SDR9PTXV [SSDI]
Rectifier Diode, 1 Phase, 1 Element, 9A, 1300V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2;
| 型号： | SDR9PTXV |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 9A, 1300V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 整流二极管 快速恢复二极管 |
| 文件： | 总2页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR9JF thru SDR9MF
and
SDR9JFSMS thru SDR9MFSMS
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
9.0 AMPS
600 ─ 1000 VOLTS
SDR9 __ __ __
250 ns typical FAST RECOVERY
RECTIFIER
2/
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
└
Screening
__ = Not Screened
TX = TX Level
TXV = TXV
FEATURES:
S = S Level
Fast Reverse Recovery: 250ns Maximum 4/
PIV to 1000 Volts
Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
ASMS = SMS with .145/.155” End Tab Size
Hermetically Sealed
Low Reverse Leakage Current
Single Chip Construction
Replaces Larger DO-4 Rectifiers
Low Thermal Resistance
Voltage/Family
JF = 600V
Available in Axial & Square Tab Versions
TX, TXV, and S-Level Screening Available2/
KF = 800V
MF = 1000V
Ultra Fast and Hyper Fast Recovery Versions
Available- Contact Factory
MAXIMUM RATINGS 3/
RATING
SYMBOL VALUE
UNIT
Peak Repetitive Reverse
Voltage
VRRM
VRWM
VR
SDR9JF & SDR9JFSMS
SDR9KF & SDR9KFSMS
SDR9MF & SDR9MFSMS
600
800
1000
Volts
And
DC Blocking Voltage
9.0
Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TA = 25°C )
IO
Amps
Amps
Peak Surge Current
(8.3 ms pulse, half sine wave, superimposed on Io, allow
junction to reach equilibrium between pulses, TA = 25°C)
100
IFSM
TJ and
TSTG
-65 to +175
Operating & Storage Temperature
°C
Junction to Lead for Axial, L =.125"
Thermal Resistance
RθJL
RθJE
8
4
°C/W
Junction to End Tab for Surface Mount
NOTES:
Axial Leaded
SMS
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/ IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0056E
DOC
SDR9JF thru SDR9MF
and
SDRJFSMS thru SDRMFSMS
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
3/
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
SYMBOL
VALUE
UNIT
MAX
Instantaneous Forward Voltage Drop
IF = 9.0 Adc, 300-500μs pulse
TA = +25°C
TA = -55°C
VF1
VF2
1.15
1.30
Vdc
Reverse Leakage Current
Rated VR, 300μs pulse minimum
TA = +25°C
TA =+100°C
IR1
IR2
1.0
50
μA
Junction Capacitance
VR = 10 Vdc, f = 1MHz, TA = 25°C
CJ
trr
50
pF
ns
Reverse Recovery Time
IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C
250 typ.
325 max.
Package Outlines:
DIMENSIONS (inches)
DIMENSIONS (inches)
DIM.
A
B
C
D
DIM.
A (SMS)
A (ASMS)
Minimum
---
Maximum
.170
Minimum
.170
Maximum
.180
.155
.300
.030
---
.210
.037
1.000
.250
.043
---
.145
.260
.020
.002
B
C
D
SMS
AXIAL
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0056E
DOC
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