SFT5553AJSBRS [SSDI]

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SFT5553AJSBRS
型号: SFT5553AJSBRS
厂家: SOLID STATES DEVICES, INC    SOLID STATES DEVICES, INC
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SFT5553A/G  
Series  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
5 AMP  
100 Volts  
PNP Power Transistor  
SFT5553A __ __ __  
Screening 2/ __ = Not Screen  
TX = TX Level  
Features:  
BVCEO 80V  
Fast Switching  
Very High Gain  
Low Saturation Voltage  
200 ºC Operating Temperature  
Gold Eutectic Die Attach  
TX, TXV, S-Level Screening Available  
TXV = TXV Level  
S = S Level  
Polarity __ = Normal  
R = Reverse  
Package /G = Cerpack  
Maximum Ratings  
Symbol  
BVCBO  
Value  
100  
Units  
Volts  
Volts  
Collector – Base Voltage  
Collector – Emitter Voltage  
BVCEO  
80  
Emitter – Base Voltage  
Continuous Collector Current  
Base Current  
BVEBO  
IC  
6.0  
5.0  
2.0  
Volts  
Amps  
Amps  
IB  
Power Dissipation @ TC 100ºC  
Derate above 100ºC  
40  
0.4  
W
W/ ºC  
PD  
Operating & Storage Temperature  
Thermal Resistance, Junction to Case  
Top & Tstg  
RθJC  
-65 to +200  
1.8  
ºC  
ºC/W  
Cerpack Outline:  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: TR0015E  
SFT5553A/G  
Series  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Electrical Characteristics 3/  
Symbol Min  
Max Units  
Collector – Emitter Breakdown Voltage  
IC = 100 µADC  
IC = 100 µADC  
IE = 20 µADC  
80  
100  
6
––  
––  
Volts  
Volts  
Volts  
µA  
BVCEO  
BVCBO  
BVEBO  
IEBO  
Collector – Base Breakdown Voltage  
Emitter – Base Breakdown Voltage  
––  
VEB = 5 VDC  
––  
––  
––  
10  
Emitter – Cutoff Current  
Collector – Cutoff Current  
VCB = 100 VDC  
10  
µA  
ICBO  
VCE = 80 VDC  
Collector – Cutoff Current  
DC Current Gain *  
100  
µA  
ICEO  
V
CE = 1.1VDC, IC = 1.0ADC  
VCE = 1.32VDC, IC = 2.5ADC  
VCE = 2.2VDC, IC = 5.0ADC  
80  
55  
25  
220  
150  
120  
––  
HFE  
Collector – Emitter Saturation Voltage *  
Base – Emitter Saturation Voltage *  
Base – Emitter On Voltage *  
IC = 2.5ADC, IB = 0.2ADC  
IC = 2.5ADC, IB = 0.2ADC  
––  
––  
––  
40  
––  
0.5  
1.1  
VDC  
VDC  
VDC  
MHz  
pF  
VCE(SAT)  
VBE(SAT)  
VBE(ON)  
fT  
IC = 2.5ADC, VCE = 1.3VDC  
0.95  
––  
IC = 50mADC, VCE = 10VDC, f = 20MHz  
VCB = 30VDC, IE = 0ADC, f = 1.0MHz  
Current Gain Bandwidth Product  
120  
Output Capacitance  
Turn On Time  
cob  
––  
––  
200  
nsec  
nsec  
t(on)  
t(off)  
VCC = 200VDC, IC = 1.0ADC  
,
IB1 = IB2 = 100mADC, RB1 = RB2 = 40  
Turn Off Time  
1500  
NOTES:  
*
Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%  
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.  
1/ For Ordering Information, Price, and Availability Contact Factory.  
2/ Screening per MIL-PRF-19500  
PIN ASSIGNMENT (Standard)  
Available Part Numbers:  
Code Function  
Base  
Collector  
Collector  
PIN 1  
Emitter  
Base  
PIN 2  
Base  
Emitter  
SFT5553A/G  
SFT5553A/GR  
---  
R
Normal  
Reverse  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: TR0015E  

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