P2600RC [SPSEMI]
P thyristor for circuit protection;
| 型号： | P2600RC |
| 厂家： | 
StarHope |
| 描述： | P thyristor for circuit protection |
| 文件： | 总3页 (文件大小：741K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Thyristor/SMA Series
Description of Part Number
P thyristor for circuit protection
Part Number
Code
P
030
②
0
R
B
①
③
④
⑤
Main
Suffix
① PRODUCT TYPE
Product type
P
TYPE
② MEDIAN VOLTAGE RATING
Code
030
Median voltage rating
30 V
③ CONSTRUCTION VARIABLE
Code
Product shape
One chip
Unidirectional part
Two chips
0
1
2
3
Three chips
④ PACKAGE TYPE
Code
PACKAGE TYPE
TO–92
SMB/DO–214AA
SMA/DO-214AC
DO-15
E
S
R
L
M
DO-27
⑤ IPP RATING
Code
IPP RATING
150 A (8x20 µs)
250 A (8x20 µs)
400 A (8x20 µs)
1000 A (8x20 µs)
A
B
C
D
Applications
When protecting telecommunication circuits, P devices are connected across Tip and Ring for metallic protection
and across Tip and Ground and Ring and Ground for longitudinal protection. They typically are placed behind some
type of current-limiting device. Common applications include:
• Central office line cards (SLICs)
• T-1/E-1, ISDN, and xDSL transmission equipment
• Customer Premises Equipment (CPE) such as phones, modems, and caller ID adjunct boxes
• PBXs, KSUs, and other switches
• Primary protection including main distribution frames, five-pin modules, building entrance equipment, and station
protection modules
• Data lines and security systems
• CATV line amplifiers and power inserters
• Sprinkler systems
REV.2014.05.01
01 | www.spsemi.cn
Thyristor/SMA Series
P Device （R series）
DO-214AC P solid state protection devices protect telecommunications equipment such as
modems, line cards, fax machines, and other CPE.
P devices are used to enable equipment to meet various regulatory requirements including
GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).
Electrical Parameters
Part
Number *
VRM
Volts
VS
Volts
VT
Volts
IDRM
µAmps
IS
mAmps
IT
Amps **
IH
mAmps
CO
pF
P0080R_
P0300R_
P0640R_
P0720R_
P0900R_
P2300R_
P2600R_
P3100R_
P3500R_
6
25
40
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
800
800
800
800
800
800
800
800
800
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
50
150
150
150
150
150
150
150
150
50-125
70-175
55-140
55-140
55-140
45-115
40-100
35-90
25
58
77
65
88
75
98
190
220
275
320
260
300
350
400
30-75
* For individual “RA”, “RB”, and “RC” surge ratings, see table below
Surge Ratings
IPP
2x10 µs
Amps
IPP
8x20 µs
Amps
IPP
10x160 µs
Amps
IPP
10x560 µs
Amps
IPP
10x1000 µs
Amps
ITSM
60 Hz
Amps
di/dt
Amps/µs
Series
A
B
C
150
250
500
150
250
400
90
50
45
80
20
30
50
500
500
500
150
200
100
150
100
Thermal Considerations
Package
DO-214AC
Symbol
Parameter
Value
Unit
°C
Operating Junction
Temperature
Storage
TJ
-40 to +150
-65 to +150
TS
°C
Temperature Range
Thermal
Resistance:
Junction to Ambient
RBJA
90
°C/W
DO-214AC (SMA)
0.012 (0.305)
0.006 (0.152)
0.098 (2.5)
0.079 (2.0)
0.112 (2.85)
0.094 (2.40)
0.065 (1.65)
0.049 (1.25)
0.008 (0.203) MAX.
0.060 (1.55)
0.030 (0.76)
0.208 (5.28)
0.185 (4.70)
0.185 (4.70)
0.157 (3.99)
Dimensions in inches and(millimeters)
REV.2014.05.01
02 | www.spsemi.cn
Thyristor/SMA Series
The Basic Characteristic of the P
The principle introduction
Operation
In the standby mode, P devices exhibit a high off-state impedance, eliminating excessive leakage currents
and appearing transparent to the circuits they protect. Upon application of a voltage exceeding the switching
voltage (VS), P devices crowbar and simulate a short circuit condition until the current flowing through the
device is either interrupted or drops below the P device’s holding current (I H). Once this occurs, P devices
reset and return to their high off-state impedance.
Figure1 V-I Characteristics
Figure2 tr x td Pulse Wave-form
Figure4
Figure3
Normalized DC Holding Current
Normalized VS Change versus Junction Temperature
REV.2014.05.01
03 | www.spsemi.cn
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