1N5406G [SSE]

GLASS PASSIVATED JUNCTION RECTIFIER; 玻璃钝化结整流器
1N5406G
型号: 1N5406G
厂家: SHANGHAI SUNRISE ELECTRONICS    SHANGHAI SUNRISE ELECTRONICS
描述:

GLASS PASSIVATED JUNCTION RECTIFIER
玻璃钝化结整流器

文件: 总1页 (文件大小:19K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SHANGHAI SUNRISE ELECTRONICS CO., LTD.  
1N5400G THRU 1N5408G  
GLASS PASSIVATED  
JUNCTION RECTIFIER  
TECHNICAL  
SPECIFICATION  
VOLTAGE: 50 TO 1000V CURRENT: 3.0A  
FEATURES  
• Molded case feature for auto insertion  
DO - 201AD  
• Glass passivated chip  
• High current capability  
• Low leakage current  
• High surge capability  
• High temperature soldering guaranteed:  
250oC/10sec/0.375"(9.5mm) lead length  
at 5 lbs tension  
MECHANICAL DATA  
• Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
• Case: Molded with UL-94 Class V-O  
recognized flame retardant epoxy  
• Polarity: Color band denotes cathode  
• Mounting position: Any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,  
derate current by 20%)  
1N54 1N54 1N54 1N54 1N54 1N54 1N54  
00G 01G 02G 04G 06G 07G 08G  
RATINGS  
SYMBOL  
UNITS  
VRRM  
VRMS  
VDC  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800 1000  
560 700  
800 1000  
V
V
V
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified Current  
(9.5mm lead length, at TL=105oC)  
IF(AV)  
IFSM  
VF  
3.0  
200  
1.0  
A
A
V
Peak Forward Surge Current (8.3ms single  
half sine-wave superimposed on rated load)  
Maximum Instantaneous Forward Voltage  
(at rated forward current)  
Ta=25oC  
Ta=100oC  
5.0  
300  
40  
Maximum DC Reverse Current  
µA  
µA  
IR  
(at rated DC blocking voltage)  
CJ  
Typical Junction Capacitance  
Typical Thermal Resistance  
(Note 1)  
(Note 2)  
pF  
oC/W  
oC  
30  
Rθ(ja)  
-65 to +150  
TSTG,TJ  
Storage and Operation Junction Temperature  
Note:  
1.Measured at 1.0 MHz and applied voltage of 4.0Vdc  
2.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C. board mounted  
http://www.sse-diode.com  

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