SFF9140-28S [SSDI]

Power Field-Effect Transistor,;


型号：	SFF9140-28S
厂家：	SOLID STATES DEVICES, INC
描述：	Power Field-Effect Transistor,
文件：	总2页 (文件大小：158K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SFF9140-28

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4470 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

-18 AMP

-100 Volts

0.20 Ω

P-Channel

POWER MOSFET

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

SFF9140 -28 __

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└

Features:



Rugged Construction with Poly Silicon Gate

Low R_DS(ON)and High Transconductance

Excellent High Temperature Stability

Very Fast Switching Speed

Fast Recovery and Superior dv/dt Performance

Increased Reverse Energy Capability

Low Input and Transfer Capacitance for Easy Paralleling

Hermetically Sealed

Package

-28 = LCC28

TX, TXV, and Space Level Screening Available.

Consult Factory.



Replaces IRF9140 Types

Maximum Ratings^3/

Drain – Source Voltage

Gate – Source Voltage

Symbol

V_DS

Value

-100

±20

Unit

V_GS

T_C= 25ºC

T_C= 100ºC

Continuous Drain Current

I_D

Operating & Storage Temperature

-55 to +150

3.5

ºC

_OP& T_STG

R_JC

Thermal Resistance, Junction to Case

ºC/W

T_C= 25ºC

T_C= -55ºC

Total Device Power Dissipation

P_D

Single Pulse Avalanche Energy

Repetitive Avalanche Energy

500

E_AS

E_AR

12.5

NOTES:

LCC28

*Pulse Test: Pulse Width = 300 µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @25^oC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FP0011C

DOC

SFF9140-28

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4470 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Electrical Characteristics^3/

Symbol

Min

Typ Max Unit

Drain to Source Breakdown Voltage

(V_GS= 0 V, I_D= 1 mA)

BV_DSS

-100

––

Drain to Source On State Resistance

(V_GS= -10 V)

I_D= 11 A

I_D= 18 A

––

0.15

––

0.20

0.23

R_DS(ON)

∆BV_DSS

∆T_J

Temperature Coefficient of Breakdown Voltage

––

-0.087

––

Gate Threshold Voltage

(V_DS= V_GS, I_D= -250 µA)

V_GS(th)

g_fs

-2.0

6.2

––

-4.0

––

Forward Transconductance

(V_DS≥ 15 V, I_DS= 11 A)

S(Ʊ)

Zero Gate Voltage Drain Current

(V_DS= 80% rated voltage, V_GS= 0 V)

T_A= 25°C

T_A= 125°C

I_DSS

––

250

µA

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

––

-100

100

At Rated V_GS

I_GSS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

_GS= -10 V

Q_g

Q_gs

Q_gd

––

50% rated V_DS

I_D= 18 A

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

_DD= 50%

t_d(on)

t_r

t_d(off)

t_f

––

rated V_DS

rated I_D

R_G= 9.1 Ω

Diode Forward Voltage

(I_S= Rated I_D,V_GS= 0 V, T_J= 25°C)

V_SD

––

-4.2

T_J= 25°C

I_F= 10 A

di/dt = 100 A/µsec

Diode Reverse Recovery Time

Reverse Recovery Charge

t_rr

Q_RR

––

170

––

280

3.6

µC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

_GS= 0 V

C_iss

C_oss

C_rss

––

1400

600

200

––

_DS= -25 V

f = 1 MHz

CASE OUTLINE: LCC28

PIN OUT: SOURCE: 1, 15 – 28

DRAIN: 5 – 11

GATE: 2, 3, 13, 14

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FP0011C

DOC

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