SFT5004JUB [SSDI]
10 AMP 150 VOLTS NPN HIGH SPEED POWER TRANSISTOR; 10安培150伏NPN高速功率晶体管
| 型号： | SFT5004JUB |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 10 AMP 150 VOLTS NPN HIGH SPEED POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT5002/SFT5004
SERIES
SOLID STATE DEVICES, INC.
14701 Firestone Blvd. * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
10 AMP
DESIGNER'S DATA SHEET
150 VOLTS
NPN HIGH SPEED
POWER TRANSISTOR
1/
Part Number /Ordering Information
SFT5002 J UB TX
SFT5004 J UB TX
2/
FEATURES
Screening : _ = Not Screened
• BV
120V min.
TX = TX Level
TXV = TXV Level
CEO
• Fast Switching
S
= Space Level
• High Frequency
3/
Lead Bend: _ = Straight
• High Linear Gain, Low Saturation Voltage.
• Radiation Tolerant
UB = Up Bend
DB = Down Bend
3/
• 200oC Operating, Gold Eutectic Die Attach.
• High Current, High Voltage Version of
2N5002 and 2N5004
Package:
J
= TO-257
/59 = TO-59
MAXIMUM RATINGS
SYMBOL
VALUE
UNITS
Collector-Base Voltage
V
V
V
150
Volts
Volts
Volts
Amps
Amps
oC
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
120
6.0
Continuous Collector Current
Base Current
I
I
10
2
C
B
Operating and Storage Temperature
T T
J, STG
-65 to +200
Total Device Dissipation @ T # 25oC
50
W
C
P
D
Derate above 25oC
0.33
W/oC
oC/W
Thermal Resistance, Junction to Case
R
3.0
ΘJC
TO-59 (/59)
Available Part Numbers:
TO-257 (J)
SFT5002/59
SFT5002J
SFT5004/59
SFT5004J
SFT5002JUB
SFT5002JDB
SFT5004JUB
SFT5004JDB
1
3
2
PIN ASSIGNMENT
CODE FUNCTION
Normal
PIN 1
Collector Emitter
PIN 2
PIN 3
Base
-
NOTE: All specifications are subject to change without notification.
DATA SHEET #: TR0020C
SCD's for these devices should be reviewed by SSDI prior to release.
SFT5002/SFT5004
SERIES
SOLID STATE DEVICES, INC.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
4/
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage
SYMBOL
MIN
120
MAX
-
UNITS
BV
BV
BV
V
V
V
CEO
CBO
EBO
DC
DC
DC
(I = 100mA)
C
Collector-Base Sustaining Voltage
150
6
-
-
(I = 200µA)
C
Emitter-Base Sustaining Voltage
(I = 200µA)
E
Collector Cutoff Current
(V = 60V , V = 2V , T = 150oC)
I
-
-
500
50
µA
µA
CEV
CEO
DC
DC
CE
DC
BE
DC
C
I
(V = 40V
)
CE
DC
Collector Cutoff Current
V
= 60V
-
-
1.0
1.0
µA
CE
CE
DC
DC
DC
DC
I
CES
V
= 100V
mA
Emitter Cutoff Current
V
V
= 5V
= 6V
-
-
1.0
1.0
µA
mA
EB
EB
DC
DC
DC
DC
I
EBO
DC Current Gain*
20
30
20
15
50
70
40
22
(SFT5002)
I = 50mA , V = 5V
C DC CE
DC
DC
DC
DC
DC
DC
DC
DC
150
200
I = 2.5A , V = 5V
C
DC
CE
I = 5.0A , V = 5V
C
DC
CE
(SFT5004)
I = 10A , V = 5V
C DC CE
H
FE
I = 50mA , V = 5V
C
C
DC
DC
DC
DC
CE
CE
CE
CE
I = 2.5A , V = 5V
I = 5.0A , V = 5V
C
I = 10A , V = 5V
C
Collector-Emitter Saturation
Voltage *
I = 2.5A , I = 250mA
-
-
0.75
1.5
C
C
DC
DC
B
B
DC
DC
V
V
V
V
CE(SAT)
BE(SAT)
DC
I = 5.0A , I = 500mA
Base-Emitter Saturation
Voltage *
I = 2.5A , I = 250mA
-
1.45
2.2
C
DC
B
DC
DC
DC
I = 5.0A , I = 500mA
C
DC
B
Current Gain Bandwidth Product
(I = 500mA = 5V f = 10MHz)
SFT5002
SFT5004
60
70
-
-
f
MHz
pF
T
V
C
DC , CE
DC,
Output Capacitance
C
t
-
250
ob
(V = 10V , I = 0, f = 1MHz)
CB
DC
E
On Time
Off Time
-
-
500
1.3
ns
on
V
= 30V , I = I = 500mA
,
DC
CC
DC B1
BE(off)
B1
I = 5A , V
= 3.7V , R = 6 S
DC L
C
DC
t
off
µs
NOTES:
Package Outline
Part Number
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
Document
60-0149-059
60-0149-504
60-0149-504
60-0149-504
SFT5002/59 / SFT5004/59
SFT5002J / SFT5004J
3/ For Package Outlines Contact Factory.
4/ T = 25oC, Unless Otherwise Specified.
C
SFT5002JDB / SFT5004JDB
SFT5002JUB / SFT5004JUB
*
Pulse Test: Pulse Width = 300us, Duty Cycle = 2%
相关型号：
SFT5004MUB
Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-254, 3 PIN
SSDI
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