SFT2907A/18TXV [SSDI]

Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, Metal, 3 Pin,;
SFT2907A/18TXV
型号: SFT2907A/18TXV
厂家: SOLID STATES DEVICES, INC    SOLID STATES DEVICES, INC
描述:

Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, Metal, 3 Pin,

文件: 总3页 (文件大小:172K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SFT2907A  
Series  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
600 mA 60 Volts  
PNP High Speed Transistor  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
SFT2907A __ __  
Screening 2/ __= Commercial  
TX= TX Level  
Features:  
High Speed Switching Transistor  
TXV= TXV Level  
S= S Level  
Multiple Devices Reduce Board Space  
High Power Dissipation: Up to 500 mW  
Replacement for 2N2907A and 2N2907AUA  
TX, TXV, S-Level Screening Available 2/  
NPN Complimentary Parts Available (SFT2222A)  
Package  
-4 = LCC4  
/18 = TO-18  
/46 = TO-46  
Maximum Ratings3/  
Symbol  
Value  
Units  
Collector – Emitter Voltage  
Collector – Base Voltage  
Emitter – Base Voltage  
VCEO  
VCBO  
VEBO  
IC  
60  
Volts  
Volts  
Volts  
mA  
60  
5
Continuous Collector Current  
600  
Power Dissipation @ TA= 25ºC  
PD  
500  
mW  
ºC  
Operating & Storage Temperature  
Maximum Thermal Resistance (Junction to PCB)  
T
OP & Tstg  
RθJA  
-65 to +200  
325  
ºC/W  
Notes:  
TO-46  
LCC4  
TO-18  
1/ For ordering information, price, and availability contact  
factory.  
2/ Screening based on MIL-PRF-19500. Screening flows  
available on request.  
3/ Unless otherwise specified, all electrical characteristics  
@ 25ºC.  
4/ Pulse test: pulse width= 300µsec, duty cycle= 2%  
PIN ASSIGNMENT  
Collector  
Pin 1  
Available Part Numbers:  
Package  
-4  
Function  
Normal  
Normal  
Normal  
Emitter  
Pin 2  
Base  
Pin 3  
Pin 3  
Pin 3  
SFT2907A-4  
SFT2907A/18  
SFT2907A/46  
/18  
Pin 1  
Pin 2  
/46  
Pin 1  
Pin 2  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: TR0022C  
DOC  
SFT2907A  
Series  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Electrical Characteristic 3/  
Collector – Emitter Sustaining Voltage  
Collector Cutoff Current  
Symbol  
Min  
60  
Max  
––  
Units  
Volts  
nA  
IC= 10 mA  
VCE= 50 V  
BVCEO  
ICES  
––  
50  
VCB= 50 V  
VCB= 60 V  
VCB= 50 V, TA= 150ºC  
0.01  
10  
10  
Collector Cutoff Current  
Emitter Cutoff Current  
––  
ICBO  
IEBO  
µA  
µA  
VEB= 4.0 V  
VEB= 5.0 V  
0.05  
10  
––  
VCE= 10 V, IC= 0.1 mA  
VCE= 10 V, IC= 1.0 mA  
VCE= 10 V, IC= 10 mA  
VCE= 10 V, IC= 150 mA  
VCE= 10 V, IC= 500 mA  
75  
100  
100  
100  
50  
––  
450  
300  
––  
DC Forward Current Transfer Ratio 4/  
HFE  
VCE= 10 V, IC= 10 mA, TA= -55ºC  
50  
––  
Small-signal Forward Current Transfer  
Ratio  
VCE= 10 V, IC= 1.0 mA, f= 1 kHz  
100  
hfe  
IC= 150 mA, IB= 15 mA  
IC= 500 mA, IB= 50 mA  
––  
––  
0.4  
1.6  
Collector – Emitter Saturation Voltage 4/  
VCE(Sat)  
Volts  
IC= 150 mA, IB= 15 mA  
IC= 500 mA, IB= 50 mA  
0.6  
––  
1.3  
2.6  
Base – Emitter Saturation Voltage 4/  
Frequency Transition  
VBE(Sat)  
fT  
Volts  
MHz  
pF  
VCE= 20 V, IC= 20 mA, f= 100 MHz  
VCB= 10 V, f= 1 MHz  
200  
––  
––  
8.0  
30  
Output Capacitance  
cob  
VEB= 2 V, f= 1MHz  
––  
Input Capacitance  
cib  
pF  
ton  
toff  
VCC= 30 V, IC= 150 mA, IB1= 15 mA  
VCC= 30 V, IC= 150 mA, IB1= IB2= 15 mA, VBE(off)= 3 V  
––  
––  
45  
300  
Switching Times A/  
ns  
A/  
ton  
toff  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: TR0022C  
DOC  
SFT2907A  
Series  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
LCC4 (-4)  
TO-18 (/18)  
TO-46 (/46)  
.105  
.080  
.500 MIN  
.019  
3x Ø  
.016  
.105  
Ø
.095  
3
2
.215  
.187  
Ø
Ø
.209  
.183  
45°  
1
.046  
.036  
.048  
.028  
.030 MAX  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: TR0022C  
DOC  

相关型号:

SFT2907A/46

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-46, TO-46, 3 PIN
SSDI

SFT2907A/46S

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-46, TO-46, 3 PIN
SSDI

SFT2907A/46TX

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-46, TO-46, 3 PIN
SSDI

SFT2907A/46TXV

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-46, TO-46, 3 PIN
SSDI

SFT2907A2

Dual Microminiature Package 600 mA 60 Volts Dual PNP Transistor
SSDI

SFT2907A2GW

Dual Microminiature Package 600 mA 60 Volts Dual PNP Transistor
SSDI

SFT2907A2GWS

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, MICRO MINIATURE PACKAGE-6
SSDI

SFT2907A2GWTX

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, MICRO MINIATURE PACKAGE-6
SSDI

SFT2907A2GWTXV

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, MICRO MINIATURE PACKAGE-6
SSDI

SFT2907A2_1

Dual PNP Transistor
SSDI

SFT2907A_1

PNP High Speed Transistor
SSDI

SFT3

SUPER FAST RECTIFIER DIODES
EIC