F00165H_15 [SSDI]
Avalanche Rated N-channel MOSFET;
| 型号： | F00165H_15 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Avalanche Rated N-channel MOSFET |
| 文件： | 总2页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF27N50M
SFF27N50Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
27 AMP , 500 Volts, 175 mΩ
Avalanche Rated N-channel
MOSFET
SFF27N50 ___ ___ ___
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Features:
Rugged poly-Si gate
Lead Option 3/
__ = Straight Leads
DB = Down Bend
UB = Up Bend
Lowest ON-resistance in the industry
Avalanche rated
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
TX, TXV, S-Level screening available
Improved (RDS(ON) QG) figure of merit
Package 3/ 4/
M = TO-254
Z = TO-254Z
Maximum Ratings
Symbol
VDSS
Value
Units
V
Drain - Source Voltage
Gate – Source Voltage
500
±20
±30
continuous
transient
VGS
ID1
V
A
Max. Continuous Drain Current (package
limited)
27
@ TC = 25ºC
@ TC = 25ºC
@ TC = 125ºC
ID2
ID3
27
18
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
A
A
@ L= 0.1 mH
@ L= 0.1 mH
@ TC = 25ºC
IAR
35
EAS
EAR
1500
50
Single and Repetitive Avalanche Energy
mJ
Total Power Dissipation
100
W
PD
Operating & Storage Temperature
-55 to +150
ºC
T
OP & TSTG
Maximum Thermal Resistance
(Junction to Case)
1.0
(typ.0.75)
RθJC
ºC /W
NOTES:
TO-254
TO-254Z
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available
on request.
3/ For package outlines / lead bending options / pinout
configurations - contact factory.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics @25oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00165H
DOC
SFF27N50M
SFF27N50Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 5/
Symbol Min
Typ Max Units
Drain to Source Breakdown Voltage
V
GS = 0V, ID = 250μA
BVDSS
RDS(on)
500
510
––
V
––
––
––
Drain to Source On State
Resistance
V
GS = 10V, ID = 18A, Tj= 25oC
150
400
175
––
mΩ
VGS = 10V, ID = 18A, Tj=125oC
V
DS = VGS, ID = 4.0mA, Tj= 25oC
VDS = VGS, ID = 4.0mA, Tj= 125oC
3.0
2.0
––
4.0
3.0
5.0
5.0
––
6
Gate Threshold Voltage
Gate to Source Leakage
VGS(th)
V
V
DS = VGS, ID = 4.0mA, Tj= -55oC
VGS = ±20V, Tj= 25oC
––
––
10
30
±100
––
IGSS
IDSS
gfs
nA
VGS = ±20V, Tj= 125oC
VDS = 500V, VGS = 0V, Tj = 25oC
VDS = 500V, VGS = 0V, Tj = 125oC
––
––
0.01
5.0
25
500
μA
μA
Zero Gate Voltage Drain Current
Forward Transconductance
V
DS = 20V, ID = 18A, Tj = 25oC
15
35
––
Mho
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
V
GS = 10V
Qg
Qgs
Qgd
––
––
––
75
25
25
150
––
––
VDS = 250V
nC
ID = 18A
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
V
V
GS = 10V
DS = 250V
ID = 35A
td(on)
tr
td(off)
tf
––
––
––
––
55
30
65
25
75
50
150
50
nsec
V
RG = 3.0Ω, pw= 3us
Diode Forward Voltage
IF = 35A, VGS = 0V
VSD
––
0.95
1.5
Diode Reverse Recovery Time
Diode Reverse Recovery Current
Reverse Recovery Charge
trr
IRM
Qrr
––
––
––
180
8.0
0.85
250
––
––
nsec
A
μC
IF = 25A, di/dt = 100A/usec
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
V
GS = 0V
DS = 25V
f = 1 MHz
Ciss
Coss
Crss
––
––
––
4700
540
20
––
––
––
pF
PIN ASSIGNMENT (Standard)
Available Part Numbers:
Package
TO-254 (M)
TO-254Z (Z)
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
Consult Factory
TO254 (M)
TO254Z (Z)
PIN 3
PIN 2
PIN 1
PIN 3
PIN 2
PIN 1
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00165H
DOC
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