SFT6678M [SSDI]
15 AMPS 400 Volts NPN High Speed Power Transistor; 15安培400伏NPN高速功率晶体管
| 型号： | SFT6678M |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 15 AMPS 400 Volts NPN High Speed Power Transistor |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT6678 SERIES
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
15 AMPS
400 Volts
NPN High Speed
Power Transistor
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFT6678 M __ TX
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Application Notes:
Screening 2/ __ = Not Screen
TX = TX Level
• Replaces Industry Standard 2N6678
• Designed for High Voltage, High Speed,
Power Switching Applications Such as:
• Off-Line Supplies
• Converter Circuits
• Pulse Width Modulated Regulators
• Motor Controls
TXV = TXV Level
S = S Level
Lead Bend 3/ 4/ _ = Straight Leads
UB = Up Bend
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+
+
DB = Down Bend
Package 3/ M = TO-254
Z = TO-254Z
• Deflection Circuits
/3 = TO-3
Maximum Ratings
Symbol
Value
Units
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
400
650
VCEO
VCBO
VEBO
IC
Volts
Volts
Volts
Amps
Amps
°C
8.0
15
Continuous Collector Current
5.0
Continuous Base Current
IB
Operating and Storage Temperature
-65 to +200
TJ, TSTG
175
1.0
Total Power Dissipation @ TC=25°C
Derate above 25°C
W
W/°C
PD
Maximum Thermal Resistance
(Junction to Case)
1.0
R0JC
ºC/W
TO-254 (M)
TO-254 (Z)
TO-3 (/3)
Available Part Numbers:
SFT6678/3 SFT6678M
PIN ASSIGNMENT (Standard)
SFT6678Z
Package
TO-3 (/3)
Collector
Case
Emitter
Pin 2
Base
Pin 3
Pin 3
Pin 3
SFT6678MDB SFT6678ZDB
SFT6678MUB SFT6678ZUB
Pin 1
Pin 1
Pin 2
Pin 2
TO-254 (M)
TO-254 (Z)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0019C
DOC
SFT6678 SERIES
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Symbol
Min
Max
Units
TC=25°C
TC=100°C
Collector Cutoff Current
VCE=650VDC, VBE(off) =1.5VDC
-
-
0.1
1.0
mA
ICEV
Collector – Base Leakage Current
VCB =650V
-
-
1
2
-
mA
mA
ICBO
IEBO
(VEB = 8V, IC = 0)
Emitter Cutoff Current
Collector-Emitter Sustaining Voltage
VCEO(sus)
VDC
400
(I = 200mA, I = 0)
C
B
DC Current Gain *
HFE1
HFE2
HFE3
VCE=3V, 1C=15A, TA= 25°C
VCE=3V, 1C=1A, TA= 25°C
VCE=3V, 1C=15A,TA= -55°C
8
15
4
-
-
-
Base-Emitter Saturation Voltage *
(IC = 15ADC, IB = 3ADC)
-
1.5
VDC
VDC
VBE (SAT)
VCE (SAT)
(TC = 25°C)
(TC = 100°C)
1.5
2.0
Collector-Emitter Saturation Voltage *
(IC = 15A, IB = 3A)
Second Breakdown
(V
CC
= 11.7V)
= 20V)
= 100V)
IS/b1
IS/b2
IS/b3
15.0
8.75
0.3
-
-
-
A
A
A
o
(V
(t = 1.0 sec, T = 25 C)
C
CC
(V
CC
Reverse Bias Second Breakdown
o
15.0
-
A
RBSOA
(V
BE (off)
= 1 to 6V, V
= 450V, T < 100 C)
CLAMP
C
Current Gain
|hFE
Cob
|
3
10
(I = 1A, V = 10V
f = 5MHz)
C
CE DC,
Output Capacitance
150
500
pF
(V
CB
= 10V
f = 0.1MHz)
DC ,
(VCC = 200VDC , IC = 15ADC
,
0.1
0.6
2.5
0.5
Delay Time
Storage Time
Rise Time
td
ts
tr
tf
IB1 = IB2 = 3ADC
,
––
––
msec
msec
tP = 50 msec, Duty Cycle < 2%
VB = 6VDC , RL = 13.5W)
Fall Time
––
0.5
Cross Over Time
(IC = 15 A(pk), VCLAMP = 450V, IB1 = 3 A, VBE(off) = 6V)
tc
NOTES:
* Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines Contact Factory.
4/ Up and Down Bend Configurations Available for M and Z (TO-254 and TO-254Z) Packages Only.
5/ All Electrical Characteristics @ 25oC, Unless Otherwise Specified.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0019C
DOC
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