1N8018TX [SSDI]

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-35, HERMETIC SEALED, CERAMIC GLASS PACKAGE-2;


型号：	1N8018TX
厂家：	SOLID STATES DEVICES, INC
描述：	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-35, HERMETIC SEALED, CERAMIC GLASS PACKAGE-2 二极管
文件：	总4页 (文件大小：528K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1N8018 - 1N8020 Series

1N8020

Axial Leaded

1N8020SMS

Surface Mount

Square Tab

A Novel 1 amp Void Free Glass Ceramic Nanosize Package

9 nsec Hyper Fast Soft Recovery Nanospeed Rectiﬁer

SSDI announces our 9 nsec hyper fast rectiﬁers, the 1N8018 -1N8020 se-

ries. The 1N8020 is a void free glass ceramic encapsulated rectiﬁer that

provides a more rugged, high reliability replacement for a 1N6642 and a

smaller, faster replacement for the 1N5806.

Features

▪▪ Hyper fast recovery time

1N6642

1N8020

1.0 A

1N5806

@25°C

I_O

0.3 A

2.5 A

(soft recovery / low EMI): 9 nsec max

@ 8.3mS, 25°C

@.375”, 25°C

▪▪ Low reverse leakage current

▪▪ Low forward voltage drop

▪▪ Hermetically sealed in a glass ceramic void

free construction in a DO-35 package

envelope

I_FSM

R_θJL

R_θJE

B_VR

I_R

2.5 A

20 A

35 A

150°C/W

80°C/W

36°C/W

@25°C

40°C/W

20°C/W

13°C/W

@100µA, 25°C

@20V, 25°C

100 V min

160 V min

50 nA max

75 nA max

150 nA max

0.575 V max

0.7 V max

0.8 V max

0.85 V max

0.90 V max

0.975 V max

50 µA max

75 µA max

150 µA max

0.5 V max

0.62 V max

0.81 V max

0.92 V max

160 V min

25 nA max

▪▪ High temperature metallurgical category

@75V, 25°C

I_R

500 nA max

I bond

@VR=max rated, 25°C

@1mA, 25°C

I_R

1.0 µA max

▪▪ Solid silver leads (copper leads also

V_F

I_R

available)

@10mA, 25°C

@100mA, 25°C

@200mA, 25°C

@500mA, 25°C

@1.0A, 25°C

0.8 V max

▪▪ Excellent liquid-to-liquid thermal shock

1.00 V max

performance

▪▪ Designed for high efﬁciency applications

▪▪ Radiation tolerant

▪▪ Avalanche breakdown

▪▪ Replacement for 1N6638, 1N6642 and

0.875 V max

@20V, 150°C

50 µA max

1N5806

@75V, 150°C

I_R

100 µA max

▪▪ Available in axial leaded and surface mount

square tab versions

▪▪ Available in single phase, three phase and

diode array conﬁgurations

▪▪ TX, TXV, and S-level screening available

▪▪ Samples available on request

@VR=max rated, 150°C

@10mA, 150°C

@100ma, 150°C

@10mA, -55°C

@100mA, -55°C

I_R

175 µA @ 125°C

V_F

0.8 V max

1.2 V max

Solid State Devices, Inc. ▪ 14701 Firestone Blvd. La Mirada, CA 90638 ▪ (562) 404-4474 ▪ FAX (562) 404-1773 ▪ www.ssdi-power.com

1N8018 - 1N8020 Series

CASE OUTLINES

ØA

ØC

AXIAL

DIM

MIN

.056”

.125”

.018”

1.00”

MAX

.075”

.140”

.022”

1.50”

SMS

MIN

DIM

MAX

.085”

.200”

.028”

.070”

.168”

.019”

.001”

Solid State Devices, Inc. ▪ 14701 Firestone Blvd. La Mirada, CA 90638 ▪ (562) 404-4474 ▪ FAX (562) 404-1773 ▪ www.ssdi-power.com

1N8018 thru 1N8020

SERIES

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

1 AMP

100 – 200 VOLTS

9 nsec

Designer’s Data Sheet

Part Number/Ordering Information ^1/

HYPER FAST

SOFT RECOVERY RECTIFIER

__ __ __

1N80

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV

│

└

│

└

FEATURES:



Hyper Fast Reverse Recovery Time 9 ns Max

Low Forward Voltage Drop

Low Reverse Leakage Current

Avalanche Breakdown

Void Free Glass Ceramic Chip Construction

Hermetically Sealed

S = S Level

Package Type

__ = Axial Leaded

SMS = Surface Mount Square Tab

Device Type ( VRWM )

18 = 100 V

Solid Silver Lead

Excellent liquid-to-liquid thermal shock performance

Available in Axial & Square Tab Versions

For High Efficiency Applications

19 = 150 V

20 = 200 V

TX, TXV, and S-Level Screening Available^2/

Replacement for 1N6638, 1N6642 and 1N5806

Previous part numbers: SHF1100, SHF1150, and SHF1200

High Temperature Metallurgical Class I Bond

MAXIMUM RATINGS ^3/

RATING

SYMBOL

VALUE

UNIT

1N8018

1N8019

1N8020

100

150

200

Peak Repetitive Reverse Voltage

DC Blocking Voltage

V_RWM

V_R

Volts

Average Rectified Forward Current

(Resistive Load, 60 Hz, Sine Wave, T_C= 25°C)

I_O

Amp

Peak Surge Current

I_FSM

Amps

°C

(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach

equilibrium between pulses, T_C= 25°C)

-65 to +175

Operating & Storage Temperature

T_OPand T_STG

Thermal Resistance

SMS- Junction to End Tab

Axial- Junction to Lead @ .375”

R_θJE

R_θJL

°C/W

Axial Leaded

SMS

NOTES:

1/ For Ordering Information, Price, and Availability- Contact Factory.

2/ Screening Based on MIL-PRF-19500. Screening Flows Available on

Request.

3/ Unless Otherwise Specified, All Electrical Characteristics @25°C.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0158C

DOC

1N8018 thru 1N8020

SERIES

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

ELECTRICAL CHARACTERISTICS

CHARACTERISTICS

SYMBOL

LIMIT

UNIT

@ I_F= 1mA

@ I_F= 10mA

@ I_F= 100mA

@ I_F= 200mA

@ I_F= 500mA

@ I_F= 1A

V_F1

V_F2

V_F3

V_F4

V_F5

V_F6

0.575

0.700

0.800

0.850

0.900

0.975

Maximum Instantaneous Forward Voltage Drop

(Pulsed, T_A= 25°C)

Vdc

Maximum Instantaneous Forward Voltage Drop

(Pulsed, T_A= 150°C)

@ I_F= 10mA

@ I_F= 100mA

V_F7

V_F8

0.5

0.62

Vdc

Maximum Instantaneous Forward Voltage Drop

(Pulsed, T_A= -55°C)

@ I_F= 10mA

@ I_F= 100mA

V_F9

V_F10

0.81

0.92

1N8018

1N8019

1N8020

100

150

200

Minimum Breakdown Voltage

I_R= 100 μA

BV_R

Vdc

@ V_R= 20V

@ V_R= 75V

@ V_R= max rated

I_R1

I_R2

I_R3

150

Maximum Reverse Leakage Current

(300 μs Pulse Minimum , T_A= 25°C)

@ V_R= 20V

@ V_R= 75V

@ V_R= max rated

I_R4

I_R5

I_R6

150

Maximum Reverse Leakage Current

(300 μs Pulse Minimum , T_A= 150°C)

µA

Maximum Junction Capacitance

(T_A= 25°C , f = 1MHz) V_R= 0V

C_J1

Maximum Junction Capacitance

(T_A= 25°C , f = 1MHz) V_R= 1.5V

C_J2

C_J3

t_rr

Maximum Junction Capacitance

(T_A= 25°C , f = 1MHz) V_R= 10V

Maximum Reverse Recovery Time

(I_F= 50 mA, I_R= 100 mA, I_RR= 25 mA)

nsec

Maximum Forward Recovery Time

(I_F= 50 mA)

t_fr

SMS

AXIAL

DIM

MIN

MAX

.085”

.200”

.028”

DIM

MIN

MAX

.075”

.140”

.022”

1.50”

.070”

.168”

.019”

.001”

.056”

.125”

.018”

1.00”

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0158C

DOC

1N8018TX [SSDI]

相关型号：

1N8018TXV

1N8019

1N8019S

1N8019SMS

1N8019SMSS

1N8019SMSTX

1N8019SMSTXV

1N8019TX

1N8019TXV

1N8020

1N8020SMSS

1N8020SMSTX