SSR2010CAMZ [SSDI]

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-254Z, 3 PIN;


型号：	SSR2010CAMZ
厂家：	SOLID STATES DEVICES, INC
描述：	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-254Z, 3 PIN
文件：	总2页 (文件大小：125K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSR2010

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

20 AMP

100 VOLTS

SCHOTTKY RECTIFIER

Designer’s Data Sheet

FEATURES:

• PIV: 100 Volts

• Low Forward Voltage Drop

• Low Reverse Leakage

• Hermetically Sealed Power Surface Mount

Package

• Guard Ring for Overvoltage Protection

• Eutectic Die Attach

• 175^°C Operating Junction Temperature

• TX, TXV, or Space Level Screening Available

SMD1

MAXIMUM RATINGS

RATING

SYMBOL

VALUE

UNIT

Peak Repetitive Reverse Voltage and DC

Blocking Voltage

V_RRM

V_RWM

V_R

100

Volts

SSR2010

Average Rectified Output Current ^1/

(Resistive Load, 60Hz, Sine Wave, TA=25^°C)

Peak Surge Current ^1/

(8.3 ms Pulse, Half Sine Wave superimposed on

I_O, allow junction to reach equilibrium between

pulses, TA=25^°C)

I_O

Amps

I_FSM

300

Operating and Storage Temperature

T_OP& T_STG

-65 to +175

0.8

^°C

Maximum Thermal Resistance ^1/

Junction to Case

R_θJC

^°C/W

Notes: 1/ Both Anode Terminals (1, 3) Tied Together.

NOTE: All specifications are subject to change without notification.

DATA SHEET #: RS0081D

DOC

SCD's for these devices should be reviewed by SSDI prior to release.

SSR2010

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

ELECTRICAL CHARACTERISTICS (Per Leg)

CHARACTERISTICS

SYMBOL

MAXIMUM

UNIT

Instantaneous Forward Voltage Drop

(I_F= 10 Adc, T_A= 25^°C, Pulse)

(I_F= 15 Adc, T_A= 25^°C, Pulse)

(I_F= 20 Adc, T_A= 25^°C, Pulse)

0.68

0.72

0.75

V_F1

Vdc

Instantaneous Forward Voltage Drop

V_F2

I_R1

I_R2

C_J

0.75

200

Vdc

µA

(I_F= 10 Adc, T_A= -55^°C, Pulse)

Reverse Leakage Current

(Rated V_R, T_A= 25^°C, Pulse)

Reverse Leakage Current

(Rated V_R, T_A= 100^°C, Pulse)

Junction Capacitance

(V_R= 10 Vdc, T_A= 25^°C, f = 1 MHz)

800

Case Outline- SMD1

PIN OUT:

PIN 1- ANODE

PIN 2- CATHODE

PIN 3- ANODE

NOTE: All specifications are subject to change without notification.

DATA SHEET #: RS0081D

DOC

SCD's for these devices should be reviewed by SSDI prior to release.

相关型号：

SSR2010CAZDB

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, HERMETICALLY SEALED, TO-254Z, 3 PIN