SHF1106TXV [SSDI]

1AMP 400-900V HYER FAST RECTIFIER; 1AMP 400-900V HYER快速整流


型号：	SHF1106TXV
厂家：	SOLID STATES DEVICES, INC
描述：	1AMP 400-900V HYER FAST RECTIFIER 1AMP 400-900V HYER快速整流整流二极管
文件：	总2页 (文件大小：202K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SHF1104 & SHF1104SMS

thru

SHF1109 & SHF1109SMS

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number/Ordering Information ^1/

1 AMP

400 - 900 V

Hyper Fast Rectifier

SHF11 __ __ __

│

└

│

└

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV

Features:

S = S Level

• Hyper Fast Recovery: 40 nsec maximum

• PIV to 900 Volts, Consult Factory

• Hermetically Sealed

Package Type

__ = Axial Leaded

SMS = Surface Mount Square Tab

• Void Free Construction

Family/Voltage

04 = 400 V

• For High Efficiency Applications

• Replaces UES 1104, UES1106, IN6624

• TX, TXV, S Level screening Available^2/

06 = 600 V

08 = 800 V

09 = 900 V

Maximum Ratings

Symbol

Value

Units

SHF1104

SHF1106

SHF1108

SHF1109

400

600

800

900

V_RRM

V_RSM

V_R

Peak Repetitive Reverse and DC Blocking Voltage

Volts

Average Rectified Forward Current

(Resistive Load, 60 hz Sine Wave, T_A= 25 °C)

1.0

Amps

Peak Surge Current

(8.3 ms Pulse, Half Sine Wave, T_A= 25 °C)

I_FSM

_OP& T_STG

R_θJE

Amps

ºC

Operating & Storage Temperature

-65 to +175

Maximum Thermal Resistance

Junction to Leads, L = 3/8

Junction to Tabs

ºC/W

NOTES:

Axial Lead Diode

SMS

1/ For Ordering Information, Price, and Availability- Contact Factory.

2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RH0111F

DOC

SHF1104 & SHF1104SMS

thru

SHF1109 & SHF1109SMS

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Electrical Characteristic

Symbol

V_F

Max

1.35

1.5

Units

V_DC

µA

Instantaneous Forward Voltage Drop

(I_F= 1A_DC, T_A= 25ºC pulsed)

Instantaneous Forward Voltage Drop

(I_F= 1A_DC, T_A= -55ºC pulsed)

V_F

Reverse Leakage Current

(Rated V_R, T_A= 25ºC pulsed)

I_R

Reverse Leakage Current

(Rated V_R, T_A= 100ºC pulsed)

I_R

nsec

Reverse Recovery Time

(I_F= 500mA, I_R= 1A, I_RR= 250mA, T_A= 25ºC)

t_RR

C_J

Junction Capacitance

(V_R=10V_DC, T_A=25ºC, f=1MHz)

DIM

MIN

0.100”

0.130”

0.027”

1.00”

MAX

Case Outline: (Axial)

0.130”

0.180”

0.033”

ØC

ØA

DIM

MIN

MAX

0.140”

0.230”

0.030”

Case Outline: (SMS)

0.127”

0.180”

0.020”

0.002”

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RH0111F

DOC

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