MBR2560CT [SSC]

25A Dual Schottky Rectifiers; 25A双肖特基整流器
MBR2560CT
型号: MBR2560CT
厂家: SILICON STANDARD CORP.    SILICON STANDARD CORP.
描述:

25A Dual Schottky Rectifiers
25A双肖特基整流器

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MBR/B25xxCT Series  
25A Dual Schottky Rectifiers  
PRODUCT SUMMARY  
Voltage ratings available from 35 to 60 Volts  
FEATURES  
Plastic packages have Underwriters Laboratory Flammability  
Classification 94V-0  
Dual rectifier construction, positive center tap  
Metal-silicon junction, majority carrier conduction  
Low power loss, high efficiency  
Guard-ring for overvoltage protection  
For use in low voltage, high frequency inverters, free wheeling,  
and polarity protection applications  
MECHANICAL DATA  
High temperature soldering guaranteed:  
250°C for 10 seconds, 0.25" (6.35mm) from case  
Case: JEDEC TO-220AB (MBR...) or ITO-220AB (MBRB...) molded plastic body - for dimensions, see page 3  
Terminals: Matte-Sn plated leads, solderable per MIL-STD-750, method 2026  
Polarity: As marked  
Mounting Position: Any  
Mounting Torque: 10 in-lbs maximum  
Weight: 0.08 ounce, 2.24 grams  
Pb-free; RoHS-compliant  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR2535CT MBR2545CT MBR2550CT MBR2560CT  
MBRB2535CT MBRB2545CT MBRB2550CT MBRB2560CT  
Parameter  
Symbol  
Units  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
Volts  
Volts  
Volts  
Maximum DC blocking voltage  
Maximum average forward  
rectified current at TC=130°C  
Total device  
Per leg  
25  
12.5  
IF(AV)  
IFRM  
IFSM  
Amps  
Amps  
Amps  
Peak repetitive forward current per leg at (rated VR, sq.  
30  
wave 20kHz) at TC=130oC  
Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method) per leg  
150  
Peak repetitive reverse surge current per leg at tp =  
IRRM  
1.0  
0.5  
Amps  
2.0 su,  
1KHz  
Voltage rate of change (rated VR)  
dv/dt  
10,000  
V/ us  
Maximum instantaneous forward voltage per leg (Note 1)  
at I F=12.5A, T =25°C  
-
0.75  
c
at IF=12.5A, T =125°C  
VF  
-
0.65  
Volt  
c
at I F=25A, T =25° C  
0.82  
0.73  
-
-
c
at IF=25A, T =125°C  
c
Maximum reverse current at  
rated DC blocking voltage  
per leg (Note 1)  
TC=25oC  
0.2  
40  
1.0  
50  
mA  
IR  
TC=125o C  
Thermal resistance from junction to case per leg  
Rθ  
1.5  
°C/W  
JC  
Operating junction temperature range  
Storage temperature range  
TJ  
-55 to +150  
-55 to +150  
oC  
oC  
TSTG  
Notes:  
1. Pulse test: 300us pulse width, 1% duty cycle  
12/03/2006 Rev.4.01  
www.SiliconStandard.com  
1 of 3  
MBR/B25xxCT Series  
RATINGS AND CHARACTERISTIC CURVES  
(TA = 25°C unless otherwise noted )  
12/03/2006 Rev.4.01  
www.SiliconStandard.com  
2 of 3  
MBR/B25xxCT Series  
PHYSICAL DIMENSIONS  
ITO-220AB  
TO-220AB  
Dimensions in inches and (millimeters)  
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no  
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no  
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its  
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including  
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to  
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of  
Silicon Standard Corporation or any third parties.  
12/03/2006 Rev.4.01  
www.SiliconStandard.com  
3 of 3  

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