SFF116Z10ZDB [SSDI]

Power Field-Effect Transistor, 55A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254Z, 3 PIN;


型号：	SFF116Z10ZDB
厂家：	SOLID STATES DEVICES, INC
描述：	Power Field-Effect Transistor, 55A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254Z, 3 PIN 局域网开关晶体管
文件：	总2页 (文件大小：113K)
中文：	中文翻译
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SFF116N10M

SFF116N10Z

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

116 AMP , 100 Volts, 15 mΩ

Avalanche Rated N-channel

MOSFET

Part Number / Ordering Information ^1/

SFF116N10 ___ ___ ____

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└

│

└

Features:

Rugged poly-Si gate

Lead Option ^3/

__ = Straight Leads

DB = Down Bend

UB = Up Bend

•

Lowest ON-resistance in the industry

Avalanche rated

Hermetically Sealed, Isolated Package

Low Total Gate Charge

Fast Switching

TX, TXV, S-Level screening available

Improved (R_DS(ON)Q_G) figure of merit

Package ^{3/ 4/}

M = TO-254

Z = TO-254Z

Maximum Ratings

Symbol

V_DSS

Value

Units

Drain - Source Voltage

Gate – Source Voltage

100

±20

±30

continuous

transient

V_GS

I_D1

Max. Continuous Drain Current (package

limited)

@ T_C= 25ºC

@ T_C= 175ºC

I_D2

I_D3

116

Max. Instantaneous Drain Current (Tj limited)

Max. Avalanche current

I_AR

@ L= 0.1 mH

@ T_C= 25ºC

E_AS

E_AR

2500

Single and Repetitive Avalanche Energy

Total Power Dissipation

150

P_D

Operating & Storage Temperature

ºC

-55 to +175

T_OP& T_STG

Maximum Thermal Resistance

(Junction to Case)

1.0

(typ.0.75)

R_θJC

ºC /W

NOTES:

TO-254

TO-254Z

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact

factory.

2/ Screening based on MIL-PRF-19500. Screening flows

available on request.

3/ For package outlines / lead bending options / pinout

configurations - contact factory.

4/ Maximum current limited by package configuration

5/ Unless otherwise specified, all electrical characteristics

@25^oC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0037A

DOC

SFF116N10M

SFF116N10Z

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Electrical Characteristics ^5/

Symbol Min Typ Max Units

Drain to Source Breakdown Voltage

BV_DSS

_GS= 0V, I_D= 250μA

100

105

––

V_GS= 10V, I_D= 50A, Tj= 25^oC

V_GS= 10V, I_D= 50A, Tj=125^oC

V_GS= 10V, I_D= 50A, Tj= 150^oC

––

Drain to Source On State Resistance

Gate Threshold Voltage

R_DS(on)

mΩ

V_DS= V_GS, I_D= 1.0mA, Tj= 25^oC

V_DS= V_GS, I_D= 1.0mA, Tj= 125^oC

V_DS= V_GS, I_D= 1.0mA, Tj= -55^oC

3.0

2.0

––

4.0

3.2

5.0

––

V_GS(th)

V_GS= ±20V, Tj= 25^oC

––

±100

––

Gate to Source Leakage

I_GSS

V_GS= ±20V, Tj= 125^oC

V_DS= 100V, V_GS= 0V, T_j= 25^oC

V_DS= 100V, V_GS= 0V, T_j= 125^oC

V_DS= 100V, V_GS= 0V, T_j= 175^oC

––

0.01

5.0

250

––

μA

Zero Gate Voltage Drain Current

Forward Transconductance

I_DSS

g_fs

_DS= 15V, I_D= 35A, T_j= 25^oC

––

Mho

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q_g

Q_gs

Q_gd

V_GS= 12V

V_DS= 35V

I_D= 50A

––

185

250

120

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

t_d(on)

t_r

t_d(off)

t_f

V_GS= 11V

V_DS= 50V

I_D= 35A

––

100

nsec

R_G= 2.35Ω, pw= 3us

Diode Forward Voltage

V_SD

I_F= 35A, V_GS= 0V

––

0.95

1.2

Diode Reverse Recovery Time

Reverse Recovery Charge

t_rr

Q_rr

––

180

0.85

300

––

nsec

μC

I_F= 50A, di/dt = 100A/usec

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C_iss

C_oss

C_rss

V_GS= 0V

V_DS= 25V

f = 1 MHz

––

4800

2050

600

––

PIN ASSIGNMENT (Standard)

Available Part Numbers:

Package

TO-254 (M)

TO-254Z (Z)

Drain

Pin 1

Source

Pin 2

Gate

Pin 3

Consult Factory

TO254 (M)

TO254Z (Z)

PIN 3

PIN 2

PIN 1