SFF70N04S.5TX [SSDI]

Power Field-Effect Transistor, 70A I(D), 40V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD0.5, 3 PIN;


型号：	SFF70N04S.5TX
厂家：	SOLID STATES DEVICES, INC
描述：	Power Field-Effect Transistor, 70A I(D), 40V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD0.5, 3 PIN
文件：	总2页 (文件大小：24K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SFF70N04

SERIES

SOLID STATE DEVICES, INC.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

70 AMP / 40 VOLTS

0.010 Ω

DESIGNER'S DATA SHEET

N-CHANNEL

Part Number /Ordering Information

POWER MOSFET

SFF70N04 S.5 TX

Screening : _ = Not Screened

TX = TX Level

TXV = TXV Level

APPLICATION NOTES:

• Low RDS (on) and High Transconductance

= Space Level

•

Excellent High Temperature Stability

Fast Switching Speed

Intrinsic Rectifier

Hermetically Sealed Package

TX, TXV, and Space Level Screening Available

Package: S.5 = SMD.5

MAXIMUM RATINGS

SYMBOL

VALUE

UNITS

Volts

Drain-Source Voltage

Gate-Source Voltage

Volts

E20

Continuous Collector Current

@ T = 25^oC

Amps

@ T = 100^oC

Pulsed Drain Current

140

Amps

Avalanche Current

Repetitive Avalanche Energy

Operating and Storage Temperature

180

T T

J, STG

-55 to +175

107

^oC

Total Device Dissipation @ T = 25^oC

Thermal Resistance,

Junction to Case

1.1

^oC/W

θJC

SMD.5 (S.5)

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00002A

SFF70N04

SERIES

SOLID STATE DEVICES, INC.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

ELECTRICAL CHARACTERISTICS ^4/

Drain - Source Breakdown Voltage

SYMBOL

MIN

TYP

MAX

UNITS

(BR)DSS

(V = 0V, I = 250µA)

Gate Threshold Voltage

(V = V , I = 250µA)

µA

GS (th)

GS DS

Gate - Emitter Leakage Current

(V = 0V, V = E20V)

E100

GSS

Zero Gate Voltage Drain Current

T = 25^oC

DSS

(V = 40V, V = 0V)

T = 125^oC

On-State Drain Current *

(V = 5V, V = 10V)

D(on)

Drain-Source On-State Resistance *

= 10V, I = 30A

T = 25^oC

0.008

0.014

0.011

0.019

0.010

0.017

0.014

0.024

T = 125^oC

Ω

DS(on)

= 4.5V, I = 20A

T = 25^oC

T = 125^oC

Forward Transconductance *

(V = 15V, I = 30A)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate - Source Charge

Gate - Drain Charge

Turn-On Delay Time

Rise Time

2700

600

160

iss

oss

rss

= 25V,

= 0V,

f = 1MHz

100

= 15V,

= 10V,

I = 70A

100

nsec

d(on)

= 15V, I = 70A,

= 10V,

GEN

Turn-Off Delay Time

Fall Time

d(off)

R = 0.2Ω, R = 2.5Ω

Reverse Diode Forward Voltage Drop

(I = 70A, V = 0V)

1.0

1.5

Reverse Diode Reverse Recovery Time

(I = 70A, di/dt = 100A/µs)

100

nsec

NOTES:

Available Part Numbers:

SFF70N04S.5

* Pulse Test: Pulse Width = 300us, Duty Cycle = 2%

1/ For Ordering Information, Price, and Availability, Contact Factory.

2/ Screening per MIL-PRF-19500.

PIN ASSIGNMENT

3/ For Package Outlines Contact Factory.

PACKAGE

Drain

Source

Gate

4/ All Electrical Characteristics @25^oC, Unless Otherwise Specified.

SMD.5

Pin1

Pin 2

Pin 3

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