SDR1RSMSTXV [SSDI]
Rectifier Diode, 1 Element, 1A, 1400V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN;
| 型号： | SDR1RSMSTXV |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Element, 1A, 1400V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN 二极管 |
| 文件： | 总2页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR1P thru SDR1W
and
SDR1PSMS and SDR1WSMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
1 AMP
Designer’s Data Sheet
1300 ─ 1900 VOLTS
70 nsec ULTRA FAST RECTIFIER
Part Number/Ordering Information 1/
SDR1 __ __ __
2/
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
└
Screening
__ = Not Screened
TX = TX Level
TXV = TXV
FEATURES:
Ultra Fast Recovery: 70 ns Max @ 25°C 4/
Single Chip Construction
S = S Level
PIV to 1800 Volts
Low Reverse Leakage Current
Hermetically Sealed
Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
For High Efficiency Applications
Available in Axial and Surface Mount Versions
Metallurgically Bonded
P = 1300 V
Family
TX, TXV, and S-Level Screening Available2/
R = 1400 V
S = 1500 V
T = 1600 V
V = 1700 V
W = 1800 V
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
1300
1400
1500
1600
1700
1800
SDR1P and SDR1PSMS
SDR1R and SDR1RSMS
SDR1S and SDR1SSMS
SDR1T and SDR1TSMS
SDR1V and SDR1VSMS
SDR1W and SDR1WSMS
Peak Repetitive Reverse
Voltage
VRRM
VRWM
VR
Volts
And
DC Blocking Voltage
Rectified Forward Forward Current
(Resistive Load, 60 Hz, Sine Wave, TA = 25°C)
1.0
IO
Amp
Peak Surge Current
12
IFSM
Amps
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TA = 25°C)
-65 to +175
Operating & Storage Temperature
TOP and TSTG
°C
Thermal Resistance, Junction to Lead, L = 3/8” (Axial)
Junction to End Tab (SMS)
RθJL
RθJE
40
28
°C/W
NOTES:
Axial Lead
SMS
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on
Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp.
5/ For information on operating curves, contact factory.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0001J
DOC
SDR1P thru SDR1W
and
SDR1PSMS and SDR1WSMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
3/
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
SYMBOL VALUE UNIT
Instantaneous Forward Voltage Drop
(IF = 1 Adc, 300- 500 μs Pulse, TA = 25°C)
VF1
VF2
IR1
IR2
CJ
3.60
4.80
5
Vdc
Vdc
μA
μA
pf
Instantaneous Forward Voltage Drop
(IF = 1 Adc, 300- 500 μs Pulse, TA = -55°C)
Maximum Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 25°C)
Maximum Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 100°C)
100
20
Junction Capacitance
(VR = 100Vdc, TA = 25°C , f = 1MHz)
Maximum Reverse Recovery Time 4/
70
trr
ns
DIMENSIONS
DIM. MIN. MAX.
DIMENSIONS
Axial Leaded Case Outline:
Square Tab Surface Mount Case
Outline:
DIM. MIN. MAX.
A
B
C
D
.100” .150”
.125” .200”
.027” .033”
A
B
C
D
.135” .155”
.175” .250”
.022” .028”
1.00”
---
.002”
---
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0001J
DOC
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