SFT5151TX [SSDI]
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN;
| 型号： | SFT5151TX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN 开关 晶体管 |
| 文件： | 总3页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT5151 and SFT5153
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
10 AMP
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
POWER TRANSISTORS
SILICON PNP
SFT5151 __ __
SFT5153 __ __
100 VOLTS
10 WATTS
Screening 2/ __ = Not Screened
TX = TX Level
│
│
│
│
│
└
└
TXV = TXV Level
Features:
Radiation Tolerant
S
= S Level
Package 3/
Fast Switching, 500 nsec max ton
High Frequency, Typical ft = 100 MHz
BVCEO 80 Volts Min
High Linear Gain, Low Saturation Voltage
200°C Operating Temperature
Designed for Complementary Use with SFT5152 and
SFT5154
__ = TO-5
S.5 = SMD.5
Replacement for 2N5151 and 2N5153
TX, TXV, S-Level Screening Available2/ - Consult Factory
Maximum Ratings
Symbol
Value
Units
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
VCEO
VCBO
VEBO
IC
80
100
5.5
10
Volts
Volts
Volts
Amps
Amps
Base Current
IB
2.5
Total Device Dissipation @ TC = 50°C
Derate above 50°C
10
66.6
W
mW/°C
PD
Operating & Storage Temperature
Maximum Thermal Resistance
Top & Tstg
RθJC
-65 to +200
15
°C
Junction to Case
°C/W
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
TO-5
SMD.5
1/ For Ordering Information, Price, Operating Curves, and
Availability Contact Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics
@25°C.
Available parts:
SFT5151, SFT5151S.5
SFT5153, SFT5153S.5
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0109C
DOC
SFT5151 and SFT5153
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic 4/
Symbol
Min
Max
Units
Collector– Emitter Breakdown Voltage*
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Cutoff Current
IC = 100mA
IC = 200µA
IE = 200µA
BVCEO
BVCBO
BVEBO
ICEO
80
100
5.5
––
––
––
––
50
25
Volts
Volts
Volts
µA
VCE = 40V
Collector – Cutoff Current
V
CE = 60V, VBE = 2V, TA = 150°C
ICEV
––
µA
VCE = 60V
1.0
1.0
µA
mA
Collector – Cutoff Current
Emitter – Cutoff Current
ICES
IEBO
––
––
VCE = 100V
VEB = 4V
1.0
1.0
µA
mA
V
EB = 5.5V
CE = 5V, IC = 50mA
CE = 5V, IC = 2.5A
DC Current Gain *
V
V
20
30
15
20
50
70
25
40
––
250
––
––
––
250
––
––
SFT5151
V
CE = 5V, IC = 2.5A, TA = -55°C
VCE = 5V, IC = 5A
hFE
––
V
CE = 5V, IC = 50mA
VCE = 5V, IC = 2.5A
CE = 5V, IC = 2.5A, TA = -55°C
SFT5153
V
V
CE = 5V, IC = 5A
Collector – Emitter Saturation Voltage *
Base – Emitter Saturation Voltage *
IC = 2.5A, IB = 250mA
IC = 5.0A, IB = 500mA
––
––
0.75
1.5
VCE(Sat)
VBE(Sat)
hfe
Volts
Volts
––
IC = 2.5A, IB = 250mA
IC = 5.0A, IB = 500mA
––
––
1.45
2.2
VCE = 5V, IC = 0.1A,
20
50
SFT5151
SFT5153
Common Emitter small signal gain
Current Gain Bandwidth Product
––
––
f= 1kHz
SFT5151
SFT5153
60
70
VCE = 5V, IC = 0.5A,
f = 20MHz
fT
MHz
Output Capacitance
V
CB = 10V, IE = 0A, f = 1MHz
cob
––
––
250
pF
Base – Emitter Voltage*
VCE = 5V, IC = 2.5A VBE(ON)
1.45
Volts
V
CE = 5V, IC = 2.0A, 1 sec
SOA1
SOA2
SOA3
Safe Operating Area
VCE = 32V, IC = 310 mA, 1 sec
VCE = 80V, IC = 12.5mA, 1 sec
––
––
––
Delay Time
Rise Time
Storage Time
Fall Time
V
CC = 30V, VEB(Off) = 3.7V
tON
tOFF
500
1500
––
––
nsec
µsec
IC = 5A
tS
tf
1.4
0.5
V
EB(Off) = 3.7V, IB1 = IB2 = 0.5A,
RL = 6 Ohms
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0109C
DOC
SFT5151 and SFT5153
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
TO-5
PIN ASSIGNMENT
Package
TO-5
Pin 1
Pin 2
Pin 3 (Case)
Emitter
Base
Collector
SMD.5
.408
.392
.304
.288
.304
.288
.135
.115
.020
.010
.030 MIN
3x
.030 MIN
.103
.087
2x
2x .010
MAX
.233
.217
.128
.112
PIN ASSIGNMENT
Package
SMD.5
Pin 1
Pin 2
Pin 3
Collector
Emitter
Base
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0109C
DOC
相关型号：
SFT5151TXV
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
SSDI
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