SDR3MHFSMS [SSDI]
3 AMP 800 - 1200 V 35 nsec Hyper Fast Rectifier; 3 AMP 800 - 1200 V 35纳秒的超快速整流器
| 型号： | SDR3MHFSMS |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 3 AMP 800 - 1200 V 35 nsec Hyper Fast Rectifier |
| 文件： | 总2页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR3KHF & SDR3KHFSMS
thru
SDR3NHF & SDR3NHFSMS
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
3 AMP
800 - 1200 V
35 nsec
Features:
· Hyper Fast Recovery: 35 nsec maximum
· PIV to 1200 Volts
Hyper Fast Rectifier
· Hermetically Sealed
· Void Free Construction
· For High Efficiency Applications
· Single Chip Construction
· Low Reverse Leakage
Axial Lead Diode
SMS
· TX, TXV, S Level screening Available
Maximum Ratings
Symbol
Value
Units
VRRM
VRSM
VR
800
1000
1200
Peak Repetitive Reverse and DC Blocking Voltage
SDR3KHF
SDR3MHF
SDR3NHF
Volts
Average Rectified Forward Current
(Resistive Load, 60 hz Sine Wave, TA = 25 °C)
Io
3.0
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)
IFSM
TOP & TSTG
R?JE
70
Amps
ºC
-65 to +175
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Leads, L = 3/8
Junction to Tabs
20
14
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0097A
DOC
SDR3DHF & SDR3DHFSMS
thru
SDR3NHF & SDR3NHFSMS
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic
Symbol
Max
Units
VDC
VDC
µA
3A
1A
3.1
1.9
Instantaneous Forward Voltage Drop
(TA = 25ºC, pulsed)
VF1
VF2
SDR3KHF – SDR3NHF
SDR3KHF – SDR3NHF
Instantaneous Forward Voltage Drop
(TA = -55ºC, pulsed)
VF3
IR1
IR2
1A
2.0
10
Reverse Leakage Current
(Rated VR, TA = 25ºC, pulsed)
Reverse Leakage Current
(Rated VR, TA = 100ºC, pulsed)
300
µA
Reverse Recovery Time
(IF = 500mA, IR = 1A, IRR = 250mA, TA =
25ºC)
Junction Capacitance
(VR = 10VDC, f = 1MHz, TA = 25ºC)
35
30
nsec
pF
tRR
CJ
DIM
MIN
MAX
0.165”
0.220”
0.053”
––
Case Outline: (Axial)
––
A
B
C
D
––
0.047”
0.950”
DIM
A
MIN
0.172”
0.180”
0.022”
0.002”
MAX
0.180”
0.280”
0.028”
--
Case Outline: (SMS)
B
C
D
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