SRM10TX [SSDI]
Rectifier Diode, 1 Phase, 1 Element, 60A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2;
| 型号： | SRM10TX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 60A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 二极管 |
| 文件： | 总2页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SRM6 thru SRM12
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
60 AMPS
STANDARD RECOVERY RECTIFIER
600 - 1200 VOLTS
Designer’s Data Sheet
Part Number / Ordering Information1/
SRM
___ ___ ___
Screening 2/
__ = Not Screened
5 sec
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
TX = TX Level
TXV = TXV Level
S = S Level
FEATURES:
Replacement for DO-4 or DO-5
Standard recovery: 5 sec maximum
PIV to 1200 volts
Low reverse leakage current
Hermetically sealed void-free construction
Monolithic single chip construction
High surge rating
Low thermal resistance
Equivalent to 5961-94022
TX, TXV, and Space Level Screening Available
Package Type
__ = Axial
SMS = Surface Mount Square Tab
BTR = Button
Voltage
6 = 600V
8 = 800V
10 = 1000V
12 = 1200V
MAXIMUM RATINGS
Symbol
Value
Units
Volts
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
SRM6
SRM8
SRM10
SRM12
600
800
1000
1200
VRRM
VRWM
VR
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave; Axial, TL = 100oC; SMS, TE = 100oC;
Button, TC = 100oC)
IO
Amps
60
Peak Surge Current
IFSM
800
Amps
oC
(8.3 ms Pulse, Half Sine Wave, Superimposed on IO, Allow Junction to Reach
Equilibrium Between Pulses, TL or TC = 55oC)
Operating and Storage Temperature
Maximum Thermal Resistance
Junction to Lead, L = 3/8”
Junction to End Tab
Junction to End
TOP & Tstg -65 to +175
RJL
RJE
RJC
3
2.5
1
Axial (__)
SMS
Button (BTR)
oC/W
1/ For ordering information, price, operating curves, and availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all maximum ratings/electrical characteristics @25°C.
Notes:
Axial (__)
Surface Mount Square Tab (SMS)
Button (BTR)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0046F
DOC
SRM6 thru SRM12
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
Symbol
Min
Max
Unit
VDC
VDC
A
TA = 25oC
TA = -55oC
TA = 25oC
VF1
VF2
1.05
1.15
Instantaneous Forward Voltage Drop
(IF = 20 ADC, 300sec min pulse)
––
––
––
VF3
1.20
(IF = 60 ADC, 300sec min pulse)
TA = 25oC
IR1
IR2
2.0
500
Reverse Leakage Current
(Rated VR, 300 sec min pulse)
––
––
TA = 100oC
Junction Capacitance
––
––
CJ
trr
250
5
pF
(VR =10 VDC, TA = 25oC, f = 1 MHz)
Reverse Recovery Time
sec
(IF = 500 mA, IR = 1 A, IRR = 250 mA, TA = 25oC)
Case Outline: AXIAL
Case Outline: SMS
Case Outline: SRM Button
TOLERANCES: (unless otherwise specified)
.XX±.03, .XXX±.010
TYPICAL FORWARD VOLTAGE (Vf)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0046F
DOC
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