TG0004B_15 [SSDI]
Fast Power IGBT;
| 型号： | TG0004B_15 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Fast Power IGBT 双极性晶体管 |
| 文件： | 总2页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG60N60 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number/Ordering Information1/
85 AMP / 600 Volts
Fast Power IGBT
SSG60N60 ___ ___ ___
Screening2/
__ = Not Screened
TX = TX Level
TXV = TXV
│
│
│
│
│
│
│
│
└
│
│
│
│
└
└
S = S Level
Lead Bend3/
__ = Straight
Features:
600V IGBT technology
UB = Up Bend
DB = Down Bend
Positive temperature coefficient for ease of paralleling
High current switching for motor drives and inverters
Low saturation voltage at high currents
Low switching losses
Package
N = TO-258, Isolated
P = TO-259, Isolated
S2 = SMD2
High short circuit capability
MOS input, voltage controlled
Hermetic sealed construction
TX, TXV, S-level screening available
Maximum Ratings
Symbol
VCEO
Value
Units
V
Collector – Emitter Voltage
600
Continuous Collector Current
Average Diode Current
@ TC = 25ºC
@ TC = 100ºC
85
60
IC
A
Peak Collector Current
IC(pk)
VGE
200
±20
A
V
Gate – Emitter Voltage
Operating & Storage Temperature
Total Device Dissipation
TJ & TSTG
PD
-65 to +200
350
ºC
W
@ TC = 25ºC
Thermal Resistance
Junction to Case
N, P
S2
1.0
0.75
R0JC
ºC/W
TO-258 (N)
TO-259 (P)
SMD2 (S2)
NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Up and down bend configurations available for TO-258 (N) and TO-259 (P) packages only.
4/ Unless otherwise specified, all electrical characteristics @25oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TG0004B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SSG60N60 Series
Electrical Characteristics4/
Symbol Min
Typ Max Units
Collector – Emitter Breakdown Voltage
Collector – Emitter Saturation Voltage
Gate – Emitter Threshold voltage
Zero Gate Voltage Collector Current
V
GE = 0V, IC = 250μA V(BR)CES 600
––
2.0
––
––
2.5
6.5
V
V
V
V
GE = 15V, IC = 60A VCE(SAT)
––
3
VGE = VCE, IC = 250mA VGE(th)
TJ = 25oC
––
––
0.5
0.35
250
5.0
μA
mA
ICES
VCE = 600V, VGE = 0V
TJ = 150oC
Gate – Emitter Leakage Current
Input Capacitance
V
GE = 20V, VCE = 0V
CE = 25V, VGE = 0V, f = 1 MHz
VCE = 25V, VGE = 0V, f = 1 MHz
IGES
CISS
COSS
CRSS
––
––
––
––
10
4000
300
55
100
––
nA
pF
pF
pF
V
Output Capacitance
––
Reverse Transfer Capacitance
V
CE = 25V, VGE = 0V, f = 1 MHz
––
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
td(on)
tr
td(off)
tf
––
––
––
––
85
––
––
––
––
VCC = 400V, IC = 50ADC,
140
300
150
VGE = 15V, tP = 10µsec,
nsec
Duty Cycle ≤ 1%
TO-258 (N)
TO-259 (P)
SMD2 (S2)
Available Part Numbers:
SSG60N60N, SSG60N60NUB, SSG60N60NDB,
SSG60N60P, SSG60N60PUB, SSG60N60PDB,
SSG60N60S2
PIN ASSIGNMENT (Standard)
Package
TO-258 (N)
TO-259 (P)
SMD2
Collector
Pin 1
Pin 1
Emitter
Pin 2
Pin 2
Gate
Pin 3
Pin 3
Pin 3
Pin 1
Pin 2
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TG0004B
DOC
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