tAS

tWR

tBWO

tBW

UB#

tBHP

tDS

tDH

tDS

tDH

DQ9-16

(Input)

VALID

DATA INPUT

VALID

DATA INPUT

Figure 62. Write Timing #3-4 (WE#/LB#/UB# Byte Write Control)

Note: This timing diagram assumes CE2=H and OE#=H.

Read/Write Timings

tWC

tRC

ADDRESS

CE1#

WRITE ADDRESS

READ ADDRESS

tCHAH

tAS

tCW

tWR

tASC

tCE

tCHAH

tCP

WE#

UB#, LB#

OE#

tOHCL

tCHZ

tOH

tDS

tDH

tCLZ

tOH

DQ

READ DATA OUTPUT

WRITE DATA INPUT

Figure 63. Read/Write Timing #1-1 (CE1# Control)

Notes:

1. This timing diagram assumes CE2=H.

2. Write address is valid from either CE1# or WE# of last falling edge.

161

pSRAM Type 7

pSRAM_Type07_13_A0 May 4, 2004

P r e l i m i n a r y

tWC

tRC

ADDRESS

CE1#

WRITE ADDRESS

READ ADDRESS

tCHAH

tAS

tWR

tASC

tCE

tCHAH

tCP

tWP

WE#

UB#, LB#

OE#

tOHCL

tOE

tCHZ

tOH

tDS

tDH

tOLZ

tOH

DQ

READ DATA OUTPUT

WRITE DATA INPUT

READ DATA OUTPUT

Figure 64. Read / Write Timing #1-2 (CE1#/WE#/OE# Control)

Notes:

1. This timing diagram assumes CE2=H.

2. OE# can be fixed Low during write operation if it is CE1# controlled write at Read-Write-Read sequence.

tWC

tRC

ADDRESS

CE1#

WRITE ADDRESS

READ ADDRESS

tOHAH

tAA

Low

tAS

tWR

tWP

WE#

UB#, LB#

OE#

tOES

tASO

tOE

tWHOL

tOHZ

tOH

tOHZ

tOH

tDS

tDH

tOLZ

DQ

READ DATA OUTPUT

WRITE DATA INPUT

Figure 65. Read / Write Timing #2 (OE#, WE# Control)

Notes:

1. This timing diagram assumes CE2=H.

2. CE1# can be tied to Low for WE# and OE# controlled operation.

May 4, 2004 pSRAM_Type07_13_A0

pSRAM Type 7

162

P r e l i m i n a r y

tWC

tRC

ADDRESS

CE1#

WRITE ADDRESS

READ ADDRESS

tAA

tOHAH

Low

WE#

tOES

tAS

tBW

tWR

tBA

UB#, LB#

OE#

tBHZ

tASO

tWHOL

tBHZ

tOH

tDS

tDH

tBLZ

tOH

DQ

READ DATA OUTPUT

WRITE DATA INPUT

Figure 66. Read / Write Timing #3 (OE#, WE#, LB#, UB# Control)

Notes:

1. This timing diagram assumes CE2=H.

2. CE1# can be tied to Low for WE# and OE# controlled operation.

CE1#

tCHS

tC2LH

tCHH

CE2

VDD

VDD min

0V

Figure 67. Power-up Timing #1

Note: The t_C2LHspecifies after V_DDreaches specified minimum level.

163

pSRAM Type 7

pSRAM_Type07_13_A0 May 4, 2004

P r e l i m i n a r y

CE1#

CE2

VDD

tCHH

VDD min

0V

Figure 68. Power-up Timing #2

Note: The t_CHHspecifies after V_DDreaches specified minimum level and applicable to both CE1# and CE2.

CE1#

tCHS

CE2

tCSP

tC2LP

tCHH (tCHHP)

High-Z

DQ

Power Down Entry

Power Down Mode

Power Down Exit

Figure 69. Power Down Entry and Exit Timing

Note: This Power Down mode can be also used as a reset timing if POWER-UP timing above could not be satisfied and

Power-Down program was not performed prior to this reset.

CE1#

tCHOX

tCHWX

OE#

WE#

Active (Read)

Standby

Active (Write)

Standby

Figure 70. Standby Entry Timing after Read or Write

Note: Both t_CHOXand t_CHWXdefine the earliest entry timing for Standby mode. If either of timing is not satisfied, it takes

t_RC(min) period for Standby mode from CE1# Low to High transition.

May 4, 2004 pSRAM_Type07_13_A0

pSRAM Type 7

164

P r e l i m i n a r y

tRC

tWC

tRC

MSB*¹

Key*²

ADDRESS

CE1#

tCP*³

tCP

OE#

WE#

LB#, UB#

DQ*³

RDa

Cycle #1

RDa

Cycle #2

RDa

Cycle #3

X

RDb

Cycle #6

Cycle #4

Cycle #5

Figure 71. Power Down Program Timing (for 32M/64M Only)

Notes:

1. The all address inputs must be High from Cycle #1 to #5.

2. The address key must confirm the format specified in page 148. If not, the operation and data are not guaranteed.

3. After t_CPfollowing Cycle #6, the Power Down Program is completed and returned to the normal operation.

165

pSRAM Type 7

pSRAM_Type07_13_A0 May 4, 2004

P r e l i m i n a r y

SRAM

4/8 Megabit CMOS SRAM

Common Features

Process Technology: Full CMOS

Power Supply Voltage: 2.7~3.3V

Three state outputs

Organization

Standby

Version

Density

4Mb

(I , Max.)

(I

, Max.)

Operating

22 mA

TBD

Mode

SB1

CC2

F

G

C

D

x8 or x16 (note 1)

X16

10 µA

Dual CS, UB# / LB# (tCS)

4Mb

10 µA

15 µA

TBD

8Mb

Notes:

1. UB#, LB# swapping is available only at x16. x8 or x16 select by BYTE# pin.

Pin Description

Pin Name

CS1#, CS2

OE#

Description

I/O

Chip Selects

I

Output Enable

WE#

Write Enable

BYTE#

Word (V_CC)/Byte (V_SS) Select

A0~A17 (4M)

A0~A18 (8M)

Address Inputs

I

SA

Address Input for Byte Mode

Data Inputs/Outputs

Power Supply

I

I/O

-

I/O0~I/O15

V_CC

V_SS

Ground

-

DNU

Do Not Use

-

NC

No Connection

-

167

SRAM

SRAM_Type01_02A0 June 15, 2004

P r e l i m i n a r y

Functional Description

4M Version F, 4M version G, 8M version C

CS1# CS2 OE# WE# BYTE#

SA

X

LB#

X

H

L

UB#

X

IO

Mode

Power

Standby

Active

0~7

8~15

H

X

L

X

L

X

H

L

X

H

L

X

High-Z

D_out

High-Z

D_out

Deselected

X

Deselected

X

H

X

H

X

Deselected

V_CC

Output Disabled

Lower Byte Read

Upper Byte Read

Word Read

X

L

Active

H

L

Active

L

H

L

High-Z

D_out

Active

L

D_out

Active

X

L

H

L

D_in

High-Z

D_in

Lower Byte Write

Upper Byte Write

Word Write

Active

L

H

L

High-Z

D_in

Active

L

D_in

Active

Note: X means don’t care (must be low or high state).

Byte Mode

CS1# CS2 OE# WE# BYTE#

SA

X

LB#

X

UB#

X

IO

Mode

Power

Standby

Active

0~7

8~15

H

X

L

X

L

X

H

L

X

H

L

X

High-Z

Deselected

X

Deselected

H

X

H

Deselected

L

V_CC

X

L

X

Output Disabled

L

X

L

X

L

Active

June 15, 2004 SRAM_Type01_02A0

SRAM

168

P r e l i m i n a r y

Functional Description

8M Version D

CS1# CS2 OE# WE#

LB#

X

H

L

UB#

X

IO

Mode

Power

Standby

Active

0~8

9~16

H

X

L

X

L

X

H

L

X

H

L

High-Z

D_out

High-Z

D_out

Deselected

X

Deselected

X

H

X

Deselected

Output Disabled

Lower Byte Read

Upper Byte Read

Word Read

X

L

Active

H

L

Active

L

H

L

High-Z

D_out

Active

L

D_out

Active

X

L

H

L

D_in

High-Z

D_in

Lower Byte Write

Upper Byte Write

Word Write

Active

L

H

L

High-Z

D_in

Active

L

D_in

Active

Note: X means don’t care (must be low or high state).

Absolute Maximum Ratings (4M Version F)

Item

Symbol

V_IN,V_OUT

V_CC

Ratings

Unit

Voltage on any pin relative to V_SS

Voltage on V_CCsupply relative to V_SS

Power Dissipation

-0.2 to V_CC+0.3V

V

-0.2 to 4.0V

1.0

P_D

W

Operating Temperature

T_A

-40 to 85

°C

Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional

operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

Absolute Maximum Ratings (4M Version G, 8M Version C, 8M Version D)

Item

Symbol

V_IN,V_OUT

V_CC

Ratings

-0.2 to V_CC+0.3V (Max. 3.6V)

-0.2 to 3.6V

Unit

V

Voltage on any pin relative to V_SS

Voltage on V_CCsupply relative to V_SS

Power Dissipation

V

P_D

1.0

W

Operating Temperature

T_A

-40 to 85

°C

Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional

operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

169

SRAM

SRAM_Type01_02A0 June 15, 2004

P r e l i m i n a r y

DC Characteristics

Recommended DC Operating Conditions (Note 1)

Item

Symbol

V_CC

Min

Typ

3.0

0

Max

Unit

V

Supply voltage

Ground

2.7

3.3

V_SS

0

2.2

0

V_CC+0.2 (Note 2)

0.6

V

Input high voltage

Input low voltage

V_IH

-

V

V_IL

-0.2 (Note 3)

-

V

Notes:

1. T_A= -40 to 85°C, unless otherwise specified.

2. Overshoot: Vcc+1.0V in case of pulse width ≤20ns.

3. Undershoot: -1.0V in case of pulse width ≤20ns.

4. Overshoot and undershoot are sampled, not 100% tested.

Capacitance (f=1MHz, T_A=25°C)

Item

Symbol

C_IN

Test Condition

Min

Max

8

Unit

Input capacitance

V_IN=0V

V_IO=0V

-

pF

Input/Output capacitance

C_IO

10

Note: Capacitance is sampled, not 100% tested

DC Operating Characteristics

Common

Typ

Min (Note) Max

Item

Symbol

Test Conditions

Unit

Input leakage current

I_LI

V_IN=V_SSto V_CC

CS1#=V_IHor CS2=V_ILor OE#=V_IHor

-1

-

1

µ

A

Output leakage current

I_LO

µ

WE#=V_ILor LB#=UB#=V_IH, V_IO=V_ssto V_CC

Output low voltage

Output high voltage

V_OL

V_OH

I_OL= 2.1mA

-

0.4

-

V

I_OH= -1.0mA

2.4

V

June 15, 2004 SRAM_Type01_02A0

SRAM

170

P r e l i m i n a r y

DC Operating Characteristics

4M Version F

Typ

Item

Symbol

Test Conditions

Min

(Note)

Max

Unit

Cycle time=1µs, 100% duty, I_IO=0mA, CS1# ≤ 0.2V,

CS2

BYTE#=V_SSor V_CC, V_IN

0.2V or/and UB# 0.2V

≥ V_CC-0.2V,

I_CC1

-

3

mA

≤

0.2V or V_IN≥ VCC-0.2V, LB#

≤

Average operating current

Cycle time=Min, I_IO=0mA, 100% duty, CS1# = V_IL,

CS2=V_IH,

I_CC2

-

22

10

mA

µA

BYTE# = V_SSor V_CC, V_IN=V_ILor V_IH, LB#

and UB# 0.2V

≤ 0.2V or/

≤

CS1#

≥ V_CC-0.2V, CS2 ≥ V_CC-0.2V (CS1# controlled)

I_SB1

(Note)

1.0

(Note)

or CS2 0.2V (CS2 controlled), BYTE# = V_SSor V_CC

≤

,

Standby Current (CMOS)

Other input =0~V_CC

Note: Typical values are not 100% tested.

DC Operating Characteristics

4M Version G

Typ

Item

Symbol

Test Conditions

Min

(Note)

Max

Unit

Cycle time=1µs, 100% duty, I_IO=0mA, CS1# ≤ 0.2V,

CS2

BYTE#=V_SSor V_CC, V_IN

0.2V or/and UB# 0.2V

≥ V_CC-0.2V,

I_CC1

-

4

mA

≤

0.2V or V_IN≥ VCC-0.2V, LB#

≤

Average operating current

Cycle time=Min, I_IO=0mA, 100% duty, CS1# = V_IL,

CS2=V_IH,

I_CC2

-

22

10

mA

µA

BYTE# = V_SSor V_CC, V_IN=V_ILor V_IH, LB#

and UB# 0.2V

≤ 0.2V or/

≤

CS1#

≥ V_CC-0.2V, CS2 ≥ V_CC-0.2V (CS1# controlled)

I_SB1

(Note)

3.0

(Note)

or CS2 0.2V (CS2 controlled), BYTE# = V_SSor V_CC

≤

,

Standby Current (CMOS)

Other input = 0~V_CC

Note: Typical values are not 100% tested.

171

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P r e l i m i n a r y

DC Operating Characteristics

8M Version C

Typ

Item

Symbol

Test Conditions

Min

(Note)

Max

Unit

Cycle time=1µs, 100% duty, I_IO=0mA, CS1# ≤ 0.2V,

CS2

BYTE#=V_SSor V_CC, V_IN

0.2V or/and UB# 0.2V

≥ V_CC-0.2V,

I_CC1

-

3

mA

≤

0.2V or V_IN≥ VCC-0.2V, LB#

≤

Average operating current

Standby Current (CMOS)

Cycle time=Min, I_IO=0mA, 100% duty, CS1# = V_IL,

CS2=V_IH,

I_CC2

-

22

15

mA

µA

BYTE# = V_SSor V_CC, V_IN=V_ILor V_IH, LB#

and UB# 0.2V

≤ 0.2V or/

≤

CS1#

≥ V_CC-0.2V, CS2 ≥ V_CC-0.2V (CS1# controlled)

I_SB1

(Note)

or CS2 0.2V (CS2 controlled), BYTE# = V_SSor V_CC

≤

,

Other input = 0~V_CC

Note: Typical values are not 100% tested.

DC Operating Characteristics

8M Version D

Typ

Item

Symbol

Test Conditions

Min

(Note)

Max

Unit

Cycle time=1µs, 100% duty, I_IO=0mA, CS1# ≤ 0.2V,

CS2

BYTE#=V_SSor V_CC, V_IN

0.2V or/and UB# 0.2V

≥ V_CC-0.2V,

I_CC1

-

TBD

mA

≤

0.2V or V_IN≥ VCC-0.2V, LB#

≤

Average operating current

Cycle time=Min, I_IO=0mA, 100% duty, CS1# = V_IL,

CS2=V_IH,

I_CC2

-

TBD

mA

µA

BYTE# = V_SSor V_CC, V_IN=V_ILor V_IH, LB#

and UB# 0.2V

≤ 0.2V or/

≤

CS1#

≥ V_CC-0.2V, CS2 ≥ V_CC-0.2V (CS1# controlled)

I_SB1

(Note)

or CS2 0.2V (CS2 controlled), BYTE# = V_SSor V_CC

≤

,

Standby Current (CMOS)

Other input = 0~V_CC

Note: Typical values are not 100% tested.

June 15, 2004 SRAM_Type01_02A0

SRAM

172

P r e l i m i n a r y

AC Operating Conditions

Test Conditions

Test Load and Test Input/Output Reference

Input pulse level: 0.4 to 2.2V

Input rising and falling time: 5ns

Input and output reference voltage: 1.5V

Output load (See Figure 72): CL= 30pF+1TTL

V

(note 3)

TM

R2 (note 2)

R1 (note 2)

CL (note 1)

Figure 72. AC Output Load

Notes:

1. Including scope and jig capacitance.

2. R1=3070Ω, R2=3150Ω.

3. V_TM=2.8V.

AC Characteristics

Read/Write Characteristics (V_CC=2.7-3.3V)

Speed Bins

70ns

Parameter List

Read cycle time

Symbol

t_RC

t_AA

t_CO1, t_CO2

t_OE

Min

Max

-

Units

ns

70

-

Address access time

70

35

70

-

Chip select to output

-

Output enable to valid output

LB#, UB# Access Time

-

t_BA

-

Chip select to low-Z output

LB#, UB# enable to low-Z output

Output enable to low-Z output

Chip disable to high-Z output

UB#, LB# disable to high-Z output

Output disable to high-Z output

Output hold from address change

t_LZ1, t_LZ2

t_BLZ

10

5

-

t_OLZ

-

t_HZ1, t_HZ2

t_BHZ

0

25

-

0

t_OHZ

0

t_OH

10

173

SRAM

SRAM_Type01_02A0 June 15, 2004

P r e l i m i n a r y

Speed Bins

70ns

Parameter List

Write cycle time

Symbol

t_WC

t_CW

t_AS

Min

Max

Units

ns

70

60

0

-

Chip select to end of write

Address set-up time

-

Address valid to end of write

LB#, UB# valid to end of write

Write pulse width

t_AW

60

50

0

-

t_BW

t_WP

-

Write recovery time

t_WR

t_WHZ

t_DW

t_DH

-

Write to output high-Z

Data to write time overlap

Data hold from write time

End write to output low-Z

0

20

-

30

0

-

t_OW

5

-

Data Retention Characteristics (4M Version F)

Item

Symbol

Test Condition

Min

Typ

Max Unit

V_CCfor data retention

V_DR

CS1#

≥

V_CC-0.2V (Note 1), V_IN0V. BYTE# = V_SSor V_CC1.5

≥

-

3.3

10

V

1.0

(Note 2)

Data retention current

I_DR

V_CC=3.0V, CS1#

≥

V_CC-0.2V (Note 1), V_IN

≥

0V

-

µA

Data retention set-up time

Recovery time

t_SDR

t_RDR

0

-

See data retention waveform

ns

t_RC

Notes:

1. CS1 controlled:CS1#≥ V_CC-0.2V. CS2 controlled: CS2 ≤ 0.2V.

2. Typical values are not 100% tested.

June 15, 2004 SRAM_Type01_02A0

SRAM

174

P r e l i m i n a r y

Data Retention Characteristics (4M Version G)

Item

Symbol

V_DR

Test Condition

V_CC-0.2V (Note 1), V_IN0V. BYTE# = V_SSor V_CC1.5

V_CC=1.5V, CS1# V_CC-0.2V (Note 1), V_IN

Min

Typ

Max Unit

V_CCfor data retention

Data retention current

Data retention set-up time

Recovery time

CS1#

≥

-

3.3

3

V

I_DR

≥

0V

-

0

µA

t_SDR

t_RDR

-

See data retention waveform

ns

t_RC

-

Notes:

1. CS1 controlled:CS1#≥ V_CC-0.2V. CS2 controlled: CS2 ≤ 0.2V.

Data Retention Characteristics (8M Version C)

Item

Symbol

V_DR

Test Condition

V_CC-0.2V (Note 1). BYTE# = V_SSor V_CC

V_CC=3.0V, CS1# V_CC-0.2V (Note 1)

Min

1.5

-

Typ

Max Unit

V_CCfor data retention

Data retention current

Data retention set-up time

Recovery time

CS1#

≥

-

3.3

15

-

V

I_DR

≥

µA

t_SDR

t_RDR

0

See data retention waveform

ns

t_RC

-

Notes:

1. CS1 controlled:CS1#≥ V_CC-0.2V. CS2 controlled: CS2 ≤ 0.2V.

Data Retention Characteristics (8M Version D)

Item

Symbol

V_DR

Test Condition

Min

1.5

-

Typ

Max Unit

V_CCfor data retention

Data retention current

Data retention set-up time

Recovery time

CS1#

≥

V_CC-0.2V (Note 1), BYTE# = V_SSor V_CC

-

3.3

TBD

-

V

I_DR

V_CC=3.0V, CS1#

≥

V_CC-0.2V (Note 1)

µA

t_SDR

t_RDR

0

See data retention waveform

ns

t_RC

-

Notes:

1. CS1 controlled:CS1#≥ V_CC-0.2V. CS2 controlled: CS2 ≤ 0.2V.

Timing Diagrams

tRC

Address

tAA

tOH

Data Out

Previous Data Valid

Data Valid

Figure 73. Timing Waveform of Read Cycle(1) (Address Controlled, CS#1=OE#=V , CS2=WE#=V , UB#

IL

IH

and/or LB#=V )

IL

175

SRAM

SRAM_Type01_02A0 June 15, 2004

P r e l i m i n a r y

tRC

Address

tOH

tAA

t

CO1

CS1#

CS2

tCO2

tHZ

tBA

UB#, LB#

tBHZ

tOE

OE#

t

t ^OLZ

tOHZ

tL^BZ^LZ

Data out

High-Z

Data Valid

Notes:

1. t_HZand t_OHZare defined as the time at which the outputs achieve the open circuit conditions and are not referenced to

output voltage levels.

2. At any given temperature and voltage condition, t_HZ(Max.) is less than t_LZ(Min.) both for a given device and from

device to device interconnection.

Figure 74. Timing Waveform of Read Cycle(2) (WE#=V , if BYTE# is Low, Ignore UB#/LB# Timing)

IH

tWC

Address

tCW(2)

tWR(4)

CS1#

tAW

CS2

tCW(2)

tBW

UB#, LB#

tWP(1)

WE#

tAS(3)

tDW

Data Valid

tDH

High-Z

Data in

tWHZ

tOW

Data out

Data Undefined

Figure 75. Timing Waveform of Write Cycle(1) (WE# controlled, if BYTE# is Low, Ignore UB#/LB# Timing)

June 15, 2004 SRAM_Type01_02A0

SRAM

176

P r e l i m i n a r y

tWC

Address

CS1#

tAS(3)

tCW(2)

tWR(4)

tAW

CS2

UB#, LB#

WE#

tBW

tWP(1)

tDW

tDH

Data Valid

Data in

Data out

High-Z

Figure 76. Timing Waveform of Write Cycle(2) (CS# controlled, if BYTE# is Low, Ignore UB#/LB# Timing)

tWC

Address

tCW(2)

tWR(4)

CS1#

tAW

CS2

tCW(2)

tBW

UB#, LB#

tAS(3)

tWP(1)

WE#

tDH

tDW

Data Valid

Data in

Data out

High-Z

Notes:

1. A write occurs during the overlap (t_WP) of low CS1# and low WE#. A write begins when CS1# goes low and WE#

goes low with asserting UB# or LB# for single byte operation or simultaneously asserting UB# and LB# for double

byte operation. A write ends at the earliest transition when CS1# goes high and WE# goes high. The t_WPis

measured from the beginning of write to the end of write.

2. t_CWis measured from the CS1# going low to the end of write.

3. t_ASis measured from the address valid to the beginning of write.

4. t_WRis measured from the end of write to the address change. t_WRapplied in case a write ends as CS1# or WE#

going high.

Figure 77. Timing Waveform of Write Cycle(3) (UB#, LB# controlled)

177

SRAM

SRAM_Type01_02A0 June 15, 2004

P r e l i m i n a r y

CS1# Controlled

Data Retention Mode

tSDR

tRDR

V

CC

2.7V

2.2V

V

DR

CS1# V

CC

- 0.2V

CS1#

GND

CS2 Controlled

Data Retention Mode

V

CC

2.7V

CS2

tSDR

t

RDR

V

DR

CS2 0.2V

0.4V

GND

Figure 78. Data Retention Waveform

June 15, 2004 SRAM_Type01_02A0

SRAM

178

A d v a n c e I n f o r m a t i o n

Revision Summary

Revision A (May 3, 2004)

Initial release.

Revision A + 1 (May 6, 2004)

MCP Features

Corrected the high performance access times.

Connection Diagrams

Added reference points on all diagrams.

Ordering Information

Corrected package types.

Corrected the description of product family to Page Mode Flash memory.

pSRAM Type 1

Corrected the description of the 8Mb device to 512Kb Word x 16-bit.

pSRAM Type 6

Corrected the description of the 2Mb device to 128Kb Word x 16-bit.

Corrected the description of the 4Mb device to 256Kb Word x 16-bit.

Revision A + 2 (May 11, 2004)

General Description

Corrected the tables to reflect accurate device configurations.

Revision A + 3 (June 16, 2004)

Ordering Information

Corrected the Valid Combinations tables to reflect accurate device configurations.

SRAM

New section added.

The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary

industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that

includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal

injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control,

medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable ( i.e., submersible repeater and

artificial satellite). Please note that FASL will not be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned

uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by

incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other

abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under

the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior au-

thorization by the respective government entity will be required for export of those products.

Trademarks and Notice

The contents of this document are subject to change without notice. This document may contain information on a Spansion product under development by

FASL LLC. FASL LLC reserves the right to change or discontinue work on any product without notice. The information in this document is provided ìas isî

without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of

third-party rights, or any other warranty, express, implied, or statutory. FASL LLC assumes no liability for any damages of any kind arising out of the use of

the information in this document.

LLC. Other company and product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

June 16, 2004 S71PL254/127/064/032J_00A3

Revision Summary

180


型号：	S71PL127JB0BFW9Z
厂家：	SPANSION
描述：	Memory Circuit, 8MX16, CMOS, PBGA64, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64
文件：	总177页 (文件大小：5192K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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