RU0005H_15 [SSDI]

ULTRA FAST RECTIFIER;


型号：	RU0005H_15
厂家：	SOLID STATES DEVICES, INC
描述：	ULTRA FAST RECTIFIER
文件：	总2页 (文件大小：152K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SDR1D thru SDR1N

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

1.0 AMPS

200 ─ 1200 VOLTS

50 – 80 nsec ULTRA FAST RECTIFIER

Designer’s Data Sheet

Part Number/Ordering Information ^1/

__ __ __

SDR1

FEATURES:

Ultra Fast Recovery:

•

50-80 ns Max @ 25ºC ^4/

80-130 ns Max @ 100ºC^4/

└

│

└

│

└

Screening

__ = Not Screened

TX = TX Level

TXV = TXV

•

Single Chip Construction

PIV to 1200 Volts

Low Reverse Leakage Current

S = S Level

Hermetically Sealed

For High Efficiency Applications

Metallurgically Bonded

Package Type

__ = Axial Leaded

TX, TXV, and S-Level Screening Available^2/

Available in Surface Mount (SM) and Square Tab

Surface Mount (SMS) Versions (Ref. RU0003)

D = 200V

G = 400V

J = 600V

K = 800V

M = 1000V

N = 1200V

Family

•

Hyper Fast Version available (Ref. RH0119)

MAXIMUM RATINGS ^3/

RATING

SYMBOL

VALUE

UNIT

SDR1D

SDR1G

SDR1J

SDR1K

SDR1M

SDR1N

200

400

600

800

1000

1200

Peak Repetitive Reverse

Voltage

V_RRM

V_RWM

V_R

Volts

And

DC Blocking Voltage

Rectified Forward Forward Current

(Resistive Load, 60 Hz, Sine Wave, T_A= 25ºC)

Amp

I_O

Peak Surge Current

(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach

equilibrium between pulses, T_A= 25ºC)

Amps

I_FSM

-65 to +175

Operating & Storage Temperature

ºC

_OPand T_STG

R_θJL

Thermal Resistance, Junction to Lead, L = 3/8”

ºC/W

Axial Leaded

NOTES:

1/ For Ordering Information, Price, and Availability- Contact Factory.

2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.

3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.

4/ Recovery Conditions: I_F= 0.5 Amp, I_R= 1.0 Amp, I_RRto .25 Amp.

5/ For information on operating curves, contact factory.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RU0005H

DOC

SDR1D

thru

SDR1N

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

ELECTRICAL CHARACTERISTICS

CHARACTERISTICS

SYMBOL VALUE UNIT

Instantaneous Forward Voltage Drop

(I_F= 1Adc, 300- 500 μs Pulse, T_A= 25ºC)

SDR1D thru SDR1J

SDR1K thru SDR1N

1.70

1.90

V_F1

V_F2

I_R1

I_R2

C_J

Vdc

μA

Instantaneous Forward Voltage Drop

(I_F= 1Adc, 300- 500 μs Pulse, T_A= -55ºC)

SDR1D thru SDR1J

SDR1K thru SDR1N

2.10

2.30

Maximum Reverse Leakage Current

(Rated V_R, 300 μs Pulse Minimum , T_A= 25ºC)

Maximum Reverse Leakage Current

(Rated V_R, 300 μs Pulse Minimum , T_A= 100ºC)

500

Junction Capacitance

(V_R= 10Vdc, T_A= 25ºC , f = 1MHz)

SDR1D thru SDR1J

SDR1K

Maximum Reverse Recovery Time ^4/

t_rr

SDR1M

SDR1N

DIMENSIONS

Axial Leaded Case Outline ^5/:

DIM.

MIN.

MAX.

---

.150”

.190”

.033”

---

.027”

.95”

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RU0005H

DOC

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