SDR952MCTD [SSDI]
Rectifier Diode, 1 Phase, 2 Element, 50A, 200V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN;
| 型号： | SDR952MCTD |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 50A, 200V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN 超快速恢复二极管 局域网 |
| 文件： | 总2页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR950M & Z
thru
SDR952M & Z
SOLID STATE DEVICES, INC.
14830 Valley View Avenue * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
50AMPS
100 - 200 VOLTS
40 nsec
1.30
Designer's Data Sheet
FEATURES:
HYPER FAST
RECTIFIER
• Hyper Fast Recovery: 40 nsec Maximum
• High Surge Rating
• Low Reverse Leakage Current
• Low Junction Capacitance
TO-254 (M)
TO-254Z (Z)
• Hermetically Sealed Package
• Gold Eutectic Die Attach Available
• Ultrasonic Aluminum Wire Bonds
• Ceramic Seal for Improved Hermeticity Available
• Higher Voltages and Faster Recovery Time
Available, Consult Factory
• TX, TXV and Space Level Screening Available
SYMBOL
VALUE
UNITS
Volts
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SDR950M & Z
SDR951M & Z
SDR952M & Z
V
100
150
200
RRM
RWM
V
V
R
Average Rectified Forward Current.
(Resistive load, 60Hz, SineWave,
Io
50
Amps
T <150oC, Derate to 0A @ 200oC)
C
Peak Surge Current
I
300
-65 TO +200
0.85
Amps
oC
FSM
(8.3 ms Pulse, Half Sine Wave, T = 55oC, I = 50A) 1/
C
O
Operating and Storage Temperature
TOP & Tstg
RθJC
Maximum Thermal Resistance
oC/W
Junction to Case, 1/
NOTE:
1/
Connect Pins 2 and 3 Together.
NOTE: All specifications are subject to change without notification.
DATA SHEET #: RH0039G
SCD's for these devices should be reviewed by SSDI prior to release.
SDR950M & Z
thru
SOLID STATE DEVICES, INC.
SDR952M & Z
14830 Valley View Avenue * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
SYMBOL
MINIMUM
MAXIMUM
UNITS
Electrical Characteristics
Instantaneous Forward Voltage Drop
I = 25A
V
F1
V
F2
--
--
1.00
1.25
F
F
VDC
(T = 25oC, 300 - 500µsec Pulse)
I = 50A
A
Instantaneous Forward Voltage Drop
V
--
1.35
VDC
V
F3
(I = 50A, T = -65oC, 300 - 500µsec pulse)
F
C
Breakdown Voltage
SDR950M & Z
SDR951M & Z
SDR952M & Z
100
150
200
--
--
--
--
--
100
10
(I = 250µA, T = 25oC)
BVR
R
A
Reverse Leakage Current
T = 25oC
I
µA
A
R1
R2
(80% of Rated V 300µs pulse min.)
T = 100oC
I
mA
R,
C
Junction Capacitance
C
--
--
900
40
pF
J
(V = 10V , T = 25oC, f = 1MHz)
R
DC
A
Reverse Recovery Time
t
RR
nsec
(I = 1.0A, I = 250 mA, T = 25oC)
R
RR
A
CASE OUTLINE: TO-254 (Sufix M)
CASE OUTLINE: TO-254Z (Sufix Z)
OPTIONALLEAD BEND CONFIGURATION
PIN ASSIGNMENT
CODE
CT
FUNCTION
Common Cathode
PIN 1
PIN 2
PIN 3
Anode Cathode Anode
CA
Common Anode Cathode Anode Cathode
SUFIX MD & ZD
SUFIX MU & ZU
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