SPD4963-1TX [SSDI]

Rectifier Diode, 1 Element, 1A, 550V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2;
SPD4963-1TX
型号: SPD4963-1TX
厂家: SOLID STATES DEVICES, INC    SOLID STATES DEVICES, INC
描述:

Rectifier Diode, 1 Element, 1A, 550V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

二极管
文件: 总2页 (文件大小:114K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SPD4963-1 thru SPD4963-3  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
1 AMP  
550 – 800 VOLTS  
130 nsec  
FAST RECOVERY  
RECTIFIER  
Designer’s Data Sheet  
Part Number/Ordering Information 1/  
SPD4963 _____ _____  
Screening 2/  
__ = Not Screened  
TX = TX Level  
TXV = TXV  
S = S Level  
FEATURES:  
Fast Recovery: 130 nsec maximum  
PIV up to 800 Volts  
Low Reverse Leakage Current  
Hermetically Sealed  
Single Chip Construction  
High Surge Rating  
Reverse Voltage  
-1 = 550V  
-2 = 670V  
-3 = 800V  
Low Thermal Resistance  
TX, TXV, and Space Level Screening  
Available2/  
MAXIMUM RATINGS  
DC Blocking Voltage  
Symbol  
VR  
Value  
Units  
Volts  
SPD4963-1  
SPD4963-2  
SPD4963-3  
500  
600  
600  
SPD4963-1  
SPD4963-2  
SPD4963-3  
550  
670  
800  
Peak Repetitive Reverse Voltage  
VBR  
Volts  
Average Rectified Forward Current  
IO  
1
Amps  
(Resistive Load, 60 Hz, Sine Wave, TA=25oC)  
Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave, Superimposed on IO; Allow  
IFSM  
TOP & Tstg  
RθJL  
20  
-65 to +175  
40  
Amps  
oC  
junction to reach equilibrium between pulses; TA=25oC)  
Operating and Storage Temperature  
Maximum Thermal Resistance  
Junction to Lead, L = 0.375”  
oC/W  
NOTES:  
Axial  
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.  
2/ Screening Based on MIL-PRF-19500. Screening Flow Available on Request.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0051C  
DOC  
SPD4963-1 thru SPD4963-3  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
ELECTRICAL CHARACTERISTICS  
Symbol  
VF1  
Min  
Max  
Unit  
SPD4963-1  
SPD4963-2  
SPD4963-3  
1.30  
1.30  
1.35  
––  
––  
––  
Instantaneous Forward Voltage Drop  
(IF = 1 ADC, TA = 25°C, 300 - 500μsec Pulse)  
Volts  
Instantaneous Forward Voltage Drop  
(IF = 60 ADC, TA = 25°C, 50 - 500μsec Pulse)  
––  
Volts  
Volts  
ALL  
VF2  
10.0  
SPD4963-1  
SPD4963-2  
SPD4963-3  
550  
670  
800  
––  
––  
––  
Reverse Breakdown Voltage  
(IR = 100 μADC, TA = 25°C, 300μsec min Pulse)  
VBR  
TA = 25oC  
IR1  
IR2  
2
1
Reverse Leakage Current  
(Rated VR, 300μsec min Pulse)  
––  
––  
μA  
mA  
TA = 150oC  
Storage Charge  
––  
––  
QS  
trr  
30  
nC  
ns  
(IF = 100 mA, TA = 25oC)  
Reverse Recovery Time  
130  
(IF = 500 mA, IR = 1 A, IRR = 250 mA, TA = 25oC)  
DIM  
MIN  
MAX  
Case Outline:  
A
B
C
D
--  
--  
0.120”  
0.250”  
0.033”  
––  
0.027”  
1.00”  
NOTES:  
Consult manufacturing for operating curves.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0051C  
DOC  

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