SFF50N20M [SSDI]
50 AMPS 200 VOLTS 0.055 OHM N-Channel POWER MOSFET; 50安培200伏特0.055 OHM的N沟道功率MOSFET
| 型号： | SFF50N20M |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 50 AMPS 200 VOLTS 0.055 OHM N-Channel POWER MOSFET |
| 文件： | 总2页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY
SFF50N20M
SFF50N20Z
SOLID STATE DEVICES, INC.
14830 Valley View Av. * La Mirada, Ca 90670
Phone: (562) 404-7855 * Fax: (562) 404-1773
50 AMPS
200 VOLTS
0.055
DESIGNER'S DATA SHEET
N-CHANNEL
POWER MOSFET
FEATURES:
Rugged construction with polysilicon gate
Low RDS (on) and high transconductance
Excellent high temperature stability
Very fast switching speed
TO-254 (M)
TO-254Z (Z)
Fast recovery and superior dv/dt performance
Increased reverse energy capability
Low input and transfer capacitance for easy paralleling
Hermetically sealed package
TX, TXV, and Space Level screening available
Replaces: IXTH50N20 Types
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
VALUE
200
UNIT
Volts
Drain to Source Voltage
Gate to Source Voltage
V
DS
GS
V
±20
Volts
Continuous Drain Current
I
50
Amps
oC
D
Operating and Storage Temperature
T &T
-55 to +150
op
stg
Thermal Resistance, Junction to Case
R
0.83
oC/W
JC
Total Device Dissipation
@ TC = 25oC
@ TC = 55oC
150
114
P
D
Watts
CASE OUTLINE: TO-254 (Sufix M)
CASE OUTLINE: TO-254Z (Sufix Z)
NOTE: All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00129E
PRELIMINARY
SFF50N20M
SFF50N20Z
SOLID STATE DEVICES, INC.
14830 Valley View Av. * La Mirada, Ca 90670
Phone: (562) 404-7855 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified)
RATING
SYMBOL
MIN
TYP
MAX
UNIT
V
Drain to Source Breakdown Voltage
(VGS =0 V, ID =250 A)
BV
200
-
-
DSS
Drain to Source ON State Resistance
(VGS = 10 V, 60% of Rated ID)
R
-
-
-
0.055
-
DS(on)
ON State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10 V)
I
50
A
V
D(on)
Gate Threshold Voltage
(VDS =VGS, ID = 4mA)
V
2.0
20
-
4.0
-
GS(th)
Forward Transconductance
(VDS > ID(on) x RDS (on) Max, IDS = 50% rated ID)
g
25
S(É)
fs
Zero Gate Voltage Drain Current
(V = 0V)
V
V
= max rated Voltage, T = 25oC
-
-
-
-
250
1000
GS
DS
A
I
A
DSS
GSS
= 80% rated V , T = 125oC
DS
DS
A
-
-
-
-
+100
-100
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
I
nA
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10 V
50% rated VDS
50% rated ID
Qg
Qgs
Qgd
-
-
-
190
35
95
220
50
120
nC
VDD =50%
rated VDS
50% rated ID
RG = 6.2
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
t
-
-
-
-
28
33
110
30
35
40
130
35
d (on)
tr
nsec
V
t
d (off)
tf
VGS = 10V
Diode Forvard Voltage
V
SD
-
-
1.50
(I = rated I , V = 0V, T = 25oC)
S
D
GS
J
T =25oC
J
Diode Reverse Recovery Time
Reverse Recovery Charge
t
-
-
-
1.5
225
-
nsec
C
rr
IF = 10A
Q
RR
di/dt = 100A/ sec
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS =0 Volts
VDS =25 Volts
f =1 MHz
Ciss
Coss
Crss
-
-
-
4400
800
285
-
-
-
pF
NOTES:
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