P2600S [TECCOR]

SIDACtor Device; 设备的SIDACtor
P2600S
型号: P2600S
厂家: TECCOR ELECTRONICS    TECCOR ELECTRONICS
描述:

SIDACtor Device
设备的SIDACtor

双向触发二极管
文件: 总2页 (文件大小:426K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SIDACtor Device  
SIDACtor Device  
DO-214AA SIDACtor solid state protection devices protect telecommunications equipment  
such as modems, line cards, fax machines, and other CPE.  
SIDACtor devices are used to enable equipment to meet various regulatory requirements  
including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968  
(formerly known as FCC Part 68).  
Electrical Parameters  
Part  
VDRM  
VS  
VT  
IDRM  
IS  
IT  
IH  
CO  
pF  
Number *  
Volts  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P0080S_  
P0300S_  
P0640S_  
P0720S_  
P0900S_  
P1100S_  
P1300S_  
P1500S_  
P1800S_  
P2300S_  
P2600S_  
P3100S_  
P3500S_  
6
25  
58  
65  
75  
90  
120  
140  
170  
190  
220  
275  
320  
25  
40  
77  
88  
98  
130  
160  
180  
220  
260  
300  
350  
400  
4
4
4
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
5
5
5
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
50  
50  
100  
110  
50  
50  
50  
40  
40  
40  
30  
30  
30  
30  
30  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
* For individual “SA”, “SB”, and “SC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.  
I
PP is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
DRM is measured at IDRM.  
VS is measured at 100 V/µs.  
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.  
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for “SA” and “SB” product. “SC” capacitance is  
approximately 2x the listed value. The off-state capacitance of the P0080SB is equal to the “SC” device.  
Surge Ratings  
IPP  
IPP  
IPP  
IPP  
IPP  
ITSM  
60 Hz  
Amps  
2x10 µs  
Amps  
8x20 µs  
Amps  
10x160 µs  
Amps  
10x560 µs  
Amps  
10x1000 µs  
Amps  
di/dt  
Series  
Amps/µs  
A
B
C
150  
250  
500  
150  
250  
400  
90  
150  
200  
50  
100  
150  
45  
80  
100  
20  
30  
50  
500  
500  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 4  
© 2002 Teccor Electronics  
®
SIDACtor Data Book and Design Guide  
SIDACtor Device  
Thermal Considerations  
Package  
DO-214AA  
Symbol  
TJ  
TS  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
90  
Unit  
°C  
°C  
RJA  
Thermal Resistance: Junction to Ambient  
°C/W  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S
I
Waveform = tr x td  
H
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t – Time (µs)  
-I  
V-I Characteristics  
tr x td Pulse Wave-form  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6
4
25 °C  
25 °C  
2
0
-4  
-6  
-8  
0.4  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – °C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – °C  
Normalized VS Change versus Junction Temperature  
Normalized DC Holding Current versus Case Temperature  
© 2002 Teccor Electronics  
2 - 5  
http://www.teccor.com  
+1 972-580-7777  
®
SIDACtor Data Book and Design Guide  

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