SED20HB100T [SSDI]

Rectifier Diode,;


型号：	SED20HB100T
厂家：	SOLID STATES DEVICES, INC
描述：	Rectifier Diode,
文件：	总2页 (文件大小：83K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SED20HB100, SED20HE100

SED20HB150, SED20HE150

Solid State Devices, Inc.

14701 Firestone Blvd. * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

20 AMP

100 - 150 VOLTS

SCHOTTKY RECTIFIER

Part Number / Ordering Information ^1/

SED20 __ 100 __

L Screening^2/



__ = None

TX = TX Level

TXV = TXV Level

S = S Level

FEATURES:

•

Very Low Reverse Leakage

Low Forward Voltage Drop

Hermetically Sealed Power Surface Mount Package

Guard Ring for Overvoltage Protection

Eutectic Die Attach



Voltage

100 = 100 V

150 = 150 V



Configuration

HB = without lead

HE = with lead

175°C Operating Temperature

TX, TXV, and Space Level Screening Available^2/

MAXIMUM RATINGS

Symbol

Value

Units

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

and DC Blocking Voltage

SED20HB100, SED20HE100

SED20HB150, SED20HE150

100

150

Average Rectified Forward Current

(Resistive Load, 60 Hz, Sine Wave, T_A= 100°C)

I_O

Peak Surge Current

(8.3 ms Pulse, Half Sine Wave, Superimposed on I_O, Allow Junction

to Reach Equilibrium between Pulses, T_A= 25°C)

I_FSM

175

Operating and Storage Temperature

T_OP& T_stg-55 to +175

°C

Maximum Thermal Resistance

Junction to Case

1.25

°C/W

R_θJC

Notes:

SEDPACK 1

1/ For ordering information, price, operating curves, and availability – contact

factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

HB Series

HE Series

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: SH0024E

DOC

SED20HB100, SED20HE100

SED20HB150, SED20HE150

Solid State Devices, Inc.

14701 Firestone Blvd. * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Symbol

Typical

Maximum

Unit

ELECTRICAL CHARACTERISTICS

0.65

0.55

0.41

T_A= -55°C

T_A= 25°C

T_A= 125°C

V_F1

V_F2

V_F3

Instantaneous Forward Voltage Drop

(I_F= 1 A_DC, 300 - 500 µsec pulse)

0.60

0.46

V_DC

0.76

0.68

0.53

T_A= -55°C

T_A= 25°C

T_A= 125°C

V_F4

V_F5

V_F6

Instantaneous Forward Voltage Drop

(I_F= 5 A_DC, 300 - 500 µsec pulse)

0.75

0.60

V_DC

0.85

0.75

0.60

T_A= -55°C

T_A= 25°C

T_A= 125°C

V_F7

V_F8

V_F9

Instantaneous Forward Voltage Drop

(I_F= 10 A_DC, 300 - 500 µsec pulse)

0.82

0.67

0.91

0.79

0.65

T_A= -55°C

T_A= 25°C

T_A= 125°C

V_F10

V_F11

V_F12

Instantaneous Forward Voltage Drop

(I_F= 20 A_DC, 300 - 500 µsec pulse)

0.87

0.73

Reverse Leakage Current

(Rated V_R, T_A= 25°C, 300 µsec pulse minimum)

I_R1

I_R2

I_R3

C_J

0.2

150

0.75

750

µA

Reverse Leakage Current

(Rated V_R, T_A= +125°C, 300 µsec pulse minimum)

Reverse Leakage Current

(Rated V_R, T_A= +150°C, 300 µsec pulse minimum)

Junction Capacitance

(f = 1MHz, T_A= 25°C)

V_R= 5 V

V_R= 10 V

460

335

400

CASE OUTLINE:

Sedpack 1 (HB)

CASE OUTLINE:

Sedpack 1 (HE)

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: SH0024E

DOC

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