SSM20N03P [SSC]
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET; N沟道增强模式功率MOSFET
| 型号： | SSM20N03P |
| 厂家： | 
SILICON STANDARD CORP. |
| 描述： | N-CHANNEL ENHANCEMENT-MODE POWER MOSFET |
| 文件： | 总6页 (文件大小：443K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM20N03S,P
N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
Dynamic dv/dt rating
Repetitive-avalanche rated
Fast switching
BVDSS
RDS(ON)
ID
30V
52mΩ
20A
D
S
G
Simple drive requirement
Description
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
G
D
S
TO-263
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial and
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(SSM20N03P) is available for low-footprint applications.
G
TO-220
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
± 20
20
Continuous Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=100℃
IDM
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
13
A
58
31
A
PD@TC=25℃
Total Power Dissipation
W
Linear Derating Factor
0.25
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
4.0
Unit
℃/W
℃/W
Rthj-case
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-amb
62
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SSM20N03S,P
Electrical Characteristics @ T=25oC (unless otherwise specified)
j
Symbol
BVDSS
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Test Conditions
Min. Typ. Max. Units
VGS=0V, ID=250uA
30
-
-
0.037
-
-
-
V
ΔBVDSS/ΔTj
V/℃
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=10A
-
52
VGS=4.5V, ID=8A
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
85
3
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
3
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
j
-
1
Drain-Source Leakage Current (T=150oC)
-
100
j
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=
-
± 20V
±100
ID=10A
6.1
1.4
4
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
VDS=24V
VGS=5V
VDS=15V
ID=20A
4.9
29
14.3
3.6
290
160
45
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.75Ω
VGS=0V
-
-
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
A
A
V
IS
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )1
Forward On Voltage2
VD=VG=0V , VS=1.3V
-
-
-
-
-
-
20
58
ISM
VSD
Tj=25℃, IS=20A, VGS=0V
1.3
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Rev.2.01 6/26/2003
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SSM20N03S,P
50
40
30
20
10
0
70
60
50
40
30
20
10
0
T C =150 o C
T C =25 o C
V G =10V
G =8.0V
V
G =10V
V
V G =8.0V
V G =6.0V
V G =6.0V
V
V
G =4.0V
G =3.0V
V G =4.0V
V G =3.0V
8
0
1
2
3
4
5
6
7
9
0
1
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
85
80
75
70
65
60
55
50
45
40
35
1.80
1.60
1.40
1.20
1.00
0.80
0.60
I D =10A
V G =10V
I
D =10A
T C =25 o C
Ω
Ω
Ω
Ω
-50
0
50
100
150
3
4
5
6
7
8
9
10
11
T j , Junction Temperature ( o C)
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Rev.2.01 6/26/2003
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SSM20N03S,P
25
20
15
10
5
40
30
20
10
0
0
25
50
75
100
125
150
0
50
100
150
T c , Case Temperature ( o C)
T c ,Case Temperature( o C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
10
100
10
1
10us
1
DUTY=0.5
100us
0.2
0.1
PDM
0.1
t
SINGLE PULSE
1ms
0.05
T
0.02
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
10ms
D=0.01 T c =25 o C
100ms
0.01
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Rev.2.01 6/26/2003
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SSM20N03S,P
f=1.0MHz
1000
100
10
12
10
8
Id=10A
V D =16V
V D =20V
V D =24V
Ciss
Coss
6
Crss
4
2
0
0
2
4
6
8
10
12
1
6
11
16
21
26
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3
2
1
0
100
10
T j = 150 o C
T j = 25 o C
1
0.1
0.01
-50
0
50
100
150
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
T j , Junction Temperature( o C)
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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SSM20N03S,P
VDS
RD
90%
VDS
TO THE
OSCILLOSCOPE
D
S
0.5x RATED VDS
RG
G
10%
VGS
+
-
10V
VGS
tr
td(off)
td(on)
tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
S
5V
0.8 x RATED VDS
QGD
G
QGS
VGS
+
1~ 3 mA
IG
-
ID
Q
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.01 6/26/2003
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