SFF11N80 [SSDI]

11 AMP / 800 Volts 0.95 ヘ N-Channel MOSFET; 11 AMP / 800伏特0.95ヘN沟道MOSFET


型号：	SFF11N80
厂家：	SOLID STATES DEVICES, INC
描述：	11 AMP / 800 Volts 0.95 ヘ N-Channel MOSFET 11 AMP / 800伏特0.95ヘN沟道MOSFET
文件：	总3页 (文件大小：147K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SFF11N80 Series

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

11 AMP / 800 Volts

0.95 Ω

Part Number / Ordering Information ^1/

SFF11N80 __ __ __

N-Channel MOSFET

Screening ^2/__ = Not Screen

TX = TX Level

│

└

│

└

TXV = TXV Level

S = S Level

Features:

Lead Option ^3/__ = Straight Leads

DB = Down Bend

• Rugged Construction with Polysilicon Gate Cell

• Low R_DS(ON)and High Transconductance

• Excellent High Temperature Stability

• Very Fast Switching Speed

• Fast Recovery and Superior dV/dt performance

• Increased Reverse Energy Capability

UB = Up Bend

Package ^3/M = TO-254

Z = TO-254Z

• Low Input and Transfer Capacitance for Easy Paralleling

• Hermetically Sealed, Isolated Package

• Ceramic Seal Package Available. Contact Factory

• TX, TXV, S-Level screening available

• Replacement for IXTH11N80 Types

Maximum Ratings

Symbol

Value

Units

Drain – Source Voltage

Gate – Source Voltage

V_DS

V_GS

I_D

800

±20

Volts

Amps

Continues Collector Current

150

114

T_C= 25ºC

T_C= 55ºC

Power Dissipation

P_D

Top & Tstg

R_θJC

ºC

Operating & Storage Temperature

-55 to +175

Maximum Thermal Resistance

0.83

ºC/W

Junction to Case

TO-254 (M)

TO-254Z (Z)

NOTE: All specifications are subject to change without notification.

DATA SHEET #: F00213C

DOC

SCD's for these devices should be reviewed by SSDI prior to release.

SFF11N80 Series

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Electrical Characteristics ^4/

Symbol

BV_DSS

R_DS(on)

I_D(on)

V_GS(th)

I_GSS

Min

800

––

Typ

––

Max

––

Units

Volts

Ω

Drain to Source Breakdown Voltage

(V_GS= 0V, I_D= 250µA)

Drain to Source On State Resistance

––

0.95

––

(V_GS= 10V, I_D= 5.5A)

On State Drain Current

––

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Gate Threshold Voltage

2.0

––

4.5

(V_DS= V_GS, I_D= 250µA)

Gate to Source Leakage

––

±100

(V_GS= ±20V)

_DS= 800V, T_A= 25ºC

––

250

1.0

µA

Zero Gate Voltage Drain Current

I_DSS

(V_GS= 0V)

V_DS= 640V, T_A= 125ºC

Forward Transconductance *

8.0

––

Mho

g_fs

(V_DS> I_D(on)x R_DS(on)Max, I_D= 5.5A)

_GS= 10V

––

128

145

Total Gate Charge

Q_g

Q_gs

Q_gd

V_DS= 640V

I_D= 5.5A

Gate to Source Charge

Gate to Drain Charge

––

Turn on Delay Time

t_d(on)

V_DS= 400V

I_D= 5.5A

Rise Time

nsec

100

Turn on Delay Time

Fall Time

t_d(off)

R_G= 2.0Ω

Diode Forward Voltage *

––

1.5

V_SD

t_rr

(I_F= 11A, V_GS= 0V)

Diode Reverse Recovery Time

550

nsec

(I_F= 11A, di/dt = 100A/µsec)

_GS= 0V

––

4200

360

––

Input Capacitance

C_iss

C_oss

C_rss

V_DS= 25V

f = 1MHz

Output Capacitance

100

Reverse Transfer Capacitance

NOTES:

Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%

1/ For Ordering Information, Price, and Availability Contact Factory.

2/ Screening per MIL-PRF-19500

3/ For Package Outlines Contact Factory.

4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.

PIN ASSIGNMENT (Standard)

Available Part Numbers:

SFF11N80M; SFF11N80MDB; SFF11N80MUB;

Package

Drain

Pin 1

Source

Pin 2

Gate

Pin 3

SFF11N80Z; SFF11N80ZDB; SFF11N80ZUB;

TO-254 (M)

TO-254Z (Z)

SOLID STATE DEVICES INC.

14830 Valley View, La Mirada, Ca 90631

DATA SHEET APPROVAL FORM

□

F00213

SFF11N80M

SFF11N80Z

Data Sheet Number

Part Number(s):

Rev

Check Box to Include on Web:

Approval

Sign

Date

Engineering Manager:

Executive / CEO

Operation Manager:

Marketing Manager:

Quality Manager:

Revisions

ECO No

REV

DATE

DESCRIPTION

APPROVAL

E-030492

08/12/03 Changed Trr 250ns to 550ns

FORM# Q312 Rev. B

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