SSM9987GH [SSC]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | SSM9987GH |
| 厂家： | 
SILICON STANDARD CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总5页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM9987GH
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
BVDSS
RDS(ON)
ID
80V
90mΩ
15A
D
S
Low Gate Charge
Single Drive Requirement
Fast Switching Performance
G
DESCRIPTION
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(SSM9987GH) are available for low-profile aplications.
G
D
S
TO-251(J)
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Drain-Source Voltage
Rating
Units
VDS
VGS
80
±25
V
V
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
15
A
9
A
50
A
PD@TC=25℃
Total Power Dissipation
34.7
W
Linear Derating Factor
0.28
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
THERMAL DATA
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
3.6
110
02/27/2008 Rev.1.00
www.SiliconStandard.com
1
SSM9987GH
ELECTRICAL CHARACTERISTICS
(TJ=25oC unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
80
-
-
0.09
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=10A
VGS=4.5V, ID=7A
V/℃
mΩ
RDS(ON)
-
90
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
105 mΩ
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=5V, ID=10A
VDS=80V, VGS=0V
VDS=64V ,VGS=0V
VGS=±25V
3
V
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
15
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
j
Drain-Source Leakage Current (T=150oC)
-
100
j
IGSS
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
±100
Qg
ID=10A
11
3
18
-
Qgs
Qgd
td(on)
tr
VDS=64V
VGS=4.5V
6
-
VDS=40V
8
-
ID=10A
12
19
3
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=4Ω
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
980 1570
VDS=25V
75
50
-
-
f=1.0MHz
f=1.0MHz
1.1
1.7
SOURCE-DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=10A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
33
44
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
02/27/2008 Rev.1.00
www.SiliconStandard.com
2
SSM9987GH
30
20
10
0
30
20
10
0
10V
7 .0V
5.0V
4.5V
T C =25 o C
T C =150 o C
10V
7 .0V
5.0V
4.5V
V
G =3.0V
V
G =3.0V
0
3
6
9
12
0
3
6
9
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
180
140
100
60
1.9
1.6
1.3
1.0
0.7
0.4
I D = 7 A
T C =25 o C
I D = 10 A
V G =10V
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.6
1.2
0.8
0.4
8
T j =150 o C
T j =25 o C
6
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
02/27/2008 Rev.1.00
www.SiliconStandard.com
3
SSM9987GH
f=1.0MHz
16
12
8
10000
1000
100
I D = 10 A
C iss
V
V
V
DS = 4 0V
DS = 50 V
DS = 64 V
C oss
C rss
4
10
0
1
5
9
13
17
21
25
29
0
5
10
15
20
25
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100.0
Duty factor=0.5
0.2
0.1
10.0
100us
1ms
0.1
0.05
PDM
0.02
1.0
t
T
10ms
0.01
100ms
DC
C =25 o C
Duty factor = t/T
T
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.1
0.01
0.00001
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
V DS =5V
QG
20
10
0
4.5V
T j =25 o C
T j =150 o C
QGD
QGS
Q
Charge
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
02/27/2008 Rev.1.00
Fig 12. Gate Charge Waveform
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4
SSM9987GH
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
02/27/2008 Rev.1.00
www.SiliconStandard.com
5
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