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SDR4M

更新时间：2024-11-08 10:22:32
品牌：SSDI
描述：ULTRA FAST RECTIFIER

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SDR4M 概述

ULTRA FAST RECTIFIER 超快速整流器 整流二极管

SDR4M 规格参数

生命周期：Active包装说明：E-XALF-W2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.61Is Samacsys：N
其他特性：LOW LEAKAGE CURRENT应用：EFFICIENCY
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1 VJESD-30 代码：E-XALF-W2
最大非重复峰值正向电流：75 A元件数量：1
相数：1端子数量：2
最高工作温度：175 °C最大输出电流：3 A
封装主体材料：UNSPECIFIED封装形状：ELLIPTICAL
封装形式：LONG FORM认证状态：Not Qualified
最大重复峰值反向电压：1000 V最大反向恢复时间：0.07 µs
子类别：Rectifier Diodes表面贴装：NO
端子形式：WIRE端子位置：AXIAL
Base Number Matches：1

SDR4M 数据手册

通过下载SDR4M数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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SDR4G - SDR4N  
and  
SDR4GSMS – SDR4NSMS  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
3 AMP  
400 – 1200 Volts  
__ __ __  
SDR4  
50-80 nsec  
L Screening2/ = None  
⏐
⏐
⏐
⏐
⏐
⏐
⏐
⏐
⏐
⏐
⏐
ULTRA FAST RECTIFIER  
TX = TX Level  
TXV = TXV Level  
S = S Level  
Package  
Features:  
L
___ = Axial  
SMS = Surface Mount Square Tab  
• Ultra Fast Recovery: 50-80 nsec Max. @ 25°C  
85-125 nsec Max. @ 100°C  
• Single Chip Construction  
Voltage  
L
G = 400 V  
• PIV to 1200 Volts  
J = 600 V  
K = 800 V  
M = 1000 V  
N = 1200 V  
• Low Reverse Leakage Current  
• Hermetically Sealed  
• For High Efficiency Applications  
• Available in Axial Leaded & Surface Mount versions  
• Metallurgically Bonded  
• TX, TXV, and S-Level Screening Available2/  
Maximum Ratings  
Symbol  
Value  
Units  
400  
600  
800  
1000  
1200  
Peak Repetitive Reverse and  
DC Blocking Voltage  
SDR4G  
SDR4J  
SDR4K  
SDR4M  
SDR4N  
VRRM  
VRWM  
VR  
Volts  
Average Rectified Forward Current  
(Resistive Load, 60 Hz Sine Wave, TA = 25ºC)  
3
Io  
Amps  
Amps  
Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to  
Reach Equilibrium Between Pulses, TA = 25ºC)  
75  
IFSM  
-65 to +175  
Operating & Storage Temperature  
Top & Tstg  
ºC  
Junction to Lead, L = 3/8 "  
Maximum Thermal Resistance  
20  
14  
RθJL  
RθJE  
ºC/W  
Junction to End Tab  
Notes:  
Axial Leaded  
SMS (Square)  
1/ For Ordering Information, Price, Operating Curves, and  
Availability – Contact Factory.  
2/ Screening Based on MIL-PRF-19500. Screening Flows  
Available on Request.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RU0015B  
DOC  
SDR4G - SDR4N  
and  
SDR4GSMS – SDR4NSMS  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Electrical Characteristics  
Part Type Symbol  
Max  
Units  
Vdc  
Vdc  
μA  
SDR2G – J  
VF  
1.9  
2.1  
Instantaneous Forward Voltage Drop  
(IF = 3 Adc, TA = 25ºC, 300 µs pulse)  
SDR2K – N  
SDR2G – J  
VF  
2.1  
2.3  
Instantaneous Forward Voltage Drop  
(IF = 3 Adc, TA = -55ºC, 300 µs pulse)  
SDR2K – N  
Reverse Leakage Current  
(Rated VR, TA = 25ºC, 300 µs pulse minimum)  
5
IR  
IR  
Reverse Leakage Current  
(Rated VR, TA = 100ºC, 300 µs pulse minimum)  
0.5  
40  
μA  
Junction Capacitance  
(VR = 10 Vdc, TA = 25ºC, f = 1MHz)  
CJ  
pF  
50  
60  
70  
80  
SDR2G – J  
SRS1K  
SRS1M  
SRS1N  
Reverse Recovery Time  
(IF = 500 mA, IR = 1A, IRR = 0.25A, TA = 25ºC)  
trr  
nsec  
Case Outline: (Axial)  
DIMENSIONS  
ØC  
ØA  
D
B
D
DIM  
MIN  
.120”  
.130”  
.047”  
1.00”  
MAX  
.180”  
.230”  
.053”  
---  
A
B
C
D
Case Outline: Surface Mount (SMS)  
B
A
DIMENSIONS  
DIM  
A
B
C
D
MIN  
MAX  
A
0.172”  
0.180”  
0.022”  
0.002”  
0.180”  
0.280”  
0.028”  
––  
D
C
Dimensions prior to solder dipping  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RU0015B  
DOC  

SDR4M 相关器件

型号 制造商 描述 价格 文档
SDR4MS SSDI Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 获取价格
SDR4MSM SSDI 暂无描述 获取价格
SDR4MSMS SSDI 3 AMP 400-1200 VOLTS 50-80 nsec ULTRA FAST RECTIFIER 获取价格
SDR4MSMSS SSDI Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 获取价格
SDR4MSMSTX SSDI Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 获取价格
SDR4MSMSTXV SSDI Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 获取价格
SDR4MTX SSDI Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 获取价格
SDR4MTXV SSDI Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 获取价格
SDR4N SSDI 3 AMP 400-1200 50-80nsec ULTRA FAST RECTIFIER 获取价格
SDR4NS SSDI Rectifier Diode, 1 Phase, 1 Element, 3A, 1200V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 获取价格

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