SFF80N20MDBS [SSDI]
Avalanche Rated N-channel MOSFET; 雪崩额定N通道MOSFET
| 型号： | SFF80N20MDBS |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Avalanche Rated N-channel MOSFET |
| 文件： | 总3页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF80N20 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
80 AMP , 200 Volts, 25 mΩ
Avalanche Rated N-channel
MOSFET
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF80N20 ___ ___ ___
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Features:
Rugged poly-Si gate
Lowest ON-resistance in the industry
Avalanche rated
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
Lead Option 3/
__ = Straight Leads
DB = Down Bend
UB = Up Bend
Package 3/ 4/
M = TO-254
TX, TXV, S-Level screening available
Improved (RDS(ON) QG) figure of merit
N = TO-258
P = TO-259
Z = TO-254Z
Maximum Ratings5/
Symbol
VDSS
Value
Units
V
Drain - Source Voltage
200
±20
±30
continuous
transient
Gate – Source Voltage
VGS
ID1
V
A
Max. Continuous Drain Current (package
limited)
55
@ TC = 25ºC
@ TC = 25ºC
@ TC = 175ºC
ID2
ID3
80
48
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
A
A
@ L= 0.1 mH
@ L= 0.1 mH
@ TC = 25ºC
IAR
60
EAS
EAR
1500
50
Single and Repetitive Avalanche Energy
mJ
Total Power Dissipation
150
W
PD
Operating & Storage Temperature
-55 to +175
ºC
T
OP & TSTG
Maximum Thermal Resistance
(Junction to Case)
1.0
(typ.0.75)
RθJC
ºC/W
TO-254 (M)
TO-254Z (Z)
TO-258 (N)
TO-259 (P)
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ For lead bending options / pinout configurations - contact factory.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics @25oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00129H
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF80N20 Series
Electrical Characteristics5/
Symbol Min
Typ Max Units
Drain to Source Breakdown Voltage
V
GS = 0V, ID = 250μA
BVDSS
200
220
––
V
Drain to Source On State
Resistance
V
V
GS = 10V, ID = 48A, Tj= 25oC
––
––
––
25
50
65
30
65
––
GS = 10V, ID = 48A, Tj=125oC
RDS(on)
mΩ
VGS = 10V, ID = 48A, Tj= 175oC
VDS = VGS, ID = 4.0mA, Tj= 25oC
VDS = VGS, ID = 4.0mA, Tj= 125oC
VDS = VGS, ID = 4.0mA, Tj= -55oC
2.5
1.5
––
4.5
3.6
5
5.0
––
6
Gate Threshold Voltage
Gate to Source Leakage
VGS(th)
V
VGS = ±20V, Tj= 25oC
––
––
10
30
±100
––
IGSS
nA
VGS = ±20V, Tj= 125oC
V
DS = 200V, VGS = 0V, Tj = 25oC
VDS = 200V, VGS = 0V, Tj = 125oC
DS = 200V, VGS = 0V, Tj = 150oC
DS = 10V, ID = 48A, Tj = 25oC
GS = 10V
––
––
––
0.01
2.5
25
25
150
––
μA
μA
μA
Zero Gate Voltage Drain Current
Forward Transconductance
IDSS
gfs
V
V
25
50
––
Mho
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
V
Qg
Qgs
Qgd
––
––
––
150
45
75
250
65
120
VDS = 100V
nC
ID = 48A
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
V
V
GS = 10V
DS = 100V
ID = 48A
td(on)
tr
td(off)
tf
––
––
––
––
50
50
110
50
75
75
135
75
nsec
V
RG = 4.0Ω, pw= 3us
Diode Forward Voltage
IF = 48A, VGS = 0V
VSD
––
0.90
1.5
IF = 10A, di/dt = 100A/usec
IF = 10A, di/dt = 100A/usec
IF = 10A, di/dt = 100A/usec
IF = 25A, di/dt = 100A/usec
IF = 25A, di/dt = 100A/usec
IF = 25A, di/dt = 100A/usec
trr1
Irm1
Qrr1
trr2
Irm2
Qrr2
––
––
––
––
––
––
190
11
1
310
17
2.5
250
––
––
––
––
––
nsec
A
μC
nsec
A
Diode Reverse Recovery Time
Reverse Recovery Charge
μC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS = 0V
Ciss
Coss
Crss
––
––
––
5300
1050
175
––
––
––
VDS = 25V
f = 1 MHz
pF
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00129H
DOC
SFF80N20 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
TO-254 (M)
TO-254Z (Z)
TO-258 (N)
TO-259 (P)
PIN ASSIGNMENT (Standard)
Package
TO-254 (M)
TO-254Z (Z)
TO-258 (N)
TO-259 (P)
Drain
Pin 1
Pin 1
Pin 1
Pin 1
Source
Pin 2
Pin 2
Pin 2
Pin 2
Gate
Pin 3
Pin 3
Pin 3
Pin 3
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00129H
DOC
相关型号：
SFF80N20MTXV
Power Field-Effect Transistor, 55A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN
SSDI
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