SSR24C30CTJS [SSDI]

Rectifier Diode, Schottky, 1 Phase, 2 Element, 12A, 300V V(RRM), Silicon Carbide, TO-257,;


型号：	SSR24C30CTJS
厂家：	SOLID STATES DEVICES, INC
描述：	Rectifier Diode, Schottky, 1 Phase, 2 Element, 12A, 300V V(RRM), Silicon Carbide, TO-257,
文件：	总3页 (文件大小：125K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSR24C60CTJ &

SSR24C60CAJ Series

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

24 Amp

Schottky Silicon Carbide

Centertap Rectifier

600 Volts

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

SSR24C __ CT J __

│ │ │ └ Screening^2/

__ = Not Screened

│ │ │

TV = TX Level

TXV = TXV Level

S = S Level

Features:

 World's Smallest Hermetic SiC Centertap Rectifier

 High Voltage, 600V

│ │ └Package J = TO-257

│ │

 Very High Operating Temperature, 250°C

 No Recovery Time (tfr or trr)

 High Current Operation, 24A

│ └ Configuration CT = Common Cathode

CA = Common Anode

│

 Hermetically Sealed, Isolated Packaging



TX, TXV, and S Level screening available

└ Voltage 30 = 300 V 40 = 400 V

50 = 500 V 60 = 600 V

Maximum Ratings^3/

Symbol

Value

Units

Volts

Amps

SSR24C30

SSR24C40

SSR24C50

SSR24C60

300

400

500

600

Peak Repetitive and Peak Surge Reverse

Voltage

V_RRM

V_RSM

Per Leg

Total

Average Rectified Forward Current

(Resistive Load, 60 Hz, Sine Wave)

I_O

Non Repetitive Peak Surge Current

I_FSM

P_D

120

Amps

Watts

°C

(8.3 ms Pulse, Non-repetitive Half Sine Wave, per leg)

Power Dissipation

(T_C= 25°C)

Operating & Storage Temperature ^4/

Top & Tstg

-55 to +250

Maximum Thermal Resistance

Junction to Case

R_θJC

°C/W

NOTES:

TO-257 (J)

1/ For ordering information, price, operating curves, and availability – contact

factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ All Electrical Characteristics @ 25°C Unless Otherwise Specified.

4/ If high temp operation is desired (>175°C) consult factory for soldering

consideration.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RS0028E

DOC

SSR24C60CTJ &

Solid State Devices, Inc.

SSR24C60CAJ Series

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Electrical Characteristic (Per Leg)

Symbol

V_F1

Min

––

Typ

Max

Units

Volts

µA

Instantaneous Forward Voltage Drop

(T_J= 25°C, 300 µsec pulse)

I_F= 6A

I_F= 12A

1.20

1.50

1.40

1.75

Instantaneous Forward Voltage Drop

(T_J= 150°C, 300 µsec pulse)

I_F= 6A

I_F= 12A

1.35

1.85

1.60

2.25

V_F2

V_F3

I_R1

Instantaneous Forward Voltage Drop

(T_J= -55°C, 300 µsec pulse)

I_F= 6A

I_F= 12A

1.27

1.50

1.45

1.75

Reverse Leakage Current

(V_R= Rated V_R, T_J= 25°C, 300 µsec pulse)

200

1000

––

Reverse Leakage Current

(V_R= Rated V_R, T_J= 150°C, 300 µsec pulse)

I _R2

µA

Junction Capacitance

(V_R= 10 Vdc, T_C= 25°C, f=1MHz)

Total Capacitive Charge

(V_R= 10 Vdc, I_F= 12A, di/dt > 200A/µs, T_J= 25°C)

C_J

280

Q_C

––

CASE OUTLINE: TO-257

PIN ASSIGNMENT

Available Part Numbers:

Configuration

Pin 1

Anode

Pin 2

Cathode

Anode

Pin 3

Anode

SSR24C30CTJ

SSR24C60CTJ

SSR24C50CAJ

SSR24C40CTJ

SSR24C30CAJ

SSR24C60CAJ

SSR24C50CTJ

SSR24C40CAJ

Cathode

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RS0028E

DOC

SSR24C60CTJ &

Solid State Devices, Inc.

SSR24C60CAJ Series

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RS0028E

DOC

相关型号：