SDA669MFS [SSDI]
Bridge Rectifier Diode,;
| 型号： | SDA669MFS |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Bridge Rectifier Diode, |
| 文件： | 总2页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Fast Recovery
Solid State Devices, Inc.
SDA669 Series
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
300 nsec
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
30 AMP
600 – 1000 VOLTS
THREE PHASE BRIDGE
RECTIFIER ASSEMBLY
SDA669 __ __ _F_ __ __ __
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
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└
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Lead Bend 3/
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__ = Straight Leads
UB = Up Bend
DB = Down Bend
Features:
Up to 1000 V Blocking Voltage
Average Output Current 30 Amps
Low Reverse Leakage Current
Terminals 3/
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__ = Copper Leads
T = Turret Terminals
Constructed with Void-Free, Hermetically Sealed
Discretes
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Speed F = Fast (250 ns typ.)
Aluminum Case for Maximum Thermal Conductivity
Small Package Size (1.500” x 0.875” x 0.310”)
TX, TXV and Space Level Screening Available
2/
Voltage J = 600 V
K = 800 V
Standard, Ultra Fast, and Hyper Fast versions available -
Contact Factory
M = 1000 V
Custom Lead Bend Options Available Upon Request –
Polarity (__: standard, R: reverse)
Contact Factory3/
Maximum Ratings
Symbol
Value
Units
SDA669J
SDA669K
SDA669M
VRRM
VRSM
VR
600
800
1000
Peak Repetitive and Peak Surge Reverse Voltage
Volts
Average Rectified Forward Current 4/
(Resistive Load, 60 hz Sine Wave, TC = 55°C)
Io
30
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25°C)
IFSM
Top & Tstg
RƟJC
125
-55 to +150
2.0
Amps
ºC
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
ºC/W
1
SDA669 ( __ )
SDA669 (T)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RA0026G
DOC
Fast Recovery
Solid State Devices, Inc.
SDA669 Series
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
300 nsec
Electrical Characteristic 5/
Symbol Min
Typ
Max
Units
Instantaneous Forward Voltage Drop
(TA = 25ºC, 300 - 500 µsec pulse)
IF = 3A
IF = 9A
VF1
VF2
1.15
1.30
––
––
VDC
Reverse Leakage Current
(Rated VR, TA = 25ºC, 300 µsec pulse minimum)
IR1
IR2
tRR
––
––
––
––
––
5
µA
µA
Reverse Leakage Current
(Rated VR, TA = 100ºC, 300 µsec pulse minimum)
60
Reverse Recovery Time
(TA = 25ºC, IF = 0.5A, IR = 1.0A, IRR = 0.25A)
250
300
nsec
CASE OUTLINE: SDA669 ( __ )
CASE OUTLINE: SDA669 (T)
Lead Bend Options3/
Available Part Numbers:
SDA669JF; SDA669JFT, SDA669RJF; SDA669RJFT, SDA669JFUB;
SDA669JFDB, SDA669RJFUB; SDA669RJFDB;
SDA669KF; SDA669KFT, SDA669RKF; SDA669RKFT, SDA669KFUB;
SDA669KFDB, SDA669RKFUB; SDA669RKFDB;
SDA669MF; SDA669MFT, SDA669RMF; SDA669RMFT, SDA669MFUB;
SDA669MFDB, SDA669RMFUB; SDA669RMFDB
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability - Contact Factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Up and Down Bend Configurations are Available for ‘__’ (Leaded) Packages Only.
Custom lead bend options available upon request.
4/ Derate Linearly at 0.316A/ºC for TC > 55ºC.
5/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RA0026G
DOC
相关型号：
SDA669MFT
Bridge Rectifier Diode, 3 Phase, 30A, 1000V V(RRM), Silicon, 1.500 X 0.875 INCH, 0.310 INCH HEIGHT, HERMETIC SEALED PACKAGE-5
SSDI
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