SDA167HRGUFNTX [SSDI]

Bridge Rectifier Diode,;


型号：	SDA167HRGUFNTX
厂家：	SOLID STATES DEVICES, INC
描述：	Bridge Rectifier Diode,
文件：	总2页 (文件大小：105K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SDA167HC

Solid State Devices, Inc.

Series

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

33 Amp

Three Phase Bridge

SDA167H C E UF __ __ __

Screening ^2/

└

│

└

│

└

│

└

│

└

│

└

Rectifier Assembly

__ = Not Screened

TX = TX Level

TXV = TXV Level

600 – 1000 Volts

Terminal ^3/__ = Blade

Features:

T = Turret

 Up to 1000 V Blocking Voltage

 Average Output Current: 33 Amps

 Low Reverse Leakage Current

 Constructed with Void-Free, Hermetically Sealed

Discretes

 Aluminum Case for Maximum Thermal

Conductivity

 Electrically Insulated Aluminum Case

 TX & TXV Level Screening Available

 Standard and Fast Recovery Versions Available

– Consult Factory

Finish __ = Anodized Case

N = Ni Plated Case

Recovery Time

UF = Ultra Fast Recovery

Voltage

E = 600V

F = 800V

G = 1000V

Polarity

C = Normal

R = Reverse

Maximum Ratings^4/

Symbol

Value

Units

Volts

SDA167HCEUF

SDA167HCFUF

SDA167HCGUF

V_RRM

V_RWM

V_R

600

800

1000

Peak Repetitive Reverse and

DC Blocking Voltage

Average Rectified Forward Current ^{5/, 6/}

(Resistive load, 60Hz, Sine Wave, T_C= 55°C)

Peak Surge Current ^5/

(8.3 ms Pulse, Half Sine Wave, T_A= 25°C)

I_O

Amps

ºC

I_FSM

250

Operating & Storage Temperature

Maximum Junction Temperature

T_op& T_stg

T_J

-55 to +150

175

Maximum Thermal Resistance ^5/

Junction to Case

0.85

ºC/W

R_JC

Notes:

SDA167

1/ For ordering information, price, and availability, contact

Blade (_)

Turret (T)

factory.

2/ Screening flows available on request.

3/ Other termination available – contact factory.

4/ Unless otherwise specified, all maximum ratings / electrical

characteristics @25ºC.

5/ Rating applies to the total bridge.

6/ Derate linearly at 0.35A/°C for T_C> 55°C.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RA0018C

DOC

SDA167HC

Solid State Devices, Inc.

Series

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Electrical Characteristic (per leg) ^4/

Symbol

BVR

Min

Max

Units

Vdc

SDA167HCEUF

SDA167HCFUF

SDA167HCGUF

620

820

1020

Peak Reverse Voltage

(I_R= 100µA)

I_F= 3 A

I_F= 9 A

V_F1

V_F2

1.42

1.80

Instantaneous Forward Voltage Drop

Vdc

A

(300 - 500µsec pulse)

Reverse Leakage Current

(Rated V_R, 300µs pulse minimum)

I_R1

I_R2

750

Reverse Leakage Current

(Rated V_R, T_A= 100ºC, 300µs pulse minimum)

A

Reverse Recovery Time

(I_F= 0.5A, I_R= 1A, I_RR= 0.25A)

t_RR

nsec

MΩ

Isolation Resistance

(All terminals in common to case)

1500 V

100

R_ISO

CASE OUTLINE: SDA167 - Blade (_)

SDA167 - Turret (T)

Notes:

Available Part Numbers:

1/ For ordering information, price, and availability, contact factory.

2/ Screening flows available on request.

SDA167HCEUF, SDA167HCEUFT

SDA167HCFUF, SDA167HCFUFT

SDA167HCGUF, SDA167HCGUFT

SDA167HREUF, SDA167HREUFT

SDA167HRFUF, SDA167HRFUFT

SDA167HRGUF, SDA167HRGUFT