SHF1100TXV [SSDI]

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2;
SHF1100TXV
型号: SHF1100TXV
厂家: SOLID STATES DEVICES, INC    SOLID STATES DEVICES, INC
描述:

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

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SHF1100 - SHF1150 Series  
SHF1150  
Axial Leaded  
SHF1150SMS  
Surface Mount  
Square Tab  
A Novel 1 amp Void Free Glass Ceramic Nanosize Package  
9 nsec Hyper Fast Soft Recovery Nanospeed Rectifier  
SSDI announces our latest technological advancement, the SHF1150. The  
SHF1150 is a void free glass ceramic encapsulated rectifier that provides a  
more rugged, high reliability replacement for a 1N6642 and a smaller, faster  
replacement for the 1N5806.  
Features  
Hyper fast recovery time  
1N6642  
SHF1150  
1.0 A  
1N5806  
@25°C  
IO  
0.3 A  
2.5 A  
(soft recovery / low EMI): 9 nsec max  
@ 8.3mS, 25°C  
@.375”, 25°C  
@25°C  
Low reverse leakage current  
Low forward voltage drop  
Hermetically sealed in a glass ceramic void  
free construction in a DO-35 package  
envelope  
IFSM  
RθJL  
RθJE  
BVR  
IR  
2.5 A  
20 A  
35 A  
150°C/W  
80°C/W  
36°C/W  
40°C/W  
20°C/W  
13°C/W  
@100µA, 25°C  
@20V, 25°C  
100 V min  
160 V min  
50 nA max  
75 nA max  
150 nA max  
0.575 V max  
0.7 V max  
0.8 V max  
0.85 V max  
0.90 V max  
0.975 V max  
50 µA max  
75 µA max  
150 µA max  
0.5 V max  
0.62 V max  
0.81 V max  
0.92 V max  
160 V min  
25 nA max  
--  
High temperature metallurgical category  
@75V, 25°C  
IR  
500 nA max  
--  
I bond  
@150V, 25°C  
@1mA, 25°C  
@10mA, 25°C  
@100mA, 25°C  
@200mA, 25°C  
@500mA, 25°C  
@1.0A, 25°C  
@20V, 150°C  
@75V, 150°C  
@150V, 150°C  
@10mA, 150°C  
@100ma, 150°C  
@10mA, -55°C  
@100mA, -55°C  
IR  
--  
1.0 µA max  
Solid silver leads (copper leads also  
VF  
VF  
VF  
VF  
VF  
VF  
IR  
--  
--  
available)  
0.8 V max  
--  
Excellent liquid-to-liquid thermal shock  
1.00 V max  
--  
performance  
Designed for high efficiency applications  
Radiation tolerant  
Avalanche breakdown  
Replacement for 1N6638, 1N6643 and  
--  
--  
--  
--  
--  
0.875 V max  
50 µA max  
--  
1N5806  
IR  
100 µA max  
--  
Available in axial leaded and surface mount  
square tab versions  
Available in single phase, three phase and  
diode array configurations  
TX, TXV, and S-level screening available  
Samples available on request  
IR  
--  
175 µA @ 125°C  
VF  
VF  
VF  
VF  
0.8 V max  
--  
--  
--  
--  
--  
--  
1.2 V max  
Solid State Devices, Inc. 14701 Firestone Blvd. La Mirada, CA 90638 (562) 404-4474 FAX (562) 404-1773 www.ssdi-power.com  
SHF1100 - SHF1150 Series  
CASE OUTLINES  
ØA  
ØC  
D
B
D
AXIAL  
DIM  
A
MIN  
.056”  
.125”  
.018”  
1.00”  
MAX  
.075”  
.140”  
.022”  
1.50”  
B
C
D
A
B
A
D
C
SMS  
MIN  
DIM  
A
MAX  
.085”  
.200”  
.028”  
--  
.070”  
.168”  
.019”  
.001”  
B
C
D
Solid State Devices, Inc. 14701 Firestone Blvd. La Mirada, CA 90638 (562) 404-4474 FAX (562) 404-1773 www.ssdi-power.com  
SHF1100 thru SHF1150  
SERIES  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
1 AMP  
100 – 150 VOLTS  
9 nsec  
Designer’s Data Sheet  
Part Number/Ordering Information 1/  
____ __ __  
SHF1  
HYPER FAST  
2/  
Screening  
SOFT RECOVERY RECTIFIER  
__ = Not Screened  
TX = TX Level  
TXV = TXV  
FEATURES:  
S = S Level  
Hyper Fast Reverse Recovery Time 9 ns Max  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
Avalanche Breakdown  
Void Free Glass Ceramic Chip Construction  
Hermetically Sealed  
Package Type  
__ = Axial Leaded  
SMS = Surface Mount Square Tab  
Device Type ( VRWM )  
100 = 100 V  
Solid Silver Lead  
Excellent liquid-to-liquid thermal shock performance  
Available in Axial & Square Tab Versions  
For High Efficiency Applications  
150 = 150 V  
TX, TXV, and S-Level Screening Available2/  
Replacement for 1N6638, 1N6642 and 1N5806  
High Temperature Metallurgical Class I Bond  
MAXIMUM RATINGS 3/  
RATING  
SYMBOL  
VALUE  
UNIT  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
SHF1100  
SHF1150  
VRWM  
VR  
100  
150  
Volts  
Average Rectified Forward Current  
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)  
1
IO  
Amp  
Peak Surge Current  
20  
IFSM  
Amps  
°C  
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach  
equilibrium between pulses, TC = 25°C)  
-65 to +175  
Operating & Storage Temperature  
TOP and TSTG  
Thermal Resistance  
SMS- Junction to End Tab  
Axial- Junction to Lead @ .375”  
20  
80  
RθJE  
RθJL  
°C/W  
Axial Leaded  
SMS  
NOTES:  
1/ For Ordering Information, Price, and Availability- Contact Factory.  
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on  
Request.  
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0158A  
DOC  
SHF1100 thru SHF1150  
SERIES  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
3/  
ELECTRICAL CHARACTERISTICS  
CHARACTERISTICS  
SYMBOL  
LIMIT  
UNIT  
@ IF = 1mA  
@ IF = 10mA  
@ IF = 100mA  
@ IF = 200mA  
@ IF = 500mA  
@ IF = 1A  
VF1  
VF2  
VF3  
VF4  
VF5  
VF6  
0.575  
0.700  
0.800  
0.850  
0.900  
0.975  
Maximum Instantaneous Forward Voltage Drop  
(Pulsed, TA = 25°C)  
Vdc  
Maximum Instantaneous Forward Voltage Drop  
(Pulsed, TA = 150°C)  
@ IF = 10mA  
@ IF = 100mA  
VF7  
VF8  
0.5  
0.62  
Vdc  
Vdc  
Vdc  
Maximum Instantaneous Forward Voltage Drop  
(Pulsed, TA = -55°C)  
@ IF = 10mA  
@ IF = 100mA  
VF9  
VF10  
0.81  
0.92  
Minimum Breakdown Voltage  
Ir = 100 μA  
BVR  
100  
@ VR = 20V  
@ VR = 75V  
@ VR = max rated  
IR1  
IR2  
IR3  
50  
75  
150  
Maximum Reverse Leakage Current  
(300 μs Pulse Minimum , TA = 25°C)  
nA  
@ VR = 20V  
@ VR = 75V  
@ VR = max rated  
IR4  
IR5  
IR6  
50  
75  
150  
Maximum Reverse Leakage Current  
(300 μs Pulse Minimum , TA = 150°C)  
µA  
pf  
Maximum Junction Capacitance  
(TA = 25°C , f = 1MHz) VR = 0V  
CJ1  
14  
Maximum Junction Capacitance  
(TA = 25°C , f = 1MHz) VR = 1.5V  
CJ2  
CJ3  
trr  
10  
6
pf  
Maximum Junction Capacitance  
(TA = 25°C , f = 1MHz) VR = 10V  
pf  
Maximum Reverse Recovery Time  
(IF = 50 mA, IR = 100 mA, IRR = 25 mA)  
9
nsec  
nsec  
Maximum Forward Recovery Time  
(IF = 50 mA)  
Tfr  
18  
SMS  
AXIAL  
DIM  
A
B
C
D
MIN  
MAX  
.085”  
.200”  
.028”  
--  
DIM  
A
B
C
D
MIN  
MAX  
.075”  
.140”  
.022”  
1.50”  
.070”  
.168”  
.019”  
.001”  
.056”  
.125”  
.018”  
1.00”  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0158A  
DOC  

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