SSG55N60N [SSDI]

55 AMP /600 Volts 1.65 V saturation ultrafast IGBT; 55 AMP / 600伏特1.65 V饱和超快IGBT
SSG55N60N
元器件型号: SSG55N60N
生产厂家: SOLID STATES DEVICES, INC    SOLID STATES DEVICES, INC
描述和应用:

55 AMP /600 Volts 1.65 V saturation ultrafast IGBT
55 AMP / 600伏特1.65 V饱和超快IGBT

双极性晶体管
PDF文件: 总2页 (文件大小:64K)
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型号参数:SSG55N60N参数

SSG55N60NS

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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0 SSDI

SSG55N60NTX

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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0 SSDI

SSG55N60NTX

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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0 SSDI

SSG55N60NTXV

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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0 SSDI

SSG55N60NTXV

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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0 SSDI

SSG55N60P

1.65 V saturation ultrafast IGBT

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7 SSDI

SSG55N60P

55 AMP /600 Volts 1.65 V saturation ultrafast IGBT

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4 SSDI

SSG55N60P

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-259, HERMETIC SEALED PACKAGE-3

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0 SSDI

SSG55N60PS

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-259, HERMETIC SEALED PACKAGE-3

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0 SSDI

SSG55N60PTX

暂无描述

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0 SSDI

SSG55N60PTXV

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-259, HERMETIC SEALED PACKAGE-3

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0 SSDI

SSG55N60Z

55 AMP /600 Volts 1.65 V saturation ultrafast IGBT

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7 SSDI

SSG55N60Z

1.65 V saturation ultrafast IGBT

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13 SSDI

SSG55N60ZS

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN

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0 SSDI

SSG55N60ZTX

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN

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0 SSDI