FT0021 [SSDI]
N-Channel Trench Gate MOSFET;
| 型号： | FT0021 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | N-Channel Trench Gate MOSFET 栅 |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF75N08M
SFF75N08Z
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
55 AMP (note 1) /75 Volts
8.5 mO
TO-254 and TO-254Z
N-Channel Trench Gate MOSFET
Note 1: maximum current limited by package
configuration
Features:
·
·
·
·
·
·
·
·
·
Trench gate technology for high cell density
Lowest ON-resistance in the industry
Enhanced operating temperature range
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
Enhanced replacement for IRF7MS2907
TX, TXV, S-Level screening available
Improved (RDS(ON) QG) figure of merit
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Symbol
VDSS
Value
75
Units
V
V
±20
VGS
@ TC = 25ºC
@ TC = 125ºC
55 (note 1)
55 (note 1)
ID1
ID2
Max. Continuous Drain Current (package limited)
Max. Instantaneous Drain Current (Tj limited)
A
A
@ TC = 25ºC
@ TC = 125ºC
175
75
ID3
ID4
75
280
Max. Avalanche current
@ L= 0.1 mH
@ L= 0.1 mH
@ TC = 25ºC
IAR
EAR
A
mJ
W
ºC
Repetitive Avalanche Energy
Total Power Dissipation
210
PD
-55 to +175
Operating & Storage Temperature
TOP & TSTG
0.7
(typ 0.55)
Maximum Thermal Resistance
(Junction to Case)
ºC/W
R0JC
TO-254 (M)
TO-254Z (Z)
PIN 3
PIN 2
PIN 3
PIN 2
PIN 1
PIN 1
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0021A
DOC
SFF75N08M
SFF75N08Z
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 4/
Symbol Min Typ Max Units
Drain to Source Breakdown Voltage
VGS = 0V, ID = 250µA
75
––
––
V
BVDSS
RDS(on)
VGS = 10V, ID = 30A, Tj= 25oC
VGS = 10V, ID = 30A, Tj=125oC
VGS = 10V, ID = 30A, Tj= 175oC
––
––
––
7.5
10.0
12.5
8.5
––
––
Drain to Source On State Resistance
mO
Gate Threshold Voltage
Gate to Source Leakage
VDS = VGS, ID = 250µA
2.0
––
––
––
4.0
V
VGS(th)
IGSS
IDSS
VGS = ±20V
±100
nA
VDS = 60V, VGS = 0V, Tj = 25oC
VDS = 60V, VGS = 0V, Tj = 125oC
VDS = 60V, VGS = 0V, Tj = 200oC
1
50
10
µA
µA
mA
––
––
––
––
Zero Gate Voltage Drain Current
Forward Transconductance
VDS = 15V, ID = 30A, Tj = 25oC
25
––
––
Mho
gfs
VGS = 10V
VDS = 35V
ID = 110A
––
––
––
150
35
50
220
––
––
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Qg
Qgs
Qgd
nC
VGS = 10V
VDS = 35V
ID = 110A
RG = 2.5O
––
––
––
––
25
210
70
50
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
td(on)
tr
td(off)
tf
300
125
275
nsec
V
170
Diode Forward Voltage
IF = 110A, VGS = 0V
––
1.1
1.5
VSD
85
4.5
0.16 0.35
135
7.5
nsec
A
µC
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
trr
IRM(rec)
Qrr
IF = 100A, di/dt = 100A/usec
––
VGS = 0V
VDS = 25V
f = 1 MHz
––
––
––
8000
1000
600
––
––
––
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
pF
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25oC.
PIN ASSIGNMENT (Standard)
Available Part Numbers:
Package
TO-254 (M)
TO-254Z (Z)
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
Consult Factory
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0021A
DOC
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