SFF140JBW [SSDI]

28 AMP / 100 Volts 0.077OHM N-Channel POWER MOSFET; 28 AMP / 100伏特0.077OHM N沟道功率MOSFET


型号：	SFF140JBW
厂家：	SOLID STATES DEVICES, INC
描述：	28 AMP / 100 Volts 0.077OHM N-Channel POWER MOSFET 28 AMP / 100伏特0.077OHM N沟道功率MOSFET 晶体晶体管功率场效应晶体管开关局域网
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SFF140J

SFF140JBW

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

28 AMP / 100 Volts

0.077 W

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

N-Channel

SFF140 _J_ __ __

Screening ^2/__ = Not Screen

TX = TX Level

POWER MOSFET

TXV = TXV Level

S = S Level

Features:

Lead Option ^3/__ = Cooper Core Alloy Leads

· Rugged Construction with Polysilicon Gate Cell

· Low R_DS(ON)and High Transconductance

· Excellent High Temperature Stability

· Very Fast Switching Speed

· Fast Recovery and Superior dV/dt Performance

· Increased Reverse Energy Capability

BW = Welded Copper Leads

Package: TO-257

· Low Input and Transfer Capacitance for Easy Paralleling

· Ceramic Seals for Improved Hermeticity

· Hermetically Sealed Surface Mount Power Package

· TX, TXV, Space Level Screening Available

· Replacement for IRF140/540 Types

· Available with enhanced flexibility Cu pins: SFF140JBW

Maximum Ratings

Symbol

Value

100

Units

Drain – Source Voltage

Gate – Source Voltage

V_DS

V_GS

I_D

Volts

Amps

±20

Continuous Collector Current

T_C= 25ºC

T_C= 55ºC

62.5

47.5

Power Dissipation

P_D

Top & Tstg

R_qJC

ºC

-55 to +150

Operating & Storage Temperature

Maximum Thermal Resistance

Junction to Case

ºC/W

TO-257

Pin Out:

Pin1: Drain

Pin2: Source

Pin3: Gate

SUFFIX: J

SUFFIX: JD

SUFFIX: JU

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00029C

DOC

SFF140J

SFF140JBW

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Electrical Characteristics @ T_J= 25ºC

(Unless Otherwise Specified)

Drain to Source Breakdown Voltage

(VGS=0 V, ID=250 mA)

Symbol

BV_DSS

R_DS(on)1

R_AS(on)2

V_GS(th)

g_fs

Min

Typ

––

Max

––

Units

Volts

100

––

Drain to Source On State Resistance

(VGS=10 V, ID=50% Rated ID)

0.067

––

0.077

0.125

4.0

On State Drain Current

(VDS>ID(on) X RDS(on) Max, VGS=10V, ID= rated ID)

Gate Threshold Voltage

(VDS=VGS, ID= 250mA)

2.0

8.7

2.4

Forward Transconductance

(VDS>ID(on) X RDS(on) Max, IDS= 60% Rated ID)

S(mho)

––

Zero Gate Voltage Drain Current

(VDS=max rated voltage, VGS=0 V)

(VDS=80% rated VDS, VGS=0 V, TA=150ºC)

––

250

I_DSS

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

––

+100

-100

I_GSS

At rated VGS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q_g

Q_gs

Q_gd

VGS=10 Volts

60% rated VDS

60% Rated ID

––

Turn on Delay Time

Rise Time

Turn on Delay Time

Fall Time

VDD=50% Rated VDS

60% Rated ID

RG= 6.2W

––

110

td(on)

td(off)

nsec

VGS=10 Volts

Diode Forward Voltage

(IS= Rated ID, VGS=0 V, TJ=25ºC)

V_SD

––

1.3

2.5

T_J=25ºC

IF=10A

Di/dt=100A/msec

Diode Reverse Recovery Time

Reverse Recovery Charge

t_rr

Q_RR

nsec

––

0.44

150

0.91

400

1.9

Input Capacitance

Reverse Transfer Capacitance

C_iss

C_oss

C_rss

VGS=0 Volts

VDS=25 Volts

f=1 MHz

––

1750

575

125

––

For thermal derating curves and other characteristics please contact SSDI Marketing Department.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00029C

DOC

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