SDR626CTSMP6S [SSDI]
Rectifier Diode,;
| 型号： | SDR626CTSMP6S |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 二极管 |
| 文件： | 总2页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR623CT/CA
thru
SDR626CT/CA
`
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
40 A, 35 nsec, 300 - 600 V
Common Anode & Common Cathode
Hyper Fast Centertap Rectifier
Part Number / Ordering Information1/
SDR62 3 CT/CA C __
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
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Features:
Hyper Fast Recovery: 35 nsec Maximum3/
Isolated Low Profile Package
Low Reverse Leakage Current
Eutectic Die Attach Available
Hermetically Sealed Package
Dual Centertap: 1 Common Anode,
1 Common Cathode
Package Type
C = Ceramic Seals
SMP6 = Surface Mount
TO-259 (6 Pins)
Configuration
CT = Common Cathode
CA = Common Anode
Easy to Implement as a Powerful Full Bridge Rectifier
Optional Bent Leads Available
Contact Factory for:
Voltage/Family
3 = 300 V
- Higher Voltages
- Fast and Ultrafast Recovery Versions
5 = 500 V
6 = 600 V
4 = 400 V
Weight: 7.5 g (typ)
TX, TXV, and S-Level Screening Available2/
Maximum Ratings 6/
Symbol
Value
Units
Volts
SDR623CT/CA
SDR624CT/CA
SDR625CT/CA
SDR626CT/CA
300
400
500
600
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Total
Io
80
Amps
(Resistive Load, 60 Hz Sine Wave, TA = 25°C)
Peak Surge Current 5/
(8.3 ms Pulse, Half Sine Wave, TA = 25°C)
IFSM
200
Amps
°C
Operating & Storage Temperature
TOP & TSTG
-65 to +200
Maximum Total Thermal Resistance
Junction to Case4/
0.65
1.9
°C/W
RJC
Junction to Case5/
Notes:
6 Pin TO-259
Surface Mount
6 Pin TO-259
1/ For ordering information, price, operating curves, and availability- contact
factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Recovery conditions: IF = 0.5 Amp, IR = 1.0 Amp, rec. to 0.25 Amp.
4/ All legs tied together.
5/ Each leg.
6/ Ratings at 25°C (unless otherwise specified).
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0231H
DOC
SDR623CT/CA
thru
SDR626CT/CA
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Symbol
Max
Units
VDC
Instantaneous Forward Voltage Drop
(IF = 10 ADC, Pulse)
(IF = 20 ADC, Pulse)
TA = 25°C
TA = 25°C
VF1
VF2
1.45
1.65
Instantaneous Forward Voltage Drop
(IF = 10 ADC, Pulse)
TA = 100°C
TA = -55°C
VF3
VF4
1.35
1.55
VDC
Reverse Leakage Current
(100% of rated VR, Pulse)
TA = 25°C
TA = 100°C
IR1
IR2
50
5
µA
mA
Reverse Recovery Time
(IF = 0.5 A, IR = 1 A, IRR = 0.25 A, TA = 25°C)
trr
35
nsec
pF
Junction Capacitance
(VR = 10 VDC, TA = 25°C, f = 1MHz)
CJ
150
6 Pin TO-259 Outline
(dimensions in inches):
Surface Mount
6 Pin TO-259 Outline
(dimensions in inches):
Tolerances Unless Specified-
.XX ± .020"
Easy to Implement as a Powerful FULL BRIDGE RECTIFIER
.XXX ± .010"
PIN ASSIGNMENT
Configuration
Pin 1
Pin 2
Pin 3
Common Cathode
Anode 1 Cathode Anode 2
Configuration
Pin 4
Pin 5
Pin 6
Common Anode
Cathode 1 Anode Cathode 2
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0231H
DOC
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