SFT10015/3 [SSDI]

Power Bipolar Transistor, 50A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, HERMETIC SEALED PACKAGE-2;


型号：	SFT10015/3
厂家：	SOLID STATES DEVICES, INC
描述：	Power Bipolar Transistor, 50A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, HERMETIC SEALED PACKAGE-2 局域网开关晶体管
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中文：	中文翻译
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SFT10015

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

50 AMP

NPN DARLINGTON

TRANSISTOR

400 VOLTS

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

SFT10015 __ __

Screening ^2/

Features:

│

└



BV_CEO400 Volts

__ = Not Screened

Low Saturation Voltage

TX = TX Level

TXV = TXV Level

S = S Level

200^oC Operating Temperature

Hermetically Sealed, Isolated Package

TX, TXV, S-Level Screening Available. Consult Factory.

Application Notes:

Package

SFT10015 Darlington Transistor is a direct replacement of

Motorola MJ10015. It is designed for high voltage, high

speed, power switching in inductive circuits where fall time is

critical. It is particularly suited for line operated switchmode

applications such as:

/3 = TO-3

Switching Regulators

Inverters

Solenoid and Relay Drives

Motor Controls

Deflection Circuits

Maximum Ratings

Symbol

Value

Units

Collector – Emitter Voltage

Emitter – Base Voltage

V_CEO

V_CEV

V_EB

400

600

Volts

Continuous

Peak

I_C

I_CM

Collector Current

Amps

Continuous

Peak

I_B

I_BM

Base Current

Total Power Dissipation

@ T_C= 25ºC

@ T_C= 100ºC

250

143

1.43

Watts

W/ºC

P_D

Derate above 50ºC

Operating & Storage Temperature

T_J& T_STG

R_0JC

-65 to +200

ºC

Maximum Thermal Resistance

(Junction to Case)

0.7

ºC/W

NOTES:

TO-3(/3)

1/ For ordering information, price, operating curves, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0126B

DOC

SFT10015

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Typ

Electrical Characteristics, T_c= 25 ºC

Symbol

V_CEO(sus)

Min

Max

Units

Volts

Collector – Emitter Sustaining Voltage

(I_C= 100 mA, I_B= 0, V_CLAMP= 400 V)

400

––

Collector Cutoff Current

(V_CEV= 600 V, V_BE(off)= 1.5V)

I_CEV

I_EBO

––

0.25

350

Emitter Cutoff Current

(V_EB= 2V, I_C= 0)

160

DC Current Gain*

(V_CE= 5V)

I_C= 10 A

I_C= 20 A

I_C= 40 A

––

185

125

––

H_FE

Collector-Emitter Saturation Voltage*

Base-Emitter Saturation Voltage*

Diode Forward Voltage

I_C= 20 A, I_B= 1 A

I_C= 50 A, I_B= 10 A

––

1.3

2.1

2.2

5.0

V_{CE (SAT)}

Volts

I_C= 20A, I_B= 1A,

T_C= 25ºC

V_{BE (SAT)}

V_F

––

2.05

2.0

2.75

5.0

Volts

I_F= 20 A

5V, 50A

20V, 8.75A

100V, 0.3A

SOA₁

SOA₂

SOA₃

Safe Operating Area, DC (1 sec)

––

Output Capacitance

(V_CB= 10V, I_E= 0A, f = 1MHz)

C_ob

250

750

Delay Time

t_d

t_r

––

0.15

1.0

0.3

1.2

µs

t_(on)

Switching Times, Resistive Load

_CC= 250 V, I_C= 20 A_,I_B1= 1 A, V_{BE (off)}= 5 V,

Rise Time

Storage Time

Fall Time

t_s

t_f

––

2.2

0.95

2.5

1.2

μs

µs

tp = 25s, Duty Cycle ≤ 2%

t_(off)

Storage Time

Crossover Time

Switching Times, Inductive Load, Clamped

t_sv

t_c

––

µs

I_C= 20 A(pk), V_CLAMP= 250 V,

7.3

I_B1= 1 A, V_{BE (off)}= 5 V, T_C= 25ºC

NOTES:

Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%

CASE OUTLINE: TO-3

Pin Out:

Case – Collector

1 – Base

2 – Emitter

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0126B

DOC

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