SHF118TX [SSDI]
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2;
| 型号： | SHF118TX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 二极管 |
| 文件： | 总2页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SHF1104 & SHF1104SMS
thru
SHF1110 & SHF1110SMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number/Ordering Information 1/
1 AMP
400 - 1000 V
Hyper Fast Rectifier
SHF11 __ __ __
│
│
│
│
│
│
│
│
└
│
│
│
│
└
└
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Features:
• Hyper fast recovery: 40 nsec maximum
• PIV to 1000 Volts, consult factory
• Hermetically sealed
Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
Family/Voltage
04 = 400 V
• Void free construction
• For high efficiency applications
• Replaces UES 1104, UES1106, 1N6621-1N6625
• TX, TXV, and S level screening available2/
06 = 600 V
08 = 800 V
09 = 900 V
10 = 1000V
Maximum Ratings
Symbol
Value
Units
SHF1104
SHF1106
SHF1108
SHF1109
SHF1110
400
600
800
900
1000
VRRM
VRSM
VR
Peak Repetitive Reverse and DC Blocking Voltage
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25°C)
IO
1.0
20
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25°C)
IFSM
Amps
ºC
Operating & Storage Temperature
T
OP & TSTG -65 to +175
Junction to Leads, L = 3/8
Junction to Tabs
35
28
Maximum Thermal Resistance
RθJE
ºC/W
NOTES:
Axial Lead Diode
SMS
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0111G
DOC
SHF1104 & SHF1104SMS
thru
SHF1110 & SHF1110SMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic
Symbol
VF
Max
Units
VDC
VDC
µA
Instantaneous Forward Voltage Drop
(IF = 1ADC, TA = 25ºC pulsed)
Instantaneous Forward Voltage Drop
(IF = 1ADC, TA = -55ºC pulsed)
Reverse Leakage Current
(Rated VR, TA = 25ºC pulsed)
Reverse Leakage Current
(Rated VR, TA = 100ºC pulsed)
1.35
1.65
SHF1104-1106
SHF1108-1110
1.50
1.80
SHF1104-1106
SHF1108-1110
VF
IR
10
1
IR
mA
Reverse Recovery Time
(IF = 500mA, IR = 1A, IRR = 250mA, TA = 25ºC)
tRR
CJ
40
22
nsec
pF
Junction Capacitance
(VR = 10VDC, TA = 25ºC, f = 1MHz)
DIM
MIN
MAX
0.130”
0.180”
0.033”
--
Case Outline: (Axial)
A
B
C
D
0.100”
0.130”
0.027”
1.00”
ØC
ØA
D
B
D
DIM
A
MIN
MAX
Case Outline: (SMS)
0.127”
0.180”
0.020”
0.002”
0.140”
0.230”
0.030”
--
B
B
A
C
D
A
D
C
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0111G
DOC
相关型号：
SHF1190SMSTXV
Rectifier Diode, 1 Element, 1A, 900V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN
SSDI
©2020 ICPDF网 联系我们和版权申明