ES2G [SSE]

SURFACE MOUNT SUPER FAST SWITCHING RECTIFIER; 表面装载超快速开关整流器


型号：	ES2G
厂家：	SHANGHAI SUNRISE ELECTRONICS
描述：	SURFACE MOUNT SUPER FAST SWITCHING RECTIFIER 表面装载超快速开关整流器二极管开关光电二极管功效 IOT
文件：	总1页 (文件大小：19K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

ES2A THRU ES2G

TECHNICAL

SPECIFICATION

SURFACE MOUNT SUPER

FAST SWITCHING RECTIFIER

VOLTAGE: 50 TO 400V CURRENT: 2.0A

FEATURES

• Ideal for surface mount pick and

SMB/DO-214AA

place application

• Low profile package

• Built-in strain relief

• High surge capability

• Glass passivated chip

• Super fast recovery for high efficiency

• High temperature soldering guaranteed:

260^oC/10sec/at terminal

MECHANICAL DATA

• Terminal: Plated leads solderable per

MAX. .155(3.94) .180(4.57) .083(2.11) .012(0.305)

MIN. .130(3.30) .160(4.06) .077(1.96) .006(0.152)

MIL-STD 202E, method 208C

• Case: Molded with UL-94 Class V-O

recognized flame retardant epoxy

• Polarity: Color band denotes cathode

MAX. .220(5.59) .096(2.44) .008(0.203) .060(1.52)

MIN. .205(5.21) .084(2.13) .004(0.102) .030(0.76)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25^oC, unless otherwise stated, for capacitive load,

derate current by 20%)

RATINGS

SYMBOL ES2A ES2B ES2C ES2D ES2E ES2G UNITS

V_RRM

V_RMS

V_DC

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

100

150

105

150

200

140

200

300

210

300

400

280

400

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

(T_L=110^oC)

100

I_F(AV)

2.0

Peak Forward Surge Current (8.3ms single

half sine-wave superimposed on rated load)

Maximum Instantaneous Forward Voltage

(at rated forward current)

I_FSM

V_F

I_R

0.95

1.25

T_a=25^oC

5.0

350

Maximum DC Reverse Current

(at rated DC blocking voltage)

µA

T_a=100^oC

Maximum Reverse Recovery Time (Note 1)

trr

C_J

Typical Junction Capacitance

Typical Thermal Resistance

(Note 2)

(Note 3)

^oC/W

^oC

R_θ(ja)

-50 to +150

T_STG,T_J

Storage and Operation Junction Temperature

Note:

1.Reverse recovery condition I_F=0.5A, I_R=1.0A,Irr=0.25A.

2.Measured at 1.0 MHz and applied voltage of 4.0V_dc

3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area

http://www.sse-diode.com

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