TR0009_15 [SSDI]

NPN TRANSISTOR;
TR0009_15
型号: TR0009_15
厂家: SOLID STATES DEVICES, INC    SOLID STATES DEVICES, INC
描述:

NPN TRANSISTOR

文件: 总2页 (文件大小:109K)
中文:  中文翻译
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SFT6800/59  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
2 AMP  
DESIGNER’S DATA SHEET  
500 VOLTS  
NPN TRANSISTOR  
FEATURES:  
BVCEO TO 400 V  
Fast Switching  
TO-59  
Very Low Leakage  
Low Saturation Voltage  
200oC Operating, Gold Eutectic Die Attach  
Designed for Complementary Use with SFT1192  
MAXIMUM RATINGS  
Symbol  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector – Emitter Voltage  
Collector – Base Voltage  
Emitter – Base Voltage  
Collector Current  
400  
500  
10  
Volts  
Volts  
Volts  
Amps  
Amps  
2
IB  
Base Current  
0.5  
Total Device Dissipation @ TC = 100oC  
20  
W
PD  
Derate above 25oC  
133  
mW/ºC  
T
OP & TSTG  
RθJC  
Operating and Storage Temperature Range  
Thermal Resistance, Junction to Case  
-65 to +200  
7.5  
ºC  
ºC/W  
NOTE: All specifications are subject to change without notification.  
DATA SHEET #: TR0009E  
DOC  
SCD's for these devices should be reviewed by SSDI prior to release.  
SFT6800/59  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
ELECTRICAL CHARACTERISTICS  
Symbol  
BVCEO  
BVCBO  
BVEBO  
ICBO  
Min Max Units  
Collector – Emitter Breakdown Voltage  
––  
––  
400  
500  
10  
––  
V
V
(IC = 20 mA)  
Collector – Base Breakdown Voltage  
––  
(IC = 100 µADC)  
Emitter – Base Breakdown Voltage  
(IE = 20 µADC)  
––  
V
Collector Cutoff Current  
200  
200  
200  
nA  
nA  
nA  
(VCB = 400 VDC)  
Collector Cutoff Current  
––  
ICEV  
(VCE = 400 VDC, VEB = 1.5 VDC)  
Emitter Cutoff Current  
––  
IEBO  
(VEB = 6 VDC)  
(IC = 50 mADC)  
(IC = 500 mADC)  
(IC = 1.0 ADC)  
50  
40  
15  
––  
––  
––  
DC Current Gain*  
HFE  
(VCE = 5 VDC)  
Collector – Emitter Saturation Voltage*  
––  
––  
25  
––  
––  
––  
VCE (SAT)  
VBE (SAT)  
fT  
500  
1.0  
mVDC  
VDC  
MHz  
pf  
(IC = 500 mADC, IB = 50 mADC)  
Base – Emitter Saturation Voltage*  
(IC = 500 mADC, IB = 50 mADC)  
Current Gain Bandwidth Product  
––  
(IC = 50 mADC, VCE = 10 VDC , f = 20 MHz)  
Output Capacitance  
Cobo  
40  
(VCB = 30 VDC, IE = 0 ADC , f = 2.0 MHz)  
Turn On Time  
t(on)  
700  
2000  
ns  
(VCC = 330 VDC, IC = 500 mADC  
IB1 = IB2 = 100 mADC  
,
RB1 = RB2 = 330 Ω  
Turn Off Time  
t(off)  
ns  
* Pulse Test: Pulse Width = 300 µsec, Duty Cycle = 2%  
NOTE: All specifications are subject to change without notification.  
DATA SHEET #: TR0009E  
DOC  
SCD's for these devices should be reviewed by SSDI prior to release.  

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