SFT8600S.5 [SSDI]
NPN Transistor; NPN晶体管
| 型号： | SFT8600S.5 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | NPN Transistor |
| 文件： | 总2页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT8600S.5
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
1 AMP
1000 Volts
NPN Transistor
DESIGNER’S DATA SHEET
FEATURES:
· BVCEO minimum 400 volts
· Very Low Saturation Voltage
· Very Low Leakage
· High Gain from 20 mA to 250 mA
· 200° C Operating, Gold Eutectic Die Attach
· Superior Performance over JEDEC 2N5010-15 Series
· High Speed Switching tf = 0.4mS TYP
Maximum Ratings
Symbol
Value
Units
400
1000
Collector – Emitter Voltage
(RBE = 1KW)
VCEO
VCER
V
1000
6
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
VCBO
VEBO
IC
V
V
1
A
Base Current
100
IB
mA
Total Device Dissipation @ TC = 25º C
Derate above 175º C
5.0
200
W
mW/ºC
PD
Operating and Storage Temperature
-65 to +200
5
ºC
Tj, Tstg
R?JC
ºC/W
Thermal Resistance, Junction to Case
CASE OUTLINE: SMD.5
.304
.288
.020
.010
.103
2x
3x
.030 MIN
.087
All dimensions are in inches
Tolerances:
(unless otherwise specified)
XX: ±0.01”
.128
.112
.030 MIN
XXX: ±0.005”
.408
.392
.233
.217
PACKAGE OUTLINE:
SMD.5
PINOUT:
2x .010
PIN 1: COLLECTOR
PIN 2: EMITTER
PIN 3: BASE
MAX
.304
.288
.145
.115
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0083A
DOC
SFT8600S.5
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic
Symbol
Min
Max
Units
Collector – Emitter Breakdown Voltage
(IC= 10mAdc)
(IC= 20mAdc, RBE = 1KW)
400
1000
BVCEO
BVCER
––
V
Collector–Base Breakdown Voltage
(IC= 20mAdc)
1000
6
––
––
V
V
BVCBO
BVEBO
Emitter–Base Breakdown Voltage
(IE= 20mAdc)
Collector Cutoff Current
(VCB= 800V)
(VCB= 800V @ TC= 150°)
10
500
––
µAdc
ICBO
Collector Cutoff Current
(VCE= 400 Vdc)
10
1
––
––
ICEO
IEBO
mAdc
mAdc
Emitter Cutoff Current
(VEB= 4V)
DC Current Gain*
(IC= 100mAdc, VCE= 5Vdc, TC= -55°)
10
30
40
20
15
(IC= 5mAdc, VCE= 5Vdc)
(IC= 10mAdc, VCE= 5Vdc)
(IC= 100mAdc, VCE= 5Vdc)
(IC= 250mAdc, VCE= 5Vdc)
200
––
HFE
Collector – Emitter Saturation Voltage*
(IC= 20mAdc, IB= 2mAdc)
(IC= 100mAdc, IB=10mAdc)
––
––
0.3
0.5
Vdc
Vdc
VCE(Sat)
Base – Emitter Saturation Voltage *
(IC= 20mAdc, IB= 2mAdc)
(IC=100mAdc, IB=10mAdc)
––
––
0.8
1.0
VBE(Sat)
Current Gain Bandwidth Product
(IC= 100mAdc, VCE= 10Vdc, f= 10MHz)
8.0
––
––
15
MHz
pF
fT
Output Capacitance
(VCB= 20Vdc, IE= 0 Adc, f= 1.0MHz)
Cob
Delay Time
Rise Time
Storage Time
Fall Time
nsec
nsec
msec
nsec
50
150
3
td
tr
ts
tf
(VCC = 125Vdc,
IC = 100 mAdc,
IB1 = 20 mAdc,
IB2 = 40 mAdc)
---
---
800
* Pulse Test: Pulse Width = 300 µS, Duty Cycle = 2%
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0083A
DOC
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