RU0001J_15 [SSDI]

ULTRA FAST RECTIFIER;


型号：	RU0001J_15
厂家：	SOLID STATES DEVICES, INC
描述：	ULTRA FAST RECTIFIER
文件：	总2页 (文件大小：201K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SDR1P thru SDR1W

and

SDR1PSMS and SDR1WSMS

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

1 AMP

Designer’s Data Sheet

1300 ─ 1900 VOLTS

70 nsec ULTRA FAST RECTIFIER

Part Number/Ordering Information ^1/

SDR1 __ __ __

│

└

│

└

Screening

__ = Not Screened

TX = TX Level

TXV = TXV

FEATURES:



Ultra Fast Recovery: 70 ns Max @ 25^°C ^4/

Single Chip Construction

S = S Level

PIV to 1800 Volts

Low Reverse Leakage Current

Hermetically Sealed

Package Type

__ = Axial Leaded

SMS = Surface Mount Square Tab

For High Efficiency Applications

Available in Axial and Surface Mount Versions

Metallurgically Bonded

P = 1300 V

Family

TX, TXV, and S-Level Screening Available^2/

R = 1400 V

S = 1500 V

T = 1600 V

V = 1700 V

W = 1800 V

MAXIMUM RATINGS ^3/

RATING

SYMBOL

VALUE

UNIT

1300

1400

1500

1600

1700

1800

SDR1P and SDR1PSMS

SDR1R and SDR1RSMS

SDR1S and SDR1SSMS

SDR1T and SDR1TSMS

SDR1V and SDR1VSMS

SDR1W and SDR1WSMS

Peak Repetitive Reverse

Voltage

V_RRM

V_RWM

V_R

Volts

And

DC Blocking Voltage

Rectified Forward Forward Current

(Resistive Load, 60 Hz, Sine Wave, T_A= 25°C)

1.0

I_O

Amp

Peak Surge Current

I_FSM

Amps

(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach

equilibrium between pulses, T_A= 25°C)

-65 to +175

Operating & Storage Temperature

T_OPand T_STG

°C

Thermal Resistance, Junction to Lead, L = 3/8” (Axial)

Junction to End Tab (SMS)

R_θJL

R_θJE

°C/W

NOTES:

Axial Lead

SMS

1/ For Ordering Information, Price, and Availability- Contact Factory.

2/ Screening Based on MIL-PRF-19500. Screening Flows Available on

Request.

3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.

4/ Recovery Conditions: I_F= 0.5 Amp, I_R= 1.0 Amp, I_RRto .25 Amp.

5/ For information on operating curves, contact factory.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RU0001J

DOC

SDR1P thru SDR1W

and

SDR1PSMS and SDR1WSMS

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

ELECTRICAL CHARACTERISTICS

CHARACTERISTICS

SYMBOL VALUE UNIT

Instantaneous Forward Voltage Drop

(I_F= 1 Adc, 300- 500 μs Pulse, T_A= 25°C)

V_F1

V_F2

I_R1

I_R2

C_J

3.60

4.80

Vdc

μA

Instantaneous Forward Voltage Drop

(I_F= 1 Adc, 300- 500 μs Pulse, T_A= -55°C)

Maximum Reverse Leakage Current

(Rated V_R, 300 μs Pulse Minimum , T_A= 25°C)

Maximum Reverse Leakage Current

(Rated V_R, 300 μs Pulse Minimum , T_A= 100°C)

100

Junction Capacitance

(VR = 100Vdc, T_A= 25°C , f = 1MHz)

Maximum Reverse Recovery Time ^4/

t_rr

DIMENSIONS

DIM. MIN. MAX.

DIMENSIONS

Axial Leaded Case Outline:

Square Tab Surface Mount Case

Outline:

DIM. MIN. MAX.

.100” .150”

.125” .200”

.027” .033”

.135” .155”

.175” .250”

.022” .028”

1.00”

---

.002”

---

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RU0001J

DOC

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