SFF50N30MDBTX [SSDI]

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型号：	SFF50N30MDBTX
厂家：	SOLID STATES DEVICES, INC
描述：	暂无描述晶体晶体管功率场效应晶体管开关局域网
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SFF50N30M

SFF50N30Z

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

50 AMP , 300 Volts, 50 mΩ

Avalanche Rated N-channel

MOSFET

Part Number / Ordering Information ^1/

SFF50N30 ___ ___ ___

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└

│

└

Features:

Rugged poly-Si gate

Lead Option ^3/

__ = Straight Leads

DB = Down Bend

UB = Up Bend

•

Lowest ON-resistance in the industry

Avalanche rated

Hermetically Sealed, Isolated Package

Low Total Gate Charge

Fast Switching

TX, TXV, S-Level screening available

Improved (R_DS(ON)Q_G) figure of merit

Package ^{3/ 4/}

M = TO-254

Z = TO-254Z

Maximum Ratings

Symbol

V_DSS

Value

Units

Drain - Source Voltage

Gate – Source Voltage

300

±20

±30

continuous

transient

V_GS

I_D1

Max. Continuous Drain Current (package

limited)

@ T_C= 25ºC

@ T_C= 125ºC

I_D2

I_D3

Max. Instantaneous Drain Current (Tj limited)

Max. Avalanche current

I_AR

@ L= 0.1 mH

@ T_C= 25ºC

E_AS

E_AR

1500

Single and Repetitive Avalanche Energy

Total Power Dissipation

P_D

150

Operating & Storage Temperature

ºC

-55 to +150

T_OP& T_STG

Maximum Thermal Resistance

(Junction to Case)

1.0

(typ.0.75)

R_θJC

ºC /W

NOTES:

TO-254

TO-254Z

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact

factory.

2/ Screening based on MIL-PRF-19500. Screening flows

available on request.

3/ For package outlines / lead bending options / pinout

configurations - contact factory.

4/ Maximum current limited by package configuration

5/ Unless otherwise specified, all electrical characteristics

@25ºC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0038B

DOC

SFF50N30M

SFF50N30Z

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Electrical Characteristics ^5/

Symbol Min Typ Max Units

Drain to Source Breakdown Voltage

Drain to Source On State Resistance

BV_DSS

_GS= 0V, I_D= 250μA

300

310

––

V_GS= 10V, I_D= 35A, Tj= 25ºC

V_GS= 10V, I_D= 35A, Tj=125ºC

––

110

––

R_DS(on)

mΩ

V_DS= V_GS, I_D= 1.0mA, Tj= 25ºC

V_DS= V_GS, I_D= 1.0mA, Tj= 125ºC

V_DS= V_GS, I_D= 1.0mA, Tj= -55ºC

2.5

1.5

––

4.0

3.0

5.0

––

Gate Threshold Voltage

Gate to Source Leakage

V_GS(th)

V_GS= ±20V, Tj= 25ºC

V_GS= ±20V, Tj= 125ºC

––

±100

––

I_GSS

I_DSS

g_fs

V_DS= 300V, V_GS= 0V, T_j= 25ºC

V_DS= 300V, V_GS= 0V, T_j= 125ºC

––

0.01

5.0

250

μA

Zero Gate Voltage Drain Current

Forward Transconductance

V_DS= 10V, I_D= 35A, T_j= 25ºC

––

Mho

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q_g

Q_gs

Q_gd

V_GS= 10V

V_DS= 150V

I_D= 35A

––

140

250

––

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10V

V_DS= 150V

I_D= 50A

R_G= 4.0Ω, pw= 3us

––

110

125

nsec

Diode Forward Voltage

V_SD

I_F= 50A, V_GS= 0V

––

0.95

1.5

Diode Reverse Recovery Time

Reverse Recovery Charge

t_rr

Q_rr

––

180

1.3

200

––

nsec

μC

I_F= 10A, di/dt = 100A/usec

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C_iss

C_oss

C_rss

V_GS= 0V

V_DS= 25V

f = 1 MHz

––

5000

750

145

––

PIN ASSIGNMENT (Standard)

Available Part Numbers:

Consult Factory

Package

Drain

Pin 1

Source

Pin 2

Gate

Pin 3

TO-254 (M)

TO-254Z (Z)

Pin 2

TO254 (M)

TO254Z (Z)

PIN 3

PIN 2

PIN 1