SDR3006ZTXV [SSDI]
30A 80nsec 400 to 600 V Ultrafast Rectifier; 30A 80nsec 400至600 V超快整流器
| 型号： | SDR3006ZTXV |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 30A 80nsec 400 to 600 V Ultrafast Rectifier |
| 文件： | 总2页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR3006 series
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
30A 80nsec
400 to 600 V
Part Number / Ordering Information 1/
SDR30 __
__ __
Ultrafast Rectifier
│
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Screening
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
Features:
•
•
•
•
•
Ultrafast Recovery: 100nsec Maximum
High Surge Rating
Package
M = TO-254
Z = TO-254Z
Low Reverse Leakage Current
Low Junction Capacitance
Configuration n/a (ultrafast family)
Hermetically Sealed, Isolated Package
providing enhanced thermal performance
Eutectic Die Attach
•
•
Voltage 04 = 400 V
05 = 500 V
TX, TXV, and S Level Screening iaw MIL-
PRF-19500 Available
06 = 600 V
•
hyperfast version available as SDR3006HF
Maximum Ratings
Symbol
Value
Units
SDR3004
SDR3005
SDR3006
400
500
600
Peak Repetitive Reverse Voltage
VRRM
Volts
Average Rectified Forward Current
Total
Io
30
Amps
(Resistive Load, 60 Hz Sine Wave, TC = 100 °C)
Peak Surge Current
IFSM
500
Amps
ºC
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)
Operating & Storage Temperature
T
OP & TSTG
RθJC
-65 to +200
Maximum Total Thermal Resistance
1.2
ºC/W
Junction to Case
(0.9 typ)
TO-254 (M)
TO-254Z (Z)
NOTE: All specifications are subject to change without notification.
DATA SHEET #: RC0090A
DOC
SCD's for these devices should be reviewed by SSDI prior to release.
SDR3006 Series
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic
Symbol
Min
––
Max
Units
VDC
VDC
µA
Instantaneous Forward Voltage Drop
(TA = 25ºC, 300 – 500 µsec Pulse)
Instantaneous Forward Voltage Drop
(IF = 15A, 300 – 500 µsec Pulse)
Reverse Leakage Current
IF = 15A
IF = 30 A
1.20
VF1
VF2
1.40
TA = -55 ºC
VF3
VF4
1.30
1.10
––
TA = 100 ºC
TA = 25 ºC
IR1
25
––
––
TA = 100 ºC
IR2
2000
(100% of rated VR, 300 µs pulse min.)
Reverse Recovery Time
80
tRR
CJ
––
nsec
pF
(IF = 0.5A, IR = 1A, IRR = 0.25A, TA = 25ºC)
(typ 65)
Junction Capacitance
120
––
(VR = 10VDC, TA = 25ºC, f = 1MHz)
(typ 85)
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
PIN ASSIGNMENT
Available Part Numbers:
PACKAGE
TO-254 (M)
TO-254Z (Z)
Pin 1
Pin 2
Anode
Anode
Pin 3
SDR3004M, SDR3004Z
SDR3005M, SDR3005Z
SDR3006M, SDR3006Z
Cathode
Cathode
Anode
Anode
TO-254:
TO-254Z:
PIN 3
PIN 2
PIN 3
PIN 2
PIN 1
PIN 1
NOTE: All specifications are subject to change without notification.
DATA SHEET #: RC0090A
DOC
SCD's for these devices should be reviewed by SSDI prior to release.
相关型号：
SDR30U080JS
Rectifier Diode, 1 Phase, 1 Element, 30A, 800V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
SSDI
SDR30U080JTX
Rectifier Diode, 1 Phase, 1 Element, 30A, 800V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
SSDI
SDR30U080JTXV
Rectifier Diode, 1 Phase, 1 Element, 30A, 800V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
SSDI
SDR30U100J
Rectifier Diode, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
SSDI
SDR30U100JS
Rectifier Diode, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
SSDI
SDR30U100JTXV
Rectifier Diode, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
SSDI
©2020 ICPDF网 联系我们和版权申明